Patents by Inventor Chih-Hsing Chang

Chih-Hsing Chang has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Publication number: 20240136226
    Abstract: An ammonium fluoride gas may be used to form a protection layer for one or more interlayer dielectric layers, one or more insulating caps, and/or one or more source/drain regions of a semiconductor device during a pre-clean etch process. The protection layer can be formed through an oversupply of nitrogen trifluoride during the pre-clean etch process. The oversupply of nitrogen trifluoride causes an increased formation of ammonium fluoride, which coats the interlayer dielectric layer(s), the insulating cap(s), and/or the source/drain region(s) with a thick protection layer. The protection layer protects the interlayer dielectric layer(s), the insulating cap(s), and/or the source/drain region(s) during the pre-clean process from being etched by fluorine ions formed during the pre-clean process.
    Type: Application
    Filed: January 2, 2024
    Publication date: April 25, 2024
    Inventors: Li-Wei CHU, Ying-Chi SU, Yu-Kai CHEN, Wei-Yip LOH, Hung-Hsu CHEN, Chih-Wei CHANG, Ming-Hsing TSAI
  • Patent number: 11929314
    Abstract: In some implementations, one or more semiconductor processing tools may form a metal cap on a metal gate. The one or more semiconductor processing tools may form one or more dielectric layers on the metal cap. The one or more semiconductor processing tools may form a recess to the metal cap within the one or more dielectric layers. The one or more semiconductor processing tools may perform a bottom-up deposition of metal material on the metal cap to form a metal plug within the recess and directly on the metal cap.
    Type: Grant
    Filed: March 12, 2021
    Date of Patent: March 12, 2024
    Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.
    Inventors: Chun-Hsien Huang, Peng-Fu Hsu, Yu-Syuan Cai, Min-Hsiu Hung, Chen-Yuan Kao, Ken-Yu Chang, Chun-I Tsai, Chia-Han Lai, Chih-Wei Chang, Ming-Hsing Tsai
  • Publication number: 20240080452
    Abstract: A video encoder with quality estimation is shown. The video encoder has a video compressor, a video reconstructor, a quality estimator, and an encoder top controller. The video compressor receives the source data of a video to generate compressed data. The video reconstructor is coupled to the video compressor for generation of playback-level data that is buffered for inter prediction by the video compressor, wherein the video reconstructor generates intermediate data and, based on the intermediate data, the video reconstructor generates playback-level data. The quality estimator is coupled to the video reconstructor to receive the intermediate data. Quality estimation is performed based on the intermediate data rather than the playback-level data. Based on the quality estimation result, the encoder top controller adjusts at least one video compression factor in real time.
    Type: Application
    Filed: July 12, 2023
    Publication date: March 7, 2024
    Inventors: Tung-Hsing WU, Chih-Hao CHANG, Yi-Fan CHANG, Han-Liang CHOU
  • Patent number: 11915976
    Abstract: An ammonium fluoride gas may be used to form a protection layer for one or more interlayer dielectric layers, one or more insulating caps, and/or one or more source/drain regions of a semiconductor device during a pre-clean etch process. The protection layer can be formed through an oversupply of nitrogen trifluoride during the pre-clean etch process. The oversupply of nitrogen trifluoride causes an increased formation of ammonium fluoride, which coats the interlayer dielectric layer(s), the insulating cap(s), and/or the source/drain region(s) with a thick protection layer. The protection layer protects the interlayer dielectric layer(s), the insulating cap(s), and/or the source/drain region(s) during the pre-clean process from being etched by fluorine ions formed during the pre-clean process.
    Type: Grant
    Filed: June 27, 2022
    Date of Patent: February 27, 2024
    Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.
    Inventors: Li-Wei Chu, Ying-Chi Su, Yu-Kai Chen, Wei-Yip Loh, Hung-Hsu Chen, Chih-Wei Chang, Ming-Hsing Tsai
  • Publication number: 20090201053
    Abstract: A layout structure of a source driver having a plurality of driving channels, and a method thereof are provided herein. The layout structure of the source driver includes a plurality of pads and a plurality of routings. The pads are used for making electric contact between the source driver and an external circuit. The routings are respectively coupled between the driving channels and the pads for transmitting the signal. Besides, the routings respectively includes a plurality of resistance units, and each of the resistance units is used for adjusting the resistance of the respective routing so as to minimize a variation of the driving ability between the pads.
    Type: Application
    Filed: February 13, 2008
    Publication date: August 13, 2009
    Applicant: HIMAX TECHNOLOGIES LIMITED
    Inventor: Chih-Hsing Chang
  • Publication number: 20080303771
    Abstract: A display and a two step driving method thereof are provided. The method includes: converting an image signal to a corresponding data driving voltage by using a driver; providing a pre-driving voltage by using a voltage generator; and finally, driving the display panel by using the pre-driving voltage and data driving voltage orderly during a horizontal synchronizing period. A display includes a display panel, a voltage generator, and a driver. The display panel also includes at least one data line. The voltage generator outputs a pre-driving voltage to the data line of the display. The driver outputs a data driving voltage to the data line according to an image signal, in which the data line receives the pre-driving voltage and the data driving voltage orderly during the horizontal synchronizing period.
    Type: Application
    Filed: August 15, 2007
    Publication date: December 11, 2008
    Applicants: HIMAX TECHNOLOGIES LIMITED, CHI MEI OPTOELECTRONICS CORPORATION
    Inventors: Ying-Lieh Chen, Lin-Kai Bu, Chien-Ru Chen, Chih-Hsing Chang, Wen-Tsung Lin, Yung-Yu Tsai, Yung-Li Huang