Patents by Inventor CHIH-FENG CHIANG
CHIH-FENG CHIANG has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Publication number: 20240071953Abstract: A memory device including a base semiconductor die, conductive terminals, memory dies, an insulating encapsulation and a buffer cap is provided. The conductive terminals are disposed on a first surface of the base semiconductor die. The memory dies are stacked over a second surface of the base semiconductor die, and the second surface of the base semiconductor die is opposite to the first surface of the base semiconductor die. The insulating encapsulation is disposed on the second surface of the base semiconductor die and laterally encapsulates the memory dies. The buffer cap covers the first surface of the base semiconductor die, sidewalls of the base semiconductor die and sidewalls of the insulating encapsulation. A package structure including the above- mentioned memory device is also provided.Type: ApplicationFiled: November 6, 2023Publication date: February 29, 2024Applicant: Taiwan Semiconductor Manufacturing Company, Ltd.Inventors: Kai-Ming Chiang, Chao-wei Li, Wei-Lun Tsai, Chia-Min Lin, Yi-Da Tsai, Sheng-Feng Weng, Yu-Hao Chen, Sheng-Hsiang Chiu, Chih-Wei Lin, Ching-Hua Hsieh
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Publication number: 20240071954Abstract: A memory device including a base semiconductor die, conductive terminals, memory dies, an insulating encapsulation and a buffer cap is provided. The conductive terminals are disposed on a first surface of the base semiconductor die. The memory dies are stacked over a second surface of the base semiconductor die, and the second surface of the base semiconductor die is opposite to the first surface of the base semiconductor die. The insulating encapsulation is disposed on the second surface of the base semiconductor die and laterally encapsulates the memory dies. The buffer cap covers the first surface of the base semiconductor die, sidewalls of the base semiconductor die and sidewalls of the insulating encapsulation. A package structure including the above-mentioned memory device is also provided.Type: ApplicationFiled: November 9, 2023Publication date: February 29, 2024Applicant: Taiwan Semiconductor Manufacturing Company, Ltd.Inventors: Kai-Ming Chiang, Chao-wei Li, Wei-Lun Tsai, Chia-Min Lin, Yi-Da Tsai, Sheng-Feng Weng, Yu-Hao Chen, Sheng-Hsiang Chiu, Chih-Wei Lin, Ching-Hua Hsieh
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Patent number: 10756625Abstract: An integrated module of acoustic wave device with active thermal compensation comprises a substrate, an acoustic wave filter, an active adjustment circuit and at least one variable capacitance device. The acoustic wave filter comprises a plurality of series acoustic wave resonators formed on the substrate, at least one shunt acoustic wave resonator formed on the substrate and a thermal sensing acoustic wave resonator. Each of the variable capacitance device is connected in parallel to one of the series and shunt acoustic wave resonators. The active adjustment circuit outputs an active thermal compensation signal correlated to a thermal variation sensed by the thermal sensing acoustic wave resonator to the variable capacitance device. The active thermal compensation signal induces a capacitance variation of the variable capacitance device such that the impact of the thermal variation to the acoustic wave device is compensated.Type: GrantFiled: June 27, 2017Date of Patent: August 25, 2020Assignee: WIN SEMICONDUCTORS CORP.Inventors: Re Ching Lin, Shu Hsiao Tsai, Cheng Kuo Lin, Chih-Feng Chiang, Fan Hsiu Huang, Tung-Yao Chou
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Patent number: 10727741Abstract: An acoustic wave filter having thermal sensing acoustic wave resonator comprises a substrate, a plurality of series acoustic wave resonators formed on the substrate, at least one shunt acoustic wave resonator formed on the substrate and a thermal sensing acoustic wave resonator. The thermal sensing acoustic wave resonator is one of a series acoustic wave resonator and a shunt acoustic wave resonator. Thereby the thermal sensing acoustic wave resonator plays dual roles of thermal sensing and acoustic wave filtering.Type: GrantFiled: June 27, 2017Date of Patent: July 28, 2020Assignee: WIN SEMICONDUCTORS CORP.Inventors: Re Ching Lin, Shu Hsiao Tsai, Cheng Kuo Lin, Fan Hsiu Huang, Chih-Feng Chiang, Tung-Yao Chou
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Patent number: 10453805Abstract: A chip stack having a protection structure for semiconductor device package, which comprises a first chip and a second chip stacked with each other, wherein said first chip has a first surface, said second chip has a second surface, said first surface and said second surface are two surfaces facing to each other, wherein at least one metal pillar is formed on at least one of said first surface and said second surface and connected with the other, at least one protection ring is formed on at least one of said first surface and said second surface and having a first gap with the other, and at least one electrical device is formed on at least one of said first surface and said second surface, wherein said at least one electrical device is located inside at least one of said at least one protection ring.Type: GrantFiled: May 5, 2016Date of Patent: October 22, 2019Assignee: WIN SEMICONDUCTORS CORP.Inventors: Pei-Chun Liao, Po-Wei Ting, Chih-Feng Chiang, Yu-Kai Wu, Yu-Fan Chang, Re-Ching Lin, Shu-Hsiao Tsai, Cheng-Kuo Lin
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Patent number: 10298203Abstract: A chip stack having a protection structure for semiconductor device package comprises a first chip and a second chip stacked with each other. A first surface of the first chip and a second surface of the second chip are facing to each other. At least one metal pillar is formed on at least one of the first surface and the second surface and connected with the other. At least one protection ring is formed on at least one of the first surface and the second surface and having a first gap with the other. At least one electrical device is formed on at least one of the first surface and the second surface and is located inside at least one of the at least one protection ring, wherein the at least one electrical device includes a temperature sensor.Type: GrantFiled: March 30, 2017Date of Patent: May 21, 2019Assignee: WIN SEMICONDUCTORS CORP.Inventors: Pei-Chun Liao, Po-Wei Ting, Chih-Feng Chiang, Yu-Kai Wu, Yu-Fan Chang, Re-Ching Lin, Shu-Hsiao Tsai, Cheng-Kuo Lin
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Patent number: 10250228Abstract: A bulk acoustic wave resonator with a mass adjustment structure comprises a supporting layer, a lower metal layer, a piezoelectric layer, an upper metal layer and a mass adjustment structure. The supporting layer is formed on a substrate. The supporting layer has a cavity, and the cavity has a top-inner surface. The lower metal layer is formed on the supporting layer. The piezoelectric layer is formed on the lower metal layer. The upper metal layer is formed on the piezoelectric layer. An acoustic wave resonance region is defined by an overlapping region of projections of the upper metal layer, the piezoelectric layer, the lower metal layer, the supporting layer and the cavity. The acoustic wave resonance region is divided into a peripheral region and a central region. The mass adjustment structure comprises a peripheral mass adjustment structure formed on the top-inner surface within the peripheral region.Type: GrantFiled: February 10, 2017Date of Patent: April 2, 2019Assignee: WIN SEMICONDUCTORS CORP.Inventors: Chia-Ta Chang, Chih-Feng Chiang, Tzu-Sheng Hsieh
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Patent number: 10103624Abstract: A thermal sensor circuit comprises a conversion circuit which is one of a buck DC-DC converter circuit and a boost DC-DC converter circuit, wherein the conversion circuit comprises an inductor and an output terminal. A thermal sensor senses a thermal variation correlated to a capacitance variation of the thermal sensor. The capacitance variation induces an internal parasitic capacitance variation of the inductor which is connected in parallel to the thermal sensor and results a variation of an energy stored in the inductor. Hence a variation of a converted circuit signal outputting by the output terminal is caused, wherein the variation of the converted circuit signal is correlated to the thermal variation.Type: GrantFiled: June 27, 2017Date of Patent: October 16, 2018Assignee: WIN Semiconductors Corp.Inventors: Re Ching Lin, Fan Hsiu Huang, Tung-Yao Chou, Cheng Kuo Lin, Shu Hsiao Tsai, Chih-Feng Chiang
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Patent number: 10097156Abstract: A resonance structure of bulk acoustic wave resonator comprises a bottom electrode, a dielectric layer and a top electrode, wherein the dielectric layer is formed on the bottom electrode; the top electrode is formed on the dielectric layer. A resonance area is defined by the overlapping area of the projection of the bottom electrode, the dielectric layer and the top electrode. The resonance area has a contour. The contour includes at least three curved edges and is formed by connecting the at least three curved edges. Each curved edge is concave to a geometric center of the contour.Type: GrantFiled: August 4, 2016Date of Patent: October 9, 2018Assignee: WIN SEMICONDUCTORS CORP.Inventors: Chia-Ta Chang, Re Ching Lin, Yung-Chung Chin, Chih-Feng Chiang
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Publication number: 20180109240Abstract: A bulk acoustic wave resonator with a mass adjustment structure comprises a supporting layer, a lower metal layer, a piezoelectric layer, an upper metal layer and a mass adjustment structure. The supporting layer is formed on a substrate. The supporting layer has a cavity, and the cavity has a top-inner surface. The lower metal layer is formed on the supporting layer. The piezoelectric layer is formed on the lower metal layer. The upper metal layer is formed on the piezoelectric layer. An acoustic wave resonance region is defined by an overlapping region of projections of the upper metal layer, the piezoelectric layer, the lower metal layer, the supporting layer and the cavity. The acoustic wave resonance region is divided into a peripheral region and a central region. The mass adjustment structure comprises a peripheral mass adjustment structure formed on the top-inner surface within the peripheral region.Type: ApplicationFiled: February 10, 2017Publication date: April 19, 2018Inventors: Chia-Ta CHANG, Chih-Feng CHIANG, Tzu-Sheng HSIEH
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Patent number: 9905610Abstract: An integrated structure of acoustic wave device and varactor comprises an acoustic wave device and a varactor formed on a first part and a second part of a semiconductor substrate respectively. The acoustic wave device comprises an acoustic wave device upper structure and a first part of a bottom epitaxial structure. The acoustic wave device upper structure is formed on the first part of the bottom epitaxial structure. The varactor comprises a varactor upper structure and a second part of the bottom epitaxial structure. The varactor upper structure is formed on the second part of the bottom epitaxial structure. The integrated structure of the acoustic wave device and the varactor formed on the same semiconductor substrate is capable of reducing the module size, optimizing the impedance matching, and reducing the signal loss between the varactor and the acoustic wave device.Type: GrantFiled: February 28, 2017Date of Patent: February 27, 2018Assignee: WIN SEMICONDUCTORS CORP.Inventors: Shu-Hsiao Tsai, Re Ching Lin, Pei-Chun Liao, Cheng-Kuo Lin, Yung-Chung Chin, Chih-Feng Chiang
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Publication number: 20180006556Abstract: A thermal sensor circuit comprises a conversion circuit which is one of a buck DC-DC converter circuit and a boost DC-DC converter circuit, wherein the conversion circuit comprises an inductor and an output terminal. A thermal sensor senses a thermal variation correlated to a capacitance variation of the thermal sensor. The capacitance variation induces an internal parasitic capacitance variation of the inductor which is connected in parallel to the thermal sensor and results a variation of an energy stored in the inductor. Hence a variation of a converted circuit signal outputting by the output terminal is caused, wherein the variation of the converted circuit signal is correlated to the thermal variation.Type: ApplicationFiled: June 27, 2017Publication date: January 4, 2018Inventors: Re Ching Lin, Fan Hsiu Huang, Tung-Yao Chou, Cheng Kuo Lin, Shu Hsiao Tsai, Chih-Feng Chiang
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Publication number: 20180003570Abstract: An acoustic wave filter having thermal sensing acoustic wave resonator comprises a substrate, a plurality of series acoustic wave resonators formed on the substrate, at least one shunt acoustic wave resonator formed on the substrate and a thermal sensing acoustic wave resonator. The thermal sensing acoustic wave resonator is one of a series acoustic wave resonator and a shunt acoustic wave resonator. Thereby the thermal sensing acoustic wave resonator plays dual roles of thermal sensing and acoustic wave filtering.Type: ApplicationFiled: June 27, 2017Publication date: January 4, 2018Inventors: Re Ching Lin, Shu Hsiao Tsai, Cheng Kuo Lin, Fan Hsiu Huang, Chih-Feng Chiang, Tung-Yao Chou
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Publication number: 20180006633Abstract: An integrated module of acoustic wave device with active thermal compensation comprises a substrate, an acoustic wave filter, an active adjustment circuit and at least one variable capacitance device. The acoustic wave filter comprises a plurality of series acoustic wave resonators formed on the substrate, at least one shunt acoustic wave resonator formed on the substrate and a thermal sensing acoustic wave resonator. Each of the variable capacitance device is connected in parallel to one of the series and shunt acoustic wave resonators. The active adjustment circuit outputs an active thermal compensation signal correlated to a thermal variation sensed by the thermal sensing acoustic wave resonator to the variable capacitance device. The active thermal compensation signal induces a capacitance variation of the variable capacitance device such that the impact of the thermal variation to the acoustic wave device is compensated.Type: ApplicationFiled: June 27, 2017Publication date: January 4, 2018Inventors: Re Ching Lin, Shu Hsiao Tsai, Cheng Kuo Lin, Chih-Feng Chiang, Fan Hsiu Huang, Tung-Yao Chou
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Publication number: 20170294893Abstract: A resonance structure of bulk acoustic wave resonator comprises a bottom electrode, a dielectric layer and a top electrode, wherein the dielectric layer is formed on the bottom electrode; the top electrode is formed on the dielectric layer. A resonance area is defined by the overlapping area of the projection of the bottom electrode, the dielectric layer and the top electrode. The resonance area has a contour. The contour includes at least three curved edges and is formed by connecting the at least three curved edges. Each curved edge is concave to a geometric center of the contour.Type: ApplicationFiled: August 4, 2016Publication date: October 12, 2017Inventors: Chia-Ta CHANG, Re Ching LIN, Yung-Chung CHIN, Chih-Feng CHIANG
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Publication number: 20170272052Abstract: A protective cover for an acoustic wave device and a fabrication method thereof, for protecting an acoustic wave device having a resonant area on a surface of a substrate during a packaging operation so as to avoid molding compound flowing onto the resonant area of the acoustic wave device, wherein at least one electrical device is provided on the surface of the substrate and the at least one electrical device includes a temperature sensor. The acoustic wave device protection structure comprising: a metal covering layer, having a concave surface and a bottom rim, the bottom rim connected to the acoustic wave device and forming at least one opening between the bottom rim and the acoustic wave device, and the concave surface covering over the resonant area to form a cavity between the concave surface and the resonant area.Type: ApplicationFiled: June 8, 2017Publication date: September 21, 2017Inventors: Cheng-Kuo Lin, Shu-Hsiao Tsai, Rong-Hao Syu, Yi-Ling Liu, Re-Ching Lin, Pei-Chun Liao, Chih-Feng Chiang
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Publication number: 20170203959Abstract: A chip stack having a protection structure for semiconductor device package comprises a first chip and a second chip stacked with each other. A first surface of the first chip and a second surface of the second chip are facing to each other. At least one metal pillar is formed on at least one of the first surface and the second surface and connected with the other. At least one protection ring is formed on at least one of the first surface and the second surface and having a first gap with the other. At least one electrical device is formed on at least one of the first surface and the second surface and is located inside at least one of the at least one protection ring, wherein the at least one electrical device includes a temperature sensor.Type: ApplicationFiled: March 30, 2017Publication date: July 20, 2017Inventors: PEI-CHUN LIAO, PO-WEI TING, CHIH-FENG CHIANG, YU-KAI WU, YU-FAN CHANG, RE-CHING LIN, SHU-HSIAO TSAI, CHENG-KUO LIN
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Publication number: 20170162518Abstract: A chip stack having a protection structure for semiconductor device package, which comprises a first chip and a second chip stacked with each other, wherein said first chip has a first surface, said second chip has a second surface, said first surface and said second surface are two surfaces facing to each other, wherein at least one metal pillar is formed on at least one of said first surface and said second surface and connected with the other, at least one protection ring is formed on at least one of said first surface and said second surface and having a first gap with the other, and at least one electrical device is formed on at least one of said first surface and said second surface, wherein said at least one electrical device is located inside at least one of said at least one protection ring.Type: ApplicationFiled: May 5, 2016Publication date: June 8, 2017Inventors: PEI-CHUN LIAO, PO-WEI TING, CHIH-FENG CHIANG, YU-KAI WU, YU-FAN CHANG, RE-CHING LIN, SHU-HSIAO TSAI, CHENG-KUO LIN