Abstract: A metal interconnect structure includes a first metal interconnection in an inter-metal dielectric (IMD) layer on a substrate, a second metal interconnection on the first metal interconnection, and a cap layer between the first metal interconnection and the second metal interconnection. Preferably, a top surface of the first metal interconnection is even with a top surface of the IMD layer and the cap layer is made of conductive material.

Abstract: A semiconductor device package includes a substrate and an antenna module. The substrate has a first surface and a second surface opposite to the first surface. The antenna module is disposed on the first surface of the substrate with a gap. The antenna module has a support and an antenna layer. The support has a first surface facing away from the substrate and a second surface facing the substrate. The antenna layer is disposed on the first surface of the support. The antenna layer has a first antenna pattern and a first dielectric layer.

Abstract: A contact image sensor structure includes a body, a substrate, and a light source unit. The body has a first side surface and a second side surface. The body has a pin slot that passes through the first side surface and the second side surface. The second side surface has a light source receiving slot, and the light source receiving slot links with the pin slot. The substrate has a plurality of pads. The light source unit is fastened in the pin slot and the light source receiving slot. One end of the light source unit has a plurality of pins. The pins pass through the pin slot and contact the pads of the substrate. Thereby, the pins are electrically connected with the pads without welding. The life time and the reliability of the contact image sensor are enhanced, and the assembling process is simplified.