Abstract: A light-emitting device, including a first type semiconductor layer, a patterned insulating layer, a light-emitting layer, and a second type semiconductor layer, is provided. The patterned insulating layer covers the first type semiconductor layer and has a plurality of insulating openings. The insulating openings are separated from each other. The light-emitting layer is located in the plurality of insulating openings and covers a portion of the first type semiconductor layer. The second type semiconductor layer is located on the light-emitting layer.

Abstract: Some implementations described herein include systems and techniques for fabricating a wafer-on-wafer product using a filled lateral gap between beveled regions of wafers included in a stacked-wafer assembly and along a perimeter region of the stacked-wafer assembly. The systems and techniques include a deposition tool having an electrode with a protrusion that enhances an electromagnetic field along the perimeter region of the stacked-wafer assembly during a deposition operation performed by the deposition tool. Relative to an electromagnetic field generated by a deposition tool not including the electrode with the protrusion, the enhanced electromagnetic field improves the deposition operation so that a supporting fill material may be sufficiently deposited.

Abstract: The present disclosure, in some embodiments, relates to a method of forming an integrated chip structure. The method may be performed by forming a plurality of interconnect layers within a first interconnect structure disposed over an upper surface of a first semiconductor substrate. An edge trimming process is performed to remove parts of the first interconnect structure and the first semiconductor substrate along a perimeter of the first semiconductor substrate. The edge trimming process results in the first semiconductor substrate having a recessed surface coupled to the upper surface by way of an interior sidewall disposed directly over the first semiconductor substrate. A dielectric capping structure is formed onto a sidewall of the first interconnect structure after performing the edge trimming process.

Abstract: A die stacking method is provided. The die stacking method includes executing a manufacturing recipe, and loading an interposer-die mapping file according to the manufacturing recipe. The interposer-die mapping file corresponds to an interposer wafer including interposer dies. The die stacking method also includes loading a combination setting data according to the interposer-die mapping file, and loading a top die number and a top-die ID code of a top-die mapping file according to the combination setting data and the interposer-die mapping file. The top-die ID code corresponds to a top wafer including top dies, and the top die number corresponds to one of the top dies. The die stacking method also includes disposing the one of the top dies of the top wafer on one of the interposer dies of the interposer wafer.

Abstract: A die stacking method is provided. The die stacking method includes executing a manufacturing recipe, and loading an interposer-die mapping file according to the manufacturing recipe. The interposer-die mapping file corresponds to an interposer wafer including interposer dies. The die stacking method also includes loading a combination setting data according to the interposer-die mapping file, and loading a top die number and a top-die ID code of a top-die mapping file according to the combination setting data and the interposer-die mapping file. The top-die ID code corresponds to a top wafer including top dies, and the top die number corresponds to one of the top dies. The die stacking method also includes disposing the one of the top dies of the top wafer on one of the interposer dies of the interposer wafer.

Abstract: Embodiments of a die stacking apparatus are provided. The die stacking apparatus includes a storage device configured to contain a top wafer and an interposer wafer. The top wafer has a number of top dies, and the interposer wafer has a number of interposer dies. The die stacking apparatus also includes a carrier device configured to carry the interposer wafer, and a transferring device configured to transfer the interposer wafer to the carrier device and to dispose the top dies on the interposer dies. The die stacking apparatus further includes a process module configured to control the transferring device. The process module controls the transferring device to transfer the interposer wafer to the carrier device, and controls the transferring device to dispose the top dies on the interposer dies of the interposer wafer, which is stacked on the carrier device.

Abstract: Embodiments of a die stacking apparatus are provided. The die stacking apparatus includes a storage device configured to contain a top wafer and an interposer wafer. The top wafer has a number of top dies, and the interposer wafer has a number of interposer dies. The die stacking apparatus also includes a carrier device configured to carry the interposer wafer, and a transferring device configured to transfer the interposer wafer to the carrier device and to dispose the top dies on the interposer dies. The die stacking apparatus further includes a process module configured to control the transferring device. The process module controls the transferring device to transfer the interposer wafer to the carrier device, and controls the transferring device to dispose the top dies on the interposer dies of the interposer wafer, which is stacked on the carrier device.