Abstract: A semiconductor structure is provided. The semiconductor structure includes a substrate, a channel layer, a barrier layer, a compound semiconductor layer, a gate electrode, and a stack of dielectric layers. The channel layer is disposed on the substrate. The barrier layer is disposed on the channel layer. The compound semiconductor layer is disposed on the barrier layer. The gate electrode is disposed on the compound semiconductor layer. The stack of dielectric layers is disposed on the gate electrode. The stack of dielectric layers includes layers having different etching rates.

Abstract: An illumination system provides an illumination beam and includes a red light source, a green light source, a blue light source, a first supplementary light source, a first X-shaped light-splitting assembly, a first light-splitting element, and a light-uniforming element. The red light source provides a red beam. The green light source provides a green beam. The blue light source provides a blue beam. The first supplementary light source provides a first supplementary beam. The first X-shaped light-splitting assembly guides the first supplementary beam and the blue beam to the first light-splitting element. The first light-splitting element guides the red beam, the green beam, the blue beam, and the first supplementary beam to the light-uniforming element. The first supplementary beam is a red supplementary beam or a blue supplementary beam, and the illumination system includes at least five light-emitting elements. A projection apparatus including the above illumination system is also provided.

Abstract: A package structure including a redistribution circuit structure, a wiring substrate, first conductive terminals, an insulating encapsulation, and a semiconductor device is provided. The redistribution circuit structure includes stacked dielectric layers, redistribution wirings and first conductive pads. The first conductive pads are disposed on a surface of an outermost dielectric layer among the stacked dielectric layers, the first conductive pads are electrically connected to outermost redistribution pads among the redistribution wirings by via openings of the outermost dielectric layer, and a first lateral dimension of the via openings is greater than a half of a second lateral dimension of the outermost redistribution pads. The wiring substrate includes second conductive pads. The first conductive terminals are disposed between the first conductive pads and the second conductive pads. The insulating encapsulation is disposed on the surface of the redistribution circuit structure.

Abstract: An illumination system for providing an illumination beam includes red, blue, and green light source modules, a first light combining element, and a light uniforming element. The red light source module includes a first red light emitting element emitting first red light and a second red light emitting element emitting second red light. A peak wavelength of the second red light is greater than a peak wavelength of the first red light. The blue light source module includes a first blue light emitting element emitting first blue light and a second blue light emitting element emitting second blue light. A peak wavelength of the second blue light is less than a peak wavelength of the first blue light. The green light source module generates green light. The first light combining element guides these lights into the light uniforming element, so that the illumination system outputs the illumination beam.

Abstract: A projection device, including an illumination system, a control element, a driving element, a light valve, and a projection lens, is provided. The illumination system includes multiple light sources for providing multiple light beams to be combined into an illumination light beam. The driving element respectively drives the light sources in a first mode or a second mode, so that the light beams have respective luminous brightness, and the driving element is switched from the first mode to the second mode according to a first signal. The control element provides the first signal to the driving element according to an optical state or a time state of the projection device. The light valve is adapted to convert the illumination light beam into an image light beam. The projection lens is adapted to project the image light beam out of the projection device.

Abstract: A deep trench structure may be formed between electrodes of a capacitive device. The deep trench structure may be formed to a depth, a width, and/or an aspect ratio that increases the volume of the deep trench structure relative to a trench structure formed using a metal etch-stop layer. Thus, the deep trench structure is capable of being filled with a greater amount of dielectric material, which increases the capacitance value of the capacitive device. Moreover, the parasitic capacitance of the capacitive device may be decreased by omitting the metal etch-stop layer. Accordingly, the deep trench structure (and the omission of the metal etch-stop layer) may increase the sensitivity of the capacitive device, may increase the humidity-sensing performance of the capacitive device, and/or may increase the performance of devices and/or integrated circuits in which the capacitive device is included.

Abstract: A deep trench structure may be formed between electrodes of a capacitive device. The deep trench structure may be formed to a depth, a width, and/or an aspect ratio that increases the volume of the deep trench structure relative to a trench structure formed using a metal etch-stop layer. Thus, the deep trench structure is capable of being filled with a greater amount of dielectric material, which increases the capacitance value of the capacitive device. Moreover, the parasitic capacitance of the capacitive device may be decreased by omitting the metal etch-stop layer. Accordingly, the deep trench structure (and the omission of the metal etch-stop layer) may increase the sensitivity of the capacitive device, may increase the humidity-sensing performance of the capacitive device, and/or may increase the performance of devices and/or integrated circuits in which the capacitive device is included.

Abstract: A deep trench structure may be formed between electrodes of a capacitive device. The deep trench structure may be formed to a depth, a width, and/or an aspect ratio that increases the volume of the deep trench structure relative to a trench structure formed using a metal etch-stop layer. Thus, the deep trench structure is capable of being filled with a greater amount of dielectric material, which increases the capacitance value of the capacitive device. Moreover, the parasitic capacitance of the capacitive device may be decreased by omitting the metal etch-stop layer. Accordingly, the deep trench structure (and the omission of the metal etch-stop layer) may increase the sensitivity of the capacitive device, may increase the humidity-sensing performance of the capacitive device, and/or may increase the performance of devices and/or integrated circuits in which the capacitive device is included.

Abstract: A semiconductor arrangement includes a first well formed to a first depth and a first width in a substrate and a second well formed to a second depth and a second width in the substrate. The first well is formed in the second well, the first depth is greater than the second depth, and the second width is greater than the first width. A source region is formed in the second well and a drain region is formed in the substrate.

Abstract: The present disclosure provides a method for manufacturing a semiconductor structure. The method includes several operations as follows. A semiconductor substrate is received. A trench along a depth in the semiconductor substrate is formed. The semiconductor substrate is exposed in a hydrogen containing atmosphere. Dopants are inserted into a portion of the semiconductor substrate. A dielectric is filled in the trench. The dopants are driven into a predetermined distance in the semiconductor substrate.

Abstract: The present disclosure provides a method for manufacturing a semiconductor structure. The method includes several operations as follows. A semiconductor substrate is received. A trench along a depth in the semiconductor substrate is formed. The semiconductor substrate is exposed in a hydrogen containing atmosphere. Dopants are inserted into a portion of the semiconductor substrate. A dielectric is filled in the trench. The dopants are driven into a predetermined distance in the semiconductor substrate.

Abstract: A collapsible barbecue grill assembly has a top rack (20), a leg assembly attached under the top rack (20) and a foldable charcoal container (30) mounted on the top rack (20). The leg assembly is combined by means of wedging without using any tools. The top rack (20) is composed of two side frames (22a), (22b) and two panels (24a), (24b) pivotally connecting between the two side frames (22a), (22b). One joint of the panel and the side frames (22) is detachable to allow the top rack to be pivotally folded and the charcoal container (30) is foldable into a flat configuration. Therefore, the volume of the folded barbecue grill assembly is particularly low. Moreover, the barbecue grill assembly uses no trivial accessory and can be conveniently assembled without any tool.

Abstract: A collapsible barbecue grill assembly has a top rack (20), a leg assembly attached under the top rack (20) and a foldable charcoal container (30) mounted on the top rack (20). The leg assembly is combined by means of wedging without using any tools. The top rack (20) is composed of two side frames (22a), (22b) and two panels (24a), (24b) pivotally connecting between the two side frames (22a), (22b). One joint of the panel and the side frames (22) is detachable to allow the top rack to be pivotally folded and the charcoal container (30) is foldable into a flat configuration. Therefore, the volume of the folded barbecue grill assembly is particularly low. Moreover, the barbecue grill assembly uses no trivial accessory and can be conveniently assembled without any tool.

Abstract: An adjustable hiking stick includes a telescopic tube having multiple interconnected sections. Adjacent sections connect at a joint, and the joint includes an end sleeve, a slide limit device, an inside section and an outside section. The outside section has an outside end and an interior surface. The inside section is slidably extended into the outside section and has an inside end and an exterior surface. The end sleeve is attached to the outside end of the outside section and has an annular lip. The slide limit device can be ribs, rings or the like that protruded from the exterior surface of the inside section and is formed adjacent to the inside end of the inside section. The slide limit device will abut the annular lip and keep the inside section from being pulled completely out of the outside section when the inside section is adjusted.

Abstract: A hand tool with a detachable working piece includes a handle having a stud extending out from one end of the handle and a working piece detachably attached to the end of the handle. A locking pin extends through the working piece and the stub of the handle to prevent the working piece from inadvertently detaching from the handle. The locking pin has two steel balls movably mounted in the locking pin and partially extending out from the locking pin to prevent the locking pin from inadvertently detaching from the handle and the working piece. The user can change the working pieces rapidly and easily to deal with changing requirements. Furthermore, the hand tool will save money and storage space because only one handle is needed.