Patents by Inventor Chih-Han Lin

Chih-Han Lin has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Publication number: 20250048678
    Abstract: A semiconductor device includes plurality of fin structures extending in first direction on semiconductor substrate. Fin structure's lower portion is embedded in first insulating layer. First gate electrode and second gate electrode structures extend in second direction substantially perpendicular to first direction over of fin structures and first insulating layer. The first and second gate electrode structures are spaced apart and extend along line in same direction. First and second insulating sidewall spacers are arranged on opposing sides of first and second gate electrode structures. Each of first and second insulating sidewall spacers contiguously extend along second direction. A second insulating layer is in region between first and second gate electrode structures. The second insulating layer separates first and second gate electrode structures. A third insulating layer is in region between first and second gate electrode structures.
    Type: Application
    Filed: October 21, 2024
    Publication date: February 6, 2025
    Applicant: Taiwan Semiconductor Manufacturing Company, Ltd.
    Inventors: Chih-Han LIN, Shih-Chang TSAI, Wen-Shuo HSIEH, Te-Yung LIU
  • Patent number: 12218216
    Abstract: A semiconductor device and methods of fabricating the same are disclosed. The semiconductor device includes a substrate, a fin structure with a fin top surface disposed on the substrate, a source/drain (S/D) region disposed on the fin structure, a gate structure disposed on the fin top surface, and a gate spacer with first and second spacer portions disposed between the gate structure and the S/D region. The first spacer portion extends above the fin top surface and is disposed along a sidewall of the gate structure. The second spacer portion extends below the fin top surface and is disposed along a sidewall of the S/D region.
    Type: Grant
    Filed: August 9, 2023
    Date of Patent: February 4, 2025
    Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.
    Inventors: Wei-Liang Lu, Chang-Yin Chen, Chih-Han Lin, Chia-Yang Liao
  • Patent number: 12215872
    Abstract: There is provided an auto detection system including a thermal detection device and a host. The host controls an indication device to indicate a prompt message or detection results according to a slope variation of voltage values or 2D distribution of temperature values detected by the thermal detection device, wherein the voltage values include the detected voltage of a single pixel or the sum of detected voltages of multiple pixels of a thermal sensor.
    Type: Grant
    Filed: July 20, 2023
    Date of Patent: February 4, 2025
    Assignee: PIXART IMAGING INC.
    Inventors: Chih-Ming Sun, Ming-Han Tsai, Chiung-Wen Lin, Po-Wei Yu, Wei-Ming Wang, Sen-Huang Huang
  • Publication number: 20250040214
    Abstract: A semiconductor fabrication method includes: forming an epitaxial stack including at least one sacrificial epitaxial layer and at least one channel epitaxial layer; forming a plurality of fins in the epitaxial stack; performing tuning operations to prevent a width of the sacrificial epitaxial layer expanding beyond a width of the channel epitaxial layer during operations to form isolation features; forming the isolation features between the plurality of fins, wherein the width of the sacrificial epitaxial layer does not expand beyond the width of the channel epitaxial layer; forming a sacrificial gate stack; forming gate sidewall spacers on sidewalls of the sacrificial gate stack; forming inner spacers around the sacrificial epitaxial layer and the channel epitaxial layer; forming source/drain features; removing the sacrificial gate stack and sacrificial epitaxial layer; and forming a replacement metal gate, wherein the metal gate is shielded from the source/drain features.
    Type: Application
    Filed: July 27, 2023
    Publication date: January 30, 2025
    Applicant: Taiwan Semiconductor Manufacturing Company, Ltd.
    Inventors: Kuei-Yu Kao, Shih-Yao Lin, Chiung-Yu Cho, Po-Yuan Tseng, Min-Chiao Lin, Chen-Ping Chen, Chih-Han Lin, Ming-Ching Chang
  • Patent number: 12211750
    Abstract: Embodiments of mechanisms for forming a semiconductor device are provided. The semiconductor device includes a substrate. The semiconductor device also includes a first fin and a second fin over the substrate. The semiconductor device further includes a first gate electrode and a second gate electrode traversing over the first fin and the second fin, respectively. In addition, the semiconductor device includes a gate dielectric layer between the first fin and the first gate electrode and between the second fin and the second gate electrode. Further, the semiconductor device includes a dummy gate electrode over the substrate, and the dummy gate electrode is between the first gate electrode and the second gate electrode. An upper portion of the dummy gate electrode is wider than a lower portion of the dummy gate electrode.
    Type: Grant
    Filed: June 24, 2022
    Date of Patent: January 28, 2025
    Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.
    Inventors: Che-Cheng Chang, Chang-Yin Chen, Jr-Jung Lin, Chih-Han Lin, Yung-Jung Chang
  • Patent number: 12211919
    Abstract: A semiconductor device includes a plurality of semiconductor layers vertically separated from one another. Each of the plurality of semiconductor layers extends along a first lateral direction. The semiconductor device includes a gate structure that extends along a second lateral direction and comprises at least a lower portion that wraps around each of the plurality of semiconductor layers. The lower portion of the gate structure comprises a plurality of first gate sections that are laterally aligned with the plurality of semiconductor layers, respectively, and wherein each of the plurality of first gate sections has ends that each extend along the second lateral direction and present a first curvature-based profile.
    Type: Grant
    Filed: March 7, 2024
    Date of Patent: January 28, 2025
    Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.
    Inventors: Shih-Yao Lin, Chih-Han Lin, Hsiao Wen Lee
  • Patent number: 12211915
    Abstract: A semiconductor device includes a semiconductor substrate, a first gate oxide layer, and a first source/drain doped region. The first gate oxide layer is disposed on the semiconductor substrate, and the first gate oxide layer includes a main portion and an edge portion having a sloping sidewall. The first source/drain doped region is disposed in the semiconductor substrate and located adjacent to the edge portion of the first gate oxide layer. The first source/drain doped region includes a first portion and a second portion. The first portion is disposed under the edge portion of the first gate oxide layer in a vertical direction, and the second portion is connected with the first portion.
    Type: Grant
    Filed: March 1, 2023
    Date of Patent: January 28, 2025
    Assignee: UNITED MICROELECTRONICS CORP.
    Inventors: Ming-Hua Tsai, Jung Han, Ming-Chi Li, Chih-Mou Lin, Yu-Hsiang Hung, Yu-Hsiang Lin, Tzu-Lang Shih
  • Patent number: 12211842
    Abstract: A FinFET including a gate stack, a semiconductor fin embedded in the gate stack, a source and a drain disposed is provided. The semiconductor fin extends along a widthwise direction of the gate stack and has a first concave and a second concave exposed at sidewalls of the gate stack respectively. The source and drain are disposed at two opposite sides of the gate stack. The source includes a first portion in contact with and embedded in the first concave. The drain includes a second portion in contact with and embedded in the second concave. The first portion and the second portion are covered by the gate stack.
    Type: Grant
    Filed: October 14, 2020
    Date of Patent: January 28, 2025
    Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.
    Inventors: Che-Cheng Chang, Chih-Han Lin, Horng-Huei Tseng
  • Patent number: 12211927
    Abstract: A semiconductor device and method for fabricating a semiconductor device includes etch selectivity tuning to enlarge epitaxy process windows. Through modification of etching processes and careful selection of materials, improvements in semiconductor device yield and performance can be delivered. Etch selectivity is controlled by using dilute gas, using assistive etch chemicals, controlling a magnitude of bias power used in the etching process, and controlling an amount of passivation gas used in the etching process, among other approaches. A recess is formed in a dummy fin in a region of the semiconductor where epitaxial growth occurs to further enlarge the epitaxy process window.
    Type: Grant
    Filed: July 26, 2023
    Date of Patent: January 28, 2025
    Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.
    Inventors: Shih-Yao Lin, Te-Yung Liu, Chih-Han Lin
  • Publication number: 20250029550
    Abstract: A display panel and a pixel circuit thereof are provided. A pulse width signal generator turns on a charge sharing switch during a light-emitting period, and performs charge sharing with a control end of a positive feedback switch of a positive feedback circuit, so as to control the positive feedback switch to provide a positive feedback voltage to the pulse width signal generator to increase a voltage at an output end of the pulse width signal generator and thus to accelerate a rising speed of a voltage for controlling a driving current generator to provide a driving current.
    Type: Application
    Filed: July 16, 2024
    Publication date: January 23, 2025
    Applicant: AUO Corporation
    Inventors: Chih-Lung Lin, Yi-Jui Chen, Cheng-Han Ke, Ming-Yang Deng, Chia-Tien Peng
  • Patent number: 12205998
    Abstract: A device includes a substrate. A first channel region of a first transistor overlies the substrate and a source/drain region is in contact with the first channel region. The source/drain region is adjacent to the first channel region along a first direction, and the source/drain region has a first surface opposite the substrate and side surfaces extending from the first surface. A dielectric fin structure is adjacent to the source/drain region along a second direction that is transverse to the first direction, and the dielectric fin structure has an upper surface, a lower surface, and an intermediate surface that is disposed between the upper and lower surfaces. A silicide layer is disposed on the first surface and the side surfaces of the source/drain region and on the intermediate surface of the dielectric fin structure.
    Type: Grant
    Filed: January 14, 2022
    Date of Patent: January 21, 2025
    Assignee: Taiwan Semiconductor Manufacturing Co., Ltd.
    Inventors: Shih-Cheng Chen, Zhi-Chang Lin, Jung-Hung Chang, Chien-Ning Yao, Tsung-Han Chuang, Kuo-Cheng Chiang, Chih-Hao Wang
  • Patent number: 12206011
    Abstract: A method includes forming a dummy gate stack, etching the dummy gate stack to form an opening, depositing a first dielectric layer extending into the opening, and depositing a second dielectric layer on the first dielectric layer and extending into the opening. A planarization process is then performed to form a gate isolation region including the first dielectric layer and the second dielectric layer. The dummy gate stack is then removed to form trenches on opposing sides of the gate isolation region. The method further includes performing a first etching process to remove sidewall portions of the first dielectric layer, performing a second etching process to thin the second dielectric layer, and forming replacement gates in the trenches.
    Type: Grant
    Filed: July 19, 2023
    Date of Patent: January 21, 2025
    Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.
    Inventors: Shih-Yao Lin, Chih-Han Lin, Shu-Uei Jang, Ya-Yi Tsai, Shu-Yuan Ku
  • Publication number: 20250022854
    Abstract: Provide a micro-light-emitting package includes a first substrate, a plurality of micro-light-emitting diodes (micro-LEDs), a transparent protective layer, and a plurality of conductive pads. The first substrate has an upper surface and a lower surface opposite to each other. The micro-LEDs are disposed on the upper surface of the first substrate. The micro-LEDs have a first electrode and a second electrode electrically opposite to the first electrode. The transparent protective layer covers the micro-LEDs. The plurality of conductive pads are disposed on the lower surface of the first substrate. The conductive pads include a first conductive pad, a second conductive pad, a third conductive pad, and a fourth conductive pad. The first conductive pad, the second conductive pad, the third conductive pad respectively electrically connected to the corresponding first electrode of the micro-LEDs. The fourth conductive pad is commonly electrically connected to the second electrode of the plurality of micro-LEDs.
    Type: Application
    Filed: June 18, 2024
    Publication date: January 16, 2025
    Inventors: Chih-Hao LIN, Po-Han WU, Tsung-Hao SU, Wei-Yuan MA
  • Publication number: 20250022914
    Abstract: A method of forming a nanosheet FET is provided. A plurality of first and second semiconductor layers are alternately formed on a substrate. The first and second semiconductor layers are patterned into a plurality of stacks of semiconductor layers separate from each other by a space along a direction. Each stack of semiconductor layers has a cross-sectional view along the direction gradually widening towards the substrate. An epitaxial feature is formed in each of the spaces. The patterned second semiconductor layers are then removed from each of the stacks of semiconductor layers.
    Type: Application
    Filed: July 14, 2023
    Publication date: January 16, 2025
    Inventors: Kuei-Yu KAO, Shih-Yao LIN, Chiung-Yu CHO, Chen-Ping CHEN, Chih-Han LIN, Ming-Ching CHANG
  • Patent number: 12198984
    Abstract: A semiconductor device includes a plurality of semiconductor layers vertically separated from one another. The semiconductor device includes a gate structure that comprises a lower portion and an upper portion, wherein the lower portion wraps around each of the plurality of semiconductor layers. The semiconductor device includes a gate spacer that extends along a sidewall of the upper portion of the gate structure and has a bottom surface. A portion of the bottom surface of the gate spacer and a top surface of a topmost one of the plurality of semiconductor layers form an angle that is less than 90 degrees.
    Type: Grant
    Filed: January 30, 2024
    Date of Patent: January 14, 2025
    Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.
    Inventors: Kuei-Yu Kao, Chao-Cheng Chen, Chih-Han Lin, Chen-Ping Chen, Ming-Ching Chang, Shih-Yao Lin, Chih-Chung Chiu
  • Patent number: 12199151
    Abstract: A method of fabricating a semiconductor structure includes selective use of a cladding layer during the fabrication process to provide critical dimension uniformity. The cladding layer can be formed before forming a recess in an active channel structure or can be formed after filling a recess in an active channel structure with dielectric material. These techniques can be used in semiconductor structures such as gate-all-around (GAA) transistor structures implemented in an integrated circuit.
    Type: Grant
    Filed: January 30, 2024
    Date of Patent: January 14, 2025
    Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.
    Inventors: Kuei-Yu Kao, Shih-Yao Lin, Chen-Ping Chen, Chih-Han Lin, Ming-Ching Chang, Chao-Cheng Chen
  • Patent number: 12176415
    Abstract: A method includes forming an active channel region, forming a dummy channel region, forming a first gate dielectric layer over the active channel region, forming a second gate dielectric layer over the dummy channel region, removing the second gate dielectric layer from the dummy channel region, forming a gate isolation region over and contacting the dummy channel region, and forming a first gate stack and a second gate stack. The first gate stack is on the active channel region. The gate isolation region separates the first gate stack from the second gate stack.
    Type: Grant
    Filed: July 25, 2022
    Date of Patent: December 24, 2024
    Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.
    Inventors: Shih-Yao Lin, Chih-Han Lin
  • Patent number: 12176424
    Abstract: A method includes forming a first active fin structure and a second active fin structure on a substrate. A dummy fin structure is formed on the substrate, the dummy fin structure being interposed between the first active fin structure and the second active fin structure. The dummy fin structure is removed to expose a first portion of the substrate, the first portion of the substrate being disposed directly below the dummy fin structure. A plurality of protruding features is formed on the first portion of the substrate. A shallow trench isolation (STI) region is formed over the first portion of the substrate, the STI region covering the plurality of protruding features, at least a portion of the first active fin structure and at least a portion of the second active fin structure extending above a topmost surface of the STI region.
    Type: Grant
    Filed: February 14, 2022
    Date of Patent: December 24, 2024
    Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.
    Inventors: Che-Cheng Chang, Po-Chi Wu, Chih-Han Lin, Horng-Huei Tseng
  • Publication number: 20240421211
    Abstract: A method includes forming a dummy gate stack, etching the dummy gate stack to form an opening, depositing a first dielectric layer extending into the opening, and depositing a second dielectric layer on the first dielectric layer and extending into the opening. A planarization process is then performed to form a gate isolation region including the first dielectric layer and the second dielectric layer. The dummy gate stack is then removed to form trenches on opposing sides of the gate isolation region. The method further includes performing a first etching process to remove sidewall portions of the first dielectric layer, performing a second etching process to thin the second dielectric layer, and forming replacement gates in the trenches.
    Type: Application
    Filed: July 25, 2024
    Publication date: December 19, 2024
    Inventors: Shih-Yao Lin, Chih-Han Lin, Shu-Uei Jang, Ya-Yi Tsai, Shu-Yuan Ku
  • Patent number: 12166096
    Abstract: A semiconductor structure includes a semiconductor substrate; fin active regions protruded above the semiconductor substrate; and a gate stack disposed on the fin active regions; wherein the gate stack includes a high-k dielectric material layer, and various metal layers disposed on the high-k dielectric material layer. The gate stack has an uneven profile in a sectional view with a first dimension D1 at a top surface, a second dimension D2 at a bottom surface, and a third dimension D3 at a location between the top surface and the bottom surface, and wherein each of D1 and D2 is greater than D3.
    Type: Grant
    Filed: April 17, 2023
    Date of Patent: December 10, 2024
    Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.
    Inventors: Chi-Sheng Lai, Yu-Fan Peng, Li-Ting Chen, Yu-Shan Lu, Yu-Bey Wu, Wei-Chung Sun, Yuan-Ching Peng, Kuei-Yu Kao, Shih-Yao Lin, Chih-Han Lin, Pei-Yi Liu, Jing Yi Yan