Abstract: A semiconductor device structure, along with methods of forming such, are described. In one embodiment, a semiconductor device structure is provided. The semiconductor device structure includes a substrate having a front side and a back side opposing the front side, a gate stack disposed on the front side of the substrate, and a first source/drain feature and a second source/drain feature disposed in opposing sides of the gate stack. Each first source/drain feature and second source/drain feature comprises a first side and a second side, and a portion of the back side of the substrate is exposed to an air gap.

Abstract: A first fin structure is disposed over a substrate. The first fin structure contains a semiconductor material. A gate dielectric layer is disposed over upper and side surfaces of the first fin structure. A gate electrode layer is formed over the gate dielectric layer. A second fin structure is disposed over the substrate. The second fin structure is physically separated from the first fin structure and contains a ferroelectric material. The second fin structure is electrically coupled to the gate electrode layer.

Abstract: The present disclosure provides a semiconductor device and a method of manufacturing the semiconductor device. The semiconductor device includes channel members vertically stacked above a substrate, a gate structure engaging the channel members, a gate sidewall spacer disposed on a sidewall of the gate structure, an epitaxial feature abutting end portions of the channel members, and inner spacers interposing the gate structure and the epitaxial feature. The end portion of at least one of the channel members includes a first dopant. A concentration of the first dopant in the end portion of the at least one of the channel members is higher than in a center portion of the at least one of the channel members. The concentration of the first dopant in the end portion of the at least one of the channel members is higher than in an outer portion of the epitaxial feature.

Abstract: Embodiments of the present disclosure provide a semiconductor device structure including a first channel layer formed of a first material, wherein the first channel layer has a first width, a second channel layer formed of a second material different from the first material, wherein the second channel layer has a second width less than the first width, and the second channel layer is in contact with a first surface of the first channel layer. The structure also includes a third channel layer formed of the second material, wherein the third channel layer has a third width less than the second width, and the third channel layer is in contact with a second surface of the first channel layer. The structure also includes a gate dielectric layer conformally disposed on the first channel layer, the second channel layer, and the third channel layer, and a gate electrode layer disposed on the gate dielectric layer.

Abstract: Techniques pertaining to traffic identifier (TID)-based uplink (UL) trigger in wireless communications are described. An apparatus (e.g., an access point (AP)) transmits a TID-based trigger frame to one or more stations (STAs). The apparatus then receives a trigger-based (TB) UL transmission from at least a first STA of the one or more STAs responsive to transmitting the TID-based trigger frame. In receiving the TB UL transmission, the apparatus receives a first type of traffic corresponding to a first TID indicated by first TID information that is associated with the first STA and included in the TID-based trigger frame.

Abstract: A method of preparing a solution for forming a doped gel monolith includes providing a first substance including a metal alkoxide. The method further includes providing a second substance including a catalyst. The method further includes providing a chemical including a dopant. The method further includes forming a solution including the dopant, said forming including mixing the first substance and the second substance together. The method further includes cooling the solution to a mixture temperature which is at or below zero degrees Celsius, wherein the solution has a significantly longer gelation time at the mixture temperature than at room temperature.

Abstract: A method of manufacturing a xerogel monolith having a pore diameter distribution includes preparing a first solution comprising metal alkoxide and preparing a second solution comprising a catalyst. A third solution is prepared by mixing the first solution and the second solution together. At least one of the first, second, and third solutions is cooled to achieve a mixture temperature for the third solution which is substantially below room temperature, wherein the third solution has a significantly longer gelation time at the mixture temperature as compared to a room temperature gelation time for the third solution. The method further includes allowing the third solution to gel, thereby forming a wet gel monolith. The method further includes forming the xerogel monolith by drying the wet gel monolith.

Abstract: A method of forming a gel monolith includes preparing a first solution comprising metal alkoxide and preparing a second solution comprising a catalyst. A third solution is prepared by mixing the first solution and the second solution together. At least one of the first, second, and third solutions is cooled to achieve a mixture temperature for the third solution which is substantially below room temperature, wherein the third solution has a significantly longer gelation time at the mixture temperature as compared to a room temperature gelation time for the third solution. The method further includes allowing the third solution to gel, thereby forming the gel monolith.

Abstract: A mold is configured to form a gel monolith including a first gel portion and a second gel portion. The mold includes a base including a first hydrophobic surface. The mold further includes a tubular outer wall including a second hydrophobic surface, and the outer wall is coupled to the base. The mold further includes a removable tubular insert including an inner surface and an outer hydrophobic surface. The insert is removably coupled to the base.

Abstract: A method forms an optical fiber preform. The method includes forming a sol-gel-derived rod having a first diameter. Forming the sol-gel-derived rod includes preparing a sol-gel solution including at least 3 mole % of a catalyst. The sol-gel solution is allowed to undergo gelation to form a wet gel monolith. The wet gel monolith is dried and shrunk by exposing the wet gel monolith to a temporal temperature profile, thereby forming a xerogel monolith. The xerogel monolith is consolidated, thereby forming the sol-gel-derived rod. The method further includes drawing the sol-gel-derived rod to substantially reduce its diameter, thereby forming a drawn rod having a second diameter less than the first diameter.

Abstract: A method of manufacturing a xerogel monolith having a pore diameter distribution includes preparing a first solution comprising metal alkoxide and preparing a second solution comprising a catalyst. A third solution is prepared by mixing the first solution and the second solution together. At least one of the first, second, and third solutions is cooled to achieve a mixture temperature for the third solution which is substantially below room temperature, wherein the third solution has a significantly longer gelation time at the mixture temperature as compared to a room temperature gelation time for the third solution. The method further includes allowing the third solution to gel, thereby forming a wet gel monolith. The method further includes forming the xerogel monolith by drying the wet gel monolith.

Abstract: A method of fabricating a halogen-doped glass includes providing a gel monolith having a first halogen content. The method further includes reducing an impurity concentration of the gel monolith. The method further includes consolidating the gel monolith into a glass having a second halogen content. The second halogen content is less than or equal to the first halogen content. A halogen-doped glass has a fluorine content in a range between approximately 0.5 wt. % and approximately 4 wt. %, a chlorine content less than 100 parts per million, and an OH content less than one part per million.

Abstract: A process which uses sol-gel to process oxide-based monoliths which are virtually free of cracks, without nullifying the desired attributes of the oxide-based monoliths. The method comprises substantially drying a wet porous gel monolith by removing a portion of the liquid from the pores of the gel monolith while the gel monolith remains wet, shrinking in size, and becoming correspondingly more dense, then removing the remaining portion of the liquid from the pores of the gel monolith such that the outer region of the gel monolith is not dried before the inner region of the gel monolith is dried. The gel monolith is substantially dried under conditions in which the liquid evaporation rate is no greater than the pore liquid diffusion rate.

Abstract: An optical preform includes plural material components including a core material and a cladding material. A component of the optical preform is manufactured by a process of preparing a sol-gel solution comprising at least 3 mole % of a catalyst. The process further includes forming a wet gel monolith by allowing the sol-gel solution to undergo gelation. The process further includes drying and shrinking the wet gel monolith by exposing the wet gel monolith to a temporal temperature profile.

Abstract: A mold is configured to form a gel monolith including a first gel portion and a second gel portion. The mold includes a base including a first hydrophobic surface. The mold further includes a tubular outer wall including a second hydrophobic surface, and the outer wall is coupled to the base. The mold further includes a removable tubular insert including an inner surface and an outer hydrophobic surface. The insert is removably coupled to the base.

Abstract: A method forms an optical fiber preform. The method includes forming a sol-gel-derived rod having a first diameter. Forming the sol-gel-derived rod includes preparing a sol-gel solution including at least 3 mole % of a catalyst. The sol-gel solution is allowed to undergo gelation to form a wet gel monolith. The wet gel monolith is dried and shrunk by exposing the wet gel monolith to a temporal temperature profile, thereby forming a xerogel monolith. The xerogel monolith is consolidated, thereby forming the sol-gel-derived rod. The method further includes drawing the sol-gel-derived rod to substantially reduce its diameter, thereby forming a drawn rod having a second diameter less than the first diameter.

Abstract: A method of preparing a solution for forming a doped gel monolith includes providing a first substance including a metal alkoxide. The method further includes providing a second substance including a catalyst. The method further includes providing a chemical including a dopant. The method further includes forming a solution including the dopant, said forming including mixing the first substance and the second substance together. The method further includes cooling the solution to a mixture temperature which is at or below zero degrees Celsius, wherein the solution has a significantly longer gelation time at the mixture temperature than at room temperature.

Abstract: A method of forming a gel monolith includes preparing a first solution comprising metal alkoxide and preparing a second solution comprising a catalyst. A third solution is prepared by mixing the first solution and the second solution together. At least one of the first, second, and third solutions is cooled to achieve a mixture temperature for the third solution which is substantially below room temperature, wherein the third solution has a significantly longer gelation time at the mixture temperature as compared to a room temperature gelation time for the third solution. The method further includes allowing the third solution to gel, thereby forming the gel monolith.

Abstract: A method of manufacturing a xerogel monolith having a pore diameter distribution includes preparing a first solution comprising metal alkoxide and preparing a second solution comprising a catalyst. A third solution is prepared by mixing the first solution and the second solution together. At least one of the first, second, and third solutions is cooled to achieve a mixture temperature for the third solution which is substantially below room temperature, wherein the third solution has a significantly longer gelation time at the mixture temperature as compared to a room temperature gelation time for the third solution. The method further includes allowing the third solution to gel, thereby forming a wet gel monolith. The method further includes forming the xerogel monolith by drying the wet gel monolith.