Abstract: The present disclosure provides a method and system for manufacturing a semiconductor layer. The method includes: placing a first wafer in a cavity to form a metal film on the first wafer; before forming the metal film, the temperature inside the cavity is a first temperature; transferring the first wafer on which the metal film has been formed out of the cavity; the temperature in the cavity is a second temperature, and the second temperature is greater than the first temperature; introducing an inert gas into the cavity to cool the cavity, such that the temperature in the cavity is equal to the first temperature; after the temperature in the cavity is equal to the first temperature, placing a second wafer in the cavity to form the metal film on the second wafer. The manufacturing method can reduce the defects on the surface of the metal film.

Abstract: A speaker system includes a first driver unit, a second driver unit and a cylinder case. The first driver unit and the second driver unit are disposed face to face with the same axial line. The axial line of the first driver unit and the axial line of the second driver unit forms a coaxial axial line or parallel axial lines. The cylinder case is hollow. The first driver unit and the second driver unit are disposed inside the cylinder case and contacts the inner wall of the cylinder case so that the central axial line of the cylinder case is parallel to the coaxial axial line or the parallel axial lines. A speak device includes a plurality of speaker systems. By the aforementioned configuration, even driver units may be disposed in a common cavity.

Abstract: The present disclosure provides a method and system for manufacturing a semiconductor layer. The method includes: placing a first wafer in a cavity to form a metal film on the first wafer; before forming the metal film, the temperature inside the cavity is a first temperature; transferring the first wafer on which the metal film has been formed out of the cavity; the temperature in the cavity is a second temperature, and the second temperature is greater than the first temperature; introducing an inert gas into the cavity to cool the cavity, such that the temperature in the cavity is equal to the first temperature; after the temperature in the cavity is equal to the first temperature, placing a second wafer in the cavity to form the metal film on the second wafer. The manufacturing method can reduce the defects on the surface of the metal film.

Abstract: A pre-processing method, a method for forming a metal silicide and a semiconductor processing apparatus are disclosed by the present invention. In the pre-processing method, a plasma etching process is performed on a semiconductor structure including a substrate. A first conductive portion and an isolation spacer covering a side surface of the first conductive portion are formed on a surface of an active area in the substrate. In the plasma etching process, a bias voltage applied to a surface of the semiconductor structure is adjusted by adjusting power outputs of two RF sources and is not lower than 150 V. In the metal silicide formation method, after a semiconductor structure including a first conductive portion and a second conductive portion is pre-processed in the manner as described above, a metal film is deposited thereon and annealed to result in the formation of the metal silicide.

Abstract: A pre-processing method, a method for forming a metal silicide and a semiconductor processing apparatus are disclosed by the present invention. In the pre-processing method, a plasma etching process is performed on a semiconductor structure including a substrate. A first conductive portion and an isolation spacer covering a side surface of the first conductive portion are formed on a surface of an active area in the substrate. In the plasma etching process, a bias voltage applied to a surface of the semiconductor structure is adjusted by adjusting power outputs of two RF sources and is not lower than 150 V. In the metal silicide formation method, after a semiconductor structure including a first conductive portion and a second conductive portion is pre-processed in the manner as described above, a metal film is deposited thereon and annealed to result in the formation of the metal silicide.

Abstract: A method for providing visual effect messages on a receiving end and associated transmitting end configuration is provided. At the transmitting end, visual effect positions and visual effects of messages are determined according to an input message. The visual effect positions and visual effect information are transmitted to the receiving end, and are displayed at the visual effect positions at the receiving end according to the visual information.

Abstract: A tamper-evident container is disclosed. The tamper-evident container includes a containing base, a lid, and a release structure. The lid is fixed to the containing base for closing. The release structure is disposed at the lid or the containing base. The release structure comprises a break line and at least one hole. The hole is disposed on the break line and the break line is for separating the lid from the containing base.

Abstract: A tamper-evident container is disclosed. The tamper-evident container includes a containing base, a lid, and a release structure. The containing base has a base edge and the lid has a lid edge. The lid is fixed to the containing base for closing and the base edge encloses the lid edge. The release is disposed at the containing base. The release structure includes a barrier line and two break lines. The break lines are extended from two ends of the barrier line to the base edge. A detachable zone is encompassed by the barrier line, the break lines, and the base edge. The break lines are for detaching the detachable zone from the containing base, so that the lid edge is partially exposed so as to separate the lid from the containing base.

Abstract: A method and apparatus for displaying a branch structure by emulating natural visual effects of a branch structure, e.g., lightning, is provided. The branch structure comprises branches each formed by segments. Each segment is generated by randomly providing a segment end position according to a segment start position, and randomly determining whether another branch is provided at each segment.

Abstract: An method for manufacturing an imitation leather includes preparing an animal skin powder, blending the animal skin powder and a matrix to form the imitation plastic material and then the imitation plastic material being cooled and granulated to form granules and melting and feeding the granules of the imitation plastic material to a sheet extruding equipment to extrude the flexible sheet imitation leather. The animal skin powder comprises an animal epidermis powder and has a particle size of 0.2 um-0.3 mm. The matrix comprises an elastic material. The animal skin powder and the matrix are blended under a blending temperature between 100-160° C. and the animal skin powder is present in the imitation plastic material in an amount of 30-70 wt %, based on the total weight of the imitation plastic material.

Abstract: A method for providing visual effect messages on a receiving end and associated transmitting end configuration is provided. At the transmitting end, visual effect positions and visual effects of messages are determined according to an input message. The visual effect positions and visual effect information are transmitted to the receiving end, and are displayed at the visual effect positions at the receiving end according to the visual information.

Abstract: A method and apparatus for displaying a branch structure by emulating natural visual effects of a branch structure, e.g., lightning, is provided. The branch structure comprises branches each formed by segments. Each segment is generated by randomly providing a segment end position according to a segment start position, and randomly determining whether another branch is provided at each segment.

Abstract: A physiological signal sensing device, a containing device and a method for wearing a protective film are provided. The physiological signal sensing device includes a housing, a sensing module, a fastening, and a transporter. The housing includes an opening. The sensing module is engaged within the housing and used for sensing vital signal(s). The transporter is engaged within the housing and transports a protective film. When the sensing module is moved to a predetermined site, the fastening fixes an area of the protective film at the opening. When the sensing module keeps being moved through the opening, the area of the protective film is stretched over the sensing module so as to properly fix the area of the protective film to cover the sensing module evenly.

Abstract: A physiological signal sensing device, a containing device and a method for transporting a protective film are provided. The physiological sensing device includes a sensing module, a transporter, and a driving assembly. The sensing module is used for sensing vital signals. The transporter is used for transporting a protective film. The driving assembly includes a first structural member, a second structural member and a third structural member. One of the second and the third structural members selectively connects to the transporting device depending on the rotation direction of the first structural member for driving the transporter to transport the protective film from a starting site to an ending site.

Abstract: Biodegradable desiccant grains include 80-85 weight parts of a polylactide matrix and 20-30 weight parts of water absorbent particles dispersed in the matrix. The water absorbent particles include polysaccharide, biodegradable polymers, natural calcium carbonate, and activated charcoal. A method for making the biodegradable desiccant grains is also disclosed.

Abstract: A polylactide-coated paperboard is provided. The polylactide-coated paperboard includes a paperboard and at least one polylactide layer on the paperboard. The polylactide layer is made from a compound that contains 97-100 wt % polylactic acid.

Abstract: A mechanism utilized to adjust an inclination angle and a horizontal rotation angle of a unit includes at least one pressing plate and at least one supporting portion. The pressing plate is disposed inside an installing space, and a curved surface of the pressing plate includes a first fixture. The supporting portion is disposed on the unit at a location corresponding to the pressing plate. The supporting portion includes a second fixture, fixing to the first fixture of the pressing plate to determine the inclination angle of the unit.

Abstract: A method for image rendering is disclosed. A leftmost block of a top tile row (RTOP) is defined as an initial block (TINIT) and a reference pixel of the initial block is defined as an initial pixel. Block offset along the X and Y axes (?x and ?y) between a leftmost block of a current tile row and the initial block is calculated and attributes of a reference of the leftmost block is calculated using a formula ALEFT=AINIT+dA/dx*n*?x+dA/dy*n*?y. Block offset between a current block and the leftmost block (?z) is calculated, in which the current block and the leftmost block reside in the same tile row. Attributes of reference pixels of the current block are calculated using a formula ACURRENT=ALEFT+dA/dx*n*?z.

Abstract: A method for transferring patterns. After a patterned photoresist is formed on a substrate, the patterned photoresist is hardened, and the pattern of the hardened patterned photoresist is transferred into the substrate. Moreover, a popular method to harden is the silylation process, it is acceptable to only harder the top of the patterned photoresist or to harden both the top and the sidewall of the patterned photoresist. Besides, it is optional to change the thickness and the critical dimension of the patterned photoresist before it is hardened. Significantly, because the etch resistance of hardened patterned photoresist is higher than that of the non-hardened patterned photoresist, the method can improve any defect induced by etched photoresist during the pattern transferring process. Similarly, because a thinner non-hardened photoresist is available for the method, a smaller critical dimension of the patterned photoresist is available for the method while the photolithography technology being not improved.

Abstract: A method for reducing hole defects in the polysilicon layer. The method at least includes the following steps. First of all, a semiconductor substrate is provided, a polysilicon layer is formed over the semiconductor substrate. Then, no hole defects bottom anti-reflective coating process is performed, wherein the no hole defect bottom anti-reflective coating process is selected from the group consisting of dehydration baking, hydrophobic solvent treatment, and steady baking. Finally, a bottom anti-reflective coating is formed over the polysilicon layer.