Patents by Inventor Chih-Feng Lu

Chih-Feng Lu has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Publication number: 20250216773
    Abstract: A method for inspecting a mask is provided. The method includes placing the mask on a stage of an inspection tool; using a fan assembly, introducing a gas flow into the inspection tool; performing an environmental pressure control over the inspection tool; and capturing an image of the mask. The environmental pressure control includes monitoring an in-tool pressure inside the inspection tool and an out-tool pressure outside the inspection tool; determining whether the pressure difference between the in-tool pressure and the out-tool pressure is out of an acceptable range; and in response the determination determines that the pressure difference between the in-tool pressure and the out-tool pressure is out of the acceptable range, adjusting the power of the fan assembly.
    Type: Application
    Filed: December 27, 2023
    Publication date: July 3, 2025
    Applicant: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.
    Inventors: Yen-Hsun CHEN, Chao-Ting CHEN, Chih-Feng LU, Han-Lung CHANG, Li-Jui CHEN
  • Publication number: 20250199398
    Abstract: A method includes capturing a first reference image of a mask by an inspection apparatus, the capturing comprising measuring a first reflected light intensity from the first reference image; performing, using the mask, an exposure process on a wafer; after performing the exposure process, measuring a second reflected light intensity on the mask by the inspection apparatus; comparing the second reflected light intensity with the first reflected light intensity from the first reference image; determining whether a first comparison result of the first and second reflected light intensities is acceptable; in response to the determination determines that the first comparison result is unacceptable, adjusting an inspection parameter of the inspection apparatus.
    Type: Application
    Filed: January 3, 2024
    Publication date: June 19, 2025
    Applicant: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.
    Inventors: Chao-Ting CHEN, Chih-Feng LU, Yen-Hsun CHEN, Shang-Chieh CHIEN, Li-Jui CHEN
  • Patent number: 10229977
    Abstract: A nitrogen-containing semiconductor device including a substrate, a first AlGaN buffer layer, a second AlGaN buffer layer and a semiconductor stacking layer is provided. The first AlGaN buffer layer is disposed on the substrate, and the second AlGaN buffer layer is disposed on the first AlGaN buffer layer. A chemical formula of the first AlGaN buffer layer is AlxGa1-xN, wherein 0?x?1. The first AlGaN buffer layer is doped with at least one of oxygen having a concentration greater than 5×1017 cm?3 and carbon having a concentration greater than 5×1017 cm?3. A chemical formula of the second AlGaN buffer layer is AlyGa1-yN, wherein 0?y?1. The semiconductor stacking layer is disposed on the second AlGaN buffer layer.
    Type: Grant
    Filed: September 19, 2017
    Date of Patent: March 12, 2019
    Assignee: Genesis Photonics Inc.
    Inventors: Cheng-Hsueh Lu, Hsin-Chiao Fang, Chi-Hao Cheng, Chih-Feng Lu, Chi-Feng Huang
  • Publication number: 20180083108
    Abstract: A nitrogen-containing semiconductor device including a substrate, a first AlGaN buffer layer, a second AlGaN buffer layer and a semiconductor stacking layer is provided. The first AlGaN buffer layer is disposed on the substrate, and the second AlGaN buffer layer is disposed on the first AlGaN buffer layer. A chemical formula of the first AlGaN buffer layer is AlxGa1-xN, wherein 0?x?1. The first AlGaN buffer layer is doped with at least one of oxygen having a concentration greater than 5×1017 cm?3 and carbon having a concentration greater than 5×1017 cm?3. A chemical formula of the second AlGaN buffer layer is AlyGa1-yN, wherein 0?y?1. The semiconductor stacking layer is disposed on the second AlGaN buffer layer.
    Type: Application
    Filed: September 19, 2017
    Publication date: March 22, 2018
    Applicant: Genesis Photonics Inc.
    Inventors: Cheng-Hsueh Lu, Hsin-Chiao Fang, Chi-Hao Cheng, Chih-Feng Lu, Chi-Feng Huang
  • Patent number: 7875478
    Abstract: A method for controlling the color contrast of a multi-wavelength light-emitting diode (LED) made according to the present invention is disclosed. The present invention includes at least the step of increasing the junction temperature of a multi-quantum-well LED, such that holes are distributed in a deeper quantum-well layer of the LED to increase luminous intensity of the deeper quantum-well layer, thereby controlling the relative intensity ratios of the multiple wavelengths emitted by the LED. The step of increasing junction temperature of the multi-quantum-well LED is achieved either by controlling resistance through modulating thickness of a p-type electrode layer of the LED or by modifying the mesa area size to control its relative heat radiation surface area.
    Type: Grant
    Filed: June 26, 2007
    Date of Patent: January 25, 2011
    Assignee: National Taiwan University
    Inventors: Dong-Ming Yeh, Horng-Shyang Chen, Chih-Feng Lu, Chi-Feng Huang, Tsung-Yi Tang, Jian-Jang Huang, Yen-Cheng Lu, Chih-Chung Yang, Jeng-Jie Huang, Yung-Sheng Chen
  • Publication number: 20100314606
    Abstract: A light-emitting device is disclosed, including a light-emitting element and a surface plasmon coupling element, having an intermediary layer connected to the light-emitting element and a metal structure on the intermediary layer, wherein the intermediary layer is conductive under low-frequency injection current and has the characteristics as dielectric material in a wavelength range 100 nm˜20000 nm.
    Type: Application
    Filed: August 19, 2009
    Publication date: December 16, 2010
    Applicant: NATIONAL TAIWAN UNIVERSITY
    Inventors: Chih-Chung Yang, Yen-Cheng Lu, Kun-Ching Shen, Fu-Ji Tsai, Jyh-Yang Wang, Cheng-Hung Lin, Chih-Feng Lu, Cheng-Yen Chen, Yean-Woei Kiang
  • Publication number: 20080157056
    Abstract: A producing method of poly-wavelength light-emitting diode of utilizing nano-crystals and the light-emitting device thereof includes growing and processing a multiple-quantum-well layer based on stacking the mixture of at least two kinds of quantum wells to produce a two-wavelength light-emitting diode. Then, attaching nano-crystals on the two-wavelength light-emitting diode to transfer one of the wavelengths of the two-wavelength light-emitting diode to produce a poly-wavelength light-emitting diode. The device of the present invention can emit blue, green and red lights to produce white light.
    Type: Application
    Filed: June 26, 2007
    Publication date: July 3, 2008
    Inventors: Dong-Ming Yeh, Horng-Shyang Chen, Chih-Feng Lu, Chi-Feng Huang, Wen-Yu Shiao, Jian-Jang Huang, Yen-Cheng Lu, Chih-Chung Yang
  • Publication number: 20080124827
    Abstract: A method and structure for manufacturing long-wavelength visible light-emitting diode (LED) using the prestrained growth effect comprises the following steps: Growing a strained low-indium-content InGaN layer on the N-type GaN layer, and then growing a high-indium-content InGaN/GaN single- or multiple-quantum-well light-emitting structure on the low-indium-content InGaN layer to enhance the indium content of the high-indium quantum wells and hence to elongate the emission wavelength of the LED. The method of the invention can elongate emission wavelength of the LED by more than 50 nm (nanometer) such that an originally designated green LED can emit red light or orange light without influencing other electrical properties.
    Type: Application
    Filed: June 28, 2007
    Publication date: May 29, 2008
    Inventors: Chi-Feng Huang, Tsung-Yi Tang, Jeng-Jie Huang, Wen-Yu Shiao, Horng-Shyang Chen, Chih-Feng Lu, Jian-Jang Huang, Chih-Chung Yang
  • Publication number: 20080035909
    Abstract: A method for controlling the color contrast of a multi-wavelength light-emitting diode (LED) made according to the present invention is disclosed. The present invention includes at least the step of increasing the junction temperature of a multi-quantum-well LED, such that holes are distributed in a deeper quantum-well layer of the LED to increase luminous intensity of the deeper quantum-well layer, thereby controlling the relative intensity ratios of the multiple wavelengths emitted by the LED. The step of increasing junction temperature of the multi-quantum-well LED is achieved either by controlling resistance through modulating thickness of a p-type electrode layer of the LED or by modifying the mesa area size to control its relative heat radiation surface area.
    Type: Application
    Filed: June 26, 2007
    Publication date: February 14, 2008
    Inventors: Chih-Feng Lu, Horng-Shyang Chen, Dong-Ming Yeh, Chi-Feng Huang, Tsung-Yi Tang, Jian-Jang Huang, Yen-Cheng Lu, Chih-Chung Yang, Jeng-Jie Huang, Yung-Sheng Chen