Patents by Inventor Chih-Feng Hsieh
Chih-Feng Hsieh has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Publication number: 20240136905Abstract: A button mechanism is provided, including a button element, a magnet connected to the button, a hollow tube, a first coil, and a second coil. The first and second coils are disposed on the tube. When the first coil generates a first magnetic field, the magnet is magnetically attracted by the first coil, and the button element is positioned in the first position. When the second coil generates a second magnetic field, the magnet is attracted by the second coil, and the button element is positioned in the second position.Type: ApplicationFiled: January 13, 2023Publication date: April 25, 2024Inventors: Chun-Lung CHEN, Chih-Ching HSIEH, Chun-Feng YEH
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Publication number: 20240096873Abstract: Electrostatic discharge (ESD) structures are provided. An ESD structure includes a semiconductor substrate, a first epitaxy region with a first type of conductivity over the semiconductor substrate, a second epitaxy region with a second type of conductivity over the semiconductor substrate, and a plurality of semiconductor layers. The semiconductor layers are stacked over the semiconductor substrate and between the first and second epitaxy regions. A first conductive feature is formed over the first epitaxy region and outside an oxide diffusion region. A second conductive feature is formed over the second epitaxy region and outside the oxide diffusion region. A third conductive feature is formed over the first epitaxy region and within the oxide diffusion region. A fourth conductive feature is formed over the second epitaxy region and within the oxide diffusion region. The oxide diffusion region is disposed between the first and second conductive features.Type: ApplicationFiled: November 28, 2023Publication date: March 21, 2024Inventors: Chun-Chia HSU, Tung-Heng HSIEH, Yung-Feng CHANG, Bao-Ru YOUNG, Jam-Wem LEE, Chih-Hung WANG
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Publication number: 20240071954Abstract: A memory device including a base semiconductor die, conductive terminals, memory dies, an insulating encapsulation and a buffer cap is provided. The conductive terminals are disposed on a first surface of the base semiconductor die. The memory dies are stacked over a second surface of the base semiconductor die, and the second surface of the base semiconductor die is opposite to the first surface of the base semiconductor die. The insulating encapsulation is disposed on the second surface of the base semiconductor die and laterally encapsulates the memory dies. The buffer cap covers the first surface of the base semiconductor die, sidewalls of the base semiconductor die and sidewalls of the insulating encapsulation. A package structure including the above-mentioned memory device is also provided.Type: ApplicationFiled: November 9, 2023Publication date: February 29, 2024Applicant: Taiwan Semiconductor Manufacturing Company, Ltd.Inventors: Kai-Ming Chiang, Chao-wei Li, Wei-Lun Tsai, Chia-Min Lin, Yi-Da Tsai, Sheng-Feng Weng, Yu-Hao Chen, Sheng-Hsiang Chiu, Chih-Wei Lin, Ching-Hua Hsieh
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Publication number: 20240071953Abstract: A memory device including a base semiconductor die, conductive terminals, memory dies, an insulating encapsulation and a buffer cap is provided. The conductive terminals are disposed on a first surface of the base semiconductor die. The memory dies are stacked over a second surface of the base semiconductor die, and the second surface of the base semiconductor die is opposite to the first surface of the base semiconductor die. The insulating encapsulation is disposed on the second surface of the base semiconductor die and laterally encapsulates the memory dies. The buffer cap covers the first surface of the base semiconductor die, sidewalls of the base semiconductor die and sidewalls of the insulating encapsulation. A package structure including the above- mentioned memory device is also provided.Type: ApplicationFiled: November 6, 2023Publication date: February 29, 2024Applicant: Taiwan Semiconductor Manufacturing Company, Ltd.Inventors: Kai-Ming Chiang, Chao-wei Li, Wei-Lun Tsai, Chia-Min Lin, Yi-Da Tsai, Sheng-Feng Weng, Yu-Hao Chen, Sheng-Hsiang Chiu, Chih-Wei Lin, Ching-Hua Hsieh
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Patent number: 11438693Abstract: A footsteps tracking method, including the steps of: receiving a first sound signal of a user's first footstep; calculating a first position of the first footstep according to relative position relationship of at least three microphones in the microphone array and time differences of sound arrival of the first sound signal received by the three microphones respectively; receiving a second sound signal of a second footstep of the user, wherein an audio frequency of the second sound signal is the same as an audio frequency of the first sound signal; and calculating a second position of the second footstep according to the first position, a time difference between receiving the first sound signal and the second sound signal, receiving angles between the first sound signal and a pair of the three microphones, and receiving angles between the second sound signal and the pair of the three microphones.Type: GrantFiled: July 15, 2021Date of Patent: September 6, 2022Assignee: Nanning FuLian FuGui Precision Industrial Co., Ltd.Inventor: Chih-Feng Hsieh
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Publication number: 20220070578Abstract: A footsteps tracking method, including the steps of: receiving a first sound signal of a user's first footstep; calculating a first position of the first footstep according to relative position relationship of at least three microphones in the microphone array and time differences of sound arrival of the first sound signal received by the three microphones respectively; receiving a second sound signal of a second footstep of the user, wherein an audio frequency of the second sound signal is the same as an audio frequency of the first sound signal; and calculating a second position of the second footstep according to the first position, a time difference between receiving the first sound signal and the second sound signal, receiving angles between the first sound signal and a pair of the three microphones, and receiving angles between the second sound signal and the pair of the three microphones.Type: ApplicationFiled: July 15, 2021Publication date: March 3, 2022Inventor: CHIH-FENG HSIEH
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Patent number: 11122364Abstract: A footsteps tracking method, including the steps of: receiving a first sound signal of a user's first footstep; calculating a first position of the first footstep according to relative position relationship of at least three microphones in the microphone array and time differences of sound arrival of the first sound signal received by the three microphones respectively; receiving a second sound signal of a second footstep of the user, wherein an audio frequency of the second sound signal is the same as an audio frequency of the first sound signal; and calculating a second position of the second footstep according to the first position, a time difference between receiving the first sound signal and the second sound signal, receiving angles between the first sound signal and a pair of the three microphones, and receiving angles between the second sound signal and the pair of the three microphones.Type: GrantFiled: August 31, 2020Date of Patent: September 14, 2021Assignee: NANNING FUGUI PRECISION INDUSTRIAL CO., LTD.Inventor: Chih-Feng Hsieh