Abstract: A semiconductor structure includes an isolation feature formed in the semiconductor substrate and a first fin-type active region. The first fin-type active region extends in a first direction. A dummy gate stack is disposed on an end region of the first fin-type active region. The dummy gate stack may overlie an isolation structure. In an embodiment, any recess such as formed for a source/drain region in the first fin-type active region will be displaced from the isolation region by the distance the dummy gate stack overlaps the first fin-type active region.

Abstract: A field effect transistor includes a substrate comprising a fin structure. The field effect transistor further includes an isolation structure in the substrate. The field effect transistor further includes a source/drain (S/D) recess cavity below a top surface of the substrate. The S/D recess cavity is between the fin structure and the isolation structure. The field effect transistor further includes a strained structure in the S/D recess cavity. The strain structure includes a lower portion. The lower portion includes a first strained layer, wherein the first strained layer is in direct contact with the isolation structure, and a dielectric layer, wherein the dielectric layer is in direct contact with the substrate, and the first strained layer is in direct contact with the dielectric layer. The strained structure further includes an upper portion comprising a second strained layer overlying the first strained layer.

Abstract: A thermoelectric conversion device includes at least one thermoelectric conversion unit. The thermoelectric conversion unit includes at least one first electrode, at least one second electrode, a P-type thermoelectric material, and an N-type thermoelectric material. The first electrode includes a first fluid channel, such that the first electrode has a first hollow structure. The second electrode includes a second fluid channel, such that the second electrode has a second hollow structure. The P-type thermoelectric material is located between the first electrode and the second electrode, and the second electrode is located between the P-type thermoelectric material and the N-type thermoelectric material.

Abstract: A method for forming a device package includes forming a molding compound around a plurality of dies and laminating a polymer layer over the dies. A top surface of the dies is covered by a film layer while the molding compound is formed, and the polymer layer extends laterally past edge portions of the dies. The method further includes forming a conductive via in the polymer layer, wherein the conductive via is electrically connected to a contact pad at a top surface of one of the dies.

Abstract: An integrated circuit transistor structure includes a semiconductor substrate, a first SiGe layer in at least one of a source area or a drain area on the semiconductor substrate, and a channel between the source area and the drain area. The first SiGe layer has a Ge concentration of 50 percent or more.

Abstract: A method for adjusting a page includes determining a selected page on a display device of the electronic device. An image of a user of the electronic device is acquired at a predetermined time interval using a camera module of the electronic device. A facial contour is recognized from the acquired image and a circumcircle of the recognized facial contour is computed. A reference circumcircle corresponding to a reference facial contour of the user is acquired from a storage device of the electronic device. According to the computed circumcircle and the reference circumcircle, an adjustment ratio of the selected page and an adjustment direction of the selected page are computed. According to the adjustment ratio and the adjustment direction of the selected page, the selected page is adjusted.

Abstract: A three-phase inverting apparatus and a control method and a paralleled power conversion system thereof are provided. The control method is suitable for controlling a three-phase inverter having a plurality of switch sets, a first inductor, a second inductor, and a third inductor. The control method includes following steps: obtaining a DC bus voltage, a plurality of phase voltages, and a plurality of phase currents; obtaining inductances of the first, the second, and the third inductors; calculating a plurality of switch duty ratios by a division-summation control means according to the DC bus voltage, the phase voltages, current variations of the phase currents, the inductances, and a switching cycle based on a sinusoidal pulse width modulation (SPWM); and generating corresponding control signals based on the switch duty ratios so as to control a switching of the switch sets.

Abstract: A telephone and an audio control method thereof are provided. The telephone includes a connector, a detecting circuit and an audio control unit. The connector connects an audio transceiver. The detecting circuit couples the connector, and generates a detecting voltage by detecting the audio transceiver through the connector. The audio controlling unit couples the detecting circuit and the connector. The audio control unit includes an analog-to-digital converter, an audio codec and a processing unit. The analog-to-digital converter is configured to covert the detecting voltage into a digital code. The audio codec provides at least two audio configurations. The processing unit identifies the audio transceiver according to the digital code, and controls the audio codec to switch to the audio configuration adapted to the identified audio transceiver to process audio data of the audio transceiver.

Abstract: A semiconductor device includes a gate stack overlying a substrate. The semiconductor device further includes a spacer on sidewalls of the gate stack, where a top surface of the spacer is above a top surface of the gate stack. Additionally, the semiconductor device includes a protection layer overlying the gate stack and filling at least a portion of a space surrounded by the spacer above the top surface of the gate stack. Furthermore, the semiconductor device includes a contact hole over the spacer, where the contact hole extends over the gate stack, and where a sidewall of the contact hole has a step-wise shape.

Abstract: The present invention discloses a slit nozzle cleaning device, the slit nozzle cleaning device comprises a scraper for cleaning the slit nozzle and an auxiliary inserting means, wherein the auxiliary inserting means is configured to guide the scraper into the slit nozzle. With the aid of the auxiliary inserting means, the scraper can enter the slit nozzle smoothly and precisely without the risk of breaking.

Abstract: A field effect transistor includes a substrate comprising a fin structure. The field effect transistor further includes an isolation structure in the substrate. The field effect transistor further includes a source/drain (S/D) recess cavity below a top surface of the substrate. The S/D recess cavity is between the fin structure and the isolation structure. The field effect transistor further includes a strained structure in the S/D recess cavity. The strain structure includes a lower portion. The lower portion includes a first strained layer, wherein the first strained layer is in direct contact with the isolation structure, and a dielectric layer, wherein the dielectric layer is in direct contact with the substrate, and the first strained layer is in direct contact with the dielectric layer. The strained structure further includes an upper portion comprising a second strained layer overlying the first strained layer.

Abstract: A touch display panel includes a substrate, a first metal layer, a second metal layer, common electrode pads, and a driving IC. The substrate includes a display area and a non-display area. The first metal layer disposed on the substrate includes gate lines and first metal wires, wherein the gate lines extend along a first direction. The second metal layer disposed on the substrate includes data lines and second metal wires, wherein the data lines extend along a second direction. The common electrode pads are disposed on the display area along the first direction and the second direction. The first metal wires and/or second metal wires are connected the common electrode pads and the driving IC. The first metal wires and/or second metal wires extend to the non-display area and extend to the display area along the first direction.

Abstract: A touch display panel includes: a common electrode; a first switching element connected between a voltage line and the common electrode; a data line transmitting a data signal during a display period and a touch sensing signal during a touch period; a pixel electrode; a second switching element connected between the data line and the pixel electrode; and a third switching element connected between the data line and the common electrode. During the display period, the first switching element and the second switching element are turned on and the third switching element is turned off. During the touch period, the first switching element and the second switching element are turned off and the third switching element is turned on.

Abstract: A touch display device comprising a touch display panel, a first de-multiplexer and a driving integrated circuit (IC) is provided. The touch display panel includes a plurality of first display data transmitting wires and a touch data transmitting wire. The first de-multiplexer includes a plurality of first output terminals and a first input terminal. The driving IC includes a multiplexer including a second output terminal. The first output terminals of the first de-multiplexer are electrically connected to the first display data transmitting wires and the touch data transmitting wire, respectively. The second output terminal of the multiplexer is electrically connected to the first input terminal of the first de-multiplexer through a first lead.

Abstract: A touch display panel includes common electrodes arranged along a first direction and a second direction, At least one common electrode having a first side and a second side parallel to the second direction, and metal wires extending parallel along the second direction. At least one common electrode is connected with one of the metal wires via at least a contact hole. The common electrodes include a first common electrode and a second common electrode that are adjacent in the first direction. The second side of the first common electrode is adjacent to the first side of the second electrode. The distance between the contact hole of the first common electrode and the second side of the first common electrode is equal to the distance between the contact hole of the second common electrode and the first side of the second common electrode.

Abstract: A touch display device is provided. The touch display device includes a first substrate; a transistor disposed over the first substrate; a first insulating layer disposed over the transistor; a first electrode disposed over the first insulating layer; a second insulating layer disposed over the first electrode; a conductive layer disposed over the second insulating layer, wherein the conductive layer includes a touch signal line; a third insulating layer disposed over the conductive layer; and a second electrode disposed over the third insulating layer, wherein one of the first electrode and the second electrode is electrically connected to the touch signal line, wherein another one of the first electrode and the second electrode is electrically connected to the transistor and at least partially overlaps the conductive layer.

Abstract: A touch display panel capable of operating in a display mode and a touch mode. In the touch mode, a data line transmits a data voltage signal to a pixel electrode of the touch display panel, and a corresponding common electrode is at a constant voltage level. In the touch mode, the data line transmits a touch driving signal to the pixel electrode and then receives a touch sensing signal from the pixel electrode, and the corresponding common electrode is floating.

Abstract: A touch display device is disclosed, which comprises: a substrate; a thin film transistor unit disposed on the substrate; a first insulating layer disposed on the thin film transistor unit; a touch signal line layer disposed on the first insulating layer; a second insulating layer disposed on the touch signal line layer; a first transparent conducting layer disposed on the second insulating layer; a third insulating layer disposed on the first transparent conducting layer; and a second transparent conducting layer disposed on the third insulating layer.

Abstract: A chayote fruit cell fluid, an extraction method of the chayote fruit cell fluid, a skincare and wrinkle-smoothing composition including the chayote fruit cell fluid and a method of preparing wrinkle-smoothing composition are disclosed. The extraction method of the chayote fruit cell fluid includes: squeezing a chayote fruit to obtain chayote fruit juice; filtering the chayote fruit juice for a first time; setting the filtered chayote fruit juice at room temperature for a period; and filtering the resultant chayote fruit juice for a second time to obtain the chayote fruit cell fluid. The method extracts the chayote fruit cell fluid from fresh chayote in a low-temperature process to provide better skincare and wrinkle-smoothing effects and maximize the natural activity of the chayote fruit.