Abstract: A fan includes a hub and a plurality of fan blades. The hub has an axle center. The fan blades are disposed around the hub. Each of the fan blades has a bent portion, and the bent portions of the fan blades are extended along a surrounding direction surrounding the axle center. The hub is welded with the bent portion of each of the fan blades along the surrounding direction. As a result, the number of fan blades is maximized, the strength is simultaneously ensured to be enough, and the advantages of effectively enhancing the fan characteristics are achieved.

Abstract: A semiconductor device includes a fin extending from a substrate. The fin has a source/drain region and a channel region. The channel region includes a first semiconductor layer and a second semiconductor layer disposed over the first semiconductor layer and vertically separated from the first semiconductor layer by a spacing area. A high-k dielectric layer at least partially wraps around the first semiconductor layer and the second semiconductor layer. A metal layer is formed along opposing sidewalls of the high-k dielectric layer. The metal layer includes a first material. The spacing area is free of the first material.

Abstract: An optical system includes a sensing assembly and a processing circuit. The sensing assembly is configured to sense light and output a sensing signal accordingly. The processing circuit is configured to analyze the sensing signal. The processing circuit is configured to output a main judgment signal to an external circuit according to the sensing signal.

Abstract: A high electron mobility transistor device including a channel layer, a first barrier layer, and a P-type gallium nitride layer is provided. The first barrier layer is disposed on the channel layer. The P-type gallium nitride layer is disposed on the first barrier layer. The first thickness of the first barrier layer located directly under the P-type gallium nitride layer is greater than the second thickness of the first barrier layer located on two sides of the P-type gallium nitride layer.

Abstract: A semiconductor device includes a first set of nanostructures stacked over a substrate in a vertical direction, and each of the first set of nanostructures includes a first end portion and a second end portion, and a first middle portion laterally between the first end portion and the second end portion. The first end portion and the second end portion are thicker than the first middle portion. The semiconductor device also includes a first plurality of semiconductor capping layers around the first middle portions of the first set of nanostructures, and a gate structure around the first plurality of semiconductor capping layers.

Abstract: A conductive paste for a solar cell, a solar cell and a manufacturing method thereof, and a solar cell module are provided. The conductive paste for a solar cell includes a silver powder, a glass, an organic vehicle, and a tellurium alloy compound, wherein the tellurium alloy compound has a melting point at least 300° C. higher than the softening point of the glass.

Abstract: The present invention relates to a conductive paste and a method for producing solar cell by using the same. The conductive paste comprises at least silver powders and a composite glass frit comprising a first type of glass frit containing lead oxides and silicon oxides and a second type of glass frit containing tellurium oxides and zinc oxides wherein the first type of glass frit and the second type of glass frit are in a weight ratio of 93:7 to 44:56.

Abstract: A conductive paste for a solar cell, a solar cell and a manufacturing method thereof, and a solar cell module are provided. The conductive paste for a solar cell includes a silver powder, a glass, an organic vehicle, and a tellurium alloy compound, wherein the tellurium alloy compound has a melting point at least 300° C. higher than the softening point of the glass.

Abstract: The present invention provides a novel crystalline oxide, a process for producing the crystalline oxides, a conductive paste comprising the crystalline oxides and an article comprising a substrate and an abovementioned conductive paste applied on the substrate.

Abstract: The present invention relates to a conductive paste and a method for producing solar cell by using the same. The conductive paste comprises at least silver powders and a composite glass frit comprising a first type of glass frit containing lead oxides and silicon oxides and a second type of glass frit containing tellurium oxides and zinc oxides wherein the first type of glass frit and the second type of glass frit are in a weight ratio of 93:7 to 44:56.

Abstract: The present invention discloses a conductive paste comprising a conductive metal or a derivative thereof, and a lead-free glass frit dispersed in an organic vehicle, wherein said lead-free glass frit comprises tellurium-bismuth-zinc-oxide. The conductive paste of the present invention can be used in the preparation of an electrode of a solar cell with excellent energy conversion efficiency.

Abstract: The present invention discloses a conductive paste comprising a conductive metal or a derivative thereof, and a lead-free glass frit dispersed in an organic vehicle, wherein said lead-free glass frit comprises tellurium-bismuth-selenium-lithium-oxide. The conductive paste of the present invention can be used in the preparation of an electrode of a solar cell with excellent energy conversion efficiency.

Abstract: The present invention discloses a conductive paste comprising a conductive metal or a derivative thereof, and a lead-free glass frit dispersed in an organic vehicle, wherein said lead-free glass frit comprises tellurium-bismuth-lithium-oxide. The conductive paste of the present invention can be used in the preparation of an electrode of a solar cell with excellent energy conversion efficiency.

Abstract: The present invention discloses a conductive paste comprising a conductive metal or a derivative thereof, and a lead-free glass frit dispersed in an organic vehicle, wherein said lead-free glass frit comprises tellurium-zinc-lithium oxide. The conductive paste of the present invention can be used in the preparation of an electrode of a solar cell with excellent energy conversion efficiency.

Abstract: The present invention discloses a conductive paste comprising a conductive metal or a derivative thereof, and a lead-free glass frit dispersed in an organic vehicle, wherein said lead-free glass frit comprises tellurium-bismuth oxide. The conductive paste of the present invention can be used in the preparation of an electrode of a solar cell with excellent energy conversion efficiency.

Abstract: The present invention discloses a conductive paste comprising a conductive metal or a derivative thereof, and a lead-free glass frit dispersed in an organic vehicle, wherein said lead-free glass frit comprises tellurium-bismuth-zinc-tungsten-oxide. The conductive paste of the present invention can be used in the preparation of an electrode of a solar cell with excellent energy conversion efficiency.

Abstract: The present invention discloses a conductive paste for solar cell, including the following composition: silver particle and two glass frits. A glass frit (I) comprises bismuth oxide, tellurium oxide, tungsten oxide, silicon oxide, and zinc oxide; and a glass frit (II) comprises lead oxide, tellurium oxide, and zinc oxide. The conductive paste is utilized to form the electrode of the substrate for solar cell to enhance the performance of Ohmic contact, fill factor and conversion efficiency of the solar cell, after sintering.

Abstract: The present invention discloses a conductive paste for solar cell, including the following composition: (a) a silver powder; (b) a filler which can be coated with a conductor; (c) a glass frit; and further (d) a dispersing agent, an organic vehicle, and at least one additive. The filler, especially conductor coated, is used to replace part of silver powder as an ingredient of the conductive paste and thus reduces manufacturing cost without conductivity diminishing. This conductive paste can be utilized to form the front-side electrode of the substrate for solar cell.

Abstract: A lead-free sealing material is provided, which contains a glass with a composition including 47.5-67.5 mole % SnO, 2.5-15 mole % MgO, and 30-40 mole % P2O5. The lead-free sealing material has excellent chemical durability, low melting temperature, and good flowability during heating. The lead-free material is particularly suitable to be used as a sealing material. The lead-free sealing material may additionally contain low-thermal-expansion powdered fillers to reduce the thermal expansion coefficient of the resulting sealing material.

Abstract: A lead-free sealing material is provided, which contains a glass with a composition including 47.5-67.5 mole % SnO, 2.5-15 mole % MgO, and 30-40 mole % P2O5. The lead-free sealing material has excellent chemical durability, low melting temperature, and good flowability during heating. The lead-free material is particularly suitable to be used as a sealing material. The lead-free sealing material may additionally contain low-thermal-expansion powdered fillers to reduce the thermal expansion coefficient of the resulting sealing material.