Abstract: Semiconductor structures and processes are provided. A semiconductor structure of the present disclosure includes a first base portion and a second base portion extending lengthwise along a first direction, a first source/drain feature disposed over the first base portion, a second source/drain feature disposed over the second base portion, a center dielectric fin sandwiched between the first source/drain feature and the second source/drain feature along a second direction perpendicular to the first direction, and a source/drain contact disposed over the first source/drain feature, the second source/drain feature and the center dielectric fin. A portion of the source/drain contact extends between the first source/drain feature and the second source/drain feature along the second direction.

Abstract: A light emitting diode device includes a substrate, a conductive via, first and second conductive pads, a driving chip, a flat layer, a redistribution layer, a light emitting diode, and an encapsulating layer. The substrate has a first surface and a second surface opposite thereto. The conductive via penetrates from the first surface to the second surface. The first and second conductive pads are respectively disposed on the first and second surface and in contact with the conductive via. The driving chip is disposed on the first surface. The flat layer is disposed over the first surface and covers the driving chip and the first conductive pad. The redistribution layer is disposed on the flat layer and electrically connects to the driving chip. The light emitting diode is flip-chip bonded to the redistribution layer. The encapsulating layer covers the redistribution layer and the light emitting diode.

Abstract: A semiconductor device structure includes a first dielectric wall, a plurality of first semiconductor layers vertically stacked and extending outwardly from a first side of the first dielectric wall, each first semiconductor layer has a first width, a plurality of second semiconductor layers vertically stacked and extending outwardly from a second side of the first dielectric wall, each second semiconductor layer has a second width, a plurality of third semiconductor layers disposed adjacent the second side of the first dielectric wall, each third semiconductor layer has a third width greater than the second width, a first gate electrode layer surrounding at least three surfaces of each of the first semiconductor layers, the first gate electrode layer having a first conductivity type, and a second gate electrode layer surrounding at least three surfaces of each of the second semiconductor layers, the second gate electrode layer having a second conductivity type opposite the first conductivity type.

Abstract: A semiconductor device includes a substrate, a first stack of semiconductor nanosheets, a second stack of semiconductor nanosheets, a gate structure and a first dielectric wall. The substrate includes a first fin and a second fin. The first stack of semiconductor nanosheets is disposed on the first fin. The second stack of semiconductor nanosheets is disposed on the second fin. The gate structure wraps the first stack of semiconductor nanosheets and the second stack of semiconductor nanosheets. The first dielectric wall is disposed between the first stack of semiconductor nanosheets and the second stack of semiconductor nanosheets. The first dielectric wall includes at least one neck portion between adjacent two semiconductor nanosheets of the first stack.

Abstract: The light emitting diode packaging structure includes a flexible substrate, a first adhesive layer, micro light emitting elements, a conductive pad, a redistribution layer, and an electrode pad. The first adhesive layer is disposed on the flexible substrate. The micro light emitting elements are disposed on the first adhesive layer and have a first surface facing to the first adhesive layer and an opposing second surface. The micro light emitting elements include a red micro light emitting element, a blue micro light emitting element, and a green micro light emitting element. The conductive pad is disposed on the second surface of the micro light emitting element. The redistribution layer covers the micro light emitting elements and the conductive pad. The electrode pad is disposed on the redistribution layer and is electrically connected to the circuit layer. A thickness of the flexible substrate is less than 100 um.

Abstract: A semiconductor structure includes spaced apart first and second fins over a substrate, a separating wall over the substrate and having opposite first and second wall surfaces, multiple first channel features extending away from the first wall surface over the first fin such that the first channel features are spaced apart, multiple second channel features extending away from the second wall surface over the second fin such that the second channel features are spaced apart, two spaced apart first epitaxial structures on the first fin such that each first channel feature interconnects the first epitaxial structures, two spaced apart second epitaxial structures on the second fin such that each second channel feature interconnects the second epitaxial structures, and a dielectric structure including at least one bottom dielectric portion separating at least one of the first and second epitaxial structures from a corresponding first and second fins.

Abstract: A semiconductor structure includes: a substrate; a first fin and a second fin disposed on the substrate and spaced apart from each other; a dielectric wall disposed on the substrate and having first and second wall surfaces; a third fin disposed on the substrate to be in direct contact with at least one of the first and second fins; a first device disposed on the first fin and including first channel features extending away from the first wall surface; a second device disposed on the second fin and including second channel features extending away from the second wall surface; at least one third device disposed on the third fin and including third channel features; and an isolation feature disposed on the substrate to permit the third device to be electrically isolated from the first and second devices. A method for manufacturing the semiconductor structure is also disclosed.

Abstract: Semiconductor structures and methods for manufacturing the same are provided. The semiconductor structure includes a first stack structure formed over a substrate, and the first stack structure includes a plurality of nanostructures that extend along a first direction. The semiconductor structure includes a second stack structure formed adjacent to the first stack structure, and the second stack structure includes a plurality of nanostructures that extend along the first direction. The semiconductor structure includes a first gate structure formed over the first stack structure, and the first gate structure extends along a second direction. The semiconductor structure also includes a dielectric wall between the first stack structure and the second stack structure, and the dielectric wall includes a low-k dielectric material, and the dielectric wall is connected to the first stack structure and the second stack structure.

Abstract: A low-temperature co-fired microwave dielectric ceramic material includes: (a) 85 wt % to 99 wt % ceramic material comprising Mg2SiO4, Ca2SiO4, CaTiO3, and CaZrO3, wherein a weight ratio of Mg2SiO4 relative to Ca2SiO4 is of (1?x):x, a weight ratio of CaTiO3 relative to CaZrO3 is of y:z, and a weight ratio of entities of Mg2SiO4 and Ca2SiO4 relative to CaTiO3 is of (1?y?z):y, 0.2?x?0.7, 0.05?y?0.2, 0.05?z?0.4; and (b) 1 wt % to 15 wt % glass material composed of Li2O, BaO, SrO, CaO, B2O3, and SiO2.

Abstract: A low-temperature co-fired microwave dielectric ceramic material includes: (a) 85 wt % to 99 wt % ceramic material comprising Mg2SiO4, Ca2SiO4, CaTiO3, and CaZrO3, wherein a weight ratio of Mg2SiO4 relative to Ca2SiO4 is of (1-x): x, a weight ratio of CaTiO3 relative to CaZrO3 is of y:z, and a weight ratio of entities of Mg2SiO4 and Ca2SiO4 relative to CaTiO3 is of (1-y-z):y, 0.2?x?0.7, 0.05?y?0.2, 0.05?z?0.4; and (b) 1 wt % to 15 wt % glass material composed of Li2O, BaO, SrO, CaO, B2O3, and SiO2.

Abstract: A low-temperature, high stability co-fired microwave dielectric composite of ceramic and glass, including 85-99 wt % microwave dielectric ceramic of formula [1-y-z[(1?x)Mg2SiO4?xCa2SiO4]?yCaTiO3?zCaZrO3, wherein 0.2?x?0.7,0.05?y?0.3 and 0.02?z?0.15], and 1 to 15 wt % with Li2O—BaO—SrO—CaO—B2O3—SiO2 glass respectively made at a low sintering temperature of ceramic for co-firing with Ag or Cu electrode, employing eutectic phase of ceramic oxides to reduce its melting temperature, a low melting-point glass material with high chemical stability as a sintering aid added to oxides and raw material powders of Li2O, BaO, SrO, CaO, B2O3 and SiO2, obtained by combining and melting the ingredients in the temperature range between 1000 to 1300° C., quenching and crashing, and then adding it to the main ceramic oxides to form the final composition. This ceramic/glass composite material may be co-fired with an Ag and Cu electrode at 900° C.-970° C. for 0.5-4 hours in a protective atmosphere.

Abstract: A Bluetooth data/control message transmission module, an interaction device and a method thereof are provided in the present invention. The Bluetooth data/control message transmission module connects to a mobile device with Bluetooth. The Bluetooth data/control message transmission module includes a process unit, a modulation module and a Bluetooth module. The process unit is for providing a digital data. The modulation module receives the digital data and modulates the digital data with a analog carrier signal to generate a modulation signal whose frequency is lower than 8 KHz. The Bluetooth module uses a headset profile to link with the mobile device, wherein the mobile device serves the Bluetooth module as a headset. The Bluetooth module samples the modulation signal, to serve the sampled modulation signal as a voice signal to send to the mobile device through the Bluetooth protocol.

Abstract: A method of manufacturing an organic-inorganic composite film is provided. The method includes co-sputtering an inorganic target and a fluorine-containing organic polymer target, thereby simultaneously depositing atoms from the inorganic target and atoms from the fluorine-containing organic polymer target on a substrate. As such, an organic-inorganic composite film is obtained. The organic-inorganic composite film includes a homogeneous, amorphous, and nonporous material composed of carbon, fluorine and/or chlorine, oxygen and/or nitrogen, and inorganic element M. The inorganic element M forms chemical bondings with carbon, fluorine, chlorine, oxygen and/or nitrogen, and wherein the bond length forms therefore is less than 2.78 ?.

Abstract: Disclosed is a method of manufacturing an organic-inorganic composite film. The method includes co-sputtering an inorganic target and a fluorine-containing organic polymer target, thereby simultaneously depositing atoms from the inorganic target and atoms from the fluorine-containing organic polymer target on a substrate. As such, an organic-inorganic composite film is obtained. The organic-inorganic composite film includes a homogeneous, amorphous, and nonporous material composed of carbon, fluorine, oxygen and/or nitrogen, and M. M can be silicon, titanium, aluminum, chromium, or combinations thereof.

Abstract: A Bluetooth data/control message transmission module, an interaction device and a method thereof are provided in the present invention. The Bluetooth data/control message transmission module connects to a mobile device with Bluetooth. The Bluetooth data/control message transmission module includes a process unit, a modulation module and a Bluetooth module. The process unit is for providing a digital data. The modulation module receives the digital data and modulates the digital data with a analog carrier signal to generate a modulation signal whose frequency is lower than 8 KHz. The Bluetooth module uses a headset profile to link with the mobile device, wherein the mobile device serves the Bluetooth module as a headset. The Bluetooth module samples the modulation signal, to serve the sampled modulation signal as a voice signal to send to the mobile device through the Bluetooth protocol.

Abstract: A system using detectable signals of panel for data communication includes the panel, at least one detectable signal detector, and a control unit. The panel has a surface for displaying an image. At least one area of the surface is used to display variation of a detectable signal. The at least one detectable signal detector is coupled to the at least one area for detecting the variation of the detectable signal in the at least one area and producing a corresponding detection signal. The control unit is connected to the at least one detectable signal detector for receiving the detection signal. Thus, the control unit can receive the data sent from the at least one area.

Abstract: A method for assisting in data calculation by using a display card: In the present method, input data stored in a system memory is transformed into texture data, which is then stored in a display memory of the display card. Then, a Graphic processing unit (GPU) of the display card is used for executing a texture calculation to the texture data, and a result of the texture calculation is stored in a display target of the display memory. Finally, the display target is outputted to the system memory as the output data. Accordingly, a part of calculation tasks of a central processing unit (CPU) can be given to the GPU of the display card when the CPU is in a high usage rate, so as to reduce a calculation burden of the CPU.

Abstract: A real time information display module and a method thereof are described. The real time information display module is coupled with a display device used for displaying TV signal. The real time information display module includes an information collection unit and an event detection unit. The information collection unit receives a setting instruction of an information category and collects share information corresponding to the information category according to a setting instruction. The event detecting module detects a TV event and an information event corresponding to the TV signal and the share information, respectively. When the TV event and information event exist at the same time, the real time information display module transmits a notification instruction to the display device. As a result, the display device retrieves and outputs the share information from the information collection module.

Abstract: The invention relates to a method for showing an electronic program guide (EPG) on a computer screen. The computer has EPG data, a desktop application and a TV play program. The method includes the following steps. First, the desktop application program is launched, and an application window is displayed on the screen. Then, the EPG data is retrieved, and program information which is played is shown in the application window. Then, a message showing that the program information is clicked is received. Afterward, the TV play program is launched, and the TV program corresponding to program information is played.

Abstract: A method for assisting in data calculation by using a display card is provided. In the present method, input data stored in a system memory is transformed into texture data, which is then stored in a display memory of the display card. Then, a Graphic processing unit (GPU) of the display card is used for executing a texture calculation to the texture data, and a result of the texture calculation is stored in a display target of the display memory. Finally, the display target is outputted to the system memory as the output data. Accordingly, a part of calculation tasks of a central processing unit (CPU) can be given to the GPU of the display card when the CPU is in a high usage rate, so as to reduce a calculation burden of the CPU.