Abstract: Disclosed are an image display method and a 3d display system. The method is adapted to the 3d display system including a 3d display device and includes the following steps. A first image and a second image are obtained by splitting an input image according to a 3d image format. Whether the input image is a 3D format image complying with the 3D image format is determined through a stereo matching processing performed on the first image and the second image. An image interweaving process is enabled to be performed on the input image to generate an interweaving image in response to determining that the input image is the 3D format image complying with the 3D image format, and the interweaving image is displayed via the 3D display device.

Abstract: A method for predicting clinical severity of a neurological disorder includes steps of: a) identifying, according to a magnetic resonance imaging (MRI) image of a brain, brain image regions each of which contains a respective portion of diffusion index values of a diffusion index, which results from image processing performed on the MRI image; b) for one of the brain image regions, calculating a characteristic parameter based on the respective portion of the diffusion index values; and c) calculating a severity score that represents the clinical severity of the neurological disorder of the brain based on the characteristic parameter of the one of the brain image regions via a prediction model associated with the neurological disorder.

Abstract: A method of forming a semiconductor device includes providing a substrate including a circuit region and a well strap region, forming a mandrel extending from the circuit region to the well strap region, depositing mandrel spacers on sidewalls of the mandrel, removing the mandrel in the circuit region, while the mandrel in the well strap region remains intact, patterning the substrate with the mandrel spacers in the circuit region and the mandrel in the well strap region as an etch mask, thereby forming at least a first fin in the circuit region and a second fin in the well strap region, and epitaxially growing a first epitaxial feature over the first fin in the circuit region and a second epitaxial feature over the second fin in the well strap region. A width of the second fin is larger than a width of the first fin.

Abstract: An IC device includes first through third rows of fin field-effect transistors (FinFETs), wherein the second row is between and adjacent to each of the first and third rows, the FinFETs of the first row are one of an n-type or p-type, the FinFETs of the second and third rows are the other of the n-type or p-type, the FinFETs of the first and third rows include a first total number of fins, and the FinFETs of the second row include a second total number of fins one greater or fewer than the first total number of fins.

Abstract: An anti-peep light source module includes a light source module and a viewing angle switching module. The light source module has a light source and a light guide plate (LGP) and has light emitting elements arranged along a first direction. The viewing angle switching module is located on a transmission path of an illumination beam of the light source module and includes a viewing angle limiting element and a viewing angle adjusting element configured to change a viewing angle of the illumination beam. The viewing angle limiting element has a grating structure and is located between the viewing angle adjusting element and the light source module. an included angle between an extension direction of the grating structure and the first direction is within a range from 88 degrees to 92 degrees. The anti-peep light source module and A display device achieve favorable optical performance, user experience, and production yield.

Abstract: A semiconductor package assembly is provided. The semiconductor package assembly includes a base, a first system-on-chip (SOC) die, a conductive routing and a first shielding film. The first SOC die is disposed on the base. The first SOC die has a front surface and a back surface. The first SOC die includes a first inductor close to the front surface. The conductive routing is disposed on the back surface of the first SOC die. The first shielding film is disposed between the first SOC die and the conductive routing. The first shielding film covers the back surface of the first SOC die and fully overlaps the first inductor.

Abstract: A semiconductor package structure is provided. The semiconductor package structure includes a package substrate. An integrated circuit (IC) die having a radio frequency (RF) circuit and a memory die are stacked over the package substrate. The memory die entirely covers a first surface portion of the package substrate to define a second surface portion of the package substrate exposed from the memory die, and the IC die partially covers the first surface portion and the second surface portion of the package substrate. The RF circuit includes a first sensitive device region corresponding to the second surface portion of the package substrate and a second sensitive device region corresponding to the first surface portion of the package substrate and offsetting a memory input/output (I/O) electrical path of the memory die, as viewed from a top-view perspective.

Abstract: A semiconductor package is provided. The semiconductor package includes a package substrate having a first region and a second region defined between an edge of the package substrate and an edge of the first region, a semiconductor die disposed on the package substrate in the first region, a conductive shielding element disposed on the package substrate and covering the semiconductor die, and a three-dimensional (3D) antenna. The 3D antenna includes a planar structure portion disposed on the package substrate in the second region, and a bridge structure portion above the planar structure portion and connected thereto.

Abstract: An integrated circuit apparatus includes a substrate, an IC chip disposed above the substrate, and an electromagnetic shielding layer disposed on a surface of the substrate. The IC chip includes an electromagnetic coupling device. The electromagnetic shielding layer and the electromagnetic coupling device partially overlap in a vertical projection direction of the surface of the substrate.

Abstract: A semiconductor package is provided. The semiconductor package includes a package substrate having a first region and a second region defined between an edge of the package substrate and an edge of the first region, a semiconductor die disposed on the package substrate in the first region, a conductive shielding element disposed on the package substrate and covering the semiconductor die, and a three-dimensional (3D) antenna. The 3D antenna includes a planar structure portion disposed on the package substrate in the second region, and a bridge structure portion above the planar structure portion and connected thereto.

Abstract: A semiconductor package structure is provided. The semiconductor package structure includes a package substrate. An integrated circuit (IC) die having a radio frequency (RF) circuit and a memory die are stacked over the package substrate. The memory die entirely covers a first surface portion of the package substrate to define a second surface portion of the package substrate exposed from the memory die, and the IC die partially covers the first surface portion and the second surface portion of the package substrate. The RF circuit includes a first sensitive device region corresponding to the second surface portion of the package substrate and a second sensitive device region corresponding to the first surface portion of the package substrate and offsetting a memory input/output (I/O) electrical path of the memory die, as viewed from a top-view perspective.

Abstract: A semiconductor package is provided. The semiconductor package includes a package substrate having a first region and a second region defined between an edge of the package substrate and an edge of the first region. A semiconductor die is disposed on the package substrate in the first region. A three-dimensional (3D) antenna is disposed on the package substrate in the second region. The 3D antenna includes a planar structure portion and a bridge or wall structure portion. A molding compound encapsulates the semiconductor die and at least a portion of the 3D antenna. A conductive shielding element is inside the molding compound or partially covers the molding compound. A semiconductor package assembly having the semiconductor package is also provided.

Abstract: An integrated circuit apparatus includes a substrate, an IC chip disposed above the substrate, and an electromagnetic shielding layer disposed on a surface of the substrate. The IC chip includes an electromagnetic coupling device. The electromagnetic shielding layer and the electromagnetic coupling device partially overlap in a vertical projection direction of the surface of the substrate.

Abstract: A semiconductor package is provided. The semiconductor package includes a package substrate having a first region and a second region defined between an edge of the package substrate and an edge of the first region. A semiconductor die is disposed on the package substrate in the first region. A three-dimensional (3D) antenna is disposed on the package substrate in the second region. The 3D antenna includes a planar structure portion and a bridge or wall structure portion. A molding compound encapsulates the semiconductor die and at least a portion of the 3D antenna. A conductive shielding element is inside the molding compound or partially covers the molding compound. A semiconductor package assembly having the semiconductor package is also provided.

Abstract: A radiation pattern insulator and an antennae system thereof are proposed. The radiation pattern insulator includes a dielectric substrate and a plurality of radiation pattern insulation elements. The dielectric substrate allocated between a plurality of antennae includes a top surface and a bottom surface, and a normal direction of the dielectric substrate is substantially perpendicular to propagation directions of electromagnetic waves radiated from the antennae. In addition, the radiation pattern insulation elements are allocated on the top surface or the bottom surface of the dielectric substrate, or alternatively, all allocated on the top surface and the bottom surface.

Abstract: Some embodiments of the present disclosure provide an integrated circuit (IC) design method. The method includes (1) receiving a first layout comprising stripe patterns with a first separation and a first width; (2) receiving a second layout comprising stripe patterns with a second width narrower than the first separation, each stripe on the second layout is configured to situate between two adjacent stripes on the first layout when overlaying the first layout and the second layout; (3) performing a separation check by identifying a spacing between a stripe on the second layout and one of the two adjacent stripes on the first layout; and (4) adjusting the spacing between the stripe on the second layout and one of the two adjacent stripes on the first layout when the separation check determining the spacing is greater than a predetermined value.

Abstract: Some embodiments of the present disclosure provide an integrated circuit (IC) design method. The method includes (1) receiving a first layout comprising stripe patterns with a first separation and a first width; (2) receiving a second layout comprising stripe patterns with a second width narrower than the first separation, each stripe on the second layout is configured to situate between two adjacent stripes on the first layout when overlaying the first layout and the second layout; (3) performing a separation check by identifying a spacing between a stripe on the second layout and one of the two adjacent stripes on the first layout; and (4) adjusting the spacing between the stripe on the second layout and one of the two adjacent stripes on the first layout when the separation check determining the spacing is greater than a predetermined value.

Abstract: A method for image sticking inspection of a light-transmissive device is disclosed. The light-transmissive device is responsive to application of a voltage to electrodes thereof to adjust light transmission characteristics. The method includes: providing light for passage through the light-transmissive device; applying a first alternating current (AC) voltage to the electrodes; applying a direct current voltage to the electrodes; and applying a second AC voltage to the electrodes, and measuring intensity of the light passing through the light-transmissive device during application of the second AC voltage.

Abstract: A radiation pattern insulator and an antennae system thereof are proposed. The radiation pattern insulator includes a dielectric substrate and a plurality of radiation pattern insulation elements. The dielectric substrate allocated between a plurality of antennae includes a top surface and a bottom surface, and a normal direction of the dielectric substrate is substantially perpendicular to propagation directions of electromagnetic waves radiated from the antennae. In addition, the radiation pattern insulation elements are allocated on the top surface or the bottom surface of the dielectric substrate, or alternatively, all allocated on the top surface and the bottom surface.

Abstract: A radiation pattern insulator and an antennae system thereof are proposed. The radiation pattern insulator includes a dielectric substrate and a plurality of radiation pattern insulation elements. The dielectric substrate allocated between a plurality of antennae includes a top surface and a bottom surface, and a normal direction of the dielectric substrate is substantially perpendicular to propagation directions of electromagnetic waves radiated from the antennae. In addition, the radiation pattern insulation elements are allocated on the top surface or the bottom surface of the dielectric substrate, or alternatively, all allocated on the top surface and the bottom surface.