Patents by Inventor Chih-Cheng Yu
Chih-Cheng Yu has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Publication number: 20240145470Abstract: A method for processing an integrated circuit includes forming first and second gate all around transistors. The method forms a dipole oxide in the first gate all around transistor without forming the dipole oxide in the second gate all around transistor. This is accomplished by entirely removing an interfacial dielectric layer and a dipole-inducing layer from semiconductor nanosheets of the second gate all around transistor before redepositing the interfacial dielectric layer on the semiconductor nanosheets of the second gate all around transistor.Type: ApplicationFiled: January 5, 2024Publication date: May 2, 2024Inventors: Lung-Kun CHU, Mao-Lin HUANG, Chung-Wei HSU, Jia-Ni YU, Kuo-Cheng CHIANG, Kuan-Lun CHENG, Chih-Hao WANG
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Patent number: 11961840Abstract: A semiconductor device structure is provided. The device includes one or more first semiconductor layers, each first semiconductor layer of the one or more first semiconductor layers is surrounded by a first intermixed layer, wherein the first intermixed layer comprises a first material and a second material.Type: GrantFiled: August 9, 2022Date of Patent: April 16, 2024Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.Inventors: Mao-Lin Huang, Lung-Kun Chu, Chung-Wei Hsu, Jia-Ni Yu, Kuo-Cheng Chiang, Kuan-Lun Cheng, Chih-Hao Wang
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Publication number: 20240120402Abstract: A semiconductor device structure, along with methods of forming such, are described. The semiconductor device structure includes a first dielectric feature extending along a first direction, the first dielectric feature comprising a first dielectric layer having a first sidewall and a second sidewall opposing the first sidewall, a first semiconductor layer disposed adjacent the first sidewall, the first semiconductor layer extending along a second direction perpendicular to the first direction, a second dielectric feature extending along the first direction, the second dielectric feature disposed adjacent the first semiconductor layer, and a first gate electrode layer surrounding at least three surfaces of the first semiconductor layer, and a portion of the first gate electrode layer is exposed to a first air gap.Type: ApplicationFiled: November 19, 2023Publication date: April 11, 2024Applicant: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.Inventors: Jia-Ni YU, Kuo-Cheng CHIANG, Mao-Lin HUANG, Lung-Kun CHU, Chung-Wei HSU, Chun-Fu LU, Chih-Hao WANG, Kuan-Lun CHENG
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Patent number: 11952231Abstract: A paper feeding device includes a pickup roller mechanism disposed at an entrance of a paper feeding path, and a separation mechanism disposed to a rear end of the pickup roller mechanism. The pickup roller mechanism includes a first pickup unit positioned at the entrance of the paper feeding path, a second pickup unit mounted to a rear end of the first pickup unit, and a third pickup unit disposed to a rear end of the second pickup unit. The second pickup unit includes a first driving gear. The third pickup unit includes a second driving gear, and a transmission belt looped around an outer periphery of the first driving gear and an outer periphery of the second driving gear.Type: GrantFiled: April 11, 2022Date of Patent: April 9, 2024Assignee: Foxlink Image Technology Co., Ltd.Inventors: Wei Pin Hsieh, Chih Cheng Yu
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Publication number: 20240114614Abstract: Disclosed is a thermal conduction-electrical conduction isolated circuit board with a ceramic substrate and a power transistor embedded, mainly comprising: a dielectric material layer, a heat-dissipating ceramic block, a securing portion, a stepped metal electrode layer, a power transistor, and a dielectric material packaging, wherein a via hole is formed in the dielectric material layer, the heat-dissipating ceramic block is correspondingly embedded in the via hole, the heat-dissipating ceramic block has a thermal conductivity higher than that of the dielectric material layer and a thickness less than that of the dielectric material layer, the stepped metal electrode layer conducts electricity and heat for the power transistor, the dielectric material packaging is configured to partially expose the source connecting pin, drain connecting pin, and gate connecting pin of the encapsulated stepped metal electrode layer.Type: ApplicationFiled: September 29, 2022Publication date: April 4, 2024Inventors: HO-CHIEH YU, CHEN-CHENG-LUNG LIAO, CHUN-YU LIN, JASON AN CHENG HUANG, CHIH-CHUAN LIANG, KUN-TZU CHEN, NAI-HIS HU, LIANG-YO CHEN
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Publication number: 20240113195Abstract: Semiconductor structures and methods for forming the same are provided. The semiconductor structure includes a plurality of first nanostructures formed over a substrate, and a dielectric wall adjacent to the first nanostructures. The semiconductor structure also includes a first liner layer between the first nanostructures and the dielectric wall, and the first liner layer is in direct contact with the dielectric wall. The semiconductor structure also includes a gate structure surrounding the first nanostructures, and the first liner layer is in direct contact with a portion of the gate structure.Type: ApplicationFiled: February 22, 2023Publication date: April 4, 2024Applicant: Taiwan Semiconductor Manufacturing Company, Ltd.Inventors: Jia-Ni YU, Lung-Kun CHU, Chun-Fu LU, Chung-Wei HSU, Mao-Lin HUANG, Kuo-Cheng CHIANG, Chih-Hao WANG
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Patent number: 11948987Abstract: A semiconductor device according to the present disclosure includes a source feature and a drain feature, a plurality of semiconductor nanostructures extending between the source feature and the drain feature, a gate structure wrapping around each of the plurality of semiconductor nanostructures, a bottom dielectric layer over the gate structure and the drain feature, a backside power rail disposed over the bottom dielectric layer, and a backside source contact disposed between the source feature and the backside power rail. The backside source contact extends through the bottom dielectric layer.Type: GrantFiled: September 9, 2020Date of Patent: April 2, 2024Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.Inventors: Lung-Kun Chu, Mao-Lin Huang, Chung-Wei Hsu, Jia-Ni Yu, Kuo-Cheng Chiang, Kuan-Lun Cheng, Chih-Hao Wang
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Publication number: 20240096880Abstract: In some embodiments, the present disclosure relates to an integrated chip. The integrated chip includes a first channel structure configured to transport charge carriers within a first transistor device and a first gate electrode layer wrapping around the first channel structure. A second channel structure is configured to transport charge carriers within a second transistor device. A second gate electrode layer wraps around the second channel structure. The second gate electrode layer continuously extends from around the second channel structure to cover the first gate electrode layer. A third channel structure is configured to transport charge carriers within a third transistor device. A third gate electrode layer wraps around the third channel structure. The third gate electrode layer continuously extends from around the third channel structure to cover the second gate electrode layer.Type: ApplicationFiled: November 16, 2023Publication date: March 21, 2024Inventors: Mao-Lin Huang, Chih-Hao Wang, Kuo-Cheng Chiang, Jia-Ni Yu, Lung-Kun Chu, Chung-Wei Hsu
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Publication number: 20240096994Abstract: A method for forming a semiconductor device is provided. The method includes forming a plurality of first channel nanostructures and a plurality of second channel nanostructures in an n-type device region and a p-type device region of a substrate, respectively, and sequentially depositing a gate dielectric layer, an n-type work function metal layer, and a cap layer surrounding each of the first and second channel nanostructures. The cap layer merges in first spaces between adjacent first channel nanostructures and merges in second spaces between adjacent second channel nanostructures. The method further includes selectively removing the cap layer and the n-type work function metal layer in the p-type device region, and depositing a p-type work function metal layer over the cap layer in the n-type device region and the gate dielectric layer in the p-type device region. The p-type work function metal layer merges in the second spaces.Type: ApplicationFiled: February 10, 2023Publication date: March 21, 2024Inventors: Lung-Kun CHU, Jia-Ni YU, Chun-Fu LU, Mao-Lin HUANG, Kuo-Cheng CHIANG, Chih-Hao WANG
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Publication number: 20240088145Abstract: Examples of an integrated circuit with gate cut features and a method for forming the integrated circuit are provided herein. In some examples, a workpiece is received that includes a substrate and a plurality of fins extending from the substrate. A first layer is formed on a side surface of each of the plurality of fins such that a trench bounded by the first layer extends between the plurality of fins. A cut feature is formed in the trench. A first gate structure is formed on a first fin of the plurality of fins, and a second gate structure is formed on a second fin of the plurality of fins such that the cut feature is disposed between the first gate structure and the second gate structure.Type: ApplicationFiled: November 27, 2023Publication date: March 14, 2024Inventors: Zhi-Chang Lin, Wei-Hao Wu, Jia-Ni Yu, Chih-Hao Wang, Kuo-Cheng Ching
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Publication number: 20240080376Abstract: A task dispatching method for EPD tag devices includes receiving a task command; the server system forwarding the task command to a target router to which the target EPD tag device is connected; the target router checking whether the target EPD tag device is currently connected thereto; when it is determined that the target EPD tag device is not currently connected to the target router, the target router notifying the server system that the target EPD tag device is offline; in response to receiving an online notification indicating that the target EPD tag device is connected to another router, the server system updating a connection list accordingly, and forwarding the task command to an updated target router; and when it is determined that the target EPD tag device is currently connected to the target router, the target router delivering the task command to the target EPD tag device.Type: ApplicationFiled: April 27, 2023Publication date: March 7, 2024Inventors: Chih-Cheng Chang, Feng-Hsiang Chung, Yi-Bin Yu
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Publication number: 20240029769Abstract: Systems and method are provided for a memory circuit that includes a bit cell responsive to a bit line signal line and a bit line bar signal line configured to store a bit of data. A pre-charge circuit is configured to charge one of the bit line and bit line bar signal lines prior to a read operation, where the pre-charge circuit includes a first pre-charge component and a second pre-charge component, the first and second pre-charge components being individually controllable for charging the bit line and bit line bar signal lines.Type: ApplicationFiled: July 26, 2023Publication date: January 25, 2024Inventors: Wei-Cheng Wu, Kao-Cheng Lin, Chih-Cheng Yu, Pei-Yuan Li, Chien-Chen Lin, Wei Min Chan, Yen-Huei Chen
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Patent number: 11749321Abstract: Systems and method are provided for a memory circuit that includes a bit cell responsive to a bit line signal line and a bit line bar signal line configured to store a bit of data. A pre-charge circuit is configured to charge one of the bit line and bit line bar signal lines prior to a read operation, where the pre-charge circuit includes a first pre-charge component and a second pre-charge component, the first and second pre-charge components being individually controllable for charging the bit line and bit line bar signal lines.Type: GrantFiled: August 23, 2021Date of Patent: September 5, 2023Assignee: Taiwan Semiconductor Manufacturing Company LimitedInventors: Wei-Cheng Wu, Kao-Cheng Lin, Chih-Cheng Yu, Pei-Yuan Li, Chien-Chen Lin, Wei Min Chan, Yen-Huei Chen
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Publication number: 20230009156Abstract: A paper feeding device includes a pickup roller mechanism disposed at an entrance of a paper feeding path, and a separation mechanism disposed to a rear end of the pickup roller mechanism. The pickup roller mechanism includes a first pickup unit positioned at the entrance of the paper feeding path, a second pickup unit mounted to a rear end of the first pickup unit, and a third pickup unit disposed to a rear end of the second pickup unit. The second pickup unit includes a first driving gear. The third pickup unit includes a second driving gear, and a transmission belt looped around an outer periphery of the first driving gear and an outer periphery of the second driving gear.Type: ApplicationFiled: April 11, 2022Publication date: January 12, 2023Inventors: Wei Pin Hsieh, Chih Cheng Yu
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Publication number: 20210383847Abstract: Systems and method are provided for a memory circuit that includes a bit cell responsive to a bit line signal line and a bit line bar signal line configured to store a bit of data. A pre-charge circuit is configured to charge one of the bit line and bit line bar signal lines prior to a read operation, where the pre-charge circuit includes a first pre-charge component and a second pre-charge component, the first and second pre-charge components being individually controllable for charging the bit line and bit line bar signal lines.Type: ApplicationFiled: August 23, 2021Publication date: December 9, 2021Inventors: Wei-Cheng Wu, Kao-Cheng Lin, Chih-Cheng Yu, Pei-Yuan Li, Chien-Chen Lin, Wei Min Chan, Yen-Huei Chen
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Patent number: 11100964Abstract: Systems and method are provided for a memory circuit that includes a bit cell responsive to a bit line signal line and a bit line bar signal line configured to store a bit of data. A pre-charge circuit is configured to charge one of the bit line and bit line bar signal lines prior to a read operation, where the pre-charge circuit includes a first pre-charge component and a second pre-charge component, the first and second pre-charge components being individually controllable for charging the bit line and bit line bar signal lines.Type: GrantFiled: February 10, 2020Date of Patent: August 24, 2021Assignee: Taiwan Semiconductor Manufacturing Company LimitedInventors: Wei-Cheng Wu, Kao-Cheng Lin, Chih-Cheng Yu, Pei-Yuan Li, Chien-Chen Lin, Wei Min Chan, Yen-Huei Chen
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Publication number: 20210249057Abstract: Systems and method are provided for a memory circuit that includes a bit cell responsive to a bit line signal line and a bit line bar signal line configured to store a bit of data. A pre-charge circuit is configured to charge one of the bit line and bit line bar signal lines prior to a read operation, where the pre-charge circuit includes a first pre-charge component and a second pre-charge component, the first and second pre-charge components being individually controllable for charging the bit line and bit line bar signal lines.Type: ApplicationFiled: February 10, 2020Publication date: August 12, 2021Inventors: Wei-Cheng Wu, Kao-Cheng Lin, Chih-Cheng Yu, Pei-Yuan Li, Chien-Chen Lin, Wei Min Chan, Yen-Huei Chen