Abstract: A method of controlling a wafer stage includes moving the wafer stage to position an immersion hood over a first sensor in the wafer stage. The method further includes moving the wafer stage to position the immersion hood over a first particle capture area on the wafer stage after moving the wafer stage to position the immersion hood over the first sensor. The method further includes moving the wafer stage to define a first routing track over the first particle capture area. The method further includes moving the wafer stage to position the immersion hood over an area for receiving a wafer on the wafer stage after defining the first routing track.

Abstract: A method of controlling a wafer stage includes moving the wafer stage to position an immersion hood over a first sensor in the wafer stage. The method further includes moving the wafer stage to position the immersion hood over a second sensor in the wafer stage. The method further includes moving the wafer stage to position the immersion hood over a first particle capture area on the wafer stage after moving the wafer stage to position the immersion hood over the second sensor. The method further includes moving the wafer stage to define a routing track over the first particle capture area. The method further includes moving the wafer stage to position the immersion hood over an area for receiving a wafer on the wafer stage after defining the routing track over the first particle capture area.

Abstract: A wafer stage includes an area for receiving a wafer. The wafer stage further includes a first sensor outside of the area for receiving the wafer. The wafer stage further includes a second sensor outside of the area of receiving the wafer, wherein the second sensor is spaced from the first sensor. The wafer stage further includes a first particle capture area outside of the area for receiving the wafer, wherein the first particle capture area is spaced from both the first sensor and the second sensor, a dimension of the first particle capture area in a first direction parallel to a top surface of the wafer stage is at least 26 millimeters (mm), a dimension of the first particle capture area in a second direction parallel to the top surface of the wafer stage is at least 33 mm, and the second direction is perpendicular to the first direction.

Abstract: A wet etching solution according to the present disclosure is an etching solution for selectively removing a second metal layer made of at least one of a cobalt-based material or a copper-based material from a semiconductor substrate while suppressing etching of a first metal layer made of a tungsten-based material, the first metal layer and the second metal layer being co-present on the semiconductor substrate, an oxide layer being formed on a surface layer of at least the at least one of a cobalt-based material or a copper-based material. The wet etching solution includes a solution in which a ?-diketone containing a trifluoromethyl group and a carbonyl group bonded together is dissolved in an organic solvent.

Abstract: A method of controlling a wafer stage includes moving the wafer stage to position an immersion hood over a first sensor in the wafer stage. The method further includes moving the wafer stage to position the immersion hood over a second sensor in the wafer stage. The method further includes moving the wafer stage to position the immersion hood over a first particle capture area on the wafer stage after moving the wafer stage to position the immersion hood over the second sensor. The method further includes moving the wafer stage to define a routing track over the first particle capture area. The method further includes moving the wafer stage to position the immersion hood over an area for receiving a wafer on the wafer stage after defining the routing track over the first particle capture area.

Abstract: A light path adjustment mechanism includes a bracket, a light valve, a carrier, a first axis, a second axis and an optical plate member. A surface normal of a surface of the light valve crosses the bracket to define an intersection closest to the surface of the light valve, and the bracket has an end point furthest from the intersection measured in the direction of the surface normal. A distance between the intersection and the surface measured in the direction of the surface normal is smaller than a distance between the intersection and the end point measured in the direction of the surface normal.

Abstract: A light path adjustment mechanism includes a carrier, an optical plate member, a support, a base, a first pair of transmission mechanical pieces, and a second pair of transmission mechanical pieces. One side of the support is provided with a first actuator, and one side of the base is provided with a second actuator. The first pair of transmission mechanical pieces are connected between the base and the support, and the second pair of transmission mechanical pieces are connected between the carrier and the support. The first pair of transmission mechanical pieces are entirely disposed on only one side of the carrier.

Abstract: A wafer stage includes an area for receiving a wafer. The wafer stage further includes a first sensor outside of the area for receiving the wafer. The wafer stage further includes a second sensor outside of the area of receiving the wafer, wherein the second sensor is spaced from the first sensor. The wafer stage further includes a first particle capture area outside of the area for receiving the wafer, wherein the first particle capture area is spaced from both the first sensor and the second sensor, a dimension of the first particle capture area in a first direction parallel to a top surface of the wafer stage is at least 26 millimeters (mm), a dimension of the first particle capture area in a second direction parallel to the top surface of the wafer stage is at least 33 mm, and the second direction is perpendicular to the first direction.

Abstract: An immersion lithography system includes an immersion hood, wherein the immersion hood includes a lens system. The immersion lithography system further includes a wafer stage, wherein the wafer stage is moveable relative to the immersion hood, and the wafer stage includes an area for receiving a wafer. The immersion lithography system further includes a first particle capture area on the wafer stage outside of the area for receiving the wafer, wherein the first particle capture area includes silicon, silicon nitride oxide or a photoresist material.

Abstract: An immersion lithography system includes an immersion hood, wherein the immersion hood includes a lens system. The immersion lithography system further includes a wafer stage, wherein the wafer stage is moveable relative to the immersion hood, and the wafer stage includes an area for receiving a wafer. The immersion lithography system further includes a first particle capture area on the wafer stage outside of the area for receiving the wafer, wherein the first particle capture area includes silicon, silicon nitride oxide or a photoresist material.

Abstract: The present invention provides a memory device including a connector and a flash memory controller. The connector is configured to connect to a first host and a second host. The flash memory controller is configured to select one of the first host and the second host based on a selection signal, and the flash memory controller only processes commands from the selected one of the first host and the second host, and accesses a flash memory module based on the commands.

Abstract: An SSD control system comprising a first control system including a first control device, and comprising a second control system including a second control device. The first control system is coupled to a first SSD group comprising a plurality of first SSDs, and the second control system is coupled to a second SSD group comprising a plurality of second SSDs. The first control device comprises: a first processing circuit, configured to control a first portion of the first SSDs; and a second processing circuit, configured to control a second portion of the first SSDs. The second control device comprises: a first signal repeating device, configured to respectively receive first, second control signals from the first, second processing circuit to control a first, second portion of the second SSDs. The second control system does not comprise any circuit which can generate control signals to control the second SSD group.

Abstract: An SSD comprising: a circuit board; a first storage region, provided on a first side of the circuit board, comprising at least one first memory; a control region, provided on the first side, comprising at least one control IC for controlling the first memory; and first heat sink material, provided on the first storage region or the first control region.

Abstract: A light path adjustment mechanism includes a carrier, an optical plate member, a support, a base, a first pair of transmission mechanical pieces, and a second pair of transmission mechanical pieces. One side of the support is provided with a first actuator, and one side of the base is provided with a second actuator. The first pair of transmission mechanical pieces are connected between the base and the support, and the second pair of transmission mechanical pieces are connected between the carrier and the support. The first pair of transmission mechanical pieces are entirely disposed on only one side of the carrier.

Abstract: The present invention provides a memory device including a connector and a flash memory controller. The connector is configured to connect to a first host and a second host. The flash memory controller is configured to select one of the first host and the second host based on a selection signal, and the flash memory controller only processes commands from the selected one of the first host and the second host, and accesses a flash memory module based on the commands.

Abstract: A light path adjustment mechanism includes a bracket, a light valve, a carrier, a first axis, a second axis and an optical plate member. A surface normal of a surface of the light valve crosses the bracket to define an intersection closest to the surface of the light valve, and the bracket has an end point furthest from the intersection measured in the direction of the surface normal. A distance between the intersection and the surface measured in the direction of the surface normal is smaller than a distance between the intersection and the end point measured in the direction of the surface normal.

Abstract: A method for producing a polyester includes: a) preparing a first monomer represented by Formula (1) for example—bis(?-hydroxyethyl) terephthalate (BHET); and b) preparing a second monomer represented by Formula (2) represented by Formula (2)—2-(2-hydroxyethoxy)ethyl 2-hydroxyethyl terephthalate (BHEET). The prepared first and second monomer are then mixed to form a mixture, and then the mixture is subjected to a pre-polymerization reaction at a first temperature not higher than 230° C. to form a prepolymer while a glycol compound represented by Formula (3) wherein R independently represents hydrogen, a C1-C6 linear or branched alkyl group, or phenyl; is continuously removed by distillation. The method also includes subjecting the prepolymer to a polymerization reaction at a second temperature higher than the first temperature to obtain the polyester.

Abstract: A liquid sample carrier includes a first base that includes a first carrying portion having a first sample holding surface, and a second base that is connectable to the first base and that includes a second carrying portion, a support layer, and a second sample holding surface. The second carrying portion is stackable on the first carrying portion, and has a surrounding wall defining a through hole. The support layer is connected to the second carrying portion and has a window area corresponding to the through hole, and a peripheral area surrounding the window area. The second sample holding surface is connected to the support layer. A sample receiving area is formed between the first and second sample holding surfaces.

Abstract: A method for preparing a stabilizer containing phosphate ester, including following steps: (1) distributing a compound containing phosphorous and oxide in polar aprotic solvent to obtain a mixture; (2) adding bis(2-hydroxyethyl) terephthalate (BHET) into the mixture to carry out a reaction so as to obtain a solution; and (3) hydrolyzing the solution to obtain a stabilizer containing phosphate ester, where the stabilizer includes compounds represented by the following formulas (I) and (II): where X1, X2 and X3 are independently selected from the moiety represented by following formula (III), and R1 and R2 are independently selected from one of the linear or branched alkylene radicals comprising 2 to 4 carbon atoms The method yields a phosphate ester containing a phosphate monoester and a phosphate diester of a high content and only a minor amount of phosphoric acid in the absence of phosphate triester without the step of extraction.

Abstract: A method for producing a polyester includes: a) subjecting a mixture which includes a major amount of a first monomer and a minor amount of a second monomer to a pre-polymerization reaction at a first temperature for a period of reaction time such that a prepolymer is formed while a glycol compound is continuously removed by distillation; and b) subjecting the prepolymer to a polymerization reaction at a second temperature higher than the first temperature to obtain the polyester.