Patents by Inventor Chih-Da Weng

Chih-Da Weng has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Publication number: 20240071953
    Abstract: A memory device including a base semiconductor die, conductive terminals, memory dies, an insulating encapsulation and a buffer cap is provided. The conductive terminals are disposed on a first surface of the base semiconductor die. The memory dies are stacked over a second surface of the base semiconductor die, and the second surface of the base semiconductor die is opposite to the first surface of the base semiconductor die. The insulating encapsulation is disposed on the second surface of the base semiconductor die and laterally encapsulates the memory dies. The buffer cap covers the first surface of the base semiconductor die, sidewalls of the base semiconductor die and sidewalls of the insulating encapsulation. A package structure including the above- mentioned memory device is also provided.
    Type: Application
    Filed: November 6, 2023
    Publication date: February 29, 2024
    Applicant: Taiwan Semiconductor Manufacturing Company, Ltd.
    Inventors: Kai-Ming Chiang, Chao-wei Li, Wei-Lun Tsai, Chia-Min Lin, Yi-Da Tsai, Sheng-Feng Weng, Yu-Hao Chen, Sheng-Hsiang Chiu, Chih-Wei Lin, Ching-Hua Hsieh
  • Publication number: 20240071954
    Abstract: A memory device including a base semiconductor die, conductive terminals, memory dies, an insulating encapsulation and a buffer cap is provided. The conductive terminals are disposed on a first surface of the base semiconductor die. The memory dies are stacked over a second surface of the base semiconductor die, and the second surface of the base semiconductor die is opposite to the first surface of the base semiconductor die. The insulating encapsulation is disposed on the second surface of the base semiconductor die and laterally encapsulates the memory dies. The buffer cap covers the first surface of the base semiconductor die, sidewalls of the base semiconductor die and sidewalls of the insulating encapsulation. A package structure including the above-mentioned memory device is also provided.
    Type: Application
    Filed: November 9, 2023
    Publication date: February 29, 2024
    Applicant: Taiwan Semiconductor Manufacturing Company, Ltd.
    Inventors: Kai-Ming Chiang, Chao-wei Li, Wei-Lun Tsai, Chia-Min Lin, Yi-Da Tsai, Sheng-Feng Weng, Yu-Hao Chen, Sheng-Hsiang Chiu, Chih-Wei Lin, Ching-Hua Hsieh
  • Patent number: 7359382
    Abstract: A method of detecting the type of network address translator utilizes the SIP standard structure and protocol between a user agent and a call manager; wherein after receiving a request message sent from the user agent, the call manager uses different step to reply, and then detects the network type of NAT according to the reply message sent by the user agent.
    Type: Grant
    Filed: May 18, 2004
    Date of Patent: April 15, 2008
    Assignee: Institute For Information Industry
    Inventors: Chung-Fan Liu, Chih-Da Weng
  • Publication number: 20050105525
    Abstract: A method of detecting the type of network address translator utilizes the SIP standard structure and protocol between a user agent and a call manager; wherein after receiving a request message sent from the user agent, the call manager uses different step to reply, and then detects the network type of NAT according to the reply message sent by the user agent.
    Type: Application
    Filed: May 18, 2004
    Publication date: May 19, 2005
    Applicant: Institute For Information Industry
    Inventors: Chung-Fan Liu, Chih-Da Weng