Abstract: A pair of shoe covers has a first cover body and a second cover body. The first cover body has a first board, a first wall, and a first connector. The first board has a first supporting surface defined in a top of the first board. The first wall is formed on a periphery of the first board and protrudes from the first supporting surface. The first connector is disposed on the first board. The second cover body is detachably combined with the first cover body and has a second board, a second wall, and a second connector. The second board has a second supporting surface defined in a top of the second board. The second wall is formed on a periphery of the second board and protrudes from the second supporting surface. The second connector is disposed on the second board.

Abstract: A semiconductor device includes a gate, a first electrode, a first insulating layer, an active layer, an etching stop layer, a second insulating layer, a source, a drain and a second electrode. The first insulating layer covers the gate and the first electrode. The active layer and the etching stop layer are disposed on the first insulating layer above the gate and the first electrode respectively. The second insulating layer covers the active layer and the etching stop layer and has a first opening and a second opening exposing the active layer and a third opening exposing the etching stop layer. The source and the drain are disposed on the second insulating layer and contact with the active layer through the first opening and the second opening respectively. The second electrode is located on the second insulating layer and contacts with the etching stop layer through the third opening.

Abstract: The present invention provides a method for preventing or treating a functional gastrointestinal disorder in a subject in need thereof that includes a step of administering a composition, wherein the composition includes an effective amount of Lactobacillus plantarum subsp. plantarum PS128 and a carrier. The present invention further provides a method for preventing or treating visceral hypersensitivity in a subject in need thereof that includes a step of administering a composition, wherein the composition includes an effective amount of Lactobacillus plantarum subsp. plantarum PS128 and a carrier. Moreover, the present invention provides a method for preventing or treating functional abdominal pain, irritable bowel syndrome or constipation in a subject in need thereof that includes a step of administering a composition, wherein the composition includes an effective amount of Lactobacillus plantarum subsp. plantarum PS128 and a carrier.

Abstract: A sensing apparatus including a first scan line, a second scan line, a readout line, a first sensing device and a second sensing device is provided. The first sensing device is coupled to the first scan line and the readout line, and senses a first energy, and outputs a first readout signal corresponding to the first energy to the readout line in response to a first scan signal on the first scan line. The first sensing device is reset in response to the first scan signal and a reference signal on the readout line. The first sensing device includes a first reset unit configured for resetting the first sensing device, where a first terminal of the first reset unit is coupled to the first scan line, and a control terminal of the first reset unit is coupled to the readout line. A driving method thereof is also provided.

Abstract: A semiconductor device structure is provided. The semiconductor device structure may include a substrate, a semiconductor layer, a first conductive layer, a second conductive layer, a first dielectric layer and a second dielectric layer. The first dielectric layer is disposed on the substrate. The second dielectric layer is disposed on the first dielectric layer. The semiconductor layer is adjacent to the first dielectric layer or the second dielectric layer. The semiconductor layer is disposed on the first dielectric layer or the second dielectric layer. The first conductive layer is adjacent to the first dielectric layer or the second dielectric layer. The second conductive layer is disposed on the first dielectric layer or the second dielectric layer. The effective Young's modulus of the second dielectric layer may be smaller than the Young's modulus of the first dielectric layer.

Abstract: A semiconductor device includes a gate, a first electrode, a first insulating layer, an active layer, an etching stop layer, a second insulating layer, a source, a drain and a second electrode. The first insulating layer covers the gate and the first electrode. The active layer and the etching stop layer are disposed on the first insulating layer above the gate and the first electrode respectively. The second insulating layer covers the active layer and the etching stop layer and has a first opening and a second opening exposing the active layer and a third opening exposing the etching stop layer. The source and the drain are disposed on the second insulating layer and contact with the active layer through the first opening and the second opening respectively. The second electrode is located on the second insulating layer and contacts with the etching stop layer through the third opening.

Abstract: A semiconductor device includes a gate, a first electrode, a first insulating layer, an active layer, an etching stop layer, a second insulating layer, a source, a drain and a second electrode. The first insulating layer covers the gate and the first electrode. The active layer and the etching stop layer are disposed on the first insulating layer above the gate and the first electrode respectively. The second insulating layer covers the active layer and the etching stop layer and has a first opening and a second opening exposing the active layer and a third opening exposing the etching stop layer. The source and the drain are disposed on the second insulating layer and contact with the active layer through the first opening and the second opening respectively. The second electrode is located on the second insulating layer and contacts with the etching stop layer through the third opening.

Abstract: A flap door mechanism with closable function includes a door member, a resilient member and a spring arm member. The door member is pivoted to a casing. The resilient member is installed on the door member and for driving the door member to rotate in a first direction. The resilient member includes a first end and a second end. The spring arm member is selectively disposed on the door member or on the casing. The spring arm member abuts against the first end. When the door member rotates in a second direction opposite to the first direction, the spring arm member is pushed to bend by the first end or is pressed to flatten by the casing, so as to reduce deformation between the first end and the second end of the resilient member.

Abstract: A double-side light emitting display panel includes a substrate, a plurality of top emission pixel structures and a plurality of bottom emission pixel structures. The top emission pixel structures are disposed on the substrate, and the bottom emission pixel structures are disposed on the substrate. The top emission pixel structures and the bottom emission pixel structures are arranged alternatively on the substrate.

Abstract: A flap door mechanism with closable function includes a door member, a resilient member and a spring arm member. The door member is pivoted to a casing. The resilient member is installed on the door member and for driving the door member to rotate in a first direction. The resilient member includes a first end and a second end. The spring arm member is selectively disposed on the door member or on the casing. The spring arm member abuts against the first end. When the door member rotates in a second direction opposite to the first direction, the spring arm member is pushed to bend by the first end or is pressed to flatten by the casing, so as to reduce deformation between the first end and the second end of the resilient member.

Abstract: A light emitting device includes a substrate, and a plurality of light emitting structures disposed thereon. Each of the light emitting structures includes an auxiliary electrode disposed on the substrate, a first insulating layer disposed on the substrate and covering the auxiliary electrode, an electrode disposed on the first insulating layer, a second insulating layer disposed on the first insulating layer and having a first opening exposing the electrode, an organic light emitting layer disposed in the first opening, a cathode disposed on the organic light emitting layer, at least a conductive structure penetrating through the first insulating layer and the second insulating layer, and a closed ring structure disposed on the second insulating layer and around the cathode, wherein a thickness of the closed ring structure is larger than that of the cathode.

Abstract: A semiconductor device structure is provided. The semiconductor device structure may include a substrate, a semiconductor layer, a first conductive layer, a second conductive layer, a first dielectric layer and a second dielectric layer. The first dielectric layer is disposed on the substrate. The second dielectric layer is disposed on the first dielectric layer. The semiconductor layer is adjacent to the first dielectric layer or the second dielectric layer. The semiconductor layer is disposed on the first dielectric layer or the second dielectric layer. The first conductive layer is adjacent to the first dielectric layer or the second dielectric layer. The second conductive layer is disposed on the first dielectric layer or the second dielectric layer. The effective Young's modulus of the second dielectric layer may be smaller than the Young's modulus of the first dielectric layer.

Abstract: A semiconductor device is provided. A first semiconductor layer is disposed on a substrate and has a channel region and two doped regions beside the channel region. A first dielectric layer is disposed on the substrate and covers the first semiconductor layer. A gate is disposed on the first dielectric layer and corresponds to the channel region of the first semiconductor layer. A second dielectric layer is disposed on the first dielectric layer and covers the gate. A second semiconductor layer is disposed on the second dielectric layer and corresponds to the gate. The boundary of the second semiconductor layer does not exceed that of the gate. At least one first conductive plug penetrates through the first and second dielectric layers and contacts one doped region of the first semiconductor layer. At least one contact contacts the second semiconductor layer. A method of forming a semiconductor device is also provided.

Abstract: A sensing apparatus including a first scan line, a second scan line, a readout line, a first sensing device and a second sensing device is provided. The first sensing device is coupled to the first scan line and the readout line, and senses a first energy, and outputs a first readout signal corresponding to the first energy to the readout line in response to a first scan signal on the first scan line. The first sensing device is reset in response to the first scan signal and a reference signal on the readout line. The first sensing device includes a first reset unit configured for resetting the first sensing device, where a first terminal of the first reset unit is coupled to the first scan line, and a control terminal of the first reset unit is coupled to the readout line. A driving method thereof is also provided.

Abstract: A semiconductor device includes a gate, a first electrode, a first insulating layer, an active layer, an etching stop layer, a second insulating layer, a source, a drain and a second electrode. The first insulating layer covers the gate and the first electrode. The active layer and the etching stop layer are disposed on the first insulating layer above the gate and the first electrode respectively. The second insulating layer covers the active layer and the etching stop layer and has a first opening and a second opening exposing the active layer and a third opening exposing the etching stop layer. The source and the drain are disposed on the second insulating layer and contact with the active layer through the first opening and the second opening respectively. The second electrode is located on the second insulating layer and contacts with the etching stop layer through the third opening.

Abstract: A pixel structure including a first switch device, an amplifying device, a first display unit, a second switch device, and a second display unit is provided. The first switch device is coupled to a scan line, a data line, and the amplifying device. The amplifying device is coupled to a bias voltage. The first display unit is coupled to the amplifying device and a switching voltage. The second switch device is coupled to the first display unit, the first switch device, and the second display unit. The second display unit is coupled to a common voltage. A hybrid display apparatus and a driving method are also provided.

Abstract: A sensing device including first and second scan lines, a readout line, first and second sensing units is provided. The first sensing unit is coupled to the first scan line, the second scan line, and the readout line and configured to sense a first energy. The first sensing unit outputs a first readout signal corresponding to the first energy to the readout line in response to a first scan signal on the first scan line. The second sensing unit is coupled to the second scan line and the readout line and configured to sense a second energy. The second sensing unit outputs a second readout signal corresponding to the second energy to the readout line in response to a second scan signal on the second scan line. The second scan signal works in cooperation with the first scan signal to reset the first sensing unit.

Abstract: An exemplary active matrix display device includes a display panel comprising a plurality of scanning lines extending along a horizontal axis, a plurality of data lines extending along a vertical axis, and a plurality of dummy data lines. Two scanning lines and two data lines define two display pixels; each of the plurality of data lines is connected to at least two adjacent display pixels along the horizontal axis, and the at least two adjacent display pixels are driven by the two scanning lines, respectively. Each of the plurality of dummy data lines is disposed between two random adjacent data lines and is provided with gray scale voltage signals by a driving circuit of the display panel, thereby forming coupling capacitances between each of the plurality of dummy data lines and two pixel electrodes of the two display pixels.

Abstract: An input method applied to an electronic device which can execute a text editing function is disclosed. The input method includes following steps: triggering a multi-function calling unit to execute an auxiliary input function which provides at least one application module when the text editing function is executed; selecting and executing the application module; and providing an assistance function. When the auxiliary input function is executed, the text editing function continues being executed. According to the disclosure, users can use multi-function operation while information input with a portable electronic device. That is, users do not need to jump out from the window of the input program to the computer operation system to look up for another assistant program, but can edit a document efficiently and smoothly.

Abstract: A pixel structure, a driving method and a driving system of a hybrid display apparatus are provided. The pixel structure includes a scan line, a data line, a first active device, a first signal line, a second signal line, an electro-phoretic display device, a second active device and an organic light emitting diode device. The first active device is electrically connected to the scan line and the data line. The electro-phoretic display device is electrically connected to the first active device and the first signal line. The second active device is electrically connected to the first active device and the first signal line. The organic light emitting diode device is electrically connected to the second active device and the second signal line.