Abstract: A method of forming a semiconductor device includes: forming a via in a first dielectric layer disposed over a substrate; forming a second dielectric layer over the first dielectric layer; forming an opening in the second dielectric layer, where the opening exposes an upper surface of the via; selectively forming a capping layer over the upper surface of the via, where the capping layer has a curved upper surface that extends above a first upper surface of the first dielectric layer distal from the substrate; after forming the capping layer, forming a barrier layer in the opening over the capping layer and along sidewalls of the second dielectric layer exposed by the opening; and filling the opening by forming an electrically conductive material over the barrier layer.

Abstract: An interconnect structure including a contact via in an interlayer dielectric, a first conductive feature in a first dielectric layer, the first dielectric layer over the interlayer dielectric, a first liner in the first dielectric layer, the first liner comprising a first part in contact with a sidewall surface of the first conductive feature, and a second part in contact with a bottom surface of the first conductive feature. The interconnect structure includes a first cap layer in contact with a top surface of the first conductive feature, a second conductive feature in a second dielectric layer, the second dielectric layer over the first dielectric layer, a second liner in the second dielectric layer, wherein the first and second conductive features comprise a first conductive material, and the contact via, first liner, first cap layer, and second liner comprise a second conductive material chemically different than the first conductive material.

Abstract: Embodiments provide a method and resulting structure that includes forming an opening in a dielectric layer to expose a metal feature, selectively depositing a metal cap on the metal feature, depositing a barrier layer over the metal cap, and depositing a conductive fill on the barrier layer.