Patents by Inventor Chih-Chien Wang

Chih-Chien Wang has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Publication number: 20250069881
    Abstract: Embodiments are directed to a method for minimizing electrostatic charges in a semiconductor substrate. The method includes depositing photoresist on a semiconductor substrate to form a photoresist layer on the semiconductor substrate. The photoresist layer is exposed to radiation. The photoresist layer is developed using a developer solution. The semiconductor substrate is cleaned with a first cleaning liquid to wash the developer solution from the photoresist layer. A tetramethylammonium hydroxide (TMAH) solution is applied to the semiconductor substrate to reduce charges accumulated in the semiconductor substrate.
    Type: Application
    Filed: November 7, 2024
    Publication date: February 27, 2025
    Applicant: Taiwan Semiconductor Manufacturing Company, Ltd.
    Inventors: Wei-Lin CHANG, Chih-Chien WANG, Chihy-Yuan CHENG, Sz-Fan CHEN, Chien-Hung LIN, Chun-Chang CHEN, Ching-Sen KUO, Feng-Jia SHIU
  • Patent number: 12165867
    Abstract: Embodiments are directed to a method for minimizing electrostatic charges in a semiconductor substrate. The method includes depositing photoresist on a semiconductor substrate to form a photoresist layer on the semiconductor substrate. The photoresist layer is exposed to radiation. The photoresist layer is developed using a developer solution. The semiconductor substrate is cleaned with a first cleaning liquid to wash the developer solution from the photoresist layer. A tetramethylammonium hydroxide (TMAH) solution is applied to the semiconductor substrate to reduce charges accumulated in the semiconductor substrate.
    Type: Grant
    Filed: July 24, 2023
    Date of Patent: December 10, 2024
    Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.
    Inventors: Wei-Lin Chang, Chih-Chien Wang, Chihy-Yuan Cheng, Sz-Fan Chen, Chien-Hung Lin, Chun-Chang Chen, Ching-Sen Kuo, Feng-Jia Shiu
  • Publication number: 20230386820
    Abstract: Embodiments are directed to a method for minimizing electrostatic charges in a semiconductor substrate. The method includes depositing photoresist on a semiconductor substrate to form a photoresist layer on the semiconductor substrate. The photoresist layer is exposed to radiation. The photoresist layer is developed using a developer solution. The semiconductor substrate is cleaned with a first cleaning liquid to wash the developer solution from the photoresist layer. A tetramethylammonium hydroxide (TMAH) solution is applied to the semiconductor substrate to reduce charges accumulated in the semiconductor substrate.
    Type: Application
    Filed: July 24, 2023
    Publication date: November 30, 2023
    Inventors: Wei-Lin CHANG, Chih-Chien WANG, Chihy-Yuan CHENG, Sz-Fan CHIEN, Chien-Hung LIN, Chun-Chang CHEN, Ching-Sen KUO, Feng-Jia SHIU
  • Patent number: 11769662
    Abstract: Embodiments are directed to a method for minimizing electrostatic charges in a semiconductor substrate. The method includes depositing photoresist on a semiconductor substrate to form a photoresist layer on the semiconductor substrate. The photoresist layer is exposed to radiation. The photoresist layer is developed using a developer solution. The semiconductor substrate is cleaned with a first cleaning liquid to wash the developer solution from the photoresist layer. A tetramethylammonium hydroxide (TMAH) solution is applied to the semiconductor substrate to reduce charges accumulated in the semiconductor substrate.
    Type: Grant
    Filed: March 19, 2021
    Date of Patent: September 26, 2023
    Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.
    Inventors: Wei-Lin Chang, Chih-Chien Wang, Chihy-Yuan Cheng, Sz-Fan Chen, Chien-Hung Lin, Chun-Chang Chen, Ching-Sen Kuo, Feng-Jia Shiu
  • Patent number: 11529245
    Abstract: A kinematic-axis locating device for knee arthroplasty includes two spoon-shaped arms and a linking piece. The two spoon-shaped arms are to be placed between a proximal tibia and a distal femur. Due to checking effects of ligaments on the proximal tibia and the distal femur, a medial condyle femur and a lateral condyle femur hold the two spoon-shaped arms on the tibial plateau using their respective curvatures. The linking piece provides a reference axis that is naturally defined by the two inserted and positioned spoon-shaped arms. The reference axis is roughly parallel to a kinematic axis upon which the medial condyle and the lateral condyle pivot against the tibial plateau. Articular surface resection can then be performed between the proximal tibia and the distal femur with reference to the reference axis.
    Type: Grant
    Filed: September 29, 2020
    Date of Patent: December 20, 2022
    Inventor: Chih-Chien Wang
  • Publication number: 20220301849
    Abstract: Embodiments are directed to a method for minimizing electrostatic charges in a semiconductor substrate. The method includes depositing photoresist on a semiconductor substrate to form a photoresist layer on the semiconductor substrate. The photoresist layer is exposed to radiation. The photoresist layer is developed using a developer solution. The semiconductor substrate is cleaned with a first cleaning liquid to wash the developer solution from the photoresist layer. A tetramethylammonium hydroxide (TMAH) solution is applied to the semiconductor substrate to reduce charges accumulated in the semiconductor substrate.
    Type: Application
    Filed: March 19, 2021
    Publication date: September 22, 2022
    Inventors: Wei-Lin CHANG, Chih-Chien WANG, Chihy-Yuan CHENG, Sz-Fan CHEN, Chien-Hung LIN, Chun-Chang CHEN, Ching-Sen KUO, Feng-Jia SHIU
  • Publication number: 20220096247
    Abstract: A kinematic-axis locating device for knee arthroplasty includes two spoon-shaped arms and a linking piece. The two spoon-shaped arms are to be placed between a proximal tibia and a distal femur. Due to checking effects of ligaments on the proximal tibia and the distal femur, a medial condyle femur and a lateral condyle femur hold the two spoon-shaped arms on the tibial plateau using their respective curvatures. The linking piece provides a reference axis that is naturally defined by the two inserted and positioned spoon-shaped arms. The reference axis is roughly parallel to a kinematic axis upon which the medial condyle and the lateral condyle pivot against the tibial plateau. Articular surface resection can then be performed between the proximal tibia and the distal femur with reference to the reference axis.
    Type: Application
    Filed: September 29, 2020
    Publication date: March 31, 2022
    Inventor: CHIH-CHIEN WANG
  • Publication number: 20220047560
    Abstract: A solid dosage form comprises an inner core containing a cycloserine compound and an outer layer attached to the inner core. The dosage form can be enteric tablet or transdermal patch, suitable for treating a neuropsychiatric disorder or tuberculosis.
    Type: Application
    Filed: September 12, 2019
    Publication date: February 17, 2022
    Applicant: SyneuRx International (Taiwan) Corp.
    Inventors: Guochuan Emil Tsai, Chih-Chien Wang, Hsin-Hsin Yang, Hsuan-Ang Tsai
  • Patent number: 11086221
    Abstract: A first photoresist pattern and a second photoresist pattern are formed over a substrate. The first photoresist pattern is separated from the second photoresist pattern by a gap. A chemical mixture is coated on the first and second photoresist patterns. The chemical mixture contains a chemical material and surfactant particles mixed into the chemical material. The chemical mixture fills the gap. A baking process is performed on the first and second photoresist patterns, the baking process causing the gap to shrink. At least some surfactant particles are disposed at sidewall boundaries of the gap. A developing process is performed on the first and second photoresist patterns. The developing process removes the chemical mixture in the gap and over the photoresist patterns. The surfactant particles disposed at sidewall boundaries of the gap reduce a capillary effect during the developing process.
    Type: Grant
    Filed: August 3, 2020
    Date of Patent: August 10, 2021
    Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.
    Inventors: Wei-Chao Chiu, Chih-Chien Wang, Feng-Jia Shiu, Ching-Sen Kuo, Chun-Wei Chang, Kai Tzeng
  • Publication number: 20200365645
    Abstract: A first photoresist pattern and a second photoresist pattern are formed over a substrate. The first photoresist pattern is separated from the second photoresist pattern by a gap. A chemical mixture is coated on the first and second photoresist patterns. The chemical mixture contains a chemical material and surfactant particles mixed into the chemical material. The chemical mixture fills the gap. A baking process is performed on the first and second photoresist patterns, the baking process causing the gap to shrink. At least some surfactant particles are disposed at sidewall boundaries of the gap. A developing process is performed on the first and second photoresist patterns. The developing process removes the chemical mixture in the gap and over the photoresist patterns. The surfactant particles disposed at sidewall boundaries of the gap reduce a capillary effect during the developing process.
    Type: Application
    Filed: August 3, 2020
    Publication date: November 19, 2020
    Inventors: Wei-Chao Chiu, Chih-Chien Wang, Feng-Jia Shiu, Ching-Sen Kuo, Chun-Wei Chang, Kai Tzeng
  • Patent number: 10734436
    Abstract: A first photoresist pattern and a second photoresist pattern are formed over a substrate. The first photoresist pattern is separated from the second photoresist pattern by a gap. A chemical mixture is coated on the first and second photoresist patterns. The chemical mixture contains a chemical material and surfactant particles mixed into the chemical material. The chemical mixture fills the gap. A baking process is performed on the first and second photoresist patterns, the baking process causing the gap to shrink. At least some surfactant particles are disposed at sidewall boundaries of the gap. A developing process is performed on the first and second photoresist patterns. The developing process removes the chemical mixture in the gap and over the photoresist patterns. The surfactant particles disposed at sidewall boundaries of the gap reduce a capillary effect during the developing process.
    Type: Grant
    Filed: September 26, 2018
    Date of Patent: August 4, 2020
    Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.
    Inventors: Wei-Chao Chiu, Chih-Chien Wang, Feng-Jia Shiu, Ching-Sen Kuo, Chun-Wei Chang, Kai Tzeng
  • Patent number: 10546889
    Abstract: Implementations of the disclosure provide a method of fabricating an image sensor device. The method includes forming first trenches in a first photoresist layer using a first photomask having a first pattern to expose a first surface of a substrate, directing ions into the exposed first substrate through the first trenches to form first isolation regions in the substrate, removing the first photoresist layer, forming second trenches in a second photoresist layer using a second photomask having a second pattern to expose a second surface of the substrate, the second pattern being shifted diagonally from the first pattern by half mask pitch, directing ions into the exposed second surface through the second trenches to form second isolation regions in the substrate, the first and second isolation regions being alternatingly disposed in the substrate, and the first and second isolation regions defining pixel regions therebetween, and removing the second photoresist layer.
    Type: Grant
    Filed: November 5, 2018
    Date of Patent: January 28, 2020
    Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.
    Inventors: Wei-Chao Chiu, Chih-Chien Wang, Feng-Jia Shiu, Ching-Sen Kuo, Chun-Wei Chang, Kai Tzeng
  • Publication number: 20190088694
    Abstract: Implementations of the disclosure provide a method of fabricating an image sensor device. The method includes forming first trenches in a first photoresist layer using a first photomask having a first pattern to expose a first surface of a substrate, directing ions into the exposed first substrate through the first trenches to form first isolation regions in the substrate, removing the first photoresist layer, forming second trenches in a second photoresist layer using a second photomask having a second pattern to expose a second surface of the substrate, the second pattern being shifted diagonally from the first pattern by half mask pitch, directing ions into the exposed second surface through the second trenches to form second isolation regions in the substrate, the first and second isolation regions being alternatingly disposed in the substrate, and the first and second isolation regions defining pixel regions therebetween, and removing the second photoresist layer.
    Type: Application
    Filed: November 5, 2018
    Publication date: March 21, 2019
    Inventors: Wei-Chao CHIU, Chih-Chien WANG, Feng-Jia SHIU, Ching-Sen KUO, Chun-Wei CHANG, Kai TZENG
  • Publication number: 20190027530
    Abstract: A first photoresist pattern and a second photoresist pattern are formed over a substrate. The first photoresist pattern is separated from the second photoresist pattern by a gap. A chemical mixture is coated on the first and second photoresist patterns. The chemical mixture contains a chemical material and surfactant particles mixed into the chemical material. The chemical mixture fills the gap. A baking process is performed on the first and second photoresist patterns, the baking process causing the gap to shrink. At least some surfactant particles are disposed at sidewall boundaries of the gap. A developing process is performed on the first and second photoresist patterns. The developing process removes the chemical mixture in the gap and over the photoresist patterns. The surfactant particles disposed at sidewall boundaries of the gap reduce a capillary effect during the developing process.
    Type: Application
    Filed: September 26, 2018
    Publication date: January 24, 2019
    Inventors: Wei-Chao Chiu, Chih-Chien Wang, Feng-Jia Shiu, Ching-Sen Kuo, Chun-Wei Chang, Kai Tzeng
  • Publication number: 20190027519
    Abstract: Various examples of a technique for forming a pattern for substrate fabrication are disclosed herein. In an example, a method includes receiving a substrate. A patterned resist is formed on the substrate and has a trench defined therein. A dielectric is deposited on the patterned resist and within the trench such that the dielectric narrows a width of the trench to further define the trench. A fabrication process is performed on a region of the substrate underlying the trench defined by the dielectric.
    Type: Application
    Filed: July 18, 2017
    Publication date: January 24, 2019
    Inventors: Wei-Chao Chiu, Kai Tzeng, Chih-Chien Wang, Chun-Wei Chang, Ching-Sen Kuo, Feng-Jia Shiu, Cheng-Ta Wu
  • Patent number: 10186542
    Abstract: Various examples of a technique for forming a pattern for substrate fabrication are disclosed herein. In an example, a method includes receiving a substrate. A patterned resist is formed on the substrate and has a trench defined therein. A dielectric is deposited on the patterned resist and within the trench such that the dielectric narrows a width of the trench to further define the trench. A fabrication process is performed on a region of the substrate underlying the trench defined by the dielectric.
    Type: Grant
    Filed: July 18, 2017
    Date of Patent: January 22, 2019
    Assignee: Taiwan Semiconductor Manufacturing Co., Ltd.
    Inventors: Wei-Chao Chiu, Kai Tzeng, Chih-Chien Wang, Chun-Wei Chang, Ching-Sen Kuo, Feng-Jia Shiu, Cheng-Ta Wu
  • Patent number: 10121811
    Abstract: Implementations of the disclosure provide a method of fabricating an image sensor device. The method includes forming first trenches in a first photoresist layer using a first photomask having a first pattern to expose a first surface of a substrate, directing ions into the exposed first substrate through the first trenches to form first isolation regions in the substrate, removing the first photoresist layer, forming second trenches in a second photoresist layer using a second photomask having a second pattern to expose a second surface of the substrate, the second pattern being shifted diagonally from the first pattern by half mask pitch, directing ions into the exposed second surface through the second trenches to form second isolation regions in the substrate, the first and second isolation regions being alternatingly disposed in the substrate, and the first and second isolation regions defining pixel regions therebetween, and removing the second photoresist layer.
    Type: Grant
    Filed: August 25, 2017
    Date of Patent: November 6, 2018
    Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.
    Inventors: Wei-Chao Chiu, Chih-Chien Wang, Feng-Jia Shiu, Ching-Sen Kuo, Chun-Wei Chang, Kai Tzeng
  • Patent number: 10090357
    Abstract: A first photoresist pattern and a second photoresist pattern are formed over a substrate. The first photoresist pattern is separated from the second photoresist pattern by a gap. A chemical mixture is coated on the first and second photoresist patterns. The chemical mixture contains a chemical material and surfactant particles mixed into the chemical material. The chemical mixture fills the gap. A baking process is performed on the first and second photoresist patterns, the baking process causing the gap to shrink. At least some surfactant particles are disposed at sidewall boundaries of the gap. A developing process is performed on the first and second photoresist patterns. The developing process removes the chemical mixture in the gap and over the photoresist patterns. The surfactant particles disposed at sidewall boundaries of the gap reduce a capillary effect during the developing process.
    Type: Grant
    Filed: March 7, 2016
    Date of Patent: October 2, 2018
    Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.
    Inventors: Wei-Chao Chiu, Chih-Chien Wang, Feng-Jia Shiu, Ching-Sen Kuo, Chun-Wei Chang, Kai Tzeng
  • Patent number: 9875892
    Abstract: A method for forming a photoresist layer on a semiconductor device is disclosed. An exemplary includes providing a wafer. The method further includes spinning the wafer during a first cycle at a first speed, while a pre-wet material is dispensed over the wafer and spinning the wafer during the first cycle at a second speed, while the pre-wet material continues to be dispensed over the wafer. The method further includes spinning the wafer during a second cycle at the first speed, while the pre-wet material continues to be dispensed over the wafer and spinning the wafer during the second cycle at the second speed, while the pre-wet material continues to be dispensed over the wafer. The method further includes spinning the wafer at a third speed, while a photoresist material is dispensed over the wafer including the pre-wet material.
    Type: Grant
    Filed: May 8, 2015
    Date of Patent: January 23, 2018
    Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.
    Inventors: Chun-Wei Chang, Chih-Chien Wang, Wang-Pen Mo, Hung-Chang Hsieh
  • Patent number: 9791775
    Abstract: A method includes forming a first photo resist layer over a base structure and a target feature over the base structure, performing an un-patterned exposure on the first photo resist layer, and developing the first photo resist layer. After the step of developing, a corner portion of the first photo resist layer remains at a corner between a top surface of the base structure and an edge of the target feature. A second photo resist layer is formed over the target feature, the base structure, and the corner portion of the first photo resist layer. The second photo resist layer is exposed using a patterned lithography mask. The second photo resist layer is patterned to form a patterned photo resist.
    Type: Grant
    Filed: March 11, 2016
    Date of Patent: October 17, 2017
    Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.
    Inventors: Chun-Wei Chang, Hong-Da Lin, Chih-Chien Wang, Chun-Chang Chen, Wang-Pen Mo, Hung-Chang Hsieh