Patents by Inventor Chih-Chen Chin

Chih-Chen Chin has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Method to improve photomask critical dimension uniformity and photomask fabrication process
    Patent number: 7060400
    Abstract: A method of fabricating a photomask having improved critical dimension (CD) uniformity that meets or exceeds 90 nanometer technology requirements. The method includes the steps of: providing a transparent substrate covered with a layer of opaque material and a layer of photoresist; patterning the layer of photoresist to expose an area of the layer of opaque material that has a shape that follows a contour of a main pattern area to be defined by the layer of opaque material; removing the exposed area to define the layer of opaque material into the main pattern area and an area that surrounds the main pattern area; removing the patterned layer of photoresist; and removing the surrounding area of the layer of opaque material.
    Type: Grant
    Filed: August 8, 2003
    Date of Patent: June 13, 2006
    Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.
    Inventors: Wen-Chuan Wang, Shih-Ming Chang, Chih-Chen Chin, Chi-Lun Lu, Sheng-Chi Chin, Hung-Chang Hsieh
  • Method to improve photomask critical dimension uniformity and photomask fabrication process
    Publication number: 20050031966
    Abstract: A method of fabricating a photomask having improved critical dimension (CD) uniformity that meets or exceeds 90 nanometer technology requirements. The method includes the steps of: providing a transparent substrate covered with a layer of opaque material and a layer of photoresist; patterning the layer of photoresist to expose an area of the layer of opaque material that has a shape that follows a contour of a main pattern area to be defined by the layer of opaque material; removing the exposed area to define the layer of opaque material into the main pattern area and an area that surrounds the main pattern area; removing the patterned layer of photoresist; and removing the surrounding area of the layer of opaque material.
    Type: Application
    Filed: August 8, 2003
    Publication date: February 10, 2005
    Inventors: Wen-Chuan Wang, Shih-Ming Chang, Chih-Chen Chin, Chi-Lun Lu, Sheng-Chi Chin, Hung-Chang Hsieh