Patents by Inventor CHIH CHUN TAI

CHIH CHUN TAI has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Publication number: 20240084787
    Abstract: A concentrated solar power storage system and method convert water into water vapor by the solar thermal energy, and the water vapor further operates a hydroelectric power generation system with a water storage (or an energy storage capsule) through a repeated conversion process.
    Type: Application
    Filed: September 12, 2023
    Publication date: March 14, 2024
    Inventors: LIEN CHUN DING, CHIH CHENG TAI
  • Publication number: 20240088307
    Abstract: A semiconductor package is provided. The semiconductor package includes a heat dissipation substrate including a first conductive through-via embedded therein; a sensor die disposed on the heat dissipation substrate; an insulating encapsulant laterally encapsulating the sensor die; a second conductive through-via penetrating through the insulating encapsulant; and a first redistribution structure and a second redistribution structure disposed on opposite sides of the heat dissipation substrate. The second conductive through-via is in contact with the first conductive through-via. The sensor die is located between the second redistribution structure and the heat dissipation substrate. The second redistribution structure has a window allowing a sensing region of the sensor die receiving light. The first redistribution structure is electrically connected to the sensor die through the first conductive through-via, the second conductive through-via and the second redistribution structure.
    Type: Application
    Filed: November 20, 2023
    Publication date: March 14, 2024
    Applicant: Taiwan Semiconductor Manufacturing Company, Ltd.
    Inventors: Chih-Hsuan Tai, Hao-Yi Tsai, Yu-Chih Huang, Chih-Hao Chang, Chia-Hung Liu, Ban-Li Wu, Ying-Cheng Tseng, Po-Chun Lin
  • Patent number: 11929318
    Abstract: A package structure includes a thermal dissipation structure, a first encapsulant, a die, a through integrated fan-out via (TIV), a second encapsulant, and a redistribution layer (RDL) structure. The thermal dissipation structure includes a substrate and a first conductive pad disposed over the substrate. The first encapsulant laterally encapsulates the thermal dissipation structure. The die is disposed on the thermal dissipation structure. The TIV lands on the first conductive pad of the thermal dissipation structure and is laterally aside the die. The second encapsulant laterally encapsulates the die and the TIV. The RDL structure is disposed on the die and the second encapsulant.
    Type: Grant
    Filed: May 10, 2021
    Date of Patent: March 12, 2024
    Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.
    Inventors: Chih-Hsuan Tai, Hao-Yi Tsai, Tsung-Hsien Chiang, Yu-Chih Huang, Chia-Hung Liu, Ban-Li Wu, Ying-Cheng Tseng, Po-Chun Lin
  • Publication number: 20240068119
    Abstract: A casing structure of electronic device including a metal base plate, a transparent cathodic electrodeposition paints layer, and a transparent paints coating layer is provided. The metal base plate has brushed texture and high gloss surface. The transparent cathodic electrodeposition paints layer is disposed on the base metal base plate. The transparent paints coating layer is disposed on the transparent cathodic electrodeposition paints layer. A manufacturing method of casing structure of electronic device is also provided.
    Type: Application
    Filed: March 2, 2023
    Publication date: February 29, 2024
    Applicant: Acer Incorporated
    Inventors: Tzu-Wei Lin, Chih-Chun Liu, Cheng-Nan Ling, Wen-Chieh Tai
  • Patent number: 9837323
    Abstract: The present disclosure provides a method for forming a semiconductor structure. The method includes providing a semiconductor substrate; forming a first active region, a second active region, a third active region, and a fourth active region in the semiconductor substrate; and forming a middle-voltage P well region (MVPW) in each of the first active region and the second region simultaneously and forming a middle-voltage N well (MVNW) region in each of the third active region and the fourth active region simultaneously.
    Type: Grant
    Filed: June 29, 2016
    Date of Patent: December 5, 2017
    Assignee: SEMICONDUCTOR MANUFACTURING INTERNATIONAL (SHANGHAI) CORPORATION
    Inventors: Chih Chun Tai, Lei Fang, Dae Sub Jung, Gangning Wang, Guangli Yang, Jiao Wang, Hong Sun, Yunpeng Peng
  • Publication number: 20170005094
    Abstract: The present disclosure provides a method for forming a semiconductor structure. The method includes providing a semiconductor substrate; forming a first active region, a second active region, a third active region, and a fourth active region in the semiconductor substrate; and forming a middle-voltage P well region (MVPW) in each of the first active region and the second region simultaneously and forming a middle-voltage N well (MVNW) region in each of the third active region and the fourth active region simultaneously.
    Type: Application
    Filed: June 29, 2016
    Publication date: January 5, 2017
    Inventors: CHIH CHUN TAI, LEI FANG, DAE SUB JUNG, GANGNING WANG, GUANGLI YANG, JIAO WANG, HONG SUN, YUNPENG PENG