Abstract: A method of fabricating an image TFT array of a direct X-ray image sensor includes forming a first transparent conductive layer on a substrate; forming a gate line including a gate electrode, a common line, and a common electrode jutting out from the common line; forming an insulation layer; forming a semiconducting island on the insulation layer in the transistor region; forming a first via hole for the common electrode; forming a data line and a source electrode and a drain electrode; forming a passivation layer and a second via hole penetrating the passivation layer for the source electrode; forming a second transparent conductive layer as a top electrode. The insulation layer is formed on the first transparent conductive layer to serve as a dielectric layer of a capacitor before the TFT structure formed and can be formed at a relatively high temperature.

Abstract: A method of utilizing dual-layer photoresist to form black matrixes and spacers on a control circuit substrate is provided. The dual-layer photoresist includes a layer of black resin and a layer of transparent photoresist. The black resin, having an optical density greater than three, is mainly used to achieve the effect of black matrix. The transparent photoresist is mainly used to satisfy the needed cell gap between two transparent substrates.

Abstract: In the image TFT array structure, at least one first line, a lower electrode, a pad electrode, a common electrode and a first electrode connected with the first line are defined simultaneously by etching a first conductive layer. At least one second line intersecting the first line, an upper electrode corresponding to the lower electrode, a second electrode connected with the second line and a third electrode connected with the upper electrode are defined simultaneously by etching a second conductive layer applied to cover the substrate and above the first conductive layer. The lower electrode and the upper electrode of the storage capacitor have an approximately same large area.

Abstract: In the image TFT array structure, at least one first line, a lower electrode, a pad electrode, a common electrode and a first electrode connected with the first line are defined simultaneously by etching a first conductive layer. At least one second line intersecting the first line, an upper electrode corresponding to the lower electrode, a second electrode connected with the second line and a third electrode connected with the upper electrode are defined simultaneously by etching a second conductive layer applied to cover the substrate and above the first conductive layer. The lower electrode and the upper electrode of the storage capacitor have an approximately same large area.

Abstract: The present invention discloses a method of manufacturing an image TFT array and a structure thereof. A substrate is provided. At least one first line, a lower electrode, a pad electrode, a common electrode and a first electrode connected with the first line are defined simultaneously by etching a first conductive layer. At least one second line intersecting the first line, an upper electrode corresponding to the lower electrode, a second electrode connected with the second line and a third electrode connected with the upper electrode are defined simultaneously by etching a second conductive layer applied to cover the substrate and above the first conductive layer.

Abstract: A method of fabricating an image TFT array of a direct X-ray image sensor includes forming a first transparent conductive layer on a substrate; forming a gate line including a gate electrode, a common line, and a common electrode jutting out from the common line; forming an insulation layer; forming a semiconducting island on the insulation layer in the transistor region; forming a first via hole for the common electrode; forming a data line and a source electrode and a drain electrode; forming a passivation layer and a second via hole penetrating the passivation layer for the source electrode; forming a second transparent conductive layer as a top electrode. The insulation layer is formed on the first transparent conductive layer to serve as a dielectric layer of a capacitor before the TFT structure formed and can be formed at a relatively high temperature.

Abstract: A method of fabricating an image TFT array of a direct X-ray image sensor includes forming a first transparent conductive layer on a substrate; forming a gate line including a gate electrode, a common line, and a common electrode jutting out from the common line; forming an insulation layer; forming a semiconducting island on the insulation layer in the transistor region; forming a first via hole for the common electrode; forming a data line and a source electrode and a drain electrode; forming a passivation layer and a second via hole penetrating the passivation layer for the source electrode; forming a second transparent conductive layer as a top electrode. The insulation layer is formed on the first transparent conductive layer to serve as a dielectric layer of a capacitor before the TFT structure formed and can be formed at a relatively high temperature.

Abstract: A method of fabricating an image TFT array of a direct X-ray image sensor includes forming a first transparent conductive layer on a substrate; forming a gate line including a gate electrode, a common line, and a common electrode jutting out from the common line; forming an insulation layer; forming a semiconducting island on the insulation layer in the transistor region; forming a first via hole for the common electrode; forming a data line and a source electrode and a drain electrode; forming a passivation layer and a second via hole penetrating the passivation layer for the source electrode; forming a second transparent conductive layer as a top electrode. The insulation layer is formed on the first transparent conductive layer to serve as a dielectric layer of a capacitor before the TFT structure formed and can be formed at a relatively high temperature.

Abstract: The present invention discloses a method of manufacturing an image TFT array and a structure thereof. A substrate is provided. At least one first line, a lower electrode, a pad electrode, a common electrode and a first electrode connected with the first line are defined simultaneously by etching a first conductive layer. At least one second line intersecting the first line, an upper electrode corresponding to the lower electrode, a second electrode connected with the second line and a third electrode connected with the upper electrode are defined simultaneously by etching a second conductive layer applied to cover the substrate and above the first conductive layer.

Abstract: On a substrate, the pattern of the first conductive layer is defined, that is, a gate line combination including gate pads, scanning lines and gate electrodes. A gate insulating layer, a semiconductor layer, a doped semiconductor layer and a second conductive layer are deposited on the substrate and the above-mentioned gate line combination in sequence. A photoresist layer is overlaid on the second conductive layer. The photoresist layer within the aperture areas is fully exposed. Using a half-tone mask or a slit pattern to make parts of the photoresist layer lying on the gate pads and the gate electrodes are not exposed to its full depth. As a result, the photoresist pattern formed varies in thickness. After being processed with drying etching and wet etching for several times, all the layers previously deposited within the aperture areas can be totally etched and removed.

Abstract: A method of utilizing dual-layer photoresist to form black matrixes and spacers on a control circuit substrate is provided. The dual-layer photoresist includes a layer of black resin and a layer of transparent photoresist. The black resin, having an optical density greater than three, is mainly used to achieve the effect of black matrix. The transparent photoresist is mainly used to satisfy the needed cell gap between two transparent substrates.

Abstract: A color liquid crystal display includes a control circuit located on a first transparent substrate. The control circuit includes control devices and a chessboard-like circuit with supporting areas. A passivation layer is located on the control circuit and has contact windows to expose electrodes of the control devices. A color filter layer is located on the passivation layer and pixel electrodes are located on the color filter layer. The pixel electrodes are electrically connected to the electrodes of the control devices through the contact windows. First photoresist layers are located on the supporting areas and the control devices, and second photoresist layers are located on the first photoresist layers. A common electrode is located on a surface of a second transparent substrate that faces the first transparent substrate. A liquid crystal layer is located between the first and the second transparent substrates.

Abstract: A method of utilizing dual-layer photoresist to form black matrixes and spacers on a control circuit substrate is provided. The dual-layer photoresist is composed of a layer of black resin and a layer of transparent photoresist. The black resin, of which optical density is greater than three, is mainly used to achieve the effect of black matrix. The transparent photoresist is mainly used to satisfy the needed cell gap between two transparent substrates.

Abstract: An integrated color filter comprising a glass substrate; an active matrix, including a plurality of switching elements, formed on the glass substrate; a plurality of color-filter units formed on the active matrix; a plurality of pixel electrodes formed on the color-filter units and electrically connected to the switching elements; and a transparent planarization layer formed on the pixel electrodes. Electrical testing can be performed immediately after completion of the pixel electrodes, such that, if defects are found, the panel can be first discarded, eliminating production time for a transparent planarization layer on the discarded panel and costs thereof.

Abstract: On a substrate, the pattern of the first conductive layer is defined, that is, a gate line combination including gate pads, scanning lines and gate electrodes. A gate insulating layer, a semiconductor layer, a doped semiconductor layer and a second conductive layer are deposited on the substrate and the above-mentioned gate line combination in sequence. A photoresist layer is overlaid on the second conductive layer. The photoresist layer within the aperture areas is fully exposed. Using a half-tone mask or a slit pattern to make parts of the photoresist layer lying on the gate pads and the gate electrodes are not exposed to its full depth. As a result, the photoresist pattern formed varies in thickness. After being processed with drying etching and wet etching for several times, all the layers previously deposited within the aperture areas can be totally etched and removed.

Abstract: A method of utilizing dual-layer photoresist to form black matrixes and spacers on a control circuit substrate is provided. The dual-layer photoresist is composed of a layer of black resin and a layer of transparent photoresist. The black resin, of which optical density is greater than three, is mainly used to achieve the effect of black matrix. The transparent photoresist is mainly used to satisfy the needed cell gap between two transparent substrates.