Patents by Inventor Chih Hau CHEN

Chih Hau CHEN has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Publication number: 20240329113
    Abstract: A redistribution structure is provided. A redistribution structure according to the present disclosure includes a first dielectric layer, a mesh metal feature disposed in the first dielectric layer and including a base portion and a frame portion surrounding the base portion, a second dielectric layer disposed over the first dielectric layer and the mesh metal feature, a redistribution feature disposed over the second dielectric layer, a passivation structure disposed over the redistribution feature and the second dielectric layer, a pad opening extending through the passivation structure to expose a top surface of the redistribution feature. The redistribution feature includes a plurality of contact vias that extend through the second dielectric layer to land on the frame portion of the mesh metal feature.
    Type: Application
    Filed: July 25, 2023
    Publication date: October 3, 2024
    Inventors: Chih-Pin Chiu, Zhen De Ma, Lee-Wen Hsu, Liang-Wei Wang, Dian-Hau Chen
  • Publication number: 20240312840
    Abstract: Through via structures and methods of fabrication thereof are disclosed herein. An exemplary method includes forming a trench that extends through an insulation layer and into a substrate. The substrate has a first side (e.g., frontside) and a second side (e.g., backside). The insulation layer is disposed over the first side of the substrate. The method includes filling the trench with a dielectric material and performing a thinning process on the second side of the substrate that exposes the dielectric material. After the thinning process and removing the dielectric material from the trench, the method includes forming an electrically conductive structure (e.g., a barrier liner that wraps an electrically conductive plug) in the trench that extends through the substrate from the first side to the second side. A portion of the barrier liner that forms a top of the electrically conductive structure is disposed in the insulation layer.
    Type: Application
    Filed: July 10, 2023
    Publication date: September 19, 2024
    Inventors: Lee-Wen Hsu, Liang-Wei Wang, Chih-Pin Chiu, Dian-Hau Chen
  • Publication number: 20240309740
    Abstract: An arrangement for supporting one or more bearings of a crankshaft assembly of a hydraulic fracturing pump includes a frame and one or more bearing supports. The frame is of a first material and defines one or more bearing support profiles. The bearing supports are of a second material different from the first material of the frame. The bearing supports are cast-in-place within the corresponding bearing support profiles of the frame and are configured to be in contact with an outer race of the corresponding bearings of the crankshaft assembly. Compared to the first material of the frame, the second material of the bearing supports is more effective at preventing slippage of the bearings.
    Type: Application
    Filed: March 16, 2023
    Publication date: September 19, 2024
    Applicant: SPM Oil & Gas Inc.
    Inventors: Chandu Kumar, Johnny Eric DeLeon, II, Jeffrey Haiderer, Chih Hau Chen
  • Publication number: 20240282837
    Abstract: A first conductive pad disposed over a first side of a substrate in a first direction. A second conductive pad is disposed over a second side of the substrate in the first direction. A through-substrate via (TSV) extends into the substrate in the first direction. The TSV is disposed between the first conductive pad and the second conductive pad in the first direction. An air liner disposed between the TSV and the substrate in a second direction different from the first direction.
    Type: Application
    Filed: June 15, 2023
    Publication date: August 22, 2024
    Inventors: Kuan-Hsun Wang, Tsung-Chieh Hsiao, Chih Hsin Yang, Liang-Wei Wang, Dian-Hau Chen
  • Patent number: 12063790
    Abstract: Semiconductor device and methods of forming the same are provided. A semiconductor device according to one embodiment includes a first source/drain feature and a second source/drain feature, a first metal line disposed in a first dielectric layer and electrically connected to the first source/drain feature, a second metal line disposed in the first dielectric layer and electrically connected to the second source/drain feature, and a first memory element disposed over the first dielectric layer and electrically connected to the first source/drain feature by way of the first metal line. A width of the first metal line is different from a width of the second metal line. By changing the widths of the first metal line and the second metal line, a source line series resistance of a semiconductor device can be advantageously reduced without changing a pitch of two metal lines.
    Type: Grant
    Filed: August 30, 2021
    Date of Patent: August 13, 2024
    Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.
    Inventors: Chih-Fan Huang, Wen-Chiung Tu, Liang-Wei Wang, Dian-Hau Chen, Yen-Ming Chen
  • Patent number: 12057419
    Abstract: A method for forming a chip structure is provided. The method includes providing a semiconductor substrate, a first conductive line, and a first dielectric layer. The method includes forming a first conductive layer over the first dielectric layer. The method includes forming a second conductive layer over the first conductive layer. The method includes forming a second dielectric layer over the second conductive layer and the first conductive layer. The method includes forming a first through hole passing through the second dielectric layer, the first conductive layer, and the first dielectric layer. The method includes forming a first conductive structure in and over the first through hole.
    Type: Grant
    Filed: July 26, 2022
    Date of Patent: August 6, 2024
    Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.
    Inventors: Chih-Fan Huang, Mao-Nan Wang, Hui-Chi Chen, Dian-Hau Chen, Yen-Ming Chen
  • Publication number: 20240258177
    Abstract: Embodiments of the present disclosure relate to methods for warpage correction. Particularly, embodiments of the present disclosure relate to substrate level warpage correction by depositing one or more warpage correction layers in a redistribution layer (RDL) structure, a front side warpage correction layer, and/or a back side warpage correction layer. In some embodiments, the warpage correction layer is a high stress dielectric layer. Characteristics of the warpage correction layer, such as stress level, and thickness, may be determined according to the substrate level warpage and the die level packaging scheme using an auto process control program.
    Type: Application
    Filed: January 31, 2023
    Publication date: August 1, 2024
    Inventors: Tsung-Chieh HSIAO, Chih Hsin YANG, Dian-Hau CHEN
  • Publication number: 20240254987
    Abstract: A pump assembly may include a bearing housing having a bore. The pump assembly may include a connecting rod connected to the bearing housing at a first end of the connecting rod and connected to a crosshead at a second end of the connecting rod via a wrist pin. The connecting rod may include a lubrication channel that extends within the connecting rod. The pump assembly may include a shell bearing in the bore of the bearing housing, the shell bearing having an inner surface and an outer surface. A portion of the inner surface of the shell bearing that contacts the crankshaft in a forward stroke of the crosshead may be uninterrupted by a groove or an aperture configured to direct lubrication fluid to the lubrication channel of the connecting rod.
    Type: Application
    Filed: December 14, 2023
    Publication date: August 1, 2024
    Applicant: SPM Oil & Gas Inc.
    Inventors: John S. MARQUEZ, Alireza ATABAIE, John MCCRADY, Chandu KUMAR, Chih Hau CHEN