Abstract: Provided is an electronic device including a touch panel, a communication unit, and a processing unit coupled to the touch control panel and the communication unit. The communication unit sends a detection signal and receives a response signal based on the detection signal. The processing unit determines an operation mode of the electronic device based on the response signal. The operation mode includes a first mode and a second mode. An input signal source of the electronic device of the first mode includes a finger. The input signal source of the second mode includes the finger and a stylus. When the response signal includes a pen-tip signal of the stylus and a pen-ring signal of the stylus, the processing unit determines whether to set the operation mode to the second mode according to the numerical relationship between the pen-tip signal and the pen-ring signal.

Abstract: Provided is an electronic device including a touch panel, a communication unit, and a processing unit coupled to the touch control panel and the communication unit. The communication unit sends a detection signal and receives a response signal based on the detection signal. The processing unit determines an operation mode of the electronic device based on the response signal. The operation mode includes a first mode and a second mode. An input signal source of the electronic device of the first mode includes a finger. The input signal source of the second mode includes the finger and a stylus. When the response signal includes a pen-tip signal of the stylus and a pen-ring signal of the stylus, the processing unit determines whether to set the operation mode to the second mode according to the numerical relationship between the pen-tip signal and the pen-ring signal.

Abstract: Among other things, a system and method for adjusting the intensity of a laser beam applied to a semiconductor device are provided for herein. A sensor is configured to measure the intensity of a laser beam reflected from the semiconductor device. Based upon the reflection intensity, an intensity of the laser beam that is applied to the semiconductor device is adjusted, such as to alter an annealing operation performed on the semiconductor device, for example.

Abstract: Among other things, a system and method for adjusting the intensity of a laser beam applied to a semiconductor device are provided for herein. A sensor is configured to measure the intensity of a laser beam reflected from the semiconductor device. Based upon the reflection intensity, an intensity of the laser beam that is applied to the semiconductor device is adjusted, such as to alter an annealing operation performed on the semiconductor device, for example.

Abstract: Among other things, a system and method for adjusting the intensity of a laser beam applied to a semiconductor device are provided for herein. A sensor is configured to measure the intensity of a laser beam reflected from the semiconductor device. Based upon the reflection intensity, an intensity of the laser beam that is applied to the semiconductor device is adjusted, such as to alter an annealing operation performed on the semiconductor device, for example.