Abstract: A computing device is electronically connectable to a peripheral device. The computing device may convert an image into a lighting control map and output the lighting control map to the peripheral device. The peripheral device controls lights on the peripheral device in a manner that causes the lights to illuminate in accordance with the lighting control map.

Abstract: A brush module for a rotary table includes: a housing, a brush unit, a first pushing unit and a second pushing unit, the brush unit includes a brush disposed in the housing, a conductive wire electrically connected to the brush, and a pushing force for pushing the brush towards the opening of the housing. The first and second pushing units oppositely provided on the housing provide the brush a first and a second pushing forces in opposite directions to resist the lateral thrust generated by friction between the brush and the rotary disk of the rotary table, thereby greatly reducing the vibration, shaking, slipping, line contact and other conditions of the brush caused by high-speed rotation of the rotary disk, avoiding damaging the peripheral surface of the rotary disk, and maintaining good electrical contact between the brush and the rotary disk.

Abstract: In order to maintain the white balance ratio of the mixed white light, a pixel unit is provided, which is composed of four sub-pixels of red, green, blue, and another green colors, and these sub-pixels are composed of a red LED element, a first green LED element, a blue LED element and a second green LED element. A control element is used to control the four sub-pixels of red, first green, blue and second green correspondingly by outputting control signals through the control channels. Base on the adjustment of the current, the brightness ratio of the above three colors is still maintained at the ratio of 3:6:1 of the white balance, and the ratio of the white balance of the white light after being mixed is also maintained.

Abstract: A quick conductor connector includes a receiving space recessed from a top of a main body, the receiving space having an annular stepped section formed around a top opening thereof with locating guide sections spaced thereon and sockets formed on a bottom thereof for receiving conductors therein; a locating member disposed on the annular stepped section and provided on inner and outer circumferential edges with stop sections and extensions, respectively; the extensions being extendable into the locating guide sections for guiding the locating member to rotate and change the positions of the stop sections relative to the annular stepped section; and a plug member including electrically conducting sections extendable into the sockets and electrically connected to the conductors, and limiting sections that can be blocked by the stop sections when the locating member is rotated to thereby prevent the plug member from sliding upward out of the receiving space.

Abstract: A semiconductor device includes a semiconductor substrate, a gate structure, strained layers, source/drain contact patterns, a gate contact via, and source/drain contact vias. The gate structure is disposed over the semiconductor substrate. The strained layers are disposed aside the gate structure. The source/drain contact patterns are disposed on and electrically connected to the strained layers. Top surfaces of the source/drain contact patterns are coplanar with a top surface of the gate structure. The gate contact via is disposed on and electrically connected to the gate structure. The source/drain contact vias are disposed on and electrically connected to the source/drain contact patterns.

Abstract: A method for manufacturing an interconnect structure includes: forming a first dielectric layer; forming a mask; patterning the first dielectric layer through the mask to form a trench, an inner surface of the trench having two first portions opposite to each other along an X direction, two second portions opposite to each other along a Y direction, and a bottom portion; forming a second dielectric layer over the mask and the patterned first dielectric layer, and along an inner surface of the trench; etching the second dielectric layer by directing an etchant in a predetermined direction such that a first part of the second dielectric layer on the two first portions and the bottom portion is removed, and a second part of the second dielectric layer on the second portions of the trench remains and is formed into two reinforcing spacers; and forming a trench-filling element.

Abstract: An information handling system has a camera disposed in a display device, and a privacy shutter configured to selectively rotate a polarizer to a first orientation or a second orientation. One of the first orientation or the second orientation is used to filter reflected polarized light.

Abstract: In some embodiments, an image sensor is provided. The image sensor includes a photodetector disposed in a semiconductor substrate. A wave guide filter having a substantially planar upper surface is disposed over the photodetector. The wave guide filter includes a light filter disposed in a light filter grid structure. The light filter includes a first material that is translucent and has a first refractive index. The light filter grid structure includes a second material that is translucent and has a second refractive index less than the first refractive index.

Abstract: A method for fabricating an integrated circuit device is provided. The method includes depositing a first dielectric layer; depositing a second dielectric layer over the first dielectric layer; etching a trench opening in the second dielectric layer, wherein the trench opening exposes a first sidewall of the second dielectric layer and a second sidewall of the second dielectric layer, the first sidewall of the second dielectric layer extends substantially along a first direction, and the second sidewall of the second dielectric layer extends substantially along a second direction different from the first direction in a top view; forming a via etch stop layer on the first sidewall of the second dielectric layer, wherein the second sidewall of the second dielectric layer is free from coverage by the via etch stop layer; forming a conductive line in the trench opening; and forming a conductive via over the conductive line.

Abstract: A plurality of holes in a top surface of a silicon medium form a plurality of sub-meta lenses to result in multiple focal points rather than a single point (resulting from using a single meta lens). As a result, optical paths for incoming light are reduced as compared with a single optical path associated with a single meta lens, which in turn reduces angular response of incident photons. Thus, a pixel sensor including the plurality of sub-meta lenses experiences improved light focus and greater signal-to-noise ratio. Additionally, dimensions of the pixel sensor are reduced (particularly a height of the pixel sensor), which allows for greater miniaturization of an image sensor that includes the pixel sensor.

Abstract: Various embodiments of the present application are directed towards an image sensor including a wavelength tunable narrow band filter, as well as methods for forming the image sensor. In some embodiments, the image sensor includes a substrate, a first photodetector, a second photodetector, and a filter. The first and second photodetectors neighbor in the substrate. The filter overlies the first and second photodetectors and includes a first distributed Bragg reflector (DBR), a second DBR, and a first interlayer between the first and second DBRs. A thickness of the first interlayer has a first thickness value overlying the first photodetector and a second thickness value overlying the second photodetector. In some embodiments, the filter is limited to a single interlayer. In other embodiments the filter further includes a second interlayer defining columnar structures embedded in the first interlayer and having a different refractive index than the first interlayer.

Abstract: A dummy gate electrode and a dummy gate dielectric are removed to form a recess between adjacent gate spacers. A gate dielectric is deposited in the recess, and a barrier layer is deposited over the gate dielectric. A first work function layer is deposited over the barrier layer. A first anti-reaction layer is formed over the first work function layer, the first anti-reaction layer reducing oxidation of the first work function layer. A fill material is deposited over the first anti-reaction layer.

Abstract: Provided is a circuit board structure including a substrate, a loop-wrapping ground layer, an insulating structure, a first build-up layer, a top wiring layer, a bottom wiring layer, a first conductive via, and a plurality of second conductive vias. The aforementioned structure defines a signal transmitting structure. An equivalent circuit of the signal transmitting structure at least includes a first equivalent circuit, a second equivalent circuit, a third equivalent circuit and a fourth equivalent circuit, which correspond to different uniform transmitting sections respectively. The first equivalent circuit, the second equivalent circuit, the third equivalent circuit and the fourth equivalent circuit are connected in series with each other according to an ABCD transmission matrix series connection principle.

Abstract: A semiconductor device includes a fin-shaped structure on the substrate, a shallow trench isolation (STI) around the fin-shaped structure, a single diffusion break (SDB) structure in the fin-shaped structure for dividing the fin-shaped structure into a first portion and a second portion; a first gate structure on the fin-shaped structure, a second gate structure on the STI, and a third gate structure on the SDB structure. Preferably, a width of the third gate structure is greater than a width of the second gate structure and each of the first gate structure, the second gate structure, and the third gate structure includes a U-shaped high-k dielectric layer, a U-shaped work function metal layer, and a low-resistance metal layer.

Abstract: A conversion control circuit controls plural stackable sub-converters which are coupled in parallel to generate an output power to a load. The conversion control circuit includes a current sharing terminal and a current sharing circuit. A current sharing signal is connected, in parallel, to the current sharing terminals. The current sharing circuit includes: configuration (1): the current sharing signal is generated only according to an inductor current corresponding to one of plural inductors of the plural stackable sub-converters; or configuration (2): the current sharing signal is generated according to plural inductor currents corresponding to plural inductors of plural activated phases of the plural stackable sub-converters, wherein a ratio of a portion of the current sharing signal generated by a master control circuit to a portion generated by one of the slave control circuits is k which relates to a difference between a total phase number and an activated phase number.

Abstract: A device includes a gate structure, first and second gate spacers, source/drain regions, a refill metal structure, and a first dielectric liner. The gate structure is on a substrate. The first and second gate spacers are on opposite sides of the gate structure, respectively. The source/drain regions are spaced part from the gate structure at least in part by the first and second gate spacers. The refill metal structure is on the gate structure and between the first and second gate spacers. The first di electric liner is atop the gate structure. The first dielectric liner interposes the refill metal structure and the first gate spacer.

Abstract: The present disclosure describes a semiconductor device having a dielectric structure between a source/drain (S/D) structure and a contact structure. The semiconductor device includes a S/D structure on a substrate, a dielectric structure on a top surface of the S/D structure, and a S/D contact structure on the S/D structure and the dielectric structure. A portion of the S/D contact structure is in contact with a top surface of the dielectric structure.

Abstract: A semiconductor device includes a semiconductor layer. A gate structure is disposed over the semiconductor layer. A spacer is disposed on a sidewall of the gate structure. A height of the spacer is greater than a height of the gate structure. A liner is disposed on the gate structure and on the spacer. The spacer and the liner have different material compositions.

Abstract: The present disclosure relates to an integrated chip including a substrate and a pixel. The pixel includes a photodetector. The photodetector is in the substrate. The integrated chip further includes a first inner trench isolation structure and an outer trench isolation structure that extend into the substrate. The first inner trench isolation structure laterally surrounds the photodetector in a first closed loop. The outer trench isolation structure laterally surrounds the first inner trench isolation structure along a boundary of the pixel in a second closed loop and is laterally separated from the first inner trench isolation structure. Further, the integrated chip includes a scattering structure that is defined, at least in part, by the first inner trench isolation structure and that is configured to increase an angle at which radiation impinges on the outer trench isolation structure.

Abstract: A wafer stacking process is provided in the present invention, including steps of forming a silicon oxide layer on a sacrificial carrier, bonding the silicon oxide layer with a dielectric layer on a front side of a silicon substrate, performing a thinning process on the back side of the silicon substrate to expose TSVs therewithin, bonding the back side of the silicon substrate with another silicon substrate, repeating the thinning process and the process of bonding another silicon substrate above so as to form a wafer stacking structure, and performing a removing process to completely remove the sacrificial carrier.