Patents by Inventor Chih-Hsiang Chi

Chih-Hsiang Chi has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Method of formation for a via opening
    Patent number: 6127276
    Abstract: A method for forming a via opening includes first an oxide layer formed over a metal layer. Next, a first stage via opening is formed on the oxide layer by photolithography and dry etching. Then, a wet etching process is performed on the first stage via opening to form a completed via opening to just exposes the metal layer and widen the width of the via opening.
    Type: Grant
    Filed: August 24, 1998
    Date of Patent: October 3, 2000
    Assignee: United Microelectronics Corp
    Inventors: Shih-Yao Lin, Chih-Hsiang Chi