Patents by Inventor Chih-Hsin Chang
Chih-Hsin Chang has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Publication number: 20240129766Abstract: A throttle control method for a mobile device include collecting input data, generating a first set of user experience indices according to the input data, and checking whether a user experience index of the first set of user experience indices satisfies a UEI threshold. The input data includes common information data, current configuration data and a plurality of throttle control parameters. Each user experience index of the first set of user experience indices is corresponding to at least one of throttle control parameter of the plurality of throttle control parameters.Type: ApplicationFiled: April 10, 2023Publication date: April 18, 2024Applicant: MediaTek Singapore Pte. Ltd.Inventors: Hung-Yueh Chen, Byeng Hyun Kim, JUNG SHUP SHIN, Shih-Hsin Chen, Chih-Chieh Lai, Chung-Pi Lee, JUNGWOO LEE, Yu-Lun Chang
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Publication number: 20240097034Abstract: A field effect transistor includes a substrate comprising a fin structure. The field effect transistor further includes an isolation structure in the substrate. The field effect transistor further includes a source/drain (S/D) recess cavity below a top surface of the substrate. The S/D recess cavity is between the fin structure and the isolation structure. The field effect transistor further includes a strained structure in the S/D recess cavity. The strain structure includes a lower portion. The lower portion includes a first strained layer, wherein the first strained layer is in direct contact with the isolation structure, and a dielectric layer, wherein the dielectric layer is in direct contact with the substrate, and the first strained layer is in direct contact with the dielectric layer. The strained structure further includes an upper portion comprising a second strained layer overlying the first strained layer.Type: ApplicationFiled: November 29, 2023Publication date: March 21, 2024Inventors: Tsung-Lin Lee, Chih-Hao Chang, Chih-Hsin Ko, Feng Yuan, Jeff J. Xu
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Publication number: 20240086612Abstract: An IC device includes first through third rows of fin field-effect transistors (FinFETs), wherein the second row is between and adjacent to each of the first and third rows, the FinFETs of the first row are one of an n-type or p-type, the FinFETs of the second and third rows are the other of the n-type or p-type, the FinFETs of the first and third rows include a first total number of fins, and the FinFETs of the second row include a second total number of fins one greater or fewer than the first total number of fins.Type: ApplicationFiled: November 22, 2023Publication date: March 14, 2024Inventors: Po-Hsiang HUANG, Fong-Yuan CHANG, Clement Hsingjen WANN, Chih-Hsin KO, Sheng-Hsiung CHEN, Li-Chun TIEN, Chia-Ming HSU
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Patent number: 11929434Abstract: A switch device includes a P-type substrate, a first gate structure, a first N-well, a shallow trench isolation structure, a first P-well, a second gate structure, a first N-type doped region, a second P-well, and a second N-type doped region. The first N-well is formed in the P-type substrate and partly under the first gate structure. The shallow trench isolation structure is formed in the first N-well and under the first gate structure. The first P-well is formed in the P-type substrate and under the first gate structure. The first N-type doped region is formed in the P-type substrate and between the first gate structure and the second gate structure. The second P-well is formed in the P-type substrate and under the second gate structure. The second N-type doped region is formed in the second P-well and partly under the second gate structure.Type: GrantFiled: April 15, 2022Date of Patent: March 12, 2024Assignee: eMemory Technology Inc.Inventors: Chih-Hsin Chen, Shih-Chen Wang, Tsung-Mu Lai, Wen-Hao Ching, Chun-Yuan Lo, Wei-Chen Chang
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Patent number: 11912837Abstract: The present disclosure provides a thin film including a first thermoplastic polyolefin (TPO) elastomer which is anhydride-grafted. The present disclosure further provides a method for manufacturing the thin film, a laminated material and a method for adhesion.Type: GrantFiled: August 2, 2021Date of Patent: February 27, 2024Assignee: SAN FANG CHEMICAL INDUSTRY CO., LTD.Inventors: Chih-Yi Lin, Kuo-Kuang Cheng, Chi-Chin Chiang, Wen-Hsin Tai, Ming-Chen Chang
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Patent number: 11776889Abstract: A semiconductor device package includes a carrier provided with a first conductive element, a second conductive element arranged on a semiconductor disposed on the carrier, and a second semiconductor device disposed on and across the first conductive element and the first semiconductor device, wherein the first conductive element having a surface that is substantially coplanar with a surface of the second conductive element.Type: GrantFiled: June 1, 2021Date of Patent: October 3, 2023Assignee: ADVANCED SEMICONDUCTOR ENGINEERING, INC.Inventors: Chih-Hsin Chang, Tsu-Hsiu Wu, Tsung-Yueh Tsai
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Patent number: 11486695Abstract: The present invention provides a measurement device for grinding wheel. One or more thickness measurement device is disposed slidably on a platform. A spinning device is disposed on the platform. A grinding wheel is fixed on the spinning device. The spinning shaft spins the grinding wheel. The one or more thickness measurement device measures the flatness condition of the grinding wheel. Furthermore, according to the present invention, a diameter measurement device is disposed inside the platform and measures the roundness of the outer periphery of the grinding wheel. Since the structure can be disassembled easily, the whole measurement device for grinding wheel can be carried conveniently. In addition, measurements can be performed by users on the site where the grinding wheel is located for real-timely understanding the real size and wear condition of grinding wheel.Type: GrantFiled: December 4, 2020Date of Patent: November 1, 2022Assignee: Metal Industries Research & Development CentreInventors: Chin-Kang Chen, Ching-An Lin, Chia-Ho Cheng, Sung-Liang Hsieh, Chih-Hsin Chang
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Publication number: 20210296244Abstract: A semiconductor device package includes a carrier provided with a first conductive element, a second conductive element arranged on a semiconductor disposed on the carrier, and a second semiconductor device disposed on and across the first conductive element and the first semiconductor device, wherein the first conductive element having a surface that is substantially coplanar with a surface of the second conductive element.Type: ApplicationFiled: June 1, 2021Publication date: September 23, 2021Applicant: Advanced Semiconductor Engineering, Inc.Inventors: Chih-Hsin CHANG, Tsu-Hsiu WU, Tsung-Yueh TSAI
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Publication number: 20210254965Abstract: The present invention provides a measurement device for grinding wheel. One or more thickness measurement device is disposed slidably on a platform. A spinning device is disposed on the platform. A grinding wheel is fixed on the spinning device. The spinning shaft spins the grinding wheel. The one or more thickness measurement device measures the flatness condition of the grinding wheel. Furthermore, according to the present invention, a diameter measurement device is disposed inside the platform and measures the roundness of the outer periphery of the grinding wheel. Since the structure can be disassembled easily, the whole measurement device for grinding wheel can be carried conveniently. In addition, measurements can be performed by users on the site where the grinding wheel is located for real-timely understanding the real size and wear condition of grinding wheel.Type: ApplicationFiled: December 4, 2020Publication date: August 19, 2021Inventors: CHIN-KANG CHEN, CHING-AN LIN, CHIA-HO CHENG, SUNG-LIANG HSIEH, CHIH-HSIN CHANG
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Patent number: 11024570Abstract: A semiconductor device package includes a carrier provided with a first conductive element, a second conductive element arranged on a semiconductor disposed on the carrier, and a second semiconductor device disposed on and across the first conductive element and the first semiconductor device, wherein the first conductive element having a surface that is substantially coplanar with a surface of the second conductive element.Type: GrantFiled: March 19, 2019Date of Patent: June 1, 2021Assignee: ADVANCED SEMICONDUCTOR ENGINEERING, INC.Inventors: Chih-Hsin Chang, Tsu-Hsiu Wu, Tsung-Yueh Tsai
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Publication number: 20200303294Abstract: A semiconductor device package includes a carrier provided with a first conductive element, a second conductive element arranged on a semiconductor disposed on the carrier, and a second semiconductor device disposed on and across the first conductive element and the first semiconductor device, wherein the first conductive element having a surface that is substantially coplanar with a surface of the second conductive element.Type: ApplicationFiled: March 19, 2019Publication date: September 24, 2020Applicant: Advanced Semiconductor Engineering, Inc.Inventors: Chih-Hsin CHANG, Tsu-Hsiu WU, Tsung-Yueh TSAI
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Patent number: 8490651Abstract: A fluid adjusting device is installed in a valve unit so as to control the volume or pressure of the fluid passing through the valve unit. The fluid adjusting device includes three parts retractably connected to each other and holes are defined through each of the three parts. By expanding or retracting the three parts, the holes can be exposed or hidden to adjust the volume or pressure of the fluid passing through the valve unit.Type: GrantFiled: December 21, 2011Date of Patent: July 23, 2013Assignee: Metal Industries Research & Development Centre.Inventors: Yeuan-Jong Cheng, Chih-Hsin Chang, Po-Yi Tseng
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Publication number: 20120181472Abstract: A fluid adjusting device is installed in a valve unit so as to control the volume or pressure of the fluid passing through the valve unit. The fluid adjusting device includes three parts retractably connected to each other and holes are defined through each of the three parts. By expanding or retracting the three parts, the holes can be exposed or hidden to adjust the volume or pressure of the fluid passing through the valve unit.Type: ApplicationFiled: December 21, 2011Publication date: July 19, 2012Applicant: METAL INDUSTRIES RESEARCH & DEVELOPMENT CENTRE.Inventors: Yeuan-Jong Cheng, Chih-Hsin Chang, Po-Yi Tseng