Abstract: An adaptive power supply system for an unmanned vehicle and an operation method thereof are provided. The adaptive power supply system includes an adaptive power supply, a battery, a sensing circuit, and a power dispatch controller. The output terminal of the adaptive power supply powers the load circuit of the unmanned vehicle. The battery is coupled to the output terminal of the adaptive power supply. The sensing circuit senses the output of the output terminal of the adaptive power supply and the output of the battery. The power dispatch controller controls the output of the output terminal of the adaptive power supply according to the sensing result of the sensing circuit. The power dispatch controller determines whether one or both of the adaptive power supply and the battery power the load circuit by adjusting the output of the adaptive power supply.

Abstract: An optical system is provided, including a light path adjustment module, an optical element driving module and a light flux adjustment module, The light path adjustment module is used for receiving light traveling in a first direction and adjusting the path of the light. The optical element driving module is used for receiving light. The light flux adjustment module is used for adjusting the light flux of the light, wherein the light flux adjustment module is disposed between the light path adjustment module and the optical element driving module.

Abstract: An optical element driving mechanism is provided, including a fixed portion, a movable portion, and a driving assembly. The movable portion is movably connected to the fixed portion and includes a holder to hold an optical element having a main axis. The driving assembly is disposed on the movable portion or the fixed portion for driving the movable portion to move relative to the fixed portion.

Abstract: A driving mechanism for an optical element is provided, including a fixed portion, a movable portion, a first driving assembly, and a positioning assembly. The movable portion is movably disposed on the fixed portion, and includes an optical element. The first driving assembly is at least partially disposed on the fixed portion, and drives the optical element to move in a first direction. The positioning assembly is disposed on the fixed portion or the movable portion, wherein the positioning assembly limits the movable part to a first terminal position or a second terminal position relative to the fixed portion.

Abstract: A light flux adjustment module is provided for adjusting light flux of light having an optical axis, including a fixed portion, a connecting element, a first blade, and a drive assembly. The fixed portion includes a window, and the light passes through the window. The connecting element is movably connected to the fixed portion. The first blade is movably connected to the connecting element and the fixed portion, and the first blade is adjacent to the window. The drive assembly is used for driving the connecting element to move relative to the fixed portion in a first moving dimension. When the connecting element is moved relative to the fixed portion in the first direction, the first blade is driven by the connecting element to move relative to the fixed portion in a second moving dimension, and the first moving dimension and the second moving dimension are different.

Abstract: A vapor chamber and a heat dissipation device with the vapor chamber are provided. The vapor chamber includes a first plate, a second plate, a first capillary strip, a first communication structure and a working medium. An accommodation space is defined by the first plate and the second plate collaboratively. The first capillary strip is installed in the accommodation space. The accommodation space is divided into a first region and a second region by the first capillary strip. The working medium is accommodated within the accommodation space. The working medium flows between the first region and the second region through the first communication structure. Since the working medium is guided to flow in the accommodation space by the first capillary strip and the first communication structure, the heat dissipating efficacy is enhanced.

Abstract: A composite-type heat pipe includes a working fluid, a first capillary structure, a second capillary structure and a pipe body. The first capillary structure has a smooth surface. The second capillary structure has plural trenches. The pipe body accommodates the working fluid. The pipe body includes a first section and a second section. The second section is connected with the first section. The first capillary structure is formed on a first inner wall of the first section. The second capillary structure with the trenches is formed on a second inner wall of the second section. The trenches extend along an axial direction of the pipe body.

Abstract: Systems and methods are disclosed for accessing data on a storage system. An apparatus, such as a data storage device or a computing device, may include a memory configured to store data. The apparatus is configured to determine an importance level for a file to be stored in the storage system. The data storage system includes one or more private storage clouds and one or more public storage clouds. The apparatus is also configured to generate a set of recovery data chunks based on the file and the importance level. The apparatus is further configured to store the set of recovery data chunks in the set of public storage clouds. The apparatus is further configured to store at least a portion of the file in the private storage cloud.

Abstract: A voltage switching device, an integrated circuit device, and a voltage switching method are provided. The voltage switching device includes a reference voltage generator generating a first reference voltage and a second reference voltage, a fuse system coupled to a circuit device, and a switch circuit coupled to the reference voltage generator, the fuse system, and the circuit device. The fuse system generates a first enable signal and a second enable signal according to an input signal from a circuit device. The switch circuit transmits the first reference voltage or the second reference voltage to the circuit device according to the first enable signal and the second enable signal from the fuse system.

Abstract: A memory device and a manufacturing method for the same are provided. The memory device comprises a stack structure and a channel structure. The stack structure is on a substrate and comprises gate electrodes and insulating films stacked alternately. The channel structure is electrically coupled to the gate electrodes, and is on sidewall surfaces of the gate electrodes. The channel structure comprises a first channel structure and a second channel structure. The second channel structure is on an upper surface of the first channel structure. The first channel structure and/or the second channel structure has a ring shape.

Abstract: A method comprises forming a plurality of interconnect structures including a dielectric layer, a metal line and a redistribution line over a carrier, attaching a semiconductor die on a first side of the plurality of interconnect structures, forming an underfill layer between the semiconductor die and the plurality of interconnect structures, mounting a top package on the first side the plurality of interconnect structures, wherein the top package comprises a plurality of conductive bumps, forming an encapsulation layer over the first side of the plurality of interconnect structures, wherein the top package is embedded in the encapsulation layer, detaching the carrier from the plurality of interconnect structures and mounting a plurality of bumps on a second side of the plurality of interconnect structures.

Abstract: The present disclosure provides an apparatus for fabricating a semiconductor device, including a first chamber for accommodating a mask, and a first ionizer in the first chamber, wherein the first ionizer is adjacent to the mask.

Abstract: A semiconductor device includes a semiconductor substrate, a bottom electrode, a magnetic tunneling junction (MTJ), a top electrode, and a residue. The bottom electrode is disposed over the semiconductor substrate. The MTJ is disposed over the bottom electrode. The top electrode is disposed over the MTJ layer. Sidewalls of the bottom electrode, the MTJ, and the top electrode are vertically aligned with each other. The residue of the MTJ is located on the sidewall of the bottom electrode.

Abstract: A system and method for fast converging gain calibration for phase lock loops (PLL) are herein disclosed. According to one embodiment, a method includes receiving, with a voltage generation circuit, an input value representing a difference between a sampled voltage and a reference voltage, and adjusting, with the voltage generation circuit, the reference voltage by generating a voltage output based on the difference represented by the input value.

Abstract: A method for manufacturing a semiconductor structure includes following operations. A sacrificial layer is formed over the conductive layer, wherein the sacrificial layer includes a first sacrificial portion over the first conductive portion, and a second sacrificial portion over the second conductive portion, and a first thickness of the first sacrificial portion is larger than a second thickness of the second sacrificial portion. The first sacrificial portion and the second sacrificial portion of the sacrificial layer, and the second conductive portion of the conductive layer are removed, with at least a portion of the first conductive portion remaining over the bottom of the trench.

Abstract: The present disclosure describes a method utilizing an ion beam etch process, instead of a RIE etch process, to form magnetic tunnel junction (MU) structures. For example, the method includes forming MTJ structure layers on an interconnect layer, where the interconnect layer includes a first area and a second area. The method further includes depositing a mask layer over the MTJ structure layers in the first area and forming masking structures over the MTJ structure layers in the second area. The method also includes etching with an ion beam etch process, the MTJ structure layers between the masking structures to form MTJ structures over vias in the second area of the interconnect layer; and removing, with the ion beam etch process, the mask layer, the top electrode, the MTJ stack, and a portion of the bottom electrode in the first area of the interconnect layer.

Abstract: A coaxial cable connector system, comprising a coaxial connector, a coaxial cable, and a universal coaxial cable fixing sleeve is provided. The universal coaxial cable fixing sleeve comprises a first gripping component, a second gripping component, and a third gripping component. When the coaxial cable is assembled to the universal coaxial cable fixing sleeve, the first gripping component grips a conductive shield of the cable, and the second and third gripping components grip a protective outer jacket of the cable, respectively. When the universal coaxial cable fixing sleeve is engaged to a first connector, a first housing outer surface thereof corresponds to and fixedly engages with a sleeve receiving inner surface of the first connector, and when disengaged and engaged to a second connector different in type from the first connector, no re-preparation of the cable is required for corresponding fixed engagement.

Abstract: An optical member driving mechanism is provided. The optical member driving mechanism includes a movable portion and a fixed portion. The movable portion includes a holder for holding an optical member with an optical axis. The movable portion is movable relative to the fixed portion. The fixed portion has a housing and a base. The housing is disposed on the base, and includes a top surface and a side surface. The top surface extends in a direction that is parallel to the optical axis. The side surface extends from an edge of the top surface in a direction that is not parallel to the optical axis. The side surface has a rectangular opening.

Abstract: Packaged semiconductor devices and methods of packaging semiconductor devices are disclosed. In some embodiments, a packaged semiconductor device includes an integrated circuit die, a molding compound disposed around the integrated circuit die, and an interconnect structure disposed over the integrated circuit die and the molding compound. The molding compound is thicker than the integrated circuit die.

Abstract: The present invention features interferon-free therapies for the treatment of HCV. Preferably, the treatment is over a shorter duration of treatment, such as no more than 16 weeks, alternatively no more than 12 weeks, or alternatively no more than 8 weeks. In one aspect, the treatment comprises administering at least two direct acting antiviral agents to a subject with HCV infection, wherein the treatment lasts for 16, 12, or 8 weeks and does not include administration of either interferon or ribavirin, and said at least two direct acting antiviral agents comprise (a) Compound 1 or a pharmaceutically acceptable salt thereof and (b) Compound 2 or a pharmaceutically acceptable salt thereof.