Abstract: The present disclosure provides a semiconductor device and a method of forming the same. A method according to one embodiment includes forming a plurality of fins protruding from a substrate, forming first and second dummy gate stacks over the fins, and depositing a cover structure over the fins. A first portion of the cover structure extends between the first and second dummy gate stacks. The method also includes etching the fins to form a first trench between the first dummy gate stack and the first portion of the cover structure and a second trench between the second dummy gate stack and the first portion of the cover structure, removing the cover structure, epitaxially growing a first epitaxial feature from the first trench and a second epitaxial feature from the second trench. The first and second epitaxial features merge after rising above a top surface of the fins.

Abstract: A semiconductor structure a method of fabricating thereof including a substrate having a device region and a dummy region. A first active region is disposed over the substrate in the device region and a second active region is over the substrate in the dummy region. A first operational gate structure over the first active region and a first non-operational gate structure over the second active region. A first epitaxial region of an n-type dopant is adjacent the first operation gate structure; and a second epitaxial region of an n-type dopant is adjacent the first non-operational gate structure.

Abstract: A semiconductor structure includes a first circuit area having first fin active regions extending lengthwise along a first direction, each of the first fin active regions includes first channel regions; a second circuit area having second fin active regions extending lengthwise along the first direction, each of the second fin active regions includes second channel regions; a gate connector area between and separating the first and the second circuit areas, the gate connector area having filter fins extending lengthwise along the first direction; and a gate structure extending across the first circuit area, the gate connector area, and the second circuit area along a second direction over the first and second channel regions and the filter fins. A portion of the gate structure in the gate connector area has a greater resistivity than portions of the gate structure in the first and the second circuit areas.

Abstract: Embodiments of the present disclosure provide a FinFET semiconductor including a first set of fin structures that are active, a source/drain (S/D) region in contact with the first set of fin structures, a second set of fin structures separated, via a shallow trench isolation (STI) feature, from the first set of fin structures, a contact etch stop layer (CESL) over the S/D region and over the second set of fin structures, and a gate over the first set of fin structures and over the second set of fin structures, the gate including a gate dielectric and a gate electrode over the gate dielectric. The second set of fin structures includes one or more non-active fin structures that are in contact with the CESL without being in contact with the S/D region.

Abstract: Semiconductor devices are provided. In one example, a semiconductor device includes: a substrate, a first circuit region and a second circuit region extending in a first direction, and a gate structure extending in a second direction that is substantially perpendicular to the first direction. The gate structure further includes: two gate electrode sections respectively located in the first and second circuit regions, and a low-resistance section between and interconnecting the two gate electrode sections. The two gate electrode sections are configured as gate electrodes for two transistors respectively located in the first and second circuit regions. The two gate electrodes have a first width (W0) along the first direction, the low-resistance section has a second width (W) along the first direction, and a ratio of W to W0 (W/W0) is at least 1.1.

Abstract: A laser illumination system and a method for eliminating laser speckles thereof are revealed. The laser illumination system includes laser module emitting a laser beam, a scanning unit for scanning the laser beam to form scanning beams, and a diffractive optical element which the scanning beams are passed through to form illuminating beams that are projected to an area to be illuminated or an object. Thus an image detecting unit can capture an image of the area or the object. The scanning beams are converted into the illuminating beams by the diffractive optical element that causes changes in spatial phase redistribution or light energy distribution thereof. One point in the area or on the object shows energy of partial light of at least two of the laser beams. Thus a laser speckle of the image can be eliminated by the superposition of the energy of the partial light.

Abstract: A laser illumination system and a method for eliminating laser speckles thereof are revealed. The laser illumination system includes laser module emitting a laser beam, a scanning unit for scanning the laser beam to form scanning beams, and a diffractive optical element which the scanning beams are passed through to form illuminating beams that are projected to an area to be illuminated or an object. Thus an image detecting unit can capture an image of the area or the object. The scanning beams are converted into the illuminating beams by the diffractive optical element that causes changes in spatial phase redistribution or light energy distribution thereof. One point in the area or on the object shows energy of partial light of at least two of the laser beams. Thus a laser speckle of the image can be eliminated by the superposition of the energy of the partial light.

Abstract: The semiconductor device structures and methods for forming the same are provided. The semiconductor device structure includes a metal gate over a substrate. A first spacer is formed over sidewalls of the metal gate and having a first height. A second spacer is formed over the sidewalls of the metal gate and having a second height. The first height is higher than the second height. The first spacer is farther from the sidewalls of the metal gate than the second spacer. In addition, the semiconductor device structure includes a dielectric layer formed over the substrate to surround the first spacer and the metal gate.

Abstract: The semiconductor device structures and methods for forming the same are provided. The semiconductor device structure includes a metal gate over a substrate. A first spacer is formed over sidewalls of the metal gate and having a first height. A second spacer is formed over the sidewalls of the metal gate and having a second height. The first height is higher than the second height. The first spacer is farther from the sidewalls of the metal gate than the second spacer. In addition, the semiconductor device structure includes a dielectric layer formed over the substrate to surround the first spacer and the metal gate.

Abstract: The semiconductor device structures and methods for forming the same are provided. The semiconductor device structure includes a metal gate over a substrate. A first spacer is formed over sidewalls of the metal gate and having a first height. A second spacer is formed over the sidewalls of the metal gate and having a second height. The first height is higher than the second height. The first spacer is farther from the sidewalls of the metal gate than the second spacer. In addition, the semiconductor device structure includes a dielectric layer formed over the substrate to surround the first spacer and the metal gate.

Abstract: The semiconductor device structures and methods for forming the same are provided. The semiconductor device structure includes a metal gate over a substrate. A first spacer is formed over sidewalls of the metal gate and having a first height. A second spacer is formed over the sidewalls of the metal gate and having a second height. The first height is higher than the second height. The first spacer is farther from the sidewalls of the metal gate than the second spacer. In addition, the semiconductor device structure includes a dielectric layer formed over the substrate to surround the first spacer and the metal gate.

Abstract: Embodiments of the disclosure provide semiconductor device structures and methods of forming the same. The semiconductor device structure includes a metal gate over a substrate. A first spacer is formed over sidewalls of the metal gate and having a first height. A second spacer is formed over the sidewalls of the metal gate and having a second height. The first height is higher than the second height. The first spacer is farther from the sidewalls of the metal gate than the second spacer. In addition, the semiconductor device structure includes a dielectric layer formed over the substrate to surround the first spacer and the metal gate.

Abstract: A semiconductor device structure is provided. The semiconductor device structure includes a semiconductor substrate. The semiconductor device structure includes an isolation structure positioned in the semiconductor substrate and adjacent to a first active region of the semiconductor substrate. The semiconductor device structure includes a gate stack disposed over the first active region. The semiconductor device structure includes a first contact structure disposed over the first active region and positioned between the isolation structure and the gate stack. The semiconductor device structure includes a dummy gate stack disposed over the isolation structure and adjacent to the gate stack. The dummy gate stack is not positioned over a portion of the isolation structure next to the first contact structure.

Abstract: A semiconductor device structure is provided. The semiconductor device structure includes a semiconductor substrate. The semiconductor device structure includes an isolation structure positioned in the semiconductor substrate and adjacent to a first active region of the semiconductor substrate. The semiconductor device structure includes a gate stack disposed over the first active region. The semiconductor device structure includes a first contact structure disposed over the first active region and positioned between the isolation structure and the gate stack. The semiconductor device structure includes a dummy gate stack disposed over the isolation structure and adjacent to the gate stack. The dummy gate stack is not positioned over a portion of the isolation structure next to the first contact structure.

Abstract: Embodiments of the disclosure provide semiconductor device structures and methods of forming the same. The semiconductor device structure includes a metal gate over a substrate. A first spacer is formed over sidewalls of the metal gate and having a first height. A second spacer is formed over the sidewalls of the metal gate and having a second height. The first height is higher than the second height. The first spacer is farther from the sidewalls of the metal gate than the second spacer. In addition, the semiconductor device structure includes a dielectric layer formed over the substrate to surround the first spacer and the metal gate.

Abstract: A laser projection system including a projection screen and a laser projector is revealed. The projection screen includes at least one light emitting layer having at least one luminescent material that is excited by excitation light with a specific wavelength range to generate excited light with another wavelength range. The laser projector consists of a laser light source module, a laser signal modulation module, a rotation plane mirror module, a rotation plane mirror control module, and a signal conversion module. The laser projector produces excitation laser according to an image signal of a static image or dynamic image and projects the laser to the projection screen correspondingly for an image displayed. Thus a projected image with high recognition is displayed on the projection screen in a transparent manner in natural sunlight. Therefore efficiency and application of the laser projection are improved.

Abstract: A laser projection system including a projection screen and a laser projector is revealed. The projection screen includes at least one light emitting layer having at least one luminescent material that is excited by excitation light with a specific wavelength range to generate excited light with another wavelength range. The laser projector consists of a laser light source module, a laser signal modulation module, a rotation plane mirror module, a rotation plane mirror control module, and a signal conversion module. The laser projector produces excitation laser according to an image signal of a static image or dynamic image and projects the laser to the projection screen correspondingly for an image displayed. Thus a projected image with high recognition is displayed on the projection screen in a transparent manner in natural sunlight. Therefore efficiency and application of the laser projection are improved.

Abstract: A display device is revealed. The display device includes a laser source for emitting a laser beam, a pre-optics for processing the laser beam, a light scan member such as a MEMS mirror for converting the processed laser beam into a scanning light beam, and/or a corresponding post-optics. A switch-control beam splitter is disposed on the light path of the laser beam, after the light scan member so as to divide the scanning light beam into a reflected light beam and a transmitted light beam. They are two different light paths and generate a virtual image as well as a real image respectively.

Abstract: A calibration method of an optical transceiver module includes the steps of receiving an input voltage, detecting an optical signal for generating an input power based on the optical signal, generating a compensating power based on the input voltage, and generating a calibrating power based on the compensating power and the input power.

Abstract: An optical transceiver disposed within a cage includes a main body, a handle and a sliding element. The handle is coupled with the main body. The sliding element is secured to the handle and has an arm which is slidably disposed in a track of the main body. When the handle is rotated, the sliding element slides along the track.