Patents by Inventor Chih-Chi Wei

Chih-Chi Wei has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Patent number: 11955518
    Abstract: An epitaxial structure includes a composite base unit and an emitter unit. The composite base unit includes a first base layer and a second base layer formed on the first base layer. The first base layer is made of a material of InxGa(1-x)As(1-y)Ny, in which 0<x?0.2, and 0?y?0.035, and when y is not 0, x=3y. The second base layer is made of a material InmGa(1-m)As, in which 0.03?m?0.2. The emitter unit is formed on the second base layer 12 opposite to the first base layer 11, and is made of an indium gallium phosphide-based material. A transistor including the epitaxial structure is also disclosed.
    Type: Grant
    Filed: April 19, 2021
    Date of Patent: April 9, 2024
    Assignee: Xiamen Sanan Integrated Circuit Co., Ltd.
    Inventors: Chih-Hung Yen, Wenbi Cai, Houng-Chi Wei
  • Patent number: D692679
    Type: Grant
    Filed: November 30, 2012
    Date of Patent: November 5, 2013
    Inventor: Chih-Chi Wei
  • Patent number: D731199
    Type: Grant
    Filed: December 3, 2013
    Date of Patent: June 9, 2015
    Inventor: Chih-Chi Wei