Abstract: A device for treating a user's skin using plasma is provided. The device comprises a plasma generation assembly and a power supply. The plasma generation assembly comprises a discharge electrode including a first surface; a first dielectric material layer provided on the first surface of the discharge electrode and the first surface, a ground electrode surrounding the discharge electrode, and an insulation member spacing around the discharge electrode from the ground electrode. The power supply configured to apply power to the plasma generation assembly so that plasma is generated from the first surface of the discharge electrode to the ground electrode and between the first dielectric material layer and the user's skin.

Abstract: The present disclosure relates to a hybrid integrated circuit. In one implementation, an integrated circuit may have a first region with a first gate structure having a ferroelectric gate dielectric, at least one source associated with the first gate of the first region, and at least one drain associated with the first gate structure of the first region. Moreover, the integrated circuit may have a second region with a second gate structure having a high-? gate dielectric, at least one source associated with the second gate structure of the second region, and at least one drain associated with the second gate structure of the second region. The integrated circuit may further have at least one trench isolation between the first region and the second region.

Abstract: A device includes a transistor, a backside via, and a pair of sidewall spacers. The transistor includes a gate structure, a channel layer surrounded by the gate structure, and a first source/drain structure and a second source/drain structure connected to the channel layer. The backside via is under and connected to the first source/drain structure and includes a first portion, a second portion between the first portion and the first source/drain structure, and a third portion tapering from the first portion to the second portion in a cross-sectional view. The pair of sidewall spacers are on opposite sidewalls of the second portion of the backside via but not on opposite sidewalls of the first portion of the backside via.

Abstract: A first fin structure is disposed over a substrate. The first fin structure contains a semiconductor material. A gate dielectric layer is disposed over upper and side surfaces of the first fin structure. A gate electrode layer is formed over the gate dielectric layer. A second fin structure is disposed over the substrate. The second fin structure is physically separated from the first fin structure and contains a ferroelectric material. The second fin structure is electrically coupled to the gate electrode layer.

Abstract: Semiconductor structures and the manufacturing method thereof are disclosed. An exemplary semiconductor structure according to the present disclosure includes a substrate having a p-type well or an n-type well, a first base portion over the p-type well, a second base portion over the n-type well, a first plurality of channel members over the first base portion, a second plurality of channel members over the second base portion, an isolation feature disposed between the first base portion and the second base portion, and a deep isolation structure in the substrate disposed below the isolation feature.

Abstract: Some implementations described herein provide techniques and apparatuses for a fixture including a semiconductor die package and methods of formation. The semiconductor die package is mounted to an interposer. In addition to the semiconductor die package, the fixture includes a lid component having a top structure and footing structures that connect the lid component to the interposer. The fixture includes a thermal interface material between a top surface of the semiconductor die package and the top structure of the lid component. The footing structures, connected to the interposer using deposits of an epoxy material, provide increase a structural rigidity of the fixture relative to another fixture not including the footing structures.

Abstract: A semiconductor package including two different adhesives and a method of forming are provided. The semiconductor package may include a package component having a semiconductor die bonded to a substrate, a first adhesive over the substrate, a heat transfer layer on the package component, and a lid attached to the substrate by a second adhesive. The first adhesive may encircle the package component and the heat transfer layer. The lid may include a top portion on the heat transfer layer and the first adhesive, and a bottom portion attached to the substrate and encircling the first adhesive. A material of the second adhesive may be different from a material of the first adhesive.

Abstract: The present disclosure provides a method of forming a semiconductor device including an nFET structure and a pFET structure where each of the nFET and pFET structures include a semiconductor substrate and a gate trench. The method includes depositing an interfacial layer in each gate trench, depositing a first ferroelectric layer over the interfacial layer, removing the first ferroelectric layer from the nFET structure, depositing a metal oxide layer in each gate trench, depositing a second ferroelectric layer over the metal oxide layer, removing the second ferroelectric layer from the pFET structure, and depositing a gate electrode in each gate trench.

Abstract: A 3D image labeling device and a 3D image labeling method are provided. The 3D image labeling device includes a point cloud cluster module, a projection module, an integration module and a point cloud recovery module. The point cloud cluster module clusters multiple points of a 3D unlabeled image as one or more first point clusters according to a 3D unlabeled image and a cluster algorithm to generate a 3D clustered image. The projection module generates a first 2D image with first objects according to the 3D clustered image, wherein each first point cluster corresponds to one of the first objects. The integration module labels the first objects of the first 2D image according to one or more object frames of a 2D labeled image to generate a second 2D image. The point cloud recovery module generates a 3D labeled image according to the second 2D image.

Abstract: A 3D image labeling device and a 3D image labeling method are provided. The 3D image labeling device includes a point cloud cluster module, a projection module, an integration module and a point cloud recovery module. The point cloud cluster module clusters multiple points of a 3D unlabeled image as one or more first point clusters according to a 3D unlabeled image and a cluster algorithm to generate a 3D clustered image. The projection module generates a first 2D image with first objects according to the 3D clustered image, wherein each first point cluster corresponds to one of the first objects. The integration module labels the first objects of the first 2D image according to one or more object frames of a 2D labeled image to generate a second 2D image. The point cloud recovery module generates a 3D labeled image according to the second 2D image.

Abstract: An integrated circuit includes a scribe line, a bonding pad structure and an extension pad structure. The scribe line is disposed on a substrate, and the bonding pad structure and the extension pad structure are both disposed in a dielectric layer on the substrate. The bonding pad structure includes first vias disposed on first metal layers in the dielectric layer. The extension pad structure includes second metal layers and a number of the second metal layer is less than that of the first metal layers. Also, the bonding pad structure has a first region and a second region, and second vias is disposed on the second metal layers in the first region and no vias is disposed on the second metal layers in the second region.

Abstract: An integrated circuit includes a scribe line, a bonding pad structure and an extension pad structure. The scribe line is disposed on a substrate, and the bonding pad structure and the extension pad structure are both disposed in a dielectric layer on the substrate. The bonding pad structure includes first vias disposed on first metal layers in the dielectric layer. The extension pad structure includes second metal layers and a number of the second metal layer is less than that of the first metal layers. Also, the bonding pad structure has a first region and a second region, and second vias is disposed on the second metal layers in the first region and no vias is disposed on the second metal layers in the second region.

Abstract: A split contact structure includes a semiconductor substrate having a major surface; a first upwardly protruding structure disposed on the major surface; a first cell contact region in the major surface and being close to the first upwardly protruding structure; a second upwardly protruding structure disposed on the major surface; a second cell contact region in the major surface and being close to the second upwardly protruding structure; a first patterned layer stacked on the first upwardly protruding structure; a second patterned layer stacked on the first upwardly protruding structure; a first contact structure disposed on a sidewall of the first upwardly protruding structure and being in direct contact with the first cell contact region; and a second contact structure disposed on a sidewall of the second upwardly protruding structure and being in direct contact with the second cell contact region.

Abstract: A memory control system has an SDRAM device, a memory controller, a loading monitoring unit and a memory physical module. The SDRAM device has a plurality of SDRAM cells for storing data. The loading monitoring unit detects workload of a memory interface of the SDRAM device. The memory controller switches an operation condition of the memory system from a first condition to a second condition when the detected workload satisfies at least one predetermined criterion. The memory physical module is coupled between the SDRAM device and the memory controller and has an interface timing calibration circuit configured to adjust timing of signals of the memory interface such that the signals are adjusted in best timing location and data are captured with a great timing margin.

Abstract: Since high-frequency ultrasound provides the advantage of high spatial resolution, it has been applied to relevant fields of medical imaging research. Due to a lack of high-frequency ultrasonic transducer with array structure, the high-frequency ultrasonic transducer must be performed in a fixed depth of focus during scanning. A swept scanning method is typical for flow estimation. However, this method cannot provide the precise flow estimation within the irregular-shaped object, because the focal zone of the above-mentioned transducer just covers a specific depth of focus and the outside the focal area corresponds poor signal to noise ratio. To resolve this problem, the present invention provides a skin scanning method, which can move the transducer along a scanning route parallel to the contour of the irregular-shaped object during scanning. The scanning results show that the skin scanning method improves the accuracy of flow estimation.

Abstract: A DRAM structure has a substrate, a buried transistor with a fin structure, a trench capacitor, and a surface strap on the surface of the substrate. The surface strap is used to electrically connect a drain region to the trench capacitor.

Abstract: The invention discloses a method of forming a finFET device. A hard mask layer is formed on an active area of a semiconductor substrate. A portion of the hard mask layer is etched to form a recess. A conformal gate defining layer is deposited on the recess and a tilt angle ion implantation process is performed. A part of the gate defining layer is removed to define a fin pattern. The fin pattern is subsequently transferred to the hard mask layer. The patterned hard mask layer having the fin pattern is utilized as an etching mask, and the semiconductor substrate is etched to form a fin structure.

Abstract: The present invention discloses a structure of a buried word line, which comprises a semiconductor substrate having a U-shape trench, a U-shape gate dielectric layer in the U-shape trench, a polysilicon layer on the U-shape gate dielectric layer, a conducting layer on the polysilicon layer, and a cover dielectric layer on the conducting layer. The semiconductor structure may have a minimized size and when recess channels are formed thereby, the integration is accordingly improved without suffering from the short channel effect.

Abstract: A method for forming a surface strap includes forming a deep trench capacitor having a conductive connection layer on its surface in the substrate and the conductive connection layer in contact with the conductive layer; forming a poly-Si layer covering the pad layer and the conductive connection layer; performing a selective ion implantation with an angle to make part of the poly-Si layer an undoped poly-Si layer; removing the undoped poly-Si layer to expose part of the conductive connection layer; etching the exposed conductive connection layer to form a recess; removing the poly-Si layer to make the exposed conductive connection layer a conductive connection strap; filling the recess with an insulation material to form a shallow trench isolation; exposing the conductive layer; and selectively removing the conductive layer to form a first conductive strap which forms the surface strap together with the conductive connection strap.

Abstract: The invention discloses a method of forming a finFET device. A hard mask layer is formed on an active area of a semiconductor substrate. A portion of the hard mask layer is etched to form a recess. A conformal gate defining layer is deposited on the recess and a tilt angle ion implantation process is performed. A part of the gate defining layer is removed to define a fin pattern. The fin pattern is subsequently transferred to the hard mask layer. The patterned hard mask layer having the fin pattern is utilized as an etching mask, and the semiconductor substrate is etched to form a fin structure.