Abstract: In a method of manufacturing a semiconductor device, a fin structure is formed by patterning a semiconductor layer, and an annealing operation is performed on the fin structure. In the patterning of the semiconductor layer, a damaged area is formed on a sidewall of the fin structure, and the annealing operation eliminates the damaged area.

Abstract: Package structures and methods of forming package structures are described. A method includes placing a first package within a recess of a first substrate. The first package includes a first die. The method further includes attaching a first sensor to the first package and the first substrate. The first sensor is electrically coupled to the first package and the first substrate.

Abstract: A memory device including a base semiconductor die, conductive terminals, memory dies, an insulating encapsulation and a buffer cap is provided. The conductive terminals are disposed on a first surface of the base semiconductor die. The memory dies are stacked over a second surface of the base semiconductor die, and the second surface of the base semiconductor die is opposite to the first surface of the base semiconductor die. The insulating encapsulation is disposed on the second surface of the base semiconductor die and laterally encapsulates the memory dies. The buffer cap covers the first surface of the base semiconductor die, sidewalls of the base semiconductor die and sidewalls of the insulating encapsulation. A package structure including the above-mentioned memory device is also provided.

Abstract: A memory device including a base semiconductor die, conductive terminals, memory dies, an insulating encapsulation and a buffer cap is provided. The conductive terminals are disposed on a first surface of the base semiconductor die. The memory dies are stacked over a second surface of the base semiconductor die, and the second surface of the base semiconductor die is opposite to the first surface of the base semiconductor die. The insulating encapsulation is disposed on the second surface of the base semiconductor die and laterally encapsulates the memory dies. The buffer cap covers the first surface of the base semiconductor die, sidewalls of the base semiconductor die and sidewalls of the insulating encapsulation. A package structure including the above- mentioned memory device is also provided.

Abstract: A radiant heat-absorbing heat-preserving container includes a heat-absorbing body having an outer surface, an opening, and a receiving space; and a light-permeable layer covering the outer surface of the heat-absorbing body. Another radiant heat-absorbing heat-preserving container includes a base, a heat-absorbing cover having an outer surface, and a light-permeable layer covering the outer surface of the heat-absorbing cover, wherein the heat-absorbing cover is tightly connected with the periphery of the base to form a receiving space between the heat-absorbing cover and the base. A thermal insulation layer is formed between the light-permeable layer and the heat-absorbing cover in the radiant heat-absorbing heat-preserving containers of the present invention. When the outer surface of the heat-absorbing body or cover is exposed to light passing through the light-permeable layer, the heat-absorbing body or cover absorbs the thermal energy of, and is thus heated by, the light.