Patents by Inventor Chih-Feng LI
Chih-Feng LI has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
-
Publication number: 20240071953Abstract: A memory device including a base semiconductor die, conductive terminals, memory dies, an insulating encapsulation and a buffer cap is provided. The conductive terminals are disposed on a first surface of the base semiconductor die. The memory dies are stacked over a second surface of the base semiconductor die, and the second surface of the base semiconductor die is opposite to the first surface of the base semiconductor die. The insulating encapsulation is disposed on the second surface of the base semiconductor die and laterally encapsulates the memory dies. The buffer cap covers the first surface of the base semiconductor die, sidewalls of the base semiconductor die and sidewalls of the insulating encapsulation. A package structure including the above- mentioned memory device is also provided.Type: ApplicationFiled: November 6, 2023Publication date: February 29, 2024Applicant: Taiwan Semiconductor Manufacturing Company, Ltd.Inventors: Kai-Ming Chiang, Chao-wei Li, Wei-Lun Tsai, Chia-Min Lin, Yi-Da Tsai, Sheng-Feng Weng, Yu-Hao Chen, Sheng-Hsiang Chiu, Chih-Wei Lin, Ching-Hua Hsieh
-
Publication number: 20240071954Abstract: A memory device including a base semiconductor die, conductive terminals, memory dies, an insulating encapsulation and a buffer cap is provided. The conductive terminals are disposed on a first surface of the base semiconductor die. The memory dies are stacked over a second surface of the base semiconductor die, and the second surface of the base semiconductor die is opposite to the first surface of the base semiconductor die. The insulating encapsulation is disposed on the second surface of the base semiconductor die and laterally encapsulates the memory dies. The buffer cap covers the first surface of the base semiconductor die, sidewalls of the base semiconductor die and sidewalls of the insulating encapsulation. A package structure including the above-mentioned memory device is also provided.Type: ApplicationFiled: November 9, 2023Publication date: February 29, 2024Applicant: Taiwan Semiconductor Manufacturing Company, Ltd.Inventors: Kai-Ming Chiang, Chao-wei Li, Wei-Lun Tsai, Chia-Min Lin, Yi-Da Tsai, Sheng-Feng Weng, Yu-Hao Chen, Sheng-Hsiang Chiu, Chih-Wei Lin, Ching-Hua Hsieh
-
Patent number: 9292030Abstract: A circuit includes a band-gap reference circuit and a start-up circuit. The band-gap reference circuit includes an operational amplifier, a first current path between a power supply node and a reference node, a second current path between the power supply node and the reference node, and a feedback path between an output of the operational amplifier and the first and second current paths. A first input of the operational amplifier is coupled to the first current path, and a second input of the operational amplifier is coupled to the second current path. The start-up circuit includes a current source and at least one switch coupled between the current source and the band-gap reference circuit. The at least one switch is configured to electrically couple the current source with the first and second current paths during a start-up phase.Type: GrantFiled: July 30, 2014Date of Patent: March 22, 2016Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.Inventors: Chia-Fu Lee, Chih-Feng Li
-
Patent number: 9229467Abstract: A device includes a bandgap reference circuit and a start-up circuit. The bandgap reference circuit includes an amplifier and a first transistor. The amplifier has an inverting input terminal, a non-inverting input terminal, and an output terminal. The first transistor has a gate electrode electrically connected to the output terminal. The start-up circuit has a first path electrically connected to the output terminal and the non-inverting input terminal, and a second path electrically connected to the output terminal and the inverting input terminal.Type: GrantFiled: August 22, 2013Date of Patent: January 5, 2016Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.Inventor: Chih-Feng Li
-
Patent number: 8975882Abstract: A regulating circuit includes a first comparator configured to control a turning on and a turning off of a first transistor based on a first comparison a reference voltage to a feedback voltage. The first transistor is coupled between an output node and a first voltage supply. A second comparator is configured to control a turning on and a turning off of a second transistor based on a second comparison of the reference voltage to the feedback voltage. The second transistor is coupled to the output node. A high-impedance circuit is coupled in series with the second transistor such that the high-impedance block is disposed between the second transistor and a second power supply. The high-impedance circuit is configured to generate a constant current between the output node and the second voltage supply when the second transistor is turned on.Type: GrantFiled: October 31, 2012Date of Patent: March 10, 2015Assignee: Taiwan Semiconductor Manufacturing Co., Ltd.Inventor: Chih-Feng Li
-
Publication number: 20150054486Abstract: A device includes a bandgap reference circuit and a start-up circuit. The bandgap reference circuit includes an amplifier and a first transistor. The amplifier has an inverting input terminal, a non-inverting input terminal, and an output terminal. The first transistor has a gate electrode electrically connected to the output terminal. The start-up circuit has a first path electrically connected to the output terminal and the non-inverting input terminal, and a second path electrically connected to the output terminal and the inverting input terminal.Type: ApplicationFiled: August 22, 2013Publication date: February 26, 2015Applicant: Taiwan Semiconductor Manufacturing Company, Ltd.Inventor: Chih-Feng Li
-
Publication number: 20140340070Abstract: A circuit includes a band-gap reference circuit and a start-up circuit. The band-gap reference circuit includes an operational amplifier, a first current path between a power supply node and a reference node, a second current path between the power supply node and the reference node, and a feedback path between an output of the operational amplifier and the first and second current paths. A first input of the operational amplifier is coupled to the first current path, and a second input of the operational amplifier is coupled to the second current path. The start-up circuit includes a current source and at least one switch coupled between the current source and the band-gap reference circuit. The at least one switch is configured to electrically couple the current source with the first and second current paths during a start-up phase.Type: ApplicationFiled: July 30, 2014Publication date: November 20, 2014Inventors: Chia-Fu LEE, Chih-Feng LI
-
Patent number: 8816670Abstract: An electronic circuit includes a band-gap reference circuit and a start-up circuit. The band-gap reference circuit includes an operational amplifier which has an output and first and second inputs. The band-gap reference circuit is configured to generate a predetermined reference voltage at the output of the operational amplifier after a start-up phase of the band-gap reference circuit. The start-up circuit includes at least one switch arranged to connect at least one current source to at least one of the inputs of the operational amplifier during the start-up phase, and to disconnect the at least one current source from the at least one of the inputs of the operational amplifier after the start-up phase.Type: GrantFiled: September 30, 2011Date of Patent: August 26, 2014Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.Inventors: Chia-Fu Lee, Chih-Feng Li
-
Publication number: 20140117952Abstract: A regulating circuit includes a first comparator configured to control a turning on and a turning off of a first transistor based on a first comparison a reference voltage to a feedback voltage. The first transistor is coupled between an output node and a first voltage supply. A second comparator is configured to control a turning on and a turning off of a second transistor based on a second comparison of the reference voltage to the feedback voltage. The second transistor is coupled to the output node. A high-impedance circuit is coupled in series with the second transistor such that the high-impedance block is disposed between the second transistor and a second power supply. The high-impedance circuit is configured to generate a constant current between the output node and the second voltage supply when the second transistor is turned on.Type: ApplicationFiled: October 31, 2012Publication date: May 1, 2014Applicant: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.Inventor: Chih-Feng LI
-
Publication number: 20130082770Abstract: An electronic circuit includes a band-gap reference circuit and a start-up circuit. The band-gap reference circuit includes an operational amplifier which has an output and first and second inputs. The band-gap reference circuit is configured to generate a predetermined reference voltage at the output of the operational amplifier after a start-up phase of the band-gap reference circuit. The start-up circuit includes at least one switch arranged to connect at least one current source to at least one of the inputs of the operational amplifier during the start-up phase, and to disconnect the at least one current source from the at least one of the inputs of the operational amplifier after the start-up phase.Type: ApplicationFiled: September 30, 2011Publication date: April 4, 2013Applicant: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.Inventors: Chia-Fu LEE, Chih-Feng LI