Abstract: An arrangement for supporting one or more bearings of a crankshaft assembly of a hydraulic fracturing pump includes a frame and one or more bearing supports. The frame is of a first material and defines one or more bearing support profiles. The bearing supports are of a second material different from the first material of the frame. The bearing supports are cast-in-place within the corresponding bearing support profiles of the frame and are configured to be in contact with an outer race of the corresponding bearings of the crankshaft assembly. Compared to the first material of the frame, the second material of the bearing supports is more effective at preventing slippage of the bearings.

Abstract: A method for forming a semiconductor structure is provided. The method includes forming a contact feature over an insulating layer, forming a first passivation layer over the contact feature, and etching the first passivation layer to form a trench exposing the contact feature. The method also includes forming an oxide layer over the contact feature and the first passivation layer and in the trench, forming a first non-conductive structure over the oxide layer, and patterning the first non-conductive structure to form a gap. The method further includes filling a conductive material in the gap to form a first conductive feature. The first non-conductive structure and the first conductive feature form a first bonding structure. The method further includes attaching a carrier substrate to the first bonding structure via a second bonding structure over the carrier substrate.

Abstract: Semiconductor devices having dummy regions with dummy fill structures that vary in lateral dimensions and methods for forming the semiconductor devices are provided herein. The semiconductor devices may include a through silicon via extending through a substrate of the semiconductor device, an active device in or on the substrate, and a dummy region of the substrate separating the through silicon via and the active device, the dummy region including dummy fill structures, wherein the dummy fill structures have lateral dimensions measured in a first direction from the through silicon via to the active device, wherein the lateral dimensions of the dummy fill structures varying in the first direction.

Abstract: A method includes forming first nanostructures over a first region of a substrate; forming second nanostructures over a second region of the substrate; forming first gate structures around the first nanostructures; replacing the second nanostructures with isolation regions; and forming a seal ring over the substrate, wherein the seal ring is between the first region and the second region.

Abstract: An embodiment is a device including a first die and a substrate including a first surface and a second surface opposite the first surface. The device also includes an active device on the first surface of the substrate. The device also includes a first interconnect structure on the first surface of the substrate. The device also includes a through substrate via extending through the first interconnect structure and the substrate to the second surface of the substrate, the through substrate via being electrically coupled to metallization patterns in the first interconnect structure. The device also includes one or more material-filled trench structures extending from the second surface of the substrate into the substrate, the one or more material-filled trench structures being electrically isolated from the through substrate via.

Abstract: A method includes forming a device die including forming integrated circuits on a semiconductor substrate; and forming a thermally conductive pillar extending into the semiconductor substrate. A cooling medium is attached over and contacting the semiconductor substrate to form a package, wherein the cooling medium is thermally coupled to the thermally conductive pillar.

Abstract: An arrangement for supporting one or more bearings of a crankshaft assembly of a hydraulic fracturing pump includes a frame and one or more bearing supports. The frame is of a first material and defines one or more bearing support profiles. The bearing supports are of a second material different from the first material of the frame. The bearing supports are cast-in-place within the corresponding bearing support profiles of the frame and are configured to be in contact with an outer race of the corresponding bearings of the crankshaft assembly. Compared to the first material of the frame, the second material of the bearing supports is more effective at preventing slippage of the bearings.

Abstract: A pump assembly may include a bearing housing having a bore. The pump assembly may include a connecting rod connected to the bearing housing at a first end of the connecting rod and connected to a crosshead at a second end of the connecting rod via a wrist pin. The connecting rod may include a lubrication channel that extends within the connecting rod. The pump assembly may include a shell bearing in the bore of the bearing housing, the shell bearing having an inner surface and an outer surface. A portion of the inner surface of the shell bearing that contacts the crankshaft in a forward stroke of the crosshead may be uninterrupted by a groove or an aperture configured to direct lubrication fluid to the lubrication channel of the connecting rod.