Patents by Inventor Chih-Da Lin

Chih-Da Lin has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Patent number: 11961791
    Abstract: A device includes a redistribution line, and a polymer region molded over the redistribution line. The polymer region includes a first flat top surface. A conductive region is disposed in the polymer region and electrically coupled to the redistribution line. The conductive region includes a second flat top surface not higher than the first flat top surface.
    Type: Grant
    Filed: May 18, 2022
    Date of Patent: April 16, 2024
    Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.
    Inventors: Ching-Wen Hsiao, Ming-Da Cheng, Chih-Wei Lin, Chen-Shien Chen, Chih-Hua Chen, Chen-Cheng Kuo
  • Publication number: 20240071954
    Abstract: A memory device including a base semiconductor die, conductive terminals, memory dies, an insulating encapsulation and a buffer cap is provided. The conductive terminals are disposed on a first surface of the base semiconductor die. The memory dies are stacked over a second surface of the base semiconductor die, and the second surface of the base semiconductor die is opposite to the first surface of the base semiconductor die. The insulating encapsulation is disposed on the second surface of the base semiconductor die and laterally encapsulates the memory dies. The buffer cap covers the first surface of the base semiconductor die, sidewalls of the base semiconductor die and sidewalls of the insulating encapsulation. A package structure including the above-mentioned memory device is also provided.
    Type: Application
    Filed: November 9, 2023
    Publication date: February 29, 2024
    Applicant: Taiwan Semiconductor Manufacturing Company, Ltd.
    Inventors: Kai-Ming Chiang, Chao-wei Li, Wei-Lun Tsai, Chia-Min Lin, Yi-Da Tsai, Sheng-Feng Weng, Yu-Hao Chen, Sheng-Hsiang Chiu, Chih-Wei Lin, Ching-Hua Hsieh
  • Publication number: 20240071953
    Abstract: A memory device including a base semiconductor die, conductive terminals, memory dies, an insulating encapsulation and a buffer cap is provided. The conductive terminals are disposed on a first surface of the base semiconductor die. The memory dies are stacked over a second surface of the base semiconductor die, and the second surface of the base semiconductor die is opposite to the first surface of the base semiconductor die. The insulating encapsulation is disposed on the second surface of the base semiconductor die and laterally encapsulates the memory dies. The buffer cap covers the first surface of the base semiconductor die, sidewalls of the base semiconductor die and sidewalls of the insulating encapsulation. A package structure including the above- mentioned memory device is also provided.
    Type: Application
    Filed: November 6, 2023
    Publication date: February 29, 2024
    Applicant: Taiwan Semiconductor Manufacturing Company, Ltd.
    Inventors: Kai-Ming Chiang, Chao-wei Li, Wei-Lun Tsai, Chia-Min Lin, Yi-Da Tsai, Sheng-Feng Weng, Yu-Hao Chen, Sheng-Hsiang Chiu, Chih-Wei Lin, Ching-Hua Hsieh
  • Publication number: 20200165210
    Abstract: A method for preparing azoxystrobin comprises the following steps: (a) mixing methyl (E)-2-[2-(6-chloropyrimidin-4-yloxy)phenyl]-3-methoxyacrylate, 2-cyanophenol, potassium carbonate, and 10-80 mol % of 1-methylpyrrolidine as a catalyst in an aprotic solvent to form a basic mixture, and reacting the basic mixture for 2-5 hrs at a temperature of 60-120° C.; and (b) subjecting the basic mixture after reaction in Step (a) to a first distillation under a reduced pressure of 80-120 torr at 70-80° C., to obtain azoxystrobin.
    Type: Application
    Filed: January 7, 2019
    Publication date: May 28, 2020
    Inventors: Chien-Hsing CHEN, Ming-Fang HSIEH, Chih-Da LIN, Chien-Yu LIU
  • Patent number: 6790977
    Abstract: A process for preparing 3,4-dihydroxybenzonitrile includes the steps of reacting a nitrile compound with an alkali metal halide, followed by treating with an acid.
    Type: Grant
    Filed: July 30, 2002
    Date of Patent: September 14, 2004
    Assignee: Sinon Corporation
    Inventors: Lung-Huang Kuo, Dei-She Ke, Chih-Da Lin, Shyh-Shyan Jwo, Wen-Hsin Chang
  • Publication number: 20040024239
    Abstract: A process for preparing 3,4-dihydroxybenzonitrile includes the steps of reacting a nitrile compound with an alkali metal halide, followed by treating with an acid.
    Type: Application
    Filed: July 30, 2002
    Publication date: February 5, 2004
    Inventors: Lung-Huang Kuo, Dei-She Ke, Chih-Da Lin, Shyh-Shyan Jwo, Wen-Hsin Chang
  • Publication number: 20020123655
    Abstract: A process for preparing alkoxy- and aryloxy-phenols involves the steps of reacting a benzaldehyde derivative with a peracid to form a benzodioxole derivative, removing non-reacted peracid from the reaction mixture, and reacting the benzodioxole derivative in the reaction mixture with a hydrolyzing agent.
    Type: Application
    Filed: February 20, 2001
    Publication date: September 5, 2002
    Applicant: SINON CORPORATION
    Inventors: Lung-Huang Kuo, Chih-Da Lin, Shyh-Shyan Jwo, Li-Ling Lin, Shou-Lun Lee, Shi-Jen Tsai