Abstract: Embodiments of the present disclosure provide a semiconductor device with backside source/drain contacts formed using a buried source/drain feature and a semiconductor cap layer formed between the buried source/drain feature and a source/drain region. The buried source/drain feature and the semiconductor cap layer enable self-aligned backside source/drain contact and backside isolation. The semiconductor cap layer functions as an etch stop layer during backside contact formation while enabling source/drain region growth without fabrication penalty, such as voids in the source/drain regions.

Abstract: A method for forming a semiconductor device structure is provided. The method includes forming a gate stack over a substrate. The substrate has a base and a multilayer structure over the base, and the gate stack wraps around the multilayer structure. The method includes partially removing the multilayer structure, which is not covered by the gate stack. The multilayer structure remaining under the gate stack forms a multilayer stack, and the multilayer stack includes a sacrificial layer and a channel layer over the sacrificial layer. The method includes partially removing the sacrificial layer to form a recess in the multilayer stack. The method includes forming an inner spacer layer in the recess and a bottom spacer over a sidewall of the channel layer. The method includes forming a source/drain structure over the bottom spacer. The bottom spacer separates the source/drain structure from the channel layer.

Abstract: An integrated circuit includes a substrate having a semiconductor layer. The integrated circuit includes a transistor. The transistor includes stacked channels above the semiconductor layer, a first source/drain region in contact with the channels, and a second source/drain region in contact with the channels. A backside source/drain contact is positioned in the substrate directly below and electrically coupled to the first source/drain region. A frontside source/drain contact is directly above and electrically coupled to the first source/drain region. A bottom semiconductor structure is positioned below the second source/drain region and in contact with the semiconductor layer.

Abstract: A projection apparatus, an illumination module and a color-level correcting method therefor are provided. The projection apparatus comprises a projection lens, an imaging unit and an illumination module. The illumination module comprises a light source, a color wheel and a controlling unit. The light source provides a light beam. The color wheel is disposed on an optical path of the light beam and the controlling unit is connected to the color wheel and the imaging unit. A plurality of color wheel indices is stored in the controlling unit. When the projection apparatus receives an image signal, the controlling unit selects one of the color wheel indices according to the received image signal and controls the imaging unit according to the selected color wheel index. The projection apparatus automatically selects the corresponding color wheel index according to the received image signal for projecting an image with good tints and color-level performance.

Abstract: A zoomable projection apparatus including a projection system, an optical zoom adjusting device and a zoom ratio readout device is provided. The projection system at least includes a zoom lens set and an image control device. The optical zoom adjusting device is connected with the zoom lens set for adjusting an optical zoom ratio of the zoom lens set. The zoom ratio readout device can be connected to or disposed around the zoom lens set and is connected with the image control device for displaying the optical zoom ratio of the zoom lens set in an image projected by the projection system via the image control device.

Abstract: A color wheel calibrating method being adapted for determining an optimum color wheel index of a color wheel of a projection apparatus is provided. The projection apparatus includes a light source, a control unit and a color wheel. The color wheel calibrating method includes the steps of: first, inputting a roughly estimated color wheel index to the control unit for controlling the rotation of the color wheel; measuring the luminance of the light beam emitted from the light source after passing through the color wheel and getting a testing waveform; comparing the testing waveform with an optimum waveform and adjusting the roughly estimated color wheel index till the testing waveform approaching the optimum waveform and thereby obtaining the optimum color wheel index.