Abstract: The present disclosure describes a semiconductor device having a dielectric structure between a source/drain (S/D) structure and a contact structure. The semiconductor device includes a S/D structure on a substrate, a dielectric structure on a top surface of the S/D structure, and a S/D contact structure on the S/D structure and the dielectric structure. A portion of the S/D contact structure is in contact with a top surface of the dielectric structure.

Abstract: A semiconductor device includes a semiconductor layer. A gate structure is disposed over the semiconductor layer. A spacer is disposed on a sidewall of the gate structure. A height of the spacer is greater than a height of the gate structure. A liner is disposed on the gate structure and on the spacer. The spacer and the liner have different material compositions.

Abstract: The present disclosure relates to an integrated chip including a substrate and a pixel. The pixel includes a photodetector. The photodetector is in the substrate. The integrated chip further includes a first inner trench isolation structure and an outer trench isolation structure that extend into the substrate. The first inner trench isolation structure laterally surrounds the photodetector in a first closed loop. The outer trench isolation structure laterally surrounds the first inner trench isolation structure along a boundary of the pixel in a second closed loop and is laterally separated from the first inner trench isolation structure. Further, the integrated chip includes a scattering structure that is defined, at least in part, by the first inner trench isolation structure and that is configured to increase an angle at which radiation impinges on the outer trench isolation structure.

Abstract: A wafer stacking process is provided in the present invention, including steps of forming a silicon oxide layer on a sacrificial carrier, bonding the silicon oxide layer with a dielectric layer on a front side of a silicon substrate, performing a thinning process on the back side of the silicon substrate to expose TSVs therewithin, bonding the back side of the silicon substrate with another silicon substrate, repeating the thinning process and the process of bonding another silicon substrate above so as to form a wafer stacking structure, and performing a removing process to completely remove the sacrificial carrier.

Abstract: A semiconductor device includes a first transistor and a second transistor. The first transistor includes: a first source and a first drain separated by a first distance, a first semiconductor structure disposed between the first source and first drain, a first gate electrode disposed over the first semiconductor structure, and a first dielectric structure disposed over the first gate electrode. The first dielectric structure has a lower portion and an upper portion disposed over the lower portion and wider than the lower portion. The second transistor includes: a second source and a second drain separated by a second distance greater than the first distance, a second semiconductor structure disposed between the second source and second drain, a second gate electrode disposed over the second semiconductor structure, and a second dielectric structure disposed over the second gate electrode. The second dielectric structure and the first dielectric structure have different material compositions.

Abstract: Provide a micro-light-emitting package includes a first substrate, a plurality of micro-light-emitting diodes (micro-LEDs), a transparent protective layer, and a plurality of conductive pads. The first substrate has an upper surface and a lower surface opposite to each other. The micro-LEDs are disposed on the upper surface of the first substrate. The micro-LEDs have a first electrode and a second electrode electrically opposite to the first electrode. The transparent protective layer covers the micro-LEDs. The plurality of conductive pads are disposed on the lower surface of the first substrate. The conductive pads include a first conductive pad, a second conductive pad, a third conductive pad, and a fourth conductive pad. The first conductive pad, the second conductive pad, the third conductive pad respectively electrically connected to the corresponding first electrode of the micro-LEDs. The fourth conductive pad is commonly electrically connected to the second electrode of the plurality of micro-LEDs.

Abstract: An electronic device, including a sensing substrate, a scintillator layer, and an adjustable reflective layer, is provided. The scintillator layer is disposed on the sensing substrate. The adjustable reflective layer is disposed on the sensing substrate and includes a first electrode, a second electrode, and an electrophoretic layer. The first electrode is disposed on the scintillator layer. The second electrode is disposed on the first electrode. The electrophoretic layer is disposed between the first electrode and the second electrode. The second electrode surrounds the scintillator layer.

Abstract: An electronic device, including a scintillator layer, a sensor, and a filter, is provided. The sensor overlaps the scintillator layer and includes a first sensing unit and a second sensing unit. The filter includes a first filter unit overlapping the first sensing unit and a second filter unit overlapping the second sensing unit, and the first filter unit and the second filter unit have different thicknesses.

Abstract: An electronic device is provided. The electronic device includes a substrate, an active element, a first insulation layer, and a detection element. An active element is disposed on the substrate. A first insulation layer is disposed on the active element. A detection element is disposed on the first insulation layer. The detection element comprises a lower electrode disposed on the first insulation layer, an active layer disposed on the lower electrode, an upper electrode disposed on the active layer, and the lower electrode is a part of a conductive layer. The first insulation layer has a recess, and the recess does not overlap with the conductive layer in a normal direction of the substrate.

Abstract: Disclosed is a method for manufacturing a detection panel, which includes the following steps. A first flexible board is provided, and the first flexible board has a circuit layer. A second flexible board is provided, the first flexible board is fixed on the second flexible board, and the first flexible board is disposed between the circuit layer and the second flexible board. A carrier board is provided, the carrier board is fixed on the second flexible board, and the second flexible board is disposed between the carrier board and the first flexible board. A scintillator is formed on the circuit layer. The carrier board is detached from the second flexible board. The first flexible board and the second flexible board are cut to form the detection panel.

Abstract: A projection device includes a housing and a bracket assembly. The housing has a first side wall and a second side wall connected to each other, the first side wall has a connecting portion and a limit groove, the limit groove has a curved section and a linear section connected to each other. The second side wall has a projection hole. The bracket assembly includes an adapter and a bracket. The adapter is movably connected to the connecting portion. The bracket is pivotally connected to the adapter and has a limit post extending into the limit groove. When the limit post moves to the linear section, the adapter is adapted to move in the connecting portion and drives the limit post to move in the linear section, so the bracket can be closer to the projection hole and the effect of covering the projection hole by the bracket is improved.

Abstract: An X-ray device, including a sensor panel and a flexible scintillator structure disposed on the sensor panel, is provided. A manufacturing method of the X-ray device is also provided.

Abstract: An X ray device, including an array substrate, a scintillator layer, a first adhesion layer, a function film, and a second adhesion layer, is provided. The scintillator layer is disposed on the array substrate. The first adhesion layer is disposed between the scintillator layer and the array substrate. The function film is disposed on the array substrate. The second adhesion layer is disposed between the function film and the array substrate. The function film covers the scintillator layer.

Abstract: A fastener is adapted for assembling a first housing to a second housing. The first housing is provided with a protruding portion and a buckling portion, and the second housing has a first surface, a second surface, and a through hole. The fastener includes a first portion, at least one connecting portion, at least two elastic portions, and a second portion. The first portion movably abuts against the first surface and has a first opening. The connecting portion is accommodated in the through hole. One end of the connecting portion is connected to the first portion. The connecting portion is spaced apart from an inner edge of the second housing by a gap. The two elastic portions inclinedly extend into the first opening. The second portion movably abuts against the second surface and is disposed at the another end of the connecting portion.

Abstract: A circuit for sensing an X-ray including a switching element, a storage element, a sensing element and a branching element. The storage element electrically coupled to the switching element. The sensing element electrically coupled to the switching element. The branching element electrically coupled between the storage element and the sensing element.

Abstract: An X ray device, including an array substrate, a scintillator layer, a first adhesion layer, a function film, and a second adhesion layer, is provided. The scintillator layer is disposed on the array substrate. The first adhesion layer is disposed between the scintillator layer and the array substrate. The function film is disposed on the array substrate. The second adhesion layer is disposed between the function film and the array substrate. The function film covers the scintillator layer.

Abstract: An X-ray device, including a sensor panel and a flexible scintillator structure disposed on the sensor panel, is provided. A manufacturing method of the X-ray device is also provided.

Abstract: A radiation-sensing device is provided. The radiation-sensing device includes a substrate, a first scintillator layer, a second scintillator layer, and an array layer. The first scintillator is disposed on a first side of the substrate, and includes a plurality of first blocking walls and a plurality of first scintillator elements. The plurality of first scintillator elements are located between the plurality of first blocking walls. The second scintillator layer is disposed on a second side of the substrate, and the second side is opposite to the first side. The array layer is located between the first scintillator layer and the second scintillator layer, and has a plurality of photosensitive elements. In addition, a projection of at least one of the plurality of first blocking walls on the substrate overlaps with a projection of at least one of the plurality of photosensitive elements on the substrate.

Abstract: An X-ray device including a sensing panel is provided. The sensing panel includes a first pixel and a second pixel. The second pixel is disposed adjacent to the first pixel in a top view direction. The first pixel includes a first photoelectric conversion layer. The second pixel includes a second photoelectric conversion layer. The first photoelectric conversion layer and the second photoelectric conversion layer belong to different layers.

Abstract: A radiation sensing device is provided in the present disclosure. The radiation sensing device includes a substrate and a plurality of semiconductor units. The semiconductor units are disposed on the substrate, and at least one of the semiconductor units includes a first gate electrode, an active layer, and a second gate electrode. The active layer is disposed on the first gate electrode, and the second gate electrode is disposed on the active layer. The second gate electrode has a positive bias voltage during a standby mode. The second electrode may be configured to have a positive bias voltage during the standby mode for improving influence on electrical properties of the semiconductor unit after the semiconductor unit is irradiated by radiation.