Abstract: A method of fabricating a contact structure includes the following steps. An opening is formed in a dielectric layer. A conductive material layer is formed within the opening and on the dielectric layer, wherein the conductive material layer includes a bottom section having a first thickness and a top section having a second thickness, the second thickness is greater than the first thickness. A first treatment is performed on the conductive material layer to form a first oxide layer on the bottom section and on the top section of the conductive material layer. A second treatment is performed to remove at least portions of the first oxide layer and at least portions of the conductive material layer, wherein after performing the second treatment, the bottom section and the top section of the conductive material layer have substantially equal thickness.

Abstract: A method includes receiving a semiconductor substrate. The semiconductor substrate has a top surface and includes a semiconductor element. Moreover, the semiconductor substrate has a fin structure formed thereon. The method also includes recessing the fin structure to form source/drain trenches, forming a first dielectric layer over the recessed fin structure in the source/drain trenches, implanting a dopant element into a portion of the fin structure beneath a bottom surface of the source/drain trenches to form an amorphous semiconductor layer, forming a second dielectric layer over the recessed fin structure in the source/drain trenches, annealing the semiconductor substrate, and removing the first and second dielectric layers. After the annealing and the removing steps, the method further includes further recessing the recessed fin structure to provide a top surface. Additionally, the method includes forming an epitaxial layer from and on the top surface.

Abstract: A semiconductor device including a FET includes an isolation insulating layer disposed in a trench of the substrate, a gate dielectric layer disposed over a channel region of the substrate, a gate electrode disposed over the gate dielectric layer, a source and a drain disposed adjacent to the channel region, and an embedded insulating layer disposed below the source, the drain and the gate electrode and both ends of the embedded insulating layer are connected to the isolation insulating layer.

Abstract: A method of preparing a solution for forming a doped gel monolith includes providing a first substance including a metal alkoxide. The method further includes providing a second substance including a catalyst. The method further includes providing a chemical including a dopant. The method further includes forming a solution including the dopant, said forming including mixing the first substance and the second substance together. The method further includes cooling the solution to a mixture temperature which is at or below zero degrees Celsius, wherein the solution has a significantly longer gelation time at the mixture temperature than at room temperature.

Abstract: A method of manufacturing a xerogel monolith having a pore diameter distribution includes preparing a first solution comprising metal alkoxide and preparing a second solution comprising a catalyst. A third solution is prepared by mixing the first solution and the second solution together. At least one of the first, second, and third solutions is cooled to achieve a mixture temperature for the third solution which is substantially below room temperature, wherein the third solution has a significantly longer gelation time at the mixture temperature as compared to a room temperature gelation time for the third solution. The method further includes allowing the third solution to gel, thereby forming a wet gel monolith. The method further includes forming the xerogel monolith by drying the wet gel monolith.

Abstract: A method of forming a gel monolith includes preparing a first solution comprising metal alkoxide and preparing a second solution comprising a catalyst. A third solution is prepared by mixing the first solution and the second solution together. At least one of the first, second, and third solutions is cooled to achieve a mixture temperature for the third solution which is substantially below room temperature, wherein the third solution has a significantly longer gelation time at the mixture temperature as compared to a room temperature gelation time for the third solution. The method further includes allowing the third solution to gel, thereby forming the gel monolith.

Abstract: A mold is configured to form a gel monolith including a first gel portion and a second gel portion. The mold includes a base including a first hydrophobic surface. The mold further includes a tubular outer wall including a second hydrophobic surface, and the outer wall is coupled to the base. The mold further includes a removable tubular insert including an inner surface and an outer hydrophobic surface. The insert is removably coupled to the base.

Abstract: A method forms an optical fiber preform. The method includes forming a sol-gel-derived rod having a first diameter. Forming the sol-gel-derived rod includes preparing a sol-gel solution including at least 3 mole % of a catalyst. The sol-gel solution is allowed to undergo gelation to form a wet gel monolith. The wet gel monolith is dried and shrunk by exposing the wet gel monolith to a temporal temperature profile, thereby forming a xerogel monolith. The xerogel monolith is consolidated, thereby forming the sol-gel-derived rod. The method further includes drawing the sol-gel-derived rod to substantially reduce its diameter, thereby forming a drawn rod having a second diameter less than the first diameter.

Abstract: A method of manufacturing a xerogel monolith having a pore diameter distribution includes preparing a first solution comprising metal alkoxide and preparing a second solution comprising a catalyst. A third solution is prepared by mixing the first solution and the second solution together. At least one of the first, second, and third solutions is cooled to achieve a mixture temperature for the third solution which is substantially below room temperature, wherein the third solution has a significantly longer gelation time at the mixture temperature as compared to a room temperature gelation time for the third solution. The method further includes allowing the third solution to gel, thereby forming a wet gel monolith. The method further includes forming the xerogel monolith by drying the wet gel monolith.

Abstract: A method of fabricating a halogen-doped glass includes providing a gel monolith having a first halogen content. The method further includes reducing an impurity concentration of the gel monolith. The method further includes consolidating the gel monolith into a glass having a second halogen content. The second halogen content is less than or equal to the first halogen content. A halogen-doped glass has a fluorine content in a range between approximately 0.5 wt. % and approximately 4 wt. %, a chlorine content less than 100 parts per million, and an OH content less than one part per million.

Abstract: A process which uses sol-gel to process oxide-based monoliths which are virtually free of cracks, without nullifying the desired attributes of the oxide-based monoliths. The method comprises substantially drying a wet porous gel monolith by removing a portion of the liquid from the pores of the gel monolith while the gel monolith remains wet, shrinking in size, and becoming correspondingly more dense, then removing the remaining portion of the liquid from the pores of the gel monolith such that the outer region of the gel monolith is not dried before the inner region of the gel monolith is dried. The gel monolith is substantially dried under conditions in which the liquid evaporation rate is no greater than the pore liquid diffusion rate.

Abstract: A mold is configured to form a gel monolith including a first gel portion and a second gel portion. The mold includes a base including a first hydrophobic surface. The mold further includes a tubular outer wall including a second hydrophobic surface, and the outer wall is coupled to the base. The mold further includes a removable tubular insert including an inner surface and an outer hydrophobic surface. The insert is removably coupled to the base.

Abstract: A method forms an optical fiber preform. The method includes forming a sol-gel-derived rod having a first diameter. Forming the sol-gel-derived rod includes preparing a sol-gel solution including at least 3 mole % of a catalyst. The sol-gel solution is allowed to undergo gelation to form a wet gel monolith. The wet gel monolith is dried and shrunk by exposing the wet gel monolith to a temporal temperature profile, thereby forming a xerogel monolith. The xerogel monolith is consolidated, thereby forming the sol-gel-derived rod. The method further includes drawing the sol-gel-derived rod to substantially reduce its diameter, thereby forming a drawn rod having a second diameter less than the first diameter.

Abstract: An optical preform includes plural material components including a core material and a cladding material. A component of the optical preform is manufactured by a process of preparing a sol-gel solution comprising at least 3 mole % of a catalyst. The process further includes forming a wet gel monolith by allowing the sol-gel solution to undergo gelation. The process further includes drying and shrinking the wet gel monolith by exposing the wet gel monolith to a temporal temperature profile.

Abstract: A method of preparing a solution for forming a doped gel monolith includes providing a first substance including a metal alkoxide. The method further includes providing a second substance including a catalyst. The method further includes providing a chemical including a dopant. The method further includes forming a solution including the dopant, said forming including mixing the first substance and the second substance together. The method further includes cooling the solution to a mixture temperature which is at or below zero degrees Celsius, wherein the solution has a significantly longer gelation time at the mixture temperature than at room temperature.

Abstract: A method of manufacturing a xerogel monolith having a pore diameter distribution includes preparing a first solution comprising metal alkoxide and preparing a second solution comprising a catalyst. A third solution is prepared by mixing the first solution and the second solution together. At least one of the first, second, and third solutions is cooled to achieve a mixture temperature for the third solution which is substantially below room temperature, wherein the third solution has a significantly longer gelation time at the mixture temperature as compared to a room temperature gelation time for the third solution. The method further includes allowing the third solution to gel, thereby forming a wet gel monolith. The method further includes forming the xerogel monolith by drying the wet gel monolith.

Abstract: A method of forming a gel monolith includes preparing a first solution comprising metal alkoxide and preparing a second solution comprising a catalyst. A third solution is prepared by mixing the first solution and the second solution together. At least one of the first, second, and third solutions is cooled to achieve a mixture temperature for the third solution which is substantially below room temperature, wherein the third solution has a significantly longer gelation time at the mixture temperature as compared to a room temperature gelation time for the third solution. The method further includes allowing the third solution to gel, thereby forming the gel monolith.