Abstract: A stackable organizer comprising a first tray, at least one first layer support and a second tray. The first tray comprises a first tray recess and a first tray wall. The at least one first layer support comprises an insertion and a body, wherein the body comprises a body recess. The second tray comprises a second tray recess and a second tray wall, wherein the second tray is coupled to the first tray by inserting the insertion into the second tray recess and locking the first tray wall within the body recess. A method for assembling the aforementioned stackable organizer is also disclosed. The method comprises: inserting the insertion into the second tray recess; and locking the first tray wall within the body recess. Another method is also disclosed, comprising: locking the first tray wall within the body recess; and inserting the insertion into the second tray recess.

Abstract: A method for performing link management of a memory device in predetermined communications architecture with aid of handshaking phase transition control and associated apparatus are provided. The method may include: utilizing at least one upper layer controller of a transmission interface circuit to turn on a physical layer (PHY) circuit of the transmission interface circuit, for starting establishing a link between a host device and the memory device; before entering a first handshaking phase, utilizing the PHY circuit to receive any first incoming data sent from the host device to determine whether the any first incoming data indicates that the host device is in a corresponding first handshaking phase; and in response to the any first incoming data indicating that the host device is in the corresponding first handshaking phase, utilizing the PHY circuit to send first outgoing data that is equal to first predetermined data to the host device.

Abstract: A data security verification method and an electronic apparatus are provided. In the data security verification method, when the electronic apparatus is powered on, a verification circuit verifies integrity of an executable image in a storage device. If verification fails, the verification circuit stops a host processor from executing the executable image. If the verification is successful, the verification circuit releases a host reset, and a processor reads and executes the executable image. When the processor reads the executable image, the verification circuit re-verifies the executable image, and the processor executes the executable image according to a verification result.

Abstract: An embodiment composite material for semiconductor package mount applications may include a first component including a tin-silver-copper alloy and a second component including a tin-bismuth alloy or a tin-indium alloy. The composite material may form a reflowed bonding material having a room temperature tensile strength in a range from 80 MPa to 100 MPa when subjected to a reflow process. The reflowed bonding material may include a weight fraction of bismuth that is in a range from approximately 4% to approximately 15%. The reflowed bonding material may an alloy that is solid solution strengthened by a presence of bismuth or indium that is dissolved within the reflowed bonding material or a solid solution phase that includes a minor component of bismuth dissolved within a major component of tin. In some embodiments, the reflowed bonding material may include intermetallic compounds formed as precipitates such as Ag3Sn and/or Cu6Sn5.

Abstract: A method for manufacturing a nanosheet semiconductor device includes forming a poly gate on a nanosheet stack which includes at least one first nanosheet and at least one second nanosheet alternating with the at least one first nanosheet; recessing the nanosheet stack to form a source/drain recess proximate to the poly gate; forming an inner spacer laterally covering the at least one first nanosheet; and selectively etching the at least one second nanosheet.

Abstract: A method includes depositing solder paste over first contact pads of a first package component. Spring connectors of a second package component are aligned to the solder paste. The solder paste is reflowed to electrically and physically couple the spring connectors of the second package component to the first contact pads of the first package component. A device includes a first package component and a second package component electrically and physically coupled to the first package component by way of a plurality of spring coils. Each of the plurality of spring coils extends from the first package component to the second package component.

Abstract: A long term evolution (LTE) base station and wireless resource scheduling method thereof are provided. The LTE base station receives a transmission period, a tolerable time shift, a start transmission time instant, and a required resource amount from each of a plurality of machine type communication apparatuses. The LTE base station decides a scheduling time length according to the transmission periods, decides a scheduling interval according to a start scheduling time instant and the scheduling time length, decides at least one transmission time instant for each machine type communication apparatus according to the transmission periods, the tolerable time shifts, the start transmission time instants, and the required resource amounts, and transmits each of the at least one transmission time instant to the corresponding machine type communication apparatus so that each of the machine type communication apparatus transmits data according to the corresponding at least one transmission time instant.

Abstract: A long term evolution (LTE) base station and wireless resource scheduling method thereof are provided. The LTE base station receives a transmission period, a tolerable time shift, a start transmission time instant, and a required resource amount from each of a plurality of machine type communication apparatuses. The LTE base station decides a scheduling time length according to the transmission periods, decides a scheduling interval according to a start scheduling time instant and the scheduling time length, decides at least one transmission time instant for each machine type communication apparatus according to the transmission periods, the tolerable time shifts, the start transmission time instants, and the required resource amounts, and transmits each of the at least one transmission time instant to the corresponding machine type communication apparatus so that each of the machine type communication apparatus transmits data according to the corresponding at least one transmission time instant.

Abstract: The present invention discloses an integrated system for remote monitoring home appliances by a cell phone. In the integrated system, a cell phone sends an instruction message to a computer by a wireless network. A digital control disk connected with the computer generates a control signal in accordance with the instruction message. The control signal is sent by a wireless transceiver circuit to a home appliance. Moreover, a state signal that includes information of the home appliance operation can be sent to the digital control disk. Through the computer connecting to the wireless network, the cell phone is informed of the information of the home appliance operation. Thereby, the user can control the home appliances and acquire the current operation states of the home appliances by his/her cell phone.

Abstract: A transistor structure with high reliability includes a substrate unit, a solid ozone boundary layer, a gate oxide layer and a gate electrode. In addition, the substrate unit has a substrate body, a source electrode exposed on a top surface of the substrate body, and a drain electrode exposed on the top surface of the substrate body and separated from the source electrode by a predetermined distance. The solid ozone boundary layer is gradually grown on the top surface of the substrate body by continually mixing gaseous ozone into deionized water under 40˜95?, and the solid ozone boundary layer is formed between the source electrode and the drain electrode and formed on the substrate body. The gate oxide layer is formed on a top surface of the solid ozone boundary layer. The gate electrode is formed on a top surface of the gate oxide layer.

Abstract: A method for fabricating a semiconductor memory device includes providing a substrate having thereon a conductive layer, forming an etching stop layer, a first dielectric layer and a second dielectric layer on the substrate, etching high aspect ratio hole into the etching stop layer, the first dielectric layer and the second dielectric layer to expose a portion of the conductive layer, thereafter selectively removing the first dielectric layer from the hole, thereby forming a bottle-shaped hole, then forming a conductive layer on interior surface of the bottle-shaped hole, and then stripping the first and second dielectric layers.

Abstract: A method for forming a stack capacitor includes providing a substrate with a bottom layer, a BPSG layer, a USG layer and a top layer thereon; using the top layer as a hard mask and the substrate as a first etching stop layer to perform a dry etching process to form a tapered trench in the bottom layer, the BPSG layer and the USG layer; removing the top layer to perform a selective wet etching process to partially remove the BPSG layer; depositing conformally a poly-Si layer and filling the trench with a sacrificial layer; removing the poly-Si layer unmasked by the sacrificial layer; using the bottom layer as a second etching stop layer to perform a wet etching process to remove the USG layer and BPSG layer; performing a static drying process; and depositing a dielectric layer and a conductive material to form the stack capacitor.

Abstract: A method for forming a stack capacitor includes providing a substrate with a bottom layer, a BPSG layer, a USG layer and a top layer thereon; using the top layer as a hard mask and the substrate as a first etching stop layer to perform a dry etching process to form a tapered trench in the bottom layer, the BPSG layer and the USG layer; removing the top layer to perform a selective wet etching process to partially remove the BPSG layer; depositing conformally a poly-Si layer and filling the trench with a sacrificial layer; removing the poly-Si layer unmasked by the sacrificial layer; using the bottom layer as a second etching stop layer to perform a wet etching process to remove the USG layer and BPSG layer; performing a static drying process; and depositing a dielectric layer and a conductive material to form the stack capacitor.