Patents by Inventor Chih-Fu Huang
Chih-Fu Huang has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Patent number: 11984342Abstract: A method includes forming a first polymer layer to cover a metal pad of a wafer, and patterning the first polymer layer to form a first opening. A first sidewall of the first polymer layer exposed to the first opening has a first tilt angle where the first sidewall is in contact with the metal pad. The method further includes forming a metal pillar in the first opening, sawing the wafer to generate a device die, encapsulating the device die in an encapsulating material, performing a planarization to reveal the metal pillar, forming a second polymer layer over the encapsulating material and the device die, and patterning the second polymer layer to form a second opening. The metal pillar is exposed through the second opening. A second sidewall of the second polymer layer exposed to the second opening has a second tilt angle greater than the first tilt angle.Type: GrantFiled: March 15, 2021Date of Patent: May 14, 2024Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.Inventors: Hsi-Kuei Cheng, Ching Fu Chang, Chih-Kang Han, Hsin-Chieh Huang
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Patent number: 11984379Abstract: Provided is an electronic package, in which a heat dissipating body is formed on an electronic device and is combined with a heat sink so that the electronic device, the heat dissipating body and the heat sink form a receiving space, and a heat dissipating material is formed in the receiving space and in contact with the heat sink and the electronic device, where a fluid regulating space is formed between the heat dissipating material and the heat dissipating body and is used as a volume regulating space for the heat dissipating material during thermal expansion and contraction.Type: GrantFiled: July 8, 2021Date of Patent: May 14, 2024Assignee: SILICONWARE PRECISION INDUSTRIES CO., LTD.Inventors: Yu-Lung Huang, Chih-Ming Huang, Kuo-Hua Yu, Chang-Fu Lin
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Publication number: 20240120402Abstract: A semiconductor device structure, along with methods of forming such, are described. The semiconductor device structure includes a first dielectric feature extending along a first direction, the first dielectric feature comprising a first dielectric layer having a first sidewall and a second sidewall opposing the first sidewall, a first semiconductor layer disposed adjacent the first sidewall, the first semiconductor layer extending along a second direction perpendicular to the first direction, a second dielectric feature extending along the first direction, the second dielectric feature disposed adjacent the first semiconductor layer, and a first gate electrode layer surrounding at least three surfaces of the first semiconductor layer, and a portion of the first gate electrode layer is exposed to a first air gap.Type: ApplicationFiled: November 19, 2023Publication date: April 11, 2024Applicant: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.Inventors: Jia-Ni YU, Kuo-Cheng CHIANG, Mao-Lin HUANG, Lung-Kun CHU, Chung-Wei HSU, Chun-Fu LU, Chih-Hao WANG, Kuan-Lun CHENG
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Publication number: 20240113195Abstract: Semiconductor structures and methods for forming the same are provided. The semiconductor structure includes a plurality of first nanostructures formed over a substrate, and a dielectric wall adjacent to the first nanostructures. The semiconductor structure also includes a first liner layer between the first nanostructures and the dielectric wall, and the first liner layer is in direct contact with the dielectric wall. The semiconductor structure also includes a gate structure surrounding the first nanostructures, and the first liner layer is in direct contact with a portion of the gate structure.Type: ApplicationFiled: February 22, 2023Publication date: April 4, 2024Applicant: Taiwan Semiconductor Manufacturing Company, Ltd.Inventors: Jia-Ni YU, Lung-Kun CHU, Chun-Fu LU, Chung-Wei HSU, Mao-Lin HUANG, Kuo-Cheng CHIANG, Chih-Hao WANG
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Patent number: 11948881Abstract: A semiconductor structure includes a die, a molding surrounding the die, a first dielectric layer disposed over the die and the molding, and a second dielectric layer disposed between the first dielectric layer and the die, and between the first dielectric layer and the molding. A material content ratio in the first dielectric layer is substantially greater than that in the second dielectric layer. In some embodiments, the material content ratio substantially inversely affects a mechanical strength of the first dielectric layer and the second dielectric layer.Type: GrantFiled: July 8, 2021Date of Patent: April 2, 2024Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY LTD.Inventors: Hsi-Kuei Cheng, Chih-Kang Han, Ching-Fu Chang, Hsin-Chieh Huang
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Publication number: 20240096994Abstract: A method for forming a semiconductor device is provided. The method includes forming a plurality of first channel nanostructures and a plurality of second channel nanostructures in an n-type device region and a p-type device region of a substrate, respectively, and sequentially depositing a gate dielectric layer, an n-type work function metal layer, and a cap layer surrounding each of the first and second channel nanostructures. The cap layer merges in first spaces between adjacent first channel nanostructures and merges in second spaces between adjacent second channel nanostructures. The method further includes selectively removing the cap layer and the n-type work function metal layer in the p-type device region, and depositing a p-type work function metal layer over the cap layer in the n-type device region and the gate dielectric layer in the p-type device region. The p-type work function metal layer merges in the second spaces.Type: ApplicationFiled: February 10, 2023Publication date: March 21, 2024Inventors: Lung-Kun CHU, Jia-Ni YU, Chun-Fu LU, Mao-Lin HUANG, Kuo-Cheng CHIANG, Chih-Hao WANG
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Patent number: 11929314Abstract: In some implementations, one or more semiconductor processing tools may form a metal cap on a metal gate. The one or more semiconductor processing tools may form one or more dielectric layers on the metal cap. The one or more semiconductor processing tools may form a recess to the metal cap within the one or more dielectric layers. The one or more semiconductor processing tools may perform a bottom-up deposition of metal material on the metal cap to form a metal plug within the recess and directly on the metal cap.Type: GrantFiled: March 12, 2021Date of Patent: March 12, 2024Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.Inventors: Chun-Hsien Huang, Peng-Fu Hsu, Yu-Syuan Cai, Min-Hsiu Hung, Chen-Yuan Kao, Ken-Yu Chang, Chun-I Tsai, Chia-Han Lai, Chih-Wei Chang, Ming-Hsing Tsai
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Patent number: 6346883Abstract: A mobile security system, which includes a warning signal transmitter unit installed in the place or equipment to be protected, an auto dialing unit having a signal receiver, and a cellular phone coupled to the auto dialing unit, wherein when the warning signal transmitter unit detects an abnormal condition, it immediately sends a warning signal to the signal receiver by radio, and the signal receiver immediately drives the auto dialing unit to dial a particular telephone number upon receipt of the warning signal, so as to inform a particular person or security center to take the necessary step. The auto dialing unit can be a mechanical design, or an electronic design as desired.Type: GrantFiled: August 12, 1999Date of Patent: February 12, 2002Inventors: Chih-Fu Huang, Hsin-Fu Yu, Chin-Chen Chen
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Patent number: 6320504Abstract: A mobile security system, which includes a warning signal transmitter unit installed in the place or equipment to be protected, an auto dialing unit having a signal receiver, and a cellular phone coupled to the auto dialing unit, wherein when the warning signal transmitter unit detects an abnormal condition, it immediately sends a warning signal to the signal receiver by radio, and the signal receiver immediately drives the auto dialing unit to dial a particular telephone number upon receipt of the warning signal, so as to inform a particular person or security center to take the necessary step. The auto dialing unit can be a mechanical design, or an electronic design as desired.Type: GrantFiled: March 26, 2001Date of Patent: November 20, 2001Inventors: Chih-Fu Huang, Hsin-Fu Yu, Chin-Chen Chen
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Publication number: 20010024161Abstract: A mobile security system, which includes a warning signal transmitter unit installed in the place or equipment to be protected, an auto dialing unit having a signal receiver, and a cellular phone coupled to the auto dialing unit, wherein when the warning signal transmitter unit detects an abnormal condition, it immediately sends a warning signal to the signal receiver by radio, and the signal receiver immediately drives the auto dialing unit to dial a particular telephone number upon receipt of the warning signal, so as to inform a particular person or security center to take the necessary step. The auto dialing unit can be a mechanical design, or an electronic design as desired.Type: ApplicationFiled: March 26, 2001Publication date: September 27, 2001Inventors: Chih-Fu Huang, Hsin-Fu Yu, Chin-Chen Chen