Abstract: A temperature adjustment module is provided. The temperature adjustment module includes a temperature changing module and a temperature control module. The temperature changing module includes a temperature changing area. The temperature changing module is in contact with a peripheral circuit element on a motherboard through the temperature changing area and a heat conduction material. The temperature control module is electrically connected to the temperature changing module and configured to control a temperature of the temperature changing module to reach a target temperature. The temperature changing module further includes a printed circuit board in the temperature changing area, and the temperature of the temperature changing module is changed by at least one of a winding wire or an electronic component on the printed circuit board.

Abstract: A temperature adjustment module and a temperature adjustment method are provided. The temperature adjustment module includes a temperature control module, a temperature changing module, and a temperature sensor. The temperature changing module is in contact with a peripheral circuit element and electrically connected to the temperature control module. The temperature sensor is in contact with the peripheral circuit element and electrically connected to the temperature control module. When a cool down module on a main circuit element of a mother board cools down the main circuit element, the temperature sensor detects a peripheral temperature of the peripheral circuit element. The temperature control module determines whether the peripheral temperature is lower than or higher than a target temperature to determine whether to operate the temperature changing module to perform temperature adjustment on the peripheral circuit element.

Abstract: A method includes determining a target etching depth for etching a plurality of dielectric regions in a wafer. The wafer includes a plurality of protruding semiconductor fins and the plurality of dielectric regions between the plurality of protruding semiconductor fins. The method further includes etching the plurality of dielectric regions, projecting a light beam on the wafer, and generating a spectrum from a reflected light reflected from the wafer, determining an end point for etching based on the spectrum. The end point is an expected time point. The plurality of dielectric regions are etched to the target etching depth. The etching of the plurality of dielectric regions is stopped at the end point.

Abstract: An electronic device includes an outer case, a circuit substrate, a thermopile sensor chip, a filter structure, and a waterproof structure. The outer case has an opening. The circuit substrate is disposed inside the outer case. The thermopile sensor chip is disposed on the circuit substrate. The filter structure is disposed above the thermopile sensor chip. The waterproof structure is surroundingly connected between the filter structure and the outer case, wherein the waterproof structure has a through hole for exposing the filter structure and communicated with the opening of the outer case.

Abstract: A transistor includes a gate structure that has a first gate dielectric layer and a second gate dielectric layer. The first gate dielectric layer is disposed over the substrate. The first gate dielectric layer contains a first type of dielectric material that has a first dielectric constant. The second gate dielectric layer is disposed over the first gate dielectric layer. The second gate dielectric layer contains a second type of dielectric material that has a second dielectric constant. The second dielectric constant is greater than the first dielectric constant. The first dielectric constant and the second dielectric constant are each greater than a dielectric constant of silicon oxide.

Abstract: A method includes determining a target etching depth for etching a plurality of dielectric regions in a wafer. The wafer includes a plurality of protruding semiconductor fins and the plurality of dielectric regions between the plurality of protruding semiconductor fins. The method further includes etching the plurality of dielectric regions, projecting a light beam on the wafer, and generating a spectrum from a reflected light reflected from the wafer, determining an end point for etching based on the spectrum. The end point is an expected time point. The plurality of dielectric regions are etched to the target etching depth. The etching of the plurality of dielectric regions is stopped at the end point.

Abstract: A method and structure providing an optical sensor having an optimized Ge—Si interface includes providing a substrate having a pixel region and a logic region. In some embodiments, the method further includes forming a trench within the pixel region. In various examples, and after forming the trench, the method further includes forming a doped semiconductor layer along sidewalls and along a bottom surface of the trench. In some embodiments, the method further includes forming a germanium layer within the trench and over the doped semiconductor layer. In some examples, and after forming the germanium layer, the method further includes forming an optical sensor within the germanium layer.

Abstract: Pseudo resistor having an auto-tune function automatically calibrates resistance of the pseudo resistor and compensates for DC drift based on an output signal of an electrical circuit to which the pseudo resistor is coupled, as to mitigate signal phenomenon in the output signal caused by PVT variation. The pseudo resistor includes first transistor, second transistor, and adder. The first terminal of the second transistor is coupled to the first terminal of the first transistor and forms a first common node. The control terminal of the first transistor is coupled to the control terminal of the second transistor and forms second common node. The adder is coupled between the first and second common nodes and configured to receive adjustment voltage for generating a bias voltage for controlling the first and second transistors, where the adjustment voltage corresponds to the output signal coupled to the second terminal of the second transistor.

Abstract: An optical element driving mechanism is provided and includes a fixed assembly, a movable assembly, a driving assembly and a circuit assembly. The movable assembly is configured to connect an optical element, the movable assembly is movable relative to the fixed assembly, and the optical element has an optical axis. The driving assembly is configured to drive the movable assembly to move relative to the fixed assembly. The circuit assembly includes a plurality of circuits and is affixed to the fixed assembly.

Abstract: A semiconductor device includes a semiconductor substrate, a first semiconductor stack, a second semiconductor stack, a first gate structure, and a second gate structure. The semiconductor substrate comprising a first device region and a second device region. The first semiconductor stack is located on the semiconductor substrate over the first device region, and has first channels. The second semiconductor stack is located on the semiconductor substrate over the second device region, and has second channels. A total number of the first channels is greater than a total number of the second channels. The first gate structure encloses the first semiconductor stack. The second gate structure encloses the second semiconductor stack.

Abstract: An optical element driving mechanism is provided and includes a fixed assembly, a movable assembly, a driving assembly and a stopping assembly. The fixed assembly has a main axis. The movable assembly is configured to connect an optical element, and the movable assembly is movable relative to the fixed assembly. The driving assembly is configured to drive the movable assembly to move relative to the fixed assembly. The stopping assembly is configured to limit the movement of the movable assembly relative to the fixed assembly within a range of motion.

Abstract: A transistor includes a gate structure that has a first gate dielectric layer and a second gate dielectric layer. The first gate dielectric layer is disposed over the substrate. The first gate dielectric layer contains a first type of dielectric material that has a first dielectric constant. The second gate dielectric layer is disposed over the first gate dielectric layer. The second gate dielectric layer contains a second type of dielectric material that has a second dielectric constant. The second dielectric constant is greater than the first dielectric constant. The first dielectric constant and the second dielectric constant are each greater than a dielectric constant of silicon oxide.

Abstract: A hinge assembly for a folding vehicle seat includes upper and lower arms pivotally coupled to one another between open and closed positions. The lower arm is fixedly coupled to a support surface, such as a vehicle body, and the upper arm is fixedly coupled to a lower surface of a seat pan. A retaining bar is disposed on the lower arm and outwardly extends therefrom. An outwardly opening clip member is disposed on the upper arm. The clip member releasably receives the retaining bar of the lower arm when the upper and lower arms are in the closed position to retain the vehicle seat in a folded down use position.

Abstract: A folding seat assembly for e vehicle includes a folding seat pan that is pivotally mounted to a support surface and includes a mounting aperture disposed therethrough. A seatback is coupled to the support surface and includes an outwardly extending bracket with an upwardly extending engagement feature disposed thereon. An engagement member having a frame portion disposed on a lower surface of the seat pan and first and second sidewalls upwardly extending through the mounting aperture, the sidewalls including opposed inwardly extending tabs for receiving the engagement feature therebetween when the seat pan is in a use position.

Abstract: A hinge assembly for a folding vehicle seat includes upper and lower arms pivotally coupled to one another between open and closed positions. The lower arm is fixedly coupled to a support surface, such as a vehicle body, and the upper arm is fixedly coupled to a lower surface of a seat pan. A retaining bar is disposed on the lower arm and outwardly extends therefrom. An outwardly opening clip member is disposed on the upper arm. The clip member releasably receives the retaining bar of the lower arm when the upper and lower arms are in the closed position to retain the vehicle seat in a folded down use position.

Abstract: A folding seat assembly for e vehicle includes a folding seat pan that is pivotally mounted to a support surface and includes a mounting aperture disposed therethrough. A seatback is coupled to the support surface and includes an outwardly extending bracket with an upwardly extending engagement feature disposed thereon. An engagement member having a frame portion disposed on a lower surface of the seat pan and first and second sidewalls upwardly extending through the mounting aperture, the sidewalls including opposed inwardly extending tabs for receiving the engagement feature therebetween when the seat pan is in a use position.

Abstract: A connector module includes a first connector, a first electrode, a second connector and a second electrode. The first connector has a plug hole. The first electrode is disposed in the plug hole. The second connector has a connecting portion. A projecting area of the connecting portion is larger than that area of the plug hole. The second electrode is disposed at the connecting portion. When the connecting portion is disposed in the first connector, the first electrode contacts the second electrode and an inner wall of the plug hole restrains the connecting portion from detaching from the plug hole. An electronic device with the connector module is also disclosed herein.

Abstract: A connector module includes a first connector, a first electrode, a second connector and a second electrode. The first connector has a plug hole. The first electrode is disposed in the plug hole. The second connector has a connecting portion. A projecting area of the connecting portion is larger than that area of the plug hole. The second electrode is disposed at the connecting portion. When the connecting portion is disposed in the first connector, the first electrode contacts the second electrode and an inner wall of the plug hole restrains the connecting portion from detaching from the plug hole. An electronic device with the connector module is also disclosed herein.

Abstract: A linkage and a supporter are attached to a back of the housing via a magnetic element of an electronic device with a magnetic supporter. The supporter is drawn to a supporting position via the linkage to support the electronic device body and provide various angles for the user to easily operate the electronic device in several modes. Moreover, since the linkage and the supporter are attached via the magnetic element, when the electronic device body is overloaded, for example, a user applies overlarge force to operate a touch panel, the magnetic element is detached from the electronic device body to prevent the linkage and the supporter from being damaged or permanently destroyed.

Abstract: A vehicle seat for coupling to the floor of a vehicle comprising a seat back, a seat cushion, a first bracket, and a second bracket. The seat back is pivotable between at least a first position and a design position. The seat cushion is configured to be coupled to the vehicle floor. The first bracket is configured to be coupled to the vehicle floor and includes one of a keyed passage and a keyed pin configured to be received within the keyed passage. The second bracket is coupled to the seat back and includes the other one of the keyed passage and the keyed pin configured to be received within the keyed passage. The keyed passage is configured to receive the keyed pin only when the seat back is in a position the seat back will be prevented from assuming after the vehicle seat has been installed in the vehicle.