Abstract: A semiconductor device structure and a method for forming a semiconductor device structure are provided. The semiconductor device structure includes a stack of channel structures over a base structure. The semiconductor device structure also includes a first epitaxial structure and a second epitaxial structure sandwiching the channel structures. The semiconductor device structure further includes a gate stack wrapped around each of the channel structures and a backside conductive contact connected to the second epitaxial structure. A first portion of the backside conductive contact is directly below the base structure, and a second portion of the backside conductive contact extends upwards to approach a bottom surface of the second epitaxial structure. In addition, the semiconductor device structure includes an insulating spacer between a sidewall of the base structure and the backside conductive contact.

Abstract: A semiconductor device with dual side source/drain (S/D) contact structures and a method of fabricating the same are disclosed. The method includes forming a fin structure on a substrate, forming a superlattice structure on the fin structure, forming first and second S/D regions within the superlattice structure, forming a gate structure between the first and second S/D regions, forming first and second contact structures on first surfaces of the first and second S/D regions, and forming a third contact structure, on a second surface of the first S/D region, with a work function metal (WFM) silicide layer and a dual metal liner. The second surface is opposite to the first surface of the first S/D region and the WFM silicide layer has a work function value closer to a conduction band energy than a valence band energy of a material of the first S/D region.

Abstract: A semiconductor device structure includes a source/drain feature comprising a first surface, a second surface opposing the first surface, and a sidewall connecting the first surface to the second surface. The structure also includes a dielectric layer having a continuous surface in contact with the entire second surface of the source/drain feature, a semiconductor layer having a first surface, a second surface opposing the first surface, and a sidewall connecting the first surface to the second surface, wherein the sidewall of the semiconductor layer is in contact with the sidewall of the source/drain feature. The structure also includes a gate dielectric layer in contact with the continuous surface of the dielectric layer and the second surface of the semiconductor layer, and a gate electrode layer surrounding a portion of the semiconductor layer.

Abstract: Disclosed is a thermal conduction-electrical conduction isolated circuit board with a ceramic substrate and a power transistor embedded, mainly comprising: a dielectric material layer, a heat-dissipating ceramic block, a securing portion, a stepped metal electrode layer, a power transistor, and a dielectric material packaging, wherein a via hole is formed in the dielectric material layer, the heat-dissipating ceramic block is correspondingly embedded in the via hole, the heat-dissipating ceramic block has a thermal conductivity higher than that of the dielectric material layer and a thickness less than that of the dielectric material layer, the stepped metal electrode layer conducts electricity and heat for the power transistor, the dielectric material packaging is configured to partially expose the source connecting pin, drain connecting pin, and gate connecting pin of the encapsulated stepped metal electrode layer.

Abstract: A wireless communication device includes a transceiver and processing circuitry. The transceiver is configured to establish a telecommunication connection to a network server. The processing circuitry is coupled to the transceiver. The processing circuitry is configured to monitor application programs executed by the processing circuitry. One of the application programs is executed as a foreground application. The processing circuitry is further configured to compare connection parameters of the telecommunication connection established by the transceiver with a connection standard. In response to the foreground application currently communicating with the network server through the telecommunication connection and the connection parameters being lower than the connection standard, the processing circuitry is further configured to limit performance of the processing circuitry, or change a mobile network protocol utilized the transceiver to establish the telecommunication connection.

Abstract: A wireless communication device includes a transceiver and processing circuitry. The transceiver is configured to establish a telecommunication connection to a network server. The processing circuitry is coupled to the transceiver. The processing circuitry is configured to monitor application programs executed by the processing circuitry. One of the application programs is executed as a foreground application. The processing circuitry is further configured to compare connection parameters of the telecommunication connection established by the transceiver with a connection standard. In response to the foreground application currently communicating with the network server through the telecommunication connection and the connection parameters being, lower than the connection standard, the processing, circuitry is further configured to limit performance of the processing circuitry, or change a mobile network protocol utilized the transceiver to establish the telecommunication connection.