Abstract: A laser illumination system and a method for eliminating laser speckles thereof are revealed. The laser illumination system includes laser module emitting a laser beam, a scanning unit for scanning the laser beam to form scanning beams, and a diffractive optical element which the scanning beams are passed through to form illuminating beams that are projected to an area to be illuminated or an object. Thus an image detecting unit can capture an image of the area or the object. The scanning beams are converted into the illuminating beams by the diffractive optical element that causes changes in spatial phase redistribution or light energy distribution thereof. One point in the area or on the object shows energy of partial light of at least two of the laser beams. Thus a laser speckle of the image can be eliminated by the superposition of the energy of the partial light.

Abstract: A laser illumination system and a method for eliminating laser speckles thereof are revealed. The laser illumination system includes laser module emitting a laser beam, a scanning unit for scanning the laser beam to form scanning beams, and a diffractive optical element which the scanning beams are passed through to form illuminating beams that are projected to an area to be illuminated or an object. Thus an image detecting unit can capture an image of the area or the object. The scanning beams are converted into the illuminating beams by the diffractive optical element that causes changes in spatial phase redistribution or light energy distribution thereof. One point in the area or on the object shows energy of partial light of at least two of the laser beams. Thus a laser speckle of the image can be eliminated by the superposition of the energy of the partial light.

Abstract: The semiconductor device structures and methods for forming the same are provided. The semiconductor device structure includes a metal gate over a substrate. A first spacer is formed over sidewalls of the metal gate and having a first height. A second spacer is formed over the sidewalls of the metal gate and having a second height. The first height is higher than the second height. The first spacer is farther from the sidewalls of the metal gate than the second spacer. In addition, the semiconductor device structure includes a dielectric layer formed over the substrate to surround the first spacer and the metal gate.

Abstract: The semiconductor device structures and methods for forming the same are provided. The semiconductor device structure includes a metal gate over a substrate. A first spacer is formed over sidewalls of the metal gate and having a first height. A second spacer is formed over the sidewalls of the metal gate and having a second height. The first height is higher than the second height. The first spacer is farther from the sidewalls of the metal gate than the second spacer. In addition, the semiconductor device structure includes a dielectric layer formed over the substrate to surround the first spacer and the metal gate.

Abstract: The semiconductor device structures and methods for forming the same are provided. The semiconductor device structure includes a metal gate over a substrate. A first spacer is formed over sidewalls of the metal gate and having a first height. A second spacer is formed over the sidewalls of the metal gate and having a second height. The first height is higher than the second height. The first spacer is farther from the sidewalls of the metal gate than the second spacer. In addition, the semiconductor device structure includes a dielectric layer formed over the substrate to surround the first spacer and the metal gate.

Abstract: The semiconductor device structures and methods for forming the same are provided. The semiconductor device structure includes a metal gate over a substrate. A first spacer is formed over sidewalls of the metal gate and having a first height. A second spacer is formed over the sidewalls of the metal gate and having a second height. The first height is higher than the second height. The first spacer is farther from the sidewalls of the metal gate than the second spacer. In addition, the semiconductor device structure includes a dielectric layer formed over the substrate to surround the first spacer and the metal gate.

Abstract: Embodiments of the disclosure provide semiconductor device structures and methods of forming the same. The semiconductor device structure includes a metal gate over a substrate. A first spacer is formed over sidewalls of the metal gate and having a first height. A second spacer is formed over the sidewalls of the metal gate and having a second height. The first height is higher than the second height. The first spacer is farther from the sidewalls of the metal gate than the second spacer. In addition, the semiconductor device structure includes a dielectric layer formed over the substrate to surround the first spacer and the metal gate.

Abstract: A semiconductor device structure is provided. The semiconductor device structure includes a semiconductor substrate. The semiconductor device structure includes an isolation structure positioned in the semiconductor substrate and adjacent to a first active region of the semiconductor substrate. The semiconductor device structure includes a gate stack disposed over the first active region. The semiconductor device structure includes a first contact structure disposed over the first active region and positioned between the isolation structure and the gate stack. The semiconductor device structure includes a dummy gate stack disposed over the isolation structure and adjacent to the gate stack. The dummy gate stack is not positioned over a portion of the isolation structure next to the first contact structure.

Abstract: A semiconductor device structure is provided. The semiconductor device structure includes a semiconductor substrate. The semiconductor device structure includes an isolation structure positioned in the semiconductor substrate and adjacent to a first active region of the semiconductor substrate. The semiconductor device structure includes a gate stack disposed over the first active region. The semiconductor device structure includes a first contact structure disposed over the first active region and positioned between the isolation structure and the gate stack. The semiconductor device structure includes a dummy gate stack disposed over the isolation structure and adjacent to the gate stack. The dummy gate stack is not positioned over a portion of the isolation structure next to the first contact structure.

Abstract: Embodiments of the disclosure provide semiconductor device structures and methods of forming the same. The semiconductor device structure includes a metal gate over a substrate. A first spacer is formed over sidewalls of the metal gate and having a first height. A second spacer is formed over the sidewalls of the metal gate and having a second height. The first height is higher than the second height. The first spacer is farther from the sidewalls of the metal gate than the second spacer. In addition, the semiconductor device structure includes a dielectric layer formed over the substrate to surround the first spacer and the metal gate.

Abstract: A laser projection system including a projection screen and a laser projector is revealed. The projection screen includes at least one light emitting layer having at least one luminescent material that is excited by excitation light with a specific wavelength range to generate excited light with another wavelength range. The laser projector consists of a laser light source module, a laser signal modulation module, a rotation plane mirror module, a rotation plane mirror control module, and a signal conversion module. The laser projector produces excitation laser according to an image signal of a static image or dynamic image and projects the laser to the projection screen correspondingly for an image displayed. Thus a projected image with high recognition is displayed on the projection screen in a transparent manner in natural sunlight. Therefore efficiency and application of the laser projection are improved.

Abstract: A laser projection system including a projection screen and a laser projector is revealed. The projection screen includes at least one light emitting layer having at least one luminescent material that is excited by excitation light with a specific wavelength range to generate excited light with another wavelength range. The laser projector consists of a laser light source module, a laser signal modulation module, a rotation plane mirror module, a rotation plane mirror control module, and a signal conversion module. The laser projector produces excitation laser according to an image signal of a static image or dynamic image and projects the laser to the projection screen correspondingly for an image displayed. Thus a projected image with high recognition is displayed on the projection screen in a transparent manner in natural sunlight. Therefore efficiency and application of the laser projection are improved.

Abstract: A display device is revealed. The display device includes a laser source for emitting a laser beam, a pre-optics for processing the laser beam, a light scan member such as a MEMS mirror for converting the processed laser beam into a scanning light beam, and/or a corresponding post-optics. A switch-control beam splitter is disposed on the light path of the laser beam, after the light scan member so as to divide the scanning light beam into a reflected light beam and a transmitted light beam. They are two different light paths and generate a virtual image as well as a real image respectively.

Abstract: A calibration method of an optical transceiver module includes the steps of receiving an input voltage, detecting an optical signal for generating an input power based on the optical signal, generating a compensating power based on the input voltage, and generating a calibrating power based on the compensating power and the input power.

Abstract: An optical transceiver disposed within a cage includes a main body, a handle and a sliding element. The handle is coupled with the main body. The sliding element is secured to the handle and has an arm which is slidably disposed in a track of the main body. When the handle is rotated, the sliding element slides along the track.

Abstract: An optical transceiver disposed within a cage includes a main body, a handle and a sliding element. The handle is coupled with the main body. The sliding element is secured to the handle and has an arm which is slidably disposed in a track of the main body. When the handle is rotated, the sliding element slides along the track.

Abstract: A connecting module comprises a body, a housing and a transmission device disposed in the body. The transmission device comprises a fixed element having a guiding slot, a slider and a movable bar. The movable bar drives the slider to horizontally move along the guiding slot, to disengage the body from the housing.

Abstract: A calibration method of an optical transceiver module includes the steps of receiving an input voltage, detecting an optical signal for generating an input power based on the optical signal, generating a compensating power based on the input voltage, and generating a calibrating power based on the compensating power and the input power.

Abstract: A connecting module comprises a body, a housing and a transmission device disposed in the body. The transmission device comprises a fixed element having a guiding slot, a slider and a movable bar. The movable bar drives the slider to horizontally move along the guiding slot, to disengage the body from the housing.

Abstract: An improved gain-clamped optical amplifier is disclosed. A series of laser cavities are placed along the amplifier axis. The laser cavities are designed such that the carrier densities of the amplifier decline toward the signal output end. Since the gain clamping amplitudes at positions along the amplifier can be different, we have the freedom to optimize the optical gain at all location, to minimize the noise impact at the signal input end, and to maximize the saturation output power at the signal output end. In addition, carrier levering effect realized by gain/loss wings further lowers the noise figure, and extends the optical gain and saturation output power. An ideal optical amplifier with high linear gain, small noise figure, and large saturation output power and extended dynamic range is then achieved. Energy saving is the bonus of using the invented amplifiers.