Abstract: The present invention provides an electric current sensor comprising a substrate and MR sensing circuit. The substrate has a first surface along a first axis and a second axis. The MR sensing circuit is utilized to detect a magnetic filed about a third axis. The MR sensing circuit is formed onto the first surface and has a plurality of MR sensor pairs. Each MR sensor in each MR sensor pair has a plurality of conductive structures, wherein the conductive structures of one MR sensor are symmetrically arranged. Alternatively, the present invention provides an electric current sensing device using a pair of electric sensors symmetrically arranged at two lateral sides of a conductive wire having an electric current flowing therethrough for eliminating the magnetic field along Z axis generated by external environment.

Abstract: The present invention provides an electric current sensor comprising a substrate and MR sensing circuit. The substrate has a first surface along a first axis and a second axis. The MR sensing circuit is utilized to detect a magnetic filed about a third axis. The MR sensing circuit is formed onto the first surface and has a plurality of MR sensor pairs. Each MR sensor in each MR sensor pair has a plurality of conductive structures, wherein the conductive structures of one MR sensor are symmetrically arranged. Alternatively, the present invention provides an electric current sensing device using a pair of electric sensors symmetrically arranged at two lateral sides of a conductive wire having an electric current flowing therethrough for eliminating the magnetic field along Z axis generated by external environment.

Abstract: A structure of a thermoelectric film including a thermoelectric substrate and a pair of first diamond-like carbon (DLC) layers is provided. The first DLC layers are respectively located on two opposite surfaces of the thermoelectric substrate and have electrical conductivity.

Abstract: A structure of a thermoelectric film including a thermoelectric substrate and a pair of first diamond-like carbon (DLC) layers is provided. The first DLC layers are respectively located on two opposite surfaces of the thermoelectric substrate and have electrical conductivity.

Abstract: A structure of a thermoelectric film including a thermoelectric substrate and a pair of first diamond-like carbon (DLC) layers is provided. The first DLC layers are respectively located on two opposite surfaces of the thermoelectric substrate and have electrical conductivity.

Abstract: A structure of a thermoelectric film including a thermoelectric substrate and a pair of first diamond-like carbon (DLC) layers is provided. The first DLC layers are respectively located on two opposite surfaces of the thermoelectric substrate and have electrical conductivity.

Abstract: An apparatus for measuring thermal diffusivity includes a Raman spectroscope, a heating device, and a signal analyzing unit. The Raman spectroscope is utilized to measure a Raman scattering intensity of different sites of a film to be measured. The heating device is utilized to provide a controllable thermal driving wave. The signal analyzing unit is utilized to analyze the Raman scattering intensity from the Raman spectroscope and the thermal driving wave so as to evaluate the thermal diffusivity of the film to be measured.

Abstract: An apparatus for measuring thermal diffusivity includes a Raman spectroscope, a heating device, and a signal analyzing unit. The Raman spectroscope is utilized to measure a Raman scattering intensity of different sites of a film to be measured. The heating device is utilized to provide a controllable thermal driving wave. The signal analyzing unit is utilized to analyze the Raman scattering intensity from the Raman spectroscope and the thermal driving wave so as to evaluate the thermal diffusivity of the film to be measured.

Abstract: An integrated circuit structure having improved resistivity and a method for forming the same are provided. The integrated circuit structure includes a dielectric layer, an opening in the dielectric layer, and a damascene structure in the opening. The damascene structure includes a metallic barrier layer in the opening and in physical contact with the dielectric layer, a conductive material filling the remaining part of the opening, and an interlayer between and adjoining the metallic barrier layer and the conductive material. The interlayer is preferably a metal compound layer.

Abstract: An integrated circuit structure having improved resistivity and a method for forming the same are provided. The integrated circuit structure includes a dielectric layer, an opening in the dielectric layer, and a damascene structure in the opening. The damascene structure includes a metallic barrier layer in the opening and in physical contact with the dielectric layer, a conductive material filling the remaining part of the opening, and an interlayer between and adjoining the metallic barrier layer and the conductive material. The interlayer is preferably a metal compound layer.