Abstract: Some implementations described herein include operating components in a lithography system at variable speeds to reduce, minimize, and/or prevent particle generation due to rubbing of or collision between contact parts of the components. In some implementations, a component in a path of transfer of a semiconductor substrate in the lithography system is operated at a relatively high movement speed through a first portion of an actuation operation, and is operated at a reduced movement speed (e.g., a movement speed that is less than the high movement speed) through a second portion of the actuation operation in which contact parts of the component are to interact. The reduced movement speed reduces the likelihood of particle generation and/or release from the contact parts when the contact parts interact, while the high movement speed provides a high semiconductor substrate throughput in the lithography system.

Abstract: Some implementations described herein include operating components in a lithography system at variable speeds to reduce, minimize, and/or prevent particle generation due to rubbing of or collision between contact parts of the components. In some implementations, a component in a path of transfer of a semiconductor substrate in the lithography system is operated at a relatively high movement speed through a first portion of an actuation operation, and is operated at a reduced movement speed (e.g., a movement speed that is less than the high movement speed) through a second portion of the actuation operation in which contact parts of the component are to interact. The reduced movement speed reduces the likelihood of particle generation and/or release from the contact parts when the contact parts interact, while the high movement speed provides a high semiconductor substrate throughput in the lithography system.

Abstract: The immersion cooling apparatus includes a cooling tank having a cooling liquid; a cable having a first end and a second end and a protection tube wrapping the cable. The first end connects a first connector, and the second end connects a second connector. At least one of the first end and the second end is located in the cooling tank. The protection tube is configured to separate the cable and the cooling liquid, and the protection tube includes at least one of a hard tube, a soft tube, or a thermal shrinking tube.

Abstract: This is a type of pluggable optoelectronic transceiver that operates while immersed in cooling fluid for data transmission. The pluggable optoelectronic transceiver consists of an optical module, fluid separating colloid, and colloid separating cover. The fluid separating colloid serves to keep the cooling fluid separate from the optical module, while the colloid separating cover further ensures separation between the fluid separating colloid and the optical module. This design prevents the cooling fluid and the fluid separating colloid from infiltrating the optical module and affecting its operation.

Abstract: This is a type of pluggable optoelectronic transceiver that operates while immersed in cooling fluid for data transmission. The pluggable optoelectronic transceiver consists of an optical module, fluid separating colloid, and colloid separating cover. The fluid separating colloid serves to keep the cooling fluid separate from the optical module, while the colloid separating cover further ensures separation between the fluid separating colloid and the optical module. This design prevents the cooling fluid and the fluid separating colloid from infiltrating the optical module and affecting its operation.

Abstract: The immersion cooling apparatus includes a cooling tank having a cooling liquid; a cable having a first end and a second end and a protection tube wrapping the cable. The first end connects a first connector, and the second end connects a second connector. At least one of the first end and the second end is located in the cooling tank. The protection tube is configured to separate the cable and the cooling liquid, and the protection tube includes at least one of a hard tube, a soft tube, or a thermal shrinking tube.

Abstract: Some implementations described herein include operating components in a lithography system at variable speeds to reduce, minimize, and/or prevent particle generation due to rubbing of or collision between contact parts of the components. In some implementations, a component in a path of transfer of a semiconductor substrate in the lithography system is operated at a relatively high movement speed through a first portion of an actuation operation, and is operated at a reduced movement speed (e.g., a movement speed that is less than the high movement speed) through a second portion of the actuation operation in which contact parts of the component are to interact. The reduced movement speed reduces the likelihood of particle generation and/or release from the contact parts when the contact parts interact, while the high movement speed provides a high semiconductor substrate throughput in the lithography system.

Abstract: Some implementations described herein include operating components in a lithography system at variable speeds to reduce, minimize, and/or prevent particle generation due to rubbing of or collision between contact parts of the components. In some implementations, a component in a path of transfer of a semiconductor substrate in the lithography system is operated at a relatively high movement speed through a first portion of an actuation operation, and is operated at a reduced movement speed (e.g., a movement speed that is less than the high movement speed) through a second portion of the actuation operation in which contact parts of the component are to interact. The reduced movement speed reduces the likelihood of particle generation and/or release from the contact parts when the contact parts interact, while the high movement speed provides a high semiconductor substrate throughput in the lithography system.

Abstract: Some implementations described herein include operating components in a lithography system at variable speeds to reduce, minimize, and/or prevent particle generation due to rubbing of or collision between contact parts of the components. In some implementations, a component in a path of transfer of a semiconductor substrate in the lithography system is operated at a relatively high movement speed through a first portion of an actuation operation, and is operated at a reduced movement speed (e.g., a movement speed that is less than the high movement speed) through a second portion of the actuation operation in which contact parts of the component are to interact. The reduced movement speed reduces the likelihood of particle generation and/or release from the contact parts when the contact parts interact, while the high movement speed provides a high semiconductor substrate throughput in the lithography system.

Abstract: The present disclosure illustrates a composition of a visible light and infrared light transmitting optical colored glass. The chalcogenide semiconductor compound Cu2ZnSnS4 or Cu2ZnSnSe4 is added in the silicate glass system composition, to adjust color and the optical property of the glass. The glass made of this composition has a characteristic of the visible light and infrared light transmitting in a wavelength of range 400 nm to 1200 nm.

Abstract: The present disclosure illustrates a composition of a visible light and infrared light transmitting optical colored glass. The chalcogenide semiconductor compound Cu2ZnSnS4 or Cu2ZnSnSe4 is added in the silicate glass system composition, to adjust color and the optical property of the glass. The glass made of this composition has a characteristic of the visible light and infrared light transmitting in a wavelength of range 400 nm to 1200 nm.