Patents by Inventor Chih-Chieh Yeh

Chih-Chieh Yeh has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Structure and formation method of semiconductor device structure with nanowires
    Patent number: 10991811
    Abstract: A semiconductor device structure is provided. The semiconductor device structure includes a substrate having a plurality of nanowires over an input-output region, and a protective layer surrounding the nanowires. The protective layer is made of silicon, silicon germanium, silicon oxide, silicon nitride, silicon sulfide, or a combination thereof. The semiconductor device structure also includes a high-k dielectric layer surrounding the protective layer, and a gate electrode surrounding the high-k dielectric layer. The semiconductor device structure further includes a source/drain portion adjacent to the gate electrode, and an interlayer dielectric layer over the source/drain portion.
    Type: Grant
    Filed: August 1, 2019
    Date of Patent: April 27, 2021
    Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD
    Inventors: Chao-Ching Cheng, Wei-Sheng Yun, Shao-Ming Yu, Tsung-Lin Lee, Chih-Chieh Yeh
  • Vertical transistor device and method for fabricating the same
    Patent number: 10978422
    Abstract: A method includes forming a fin structure over a semiconductor substrate; forming a liner covering the fin structure; etching back the liner to expose an upper portion of the fin structure; forming a spacer covering the upper portion of the fin structure; etching the liner to expose a middle portion of the fin structure, wherein the remaining liner covers a lower portion of the fin structure; etching the middle portion of the fin structure; and forming a first source/drain structure surrounding the middle portion of the fin structure.
    Type: Grant
    Filed: May 22, 2020
    Date of Patent: April 13, 2021
    Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.
    Inventors: Wei-Sheng Yun, Shao-Ming Yu, Chih-Chieh Yeh
  • Interface Trap Charge Density Reduction
    Publication number: 20210098305
    Abstract: The present disclosure provides methods of fabricating a semiconductor device. A method according to one embodiment includes forming, on a substrate, a first fin formed of a first semiconductor material and a second fin formed of a second semiconductor material different from the first semiconductor material, forming a semiconductor cap layer over the first fin and the second fin, and annealing the semiconductor cap layer at a first temperature while at least a portion of the semiconductor cap layer is exposed.
    Type: Application
    Filed: July 10, 2020
    Publication date: April 1, 2021
    Inventors: Szu-Chi Yang, Allen Chien, Cheng-Ting Ding, Chien-Chih Lin, Chien-Chih Lee, Shih-Hao Lin, Tsung-Hung Lee, Chih Chieh Yeh, Po-Kai Hsiao, Tsai-Yu Huang
  • Method for forming a semiconductor device including a stacked wire structure
    Patent number: 10930782
    Abstract: A semiconductor device structure is provided. The semiconductor device structure includes a substrate and a stacked wire structure formed over the substrate. The semiconductor device structure also includes a gate structure formed over a middle portion of the stacked wire structure and a source/drain (S/D) structure formed at two opposite sides of the stacked wire structure. The S/D structure includes a top surface, a sidewall surface, and a rounded corner between the top surface and the sidewall surface.
    Type: Grant
    Filed: July 15, 2019
    Date of Patent: February 23, 2021
    Assignee: Taiwan Semiconductor Manufacturing Co., Ltd.
    Inventors: Cheng-Hsien Wu, Chih-Chieh Yeh, Yee-Chia Yeo
  • VERTICAL SEMICONDUCTOR DEVICE WITH STEEP SUBTHRESHOLD SLOPE
    Publication number: 20210028172
    Abstract: A semiconductor device includes a first source/drain structure, a channel layer, a second source/drain structure, a gate structure and an epitaxial layer. The channel layer is above the first source/drain structure. The second source/drain structure is above the channel layer. The gate structure is on opposite first and second sidewalls of the channel layer when viewed in a first cross-section taken along a first direction. The gate structure is also on a third sidewall of the channel layer but absent from a fourth sidewall of the channel layer when viewed in a second cross-section taken along a second direction different from the first direction. The epitaxial layer is on the fourth sidewall of the channel layer when viewed in the second cross-section and forming a P-N junction with the channel layer.
    Type: Application
    Filed: October 8, 2020
    Publication date: January 28, 2021
    Applicant: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.
    Inventors: Hung-Li CHIANG, Szu-Wei HUANG, Chih-Chieh YEH, Yee-Chia YEO
  • SEMICONDUCTOR DEVICE
    Publication number: 20210020763
    Abstract: A device includes a semiconductor fin, a first epitaxy structure and a gate stack. The semiconductor fin protrudes from a substrate. The first epitaxy feature laterally surrounds a first portion of the semiconductor fin. The gate stack laterally surrounds a second portion of the semiconductor fin above the first portion of the semiconductor fin, wherein the second portion of the semiconductor fin has a lower surface roughness than the first epitaxy feature.
    Type: Application
    Filed: October 7, 2020
    Publication date: January 21, 2021
    Applicant: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.
    Inventors: Wei-Sheng YUN, Shao-Ming YU, Tung-Ying LEE, Chih-Chieh YEH
  • FIN FIELD EFFECT TRANSISTOR (FINFET) DEVICE STRUCTURE WITH DUMMY FIN STRUCTURE
    Publication number: 20210020517
    Abstract: A fin field effect transistor (FinFET) device structure with dummy fin structures and method for forming the same are provided. The FinFET device structure includes an isolation structure over a substrate, and a first fin structure extended above the isolation structure. The fin field effect transistor (FinFET) device structure includes a second fin structure adjacent to the first fin structure, and a material layer formed over the fin structure. The material layer and the isolation structure are made of different materials, the material layer has a top surface with a top width and a bottom surface with a bottom width, and the bottom width is greater than the top width.
    Type: Application
    Filed: September 24, 2020
    Publication date: January 21, 2021
    Applicant: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.
    Inventors: Tzung-Yi TSAI, Yen-Ming CHEN, Tsung-Lin LEE, Chih-Chieh YEH
  • Method of manufacturing a semiconductor device with separated merged source/drain structure
    Patent number: 10886268
    Abstract: In a method of forming a semiconductor device including a fin field effect transistor (FinFET), a sacrificial layer is formed over a source/drain structure of a FinFET structure and an isolation insulating layer. A mask pattern is formed over the sacrificial layer. The sacrificial layer and the source/drain structure are patterned by using the mask pattern as an etching mask, thereby forming openings adjacent to the patterned sacrificial layer and source/drain structure. A dielectric layer is formed in the openings. After the dielectric layer is formed, the patterned sacrificial layer is removed to form a contact opening over the patterned source/drain structure. A conductive layer is formed in the contact opening.
    Type: Grant
    Filed: February 10, 2017
    Date of Patent: January 5, 2021
    Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.
    Inventors: Tung Ying Lee, Chih Chieh Yeh, Tsung-Lin Lee, Yee-Chia Yeo, Meng-Hsuan Hsiao
  • Dual nitride stressor for semiconductor device and method of manufacturing
    Patent number: 10872893
    Abstract: A method for manufacturing a semiconductor device includes forming a fin structure over a substrate and forming a first gate structure over a first portion of the fin structure. A first nitride layer is formed over a second portion of the fin structure. The first nitride layer is exposed to ultraviolet radiation. Source/drain regions are formed at the second portion of the fin structure.
    Type: Grant
    Filed: October 28, 2019
    Date of Patent: December 22, 2020
    Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.
    Inventors: Yu-Lin Yang, Chia-Cheng Ho, Chih Chieh Yeh, Cheng-Yi Peng, Tsung-Lin Lee
  • Semiconductor device and method of manufacturing the same
    Patent number: 10867841
    Abstract: In a method of forming a semiconductor device including a fin field effect transistor (FinFET), a first sacrificial layer is formed over a source/drain structure of a FinFET structure and an isolation insulating layer. The first sacrificial layer is patterned, thereby forming an opening. A first liner layer is formed on the isolation insulating layer in a bottom of opening and at least side faces of the patterned first sacrificial layer. After the first liner layer is formed, a dielectric layer is formed in the opening. After the dielectric layer is formed, the patterned first sacrificial layer is removed, thereby forming a contact opening over the source/drain structure. A conductive layer is formed in the contact opening.
    Type: Grant
    Filed: October 7, 2019
    Date of Patent: December 15, 2020
    Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.
    Inventors: Meng-Hsuan Hsiao, Yee-Chia Yeo, Tung Ying Lee, Chih Chieh Yeh
  • Strained Nanowire CMOS Device and Method of Forming
    Publication number: 20200357885
    Abstract: Transistor structures and methods of forming transistor structures are provided. The transistor structures include alternating layers of a first epitaxial material and a second epitaxial material. In some embodiments, one of the first epitaxial material and the second epitaxial material may be removed for one of an n-type or p-type transistor. A bottommost layer of the first epitaxial material and the second epitaxial material maybe be removed, and sidewalls of one of the first epitaxial material and the second epitaxial material may be indented or recessed.
    Type: Application
    Filed: July 27, 2020
    Publication date: November 12, 2020
    Inventors: Cheng-Yi Peng, Hung-Li Chiang, Yu-Lin Yang, Chih Chieh Yeh, Yee-Chia Yeo, Chi-Wen Liu
  • METHOD OF MANUFACTURING A SEMICONDUCTOR DEVICE WITH MULTILAYERED CHANNEL STRUCTURE
    Publication number: 20200357914
    Abstract: A semiconductor device includes a fin field effect transistor (FinFET). The FinFET includes a channel disposed on a fin, a gate disposed over the channel and a source and drain. The channel includes at least two pairs of a first semiconductor layer and a second semiconductor layer formed on the first semiconductor layer. The first semiconductor layer has a different lattice constant than the second semiconductor layer. A thickness of the first semiconductor layer is three to ten times a thickness of the second semiconductor layer at least in one pair.
    Type: Application
    Filed: July 27, 2020
    Publication date: November 12, 2020
    Inventors: Chao-Ching CHENG, Chih Chieh YEH, Cheng-Hsien WU, Hung-Li CHIANG, Jung-Piao CHIU, Tzu-Chiang CHEN, Tsung-Lin LEE, Yu-Lin YANG, I-Sheng CHEN
  • SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THE SAME
    Publication number: 20200357684
    Abstract: In a method of forming a semiconductor device including a fin field effect transistor (FinFET), a first sacrificial layer is formed over a source/drain structure of a FinFET structure and an isolation insulating layer. The first sacrificial layer is patterned, thereby forming an opening. A first liner layer is formed on the isolation insulating layer in a bottom of opening and at least side faces of the patterned first sacrificial layer. After the first liner layer is formed, a dielectric layer is formed in the opening. After the dielectric layer is formed, the patterned first sacrificial layer is removed, thereby forming a contact opening over the source/drain structure. A conductive layer is formed in the contact opening.
    Type: Application
    Filed: July 27, 2020
    Publication date: November 12, 2020
    Inventors: Meng-Hsuan HSIAO, Yee-Chia YEO, Tung Ying LEE, Chih Chieh YEH
  • Self-aligned contact and manufacturing method thereof
    Patent number: 10825907
    Abstract: A semiconductor device and a method of forming the semiconductor device is disclosed. A sacrificial film is used to pattern a contact to a semiconductor structure, such as a contact to a source/drain region of a transistor. The contact may include a tapered profile along an axis parallel to the gate electrode such that an outermost width of the contact decreases as the contact extends away from the source/drain region.
    Type: Grant
    Filed: July 30, 2018
    Date of Patent: November 3, 2020
    Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.
    Inventors: Tung Ying Lee, Chih Chieh Yeh, Jeng-Ya David Yeh, Yuan-Hung Chiu, Chi-Wen Liu, Yee-Chia Yeo
  • FIN field effect transistor (FinFET) device structure with dummy FIN structure
    Patent number: 10811318
    Abstract: A fin field effect transistor (FinFET) device structure with dummy fin structures and method for forming the same are provided. The FinFET device structure includes an isolation structure over a substrate, and a first fin structure extended above the isolation structure. The FinFET device structure includes a second fin structure embedded in the isolation structure, and a liner layer formed on sidewalls of the first fin structures and sidewalls of the second fin structures. The FinFET device structure includes a material layer formed over the second fin structures, and the material layer and the isolation structure are made of different materials.
    Type: Grant
    Filed: December 30, 2019
    Date of Patent: October 20, 2020
    Assignee: Taiwan Semiconductor Manufacturing Co., Ltd.
    Inventors: Tzung-Yi Tsai, Yen-Ming Chen, Tsung-Lin Lee, Chih-Chieh Yeh
  • SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREOF
    Publication number: 20200328300
    Abstract: A semiconductor device includes first channel layers disposed over a substrate, a first source/drain region disposed over the substrate, a gate dielectric layer disposed on each of the first channel layers, a gate electrode layer disposed on the gate dielectric. Each of the first channel layers includes a semiconductor wire made of a first semiconductor material. The semiconductor wire passes through the first source/drain region and enters into an anchor region. At the anchor region, the semiconductor wire has no gate electrode layer and no gate dielectric, and is sandwiched by a second semiconductor material.
    Type: Application
    Filed: June 29, 2020
    Publication date: October 15, 2020
    Inventors: I-Sheng CHEN, Chih Chieh YEH, Cheng-Hsien WU
  • Vertical gate semiconductor device with steep subthreshold slope
    Patent number: 10804268
    Abstract: A semiconductor device includes a substrate, a first source/drain structure, a vertical channel layer, a gate structure, a second source/drain structure and a body epitaxial layer. The first source/drain structure is over the substrate. The vertical channel layer is over the first source/drain structure. The gate structure is on a first sidewall of the vertical channel layer. The second source/drain structure is over the vertical channel layer. The body epitaxial layer is on a second sidewall of the vertical channel layer. The body epitaxial layer and the vertical channel layer are of opposite conductivity types, and the body epitaxial layer is separated from the gate structure.
    Type: Grant
    Filed: April 22, 2019
    Date of Patent: October 13, 2020
    Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.
    Inventors: Hung-Li Chiang, Szu-Wei Huang, Chih-Chieh Yeh, Yee-Chia Yeo
  • Semiconductor device and method for manufacturing the same
    Patent number: 10804375
    Abstract: A method for manufacturing a semiconductor device is provided by follows. A fin is formed over a substrate. A spacer is formed on a sidewall of a first portion of the fin. An epitaxy feature is grown from a second portion of the fin that is in a position lower than the first portion of the fin, in which the forming the epitaxy feature is performed after the forming the spacer. The spacer is removed to expose the first portion of the fin. A gate stack is formed around the exposed first portion of the fin.
    Type: Grant
    Filed: June 23, 2017
    Date of Patent: October 13, 2020
    Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.
    Inventors: Wei-Sheng Yun, Shao-Ming Yu, Tung-Ying Lee, Chih-Chieh Yeh
  • Gate stacks for stack-fin channel I/O devices and nanowire channel core devices
    Patent number: 10804367
    Abstract: A semiconductor device includes a substrate; an I/O device over the substrate; and a core device over the substrate. The I/O device includes a first gate structure having an interfacial layer; a first high-k dielectric stack over the interfacial layer; and a conductive layer over and in physical contact with the first high-k dielectric stack. The core device includes a second gate structure having the interfacial layer; a second high-k dielectric stack over the interfacial layer; and the conductive layer over and in physical contact with the second high-k dielectric stack. The first high-k dielectric stack includes the second high-k dielectric stack and a third dielectric layer.
    Type: Grant
    Filed: September 29, 2017
    Date of Patent: October 13, 2020
    Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.
    Inventors: Chao-Ching Cheng, Wei-Sheng Yun, I-Sheng Chen, Shao-Ming Yu, Tzu-Chiang Chen, Chih Chieh Yeh
  • VERTICAL TRANSISTOR DEVICE AND METHOD FOR FABRICATING THE SAME
    Publication number: 20200286857
    Abstract: A method includes forming a fin structure over a semiconductor substrate; forming a liner covering the fin structure; etching back the liner to expose an upper portion of the fin structure; forming a spacer covering the upper portion of the fin structure; etching the liner to expose a middle portion of the fin structure, wherein the remaining liner covers a lower portion of the fin structure; etching the middle portion of the fin structure; and forming a first source/drain structure surrounding the middle portion of the fin structure.
    Type: Application
    Filed: May 22, 2020
    Publication date: September 10, 2020
    Applicant: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.
    Inventors: Wei-Sheng YUN, Shao-Ming YU, Chih-Chieh YEH