Patents by Inventor Chih-Fan Hu
Chih-Fan Hu has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Publication number: 20230031112Abstract: There is provided a far infrared (FIR) sensor device including a substrate, a thermopile structure and a heat absorption layer. The thermopile structure is arranged on the substrate. The heat absorption layer covers upon the thermopile structure, wherein the heat absorption layer has a hollow space which is formed by etching a metal layer in the heat absorption layer.Type: ApplicationFiled: May 9, 2022Publication date: February 2, 2023Inventors: Ming-Han TSAI, Chih-Fan HU
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Publication number: 20220364927Abstract: The present invention provides a far infrared (FIR) sensor device formed on a substrate, wherein the FIR sensor device includes: a sensor region, which is formed on the substrate, and is configured to operably sense a far infrared signal; and a sensor dielectric layer, which is formed on the sensor region, wherein a thickness of the sensor dielectric layer is determined by a sacrificial metal layer.Type: ApplicationFiled: February 21, 2022Publication date: November 17, 2022Inventors: Ming-Han Tsai, Chih-Fan Hu
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Patent number: 11345590Abstract: A semiconductor sensor, comprising a gas-sensing device and an integrated circuit is provided. The gas-sensing device includes a substrate having a sensing area and an interconnection area in the vicinity of the sensing area, an inter-metal dielectric (IMD) layer formed above the substrate in the sensing area and in the interconnection area, and an interconnect structure formed in the interconnection area; further includes a sensing electrode, a second TiO2-patterned portion, and a second Pt-patterned portion on the second TiO2-patterned portion in the sensing area. The interconnect structure includes a tungsten layer buried in the IMD layer, wherein part of a top surface of the tungsten layer is exposed by at least a via. The interconnect structure further includes a platinum layer formed in said at least the via, a TiO2 layer formed on the IMD layer, a first TiO2-patterned portion and a first Pt-patterned portion.Type: GrantFiled: November 13, 2020Date of Patent: May 31, 2022Assignee: UNITED MICROELECTRONICS CORP.Inventors: Chih-Fan Hu, Chia-Wei Lee, Chang-Sheng Hsu, Weng-Yi Chen
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Publication number: 20210061643Abstract: A semiconductor sensor, comprising a gas-sensing device and an integrated circuit is provided. The gas-sensing device includes a substrate having a sensing area and an interconnection area in the vicinity of the sensing area, an inter-metal dielectric (IMD) layer formed above the substrate in the sensing area and in the interconnection area, and an interconnect structure formed in the interconnection area; further includes a sensing electrode, a second TiO2-patterned portion, and a second Pt-patterned portion on the second TiO2-patterned portion in the sensing area. The interconnect structure includes a tungsten layer buried in the IMD layer, wherein part of a top surface of the tungsten layer is exposed by at least a via. The interconnect structure further includes a platinum layer formed in said at least the via, a TiO2 layer formed on the IMD layer, a first TiO2-patterned portion and a first Pt-patterned portion.Type: ApplicationFiled: November 13, 2020Publication date: March 4, 2021Inventors: Chih-Fan Hu, Chia-Wei Lee, Chang-Sheng Hsu, Weng-Yi Chen
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Patent number: 10870576Abstract: A semiconductor sensor, comprising a gas-sensing device and an integrated circuit is provided. The gas-sensing device includes a substrate having a sensing area and an interconnection area in the vicinity of the sensing area, an inter-metal dielectric (IMD) layer formed above the substrate in the sensing area and in the interconnection area, and an interconnect structure formed in the interconnection area; further includes a sensing electrode, a second TiO2-patterned portion, and a second Pt-patterned portion on the second TiO2-patterned portion in the sensing area. The interconnect structure includes a tungsten layer buried in the IMD layer, wherein part of a top surface of the tungsten layer is exposed by at least a via. The interconnect structure further includes a platinum layer formed in said at least the via, a TiO2 layer formed on the IMD layer, a first TiO2-patterned portion and a first Pt-patterned portion.Type: GrantFiled: March 19, 2020Date of Patent: December 22, 2020Assignee: UNITED MICROELECTRONICS CORP.Inventors: Chih-Fan Hu, Chia-Wei Lee, Chang-Sheng Hsu, Weng-Yi Chen
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Patent number: 10793426Abstract: A microelectromechanical system structure and a method for fabricating the same are provided. A method for fabricating a MEMS structure includes the following steps. A first substrate is provided, wherein a transistor, a first dielectric layer and an interconnection structure are formed thereon. A second substrate is provided, wherein a second dielectric layer and a thermal stability layer are formed on the second substrate. The first substrate is bonded to the second substrate, and the second substrate removed. A conductive layer is formed within the second dielectric layer and electrically connected to the interconnection structure. The thermal stability layer is located between the conductive layer and the interconnection structure. A growth temperature of a material of the thermal stability layer is higher than a growth temperature of a material of the conductive layer and a growth temperature of a material of the interconnection structure.Type: GrantFiled: August 21, 2018Date of Patent: October 6, 2020Assignee: UNITED MICROELECTRONICS CORP.Inventors: Chang-Sheng Hsu, Chih-Fan Hu, Chia-Wei Lee, En Chan Chen, Shih-Wei Li
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Publication number: 20200216304Abstract: A semiconductor sensor, comprising a gas-sensing device and an integrated circuit is provided. The gas-sensing device includes a substrate having a sensing area and an interconnection area in the vicinity of the sensing area, an inter-metal dielectric (IMD) layer formed above the substrate in the sensing area and in the interconnection area, and an interconnect structure formed in the interconnection area; further includes a sensing electrode, a second TiO2-patterned portion, and a second Pt-patterned portion on the second TiO2-patterned portion in the sensing area. The interconnect structure includes a tungsten layer buried in the IMD layer, wherein part of a top surface of the tungsten layer is exposed by at least a via. The interconnect structure further includes a platinum layer formed in said at least the via, a TiO2 layer formed on the IMD layer, a first TiO2-patterned portion and a first Pt-patterned portion.Type: ApplicationFiled: March 19, 2020Publication date: July 9, 2020Inventors: Chih-Fan Hu, Chia-Wei Lee, Chang-Sheng Hsu, Weng-Yi Chen
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Patent number: 10640368Abstract: A semiconductor sensor, comprising a gas-sensing device and an integrated circuit electrically connected to the gas-sensing device, is provided. The gas-sensing device includes a substrate having a sensing area and an interconnection area in the vicinity of the sensing area, an inter-metal dielectric (IMD) layer formed above the substrate in the sensing area and in the interconnection area, and an interconnect structure formed in the interconnection area. The interconnect structure includes a tungsten layer buried in the IMD layer, wherein part of a top surface of the tungsten layer is exposed by at least a via. The interconnect structure further includes a platinum layer formed in said at least the via, wherein the platinum (Pt) layer directly contacts the top surface of the tungsten layer.Type: GrantFiled: October 14, 2016Date of Patent: May 5, 2020Assignee: UNITED MICROELECTRONICS CORP.Inventors: Chih-Fan Hu, Chia-Wei Lee, Chang-Sheng Hsu, Weng-Yi Chen
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Patent number: 10408780Abstract: The present invention provides a structure of a gas sensor, comprising: a support, having a front side, a back side opposite to the front side, a cell region, and a peripheral region circling the cell region; a cavity, formed on the back side of the support in the cell region; a heater, disposed on the front side of the support covering the cavity; a sensing element, disposed on the heater; and a sealing layer, formed on the back side of the support covering inside the cavity.Type: GrantFiled: April 20, 2017Date of Patent: September 10, 2019Assignee: UNITED MICROELECTRONICS CORPORATIONInventors: Chia-Wei Lee, Chang-Sheng Hsu, Chih-Fan Hu, Chin-Jen Cheng, Chang Hsin Wu
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Publication number: 20180354783Abstract: A microelectromechanical system structure and a method for fabricating the same are provided. A method for fabricating a MEMS structure includes the following steps. A first substrate is provided, wherein a transistor, a first dielectric layer and an interconnection structure are formed thereon. A second substrate is provided, wherein a second dielectric layer and a thermal stability layer are formed on the second substrate. The first substrate is bonded to the second substrate, and the second substrate removed. A conductive layer is formed within the second dielectric layer and electrically connected to the interconnection structure. The thermal stability layer is located between the conductive layer and the interconnection structure. A growth temperature of a material of the thermal stability layer is higher than a growth temperature of a material of the conductive layer and a growth temperature of a material of the interconnection structure.Type: ApplicationFiled: August 21, 2018Publication date: December 13, 2018Applicant: United Microelectronics Corp.Inventors: Chang-Sheng Hsu, Chih-Fan Hu, Chia-Wei Lee, En Chan Chen, Shih-Wei Li
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Publication number: 20180306738Abstract: The present invention provides a structure of a gas sensor, comprising: a support, having a front side, a back side opposite to the front side, a cell region, and a peripheral region circling the cell region; a cavity, formed on the back side of the support in the cell region; a heater, disposed on the front side of the support covering the cavity; a sensing element, disposed on the heater; and a sealing layer, formed on the back side of the support covering inside the cavity.Type: ApplicationFiled: April 20, 2017Publication date: October 25, 2018Inventors: Chia-Wei LEE, Chang-Sheng HSU, Chih-Fan HU, Chin-Jen CHENG, Chang Hsin WU
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Patent number: 10087072Abstract: A microelectromechanical system structure and a method for fabricating the same are provided. A method for fabricating a MEMS structure includes the following steps. A first substrate is provided, wherein a transistor, a first dielectric layer and an interconnection structure are formed thereon. A second substrate is provided, wherein a second dielectric layer and a thermal stability layer are formed on the second substrate. The first substrate is bonded to the second substrate, and the second substrate removed. A conductive layer is formed within the second dielectric layer and electrically connected to the interconnection structure. The thermal stability layer is located between the conductive layer and the interconnection structure. A growth temperature of a material of the thermal stability layer is higher than a growth temperature of a material of the conductive layer and a growth temperature of a material of the interconnection structure.Type: GrantFiled: May 4, 2016Date of Patent: October 2, 2018Assignee: United Microelectronics Corp.Inventors: Chang-Sheng Hsu, Chih-Fan Hu, Chia-Wei Lee, En Chan Chen, Shih-Wei Li
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Publication number: 20180057354Abstract: A semiconductor sensor, comprising a gas-sensing device and an integrated circuit electrically connected to the gas-sensing device, is provided. The gas-sensing device includes a substrate having a sensing area and an interconnection area in the vicinity of the sensing area, an inter-metal dielectric (IMD) layer formed above the substrate in the sensing area and in the interconnection area, and an interconnect structure formed in the interconnection area. The interconnect structure includes a tungsten layer buried in the IMD layer, wherein part of a top surface of the tungsten layer is exposed by at least a via. The interconnect structure further includes a platinum layer formed in said at least the via, wherein the platinum (Pt) layer directly contacts the top surface of the tungsten layer.Type: ApplicationFiled: October 14, 2016Publication date: March 1, 2018Inventors: Chih-Fan Hu, Chia-Wei Lee, Chang-Sheng Hsu, Weng-Yi Chen
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Publication number: 20170320727Abstract: A microelectromechanical system structure and a method for fabricating the same are provided. A method for fabricating a MEMS structure includes the following steps. A first substrate is provided, wherein a transistor, a first dielectric layer and an interconnection structure are formed thereon. A second substrate is provided, wherein a second dielectric layer and a thermal stability layer are formed on the second substrate. The first substrate is bonded to the second substrate, and the second substrate removed. A conductive layer is formed within the second dielectric layer and electrically connected to the interconnection structure. The thermal stability layer is located between the conductive layer and the interconnection structure. A growth temperature of a material of the thermal stability layer is higher than a growth temperature of a material of the conductive layer and a growth temperature of a material of the interconnection structure.Type: ApplicationFiled: May 4, 2016Publication date: November 9, 2017Inventors: Chang-Sheng Hsu, Chih-Fan Hu, Chia-Wei Lee, En Chan Chen, Shih-Wei Li