Abstract: The present disclosure provides a semiconductor structure with having a source/drain feature with a central cavity, and a source/drain contact feature formed in central cavity of the source/drain region, wherein the source/drain contact feature is nearly wrapped around by the source/drain region. The source/drain contact feature may extend to a lower most of a plurality semiconductor layers.

Abstract: A bonded assembly includes an interposer; a semiconductor die that is attached to the interposer and including a planar horizontal bottom surface and a contoured sidewall; a high bandwidth memory (HBM) die that is attached to the interposer; and a dielectric material portion contacting the semiconductor die and the interposer. The contoured sidewall includes a vertical sidewall segment and a non-horizontal, non-vertical surface segment that is adjoined to a bottom edge of the vertical sidewall segment and is adjoined to an edge of the planar horizontal bottom surface of the semiconductor die. The vertical sidewall segment and the non-horizontal, non-vertical surface segment are in contact with the dielectric material portion. The contoured sidewall may provide a variable lateral spacing from the HBM die to reduce local stress in a portion of the HBM die that is proximal to the interposer.

Abstract: A LED epitaxial-Chip with patterned GaN based substrate is provided. The LED epitaxial-Chip includes a substrate, a butter layer formed on the substrate, unintentional doped intrinsic GaN layer formed on the substrate, n-GaN layer formed on the substrate, InGaN active layer formed on the substrate, multiple quantum well formed on the substrate; and p-GaN layer formed on the sapphire substrate. The substrate has DBR reflection layer formed thereon. The DBR reflection layer is layered structure grown by two materials having different refractive index periodically alternate. The reflection layer forms at least two spaced patterned structures on the substrate. A manufacturing method of LED epitaxial-Chip with patterned GaN based substrate is also provided.

Abstract: A method of recording image files to CD. The real-time method of recording digital image files to CD establishes ISO file parameters of a waiting recordable CD, and determines the files' recording location accordingly, with no need for additional hard drive or computer support.

Abstract: An integrated coder/decoder (CODEC) apparatus converts incoming data into outgoing data. The integrated CODEC apparatus includes a plurality of CODEC modules. Each CODEC module is for encoding the incoming data to produce the outgoing data or for decoding the incoming data to produce the outgoing data. A processing unit is electrically coupled to the plurality of CODEC modules for controlling at least one of the CODEC modules to convert the incoming data into the outgoing data according to an original data format of the incoming data or according to a target data format of the outgoing data.

Abstract: An indexing method for indexing a plurality of multimedia data sets stored in a first storage area includes the following steps: producing an index file according to a predetermined section of target multimedia data, and storing the index file in a second storage area; and comparing the index file with the plurality of multimedia data sets. If a similarity of the index file and a predetermined section of a particular multimedia data set is greater than a predetermined first threshold, the particular multimedia data set is determined to be the target multimedia data.

Abstract: A multimedia playback device includes a memory module for recording a plurality of sets of first image data, a merging module electrically connected to the memory module for merging the sets of first image data to produce second image data, and a playback module electrically connected to the merging module for driving a display device according to the second image data to simultaneously display images in a display area corresponding to the sets of first image data.

Abstract: A method for improving a performance of a heterojunction bipolar transistor is provided. The method includes steps of providing a substrate; forming a first at least one semiconductor layer on the substrate; forming a second at least one semiconductor layer on the first at least one semiconductor layer; and inserting a thermal treatment process within the second at least one semiconductor layer so as to improve a performance of the heterojuntion bipolar transistor. Furthermore, the thermal treatment process is performed at a temperature ranged from 300° C. to 800° C.

Abstract: A method for buffer management in a video encoder is provided. When a possibility of buffer overflow is higher, a filter function is enabled in an I picture and a not coded function is enabled in a P or B picture. Furthermore, when the fullness of buffer reaches a predetermine threshold, the filter function is enabled in the I picture and a skip function is directly enabled in the P or B picture.

Abstract: A method of recording image files to CD. The real-time method of recording digital image files to CD establishes ISO file parameters of a waiting recordable CD, and determines the files' recording location accordingly, with no need for additional hard drive or computer support.