Abstract: A thin-film solar cell includes a body and a polymer layer. The body includes a first electrode layer, a photoelectric conversion layer, and a second electrode layer, and the polymer layer includes a hardening material and an interface material. The photoelectric conversion layer is disposed between the first electrode layer and the second electrode layer, and the polymer layer surrounds the photoelectric conversion layer, in which the interface material is used for bonding to the hardening material and the photoelectric conversion layer respectively. Therefore, the thin-film solar cell may reduce the Staebler-Wronski Effect generated by the photoelectric conversion layer in the photoelectric conversion procedure. Accordingly, the photoelectric conversion efficiency is improved.

Abstract: A thin-film solar cell and a method for manufacturing the same are presented, in which the dopant concentration turns low in a sloping way. The solar cell includes a substrate, a first contact region, a photoelectric conversion layer, and a second contact region. The first contact region a photoelectric conversion layer, and a second contact region are disposed on the substrate. At least one of the first contact region and the second contact region contains an N-type dopant, and the concentration of the N-type dopant is decreased gradually in a direction towards the photoelectric conversion layer. Through the thin-film solar cell and the method for manufacturing the same, the conversion efficiency of the solar cell is improved, and the thin-film solar cell and the manufacturing method are capable of being integrated with an existing manufacturing process of a solar cell, thereby simplifying the manufacturing process and reducing the cost.

Abstract: In one aspect of the present invention, a photovoltaic panel includes a substrate, a reflective layer formed on the substrate, a first conductive layer formed on the reflective layer, an active layer formed on the first conductive layer, and a second conductive layer formed on the active layer. The reflective layer has an index of refraction and a thickness such that the reflectance spectrum of the photovoltaic device for light incident on the substrate has a maximum in a selected wavelength range in the visible spectrum.

Abstract: A thin-film solar cell module includes a substrate, a plurality of thin-film solar cells, a first ribbon, and a second ribbon. The thin-film solar cells are disposed on the substrate in a first direction, and the thin-film solar cell module has an isolation zone between the two thin-film solar cells next to each other. Each of the thin-film solar cells includes a first electrode layer, a photoelectric conversion layer, and a second electrode layer, in which the photoelectric conversion layer and the second electrode layer are disposed on the first electrode layer with a portion of the first electrode layer exposed. The first ribbon is used for connecting the exposed portion of the first electrode layer in each of the thin-film solar cells, and the second ribbon is used for connecting each of the second electrode layers.

Abstract: A solar cell module. In one embodiment, the solar cell module includes a substrate, a battery unit, a first strip electrode and a second strip electrode. The substrate has a plurality of power generation zones and at least one cutting zone, and the cutting zone is located among the power generation zones. The battery unit is disposed on the power generation zones and the cutting zones of the substrate. The first strip electrode is disposed on the battery unit, and located at a first end power generation zone of the power generation zones. The second strip electrode is disposed on the battery unit, and located at a second end power generation zone of the power generation zones.

Abstract: A crystallizing method for forming a poly-Si film is described as follows. First, forming an activated layer on a substrate, and the molecule structure of the activated layer includes carbon, hydrogen, oxygen and silicon. And then, forming an amorphous silicon film on the activated layer. Finally, performing an annealing process to crystallize the amorphous silicon film and transform it into a poly-Si film.

Abstract: A method and a system for estimating a battery percentage are provided. The method includes the following steps. A coulomb counter calculated battery index (CCBI) relating to an accumulated amount of current flowing out of a battery is obtained. A battery voltage curve tracer calculated battery index (VCBI) relating to a temperature, an output voltage of the battery, and a current flowing out of the battery is obtained. A modified calculated battery index (MCBI) ranging between the CCBI and the VCBI is generated according to the CCBI and the VCBI.

Abstract: A sequential lateral solidification (SLS) mask comprises a plurality of parallelizing repeat patterns. Each of the patterns further comprises a major symmetrical axis and a short axis, and each of the patterns is also composed of first units and second units, in which both the first unit and the second unit comprise respectively a plurality of light transmitting portions and light absorption portions. The first units are positioned in mirror symmetry to the second units via the major symmetrical axis.

Abstract: A thin film transistor is disclosed, comprising a substrate, a polysilicon layer overlying the substrate, a gate insulating layer overlying the polysilicon layer, a gate electrode, a dielectric interlayer overlying the gate electrode and gate insulating layer, and a source/drain electrode overlying the dielectric interlayer. Specifically, the gate electrode comprises a first electrode layer overlying the gate insulating layer and a second electrode layer essentially overlying an upper surface of the first electrode layer. The first and second electrode layers each has substantially the same profile with a taper angle of less than about 90 degrees.

Abstract: A display panel comprises a substrate having a displaying region (such as active organic light emitting region) and a circuit driving region; and a polysilicon layer formed on the substrate and having a first polysilicon portion and a second polysilicon portion respectively corresponding to the displaying region and circuit driving region, wherein the grain size of the second polysilicon portion crystallized by continuous wave (CW) laser annealing method is larger than that of the first polysilicon portion crystallized by excimer laser annealing (ELA) method.

Abstract: A display panel comprises a substrate having a displaying region (such as active organic light emitting region) and a circuit driving region; and a polysilicon layer formed on the substrate and having a first polysilicon portion and a second polysilicon portion respectively corresponding to the displaying region and circuit driving region, wherein the grain size of the second polysilicon portion crystallized by continuous wave (CW) laser annealing method is larger than that of the first polysilicon portion crystallized by excimer laser annealing (ELA) method.

Abstract: A semiconductor device and a method of fabricating a low-temperature polysilicon film are provided. An amorphous silicon film is formed over a substrate. An insulating layer and a laser absorption layer are formed over the amorphous silicon film. A photolithographic and etching process is performed to remove portions of the laser absorption layer and the insulating layer to expose portions of the amorphous silicon film. A laser crystallization process is utilized to convert the amorphous silicon film into a polysilicon film.

Abstract: A thin film transistor is disclosed, comprising a substrate, a polysilicon layer overlying the substrate, a gate insulating layer overlying the polysilicon layer, a gate electrode, a dielectric interlayer overlying the gate electrode and gate insulating layer, and a source/drain electrode overlying the dielectric interlayer. Specifically, the gate electrode comprises a first electrode layer overlying the gate insulating layer and a second electrode layer essentially overlying an upper surface of the first electrode layer. The first and second electrode layers each has substantially the same profile with a taper angle of less than about 90 degrees.

Abstract: A sequential lateral solidification (SLS) mask comprises a plurality of parallelizing repeat patterns. Each of the patterns further comprises a major symmetrical axis and a short axis, and each of the patterns is also composed of first units and second units, in which both the first unit and the second unit comprise respectively a plurality of light transmitting portions and light absorption portions. The first units are positioned in mirror symmetry to the second units via the major symmetrical axis.

Abstract: A method for manufacturing polysilicon layer is provided. At first, a substrate is provided. An amorphous silicon layer having a second region and a first region is formed on the substrate. The first region is thicker than the second region. The amorphous silicon layer is completely melted to form a melted amorphous silicon layer having a first melted region and a second melted region. The temperature of the bottom center of the first melted region is lower than that of the second melted region and that of the top of the first melted region. The melted amorphous silicon layer is crystallized to form a polysilicon layer. The crystallization begins from the bottom center of the first melted region to the second melted region and the top of the first melted region.

Abstract: A crystallizing method for forming a poly-Si film is described as follows. First, forming an activated layer on a substrate, and the molecule structure of the activated layer includes carbon, hydrogen, oxygen and silicon. And then, forming an amorphous silicon film on the activated layer. Finally, performing an annealing process to crystallize the amorphous silicon film and transform it into a poly-Si film.

Abstract: A display panel comprises a substrate having a displaying region (such as active organic light emitting region) and a circuit driving region; and a polysilicon layer formed on the substrate and having a first polysilicon portion and a second polysilicon portion respectively corresponding to the displaying region and circuit driving region, wherein the grain size of the second polysilicon portion crystallized by continuous wave (CW) laser annealing method is larger than that of the first polysilicon portion crystallized by excimer laser annealing (ELA) method.

Abstract: A semiconductor device and a method of fabricating a low-temperature polysilicon film are provided. An amorphous silicon film is formed over a substrate. An insulating layer and a laser absorption layer are formed over the amorphous silicon film. A photolithographic and etching process is performed to remove portions of the laser absorption layer and the insulating layer to expose portions of the amorphous silicon film. A laser crystallization process is utilized to convert the amorphous silicon film into a polysilicon film.

Abstract: A method for manufacturing polysilicon layer is provided. At first, a substrate is provided. An amorphous silicon layer having a second region and a first region is formed on the substrate. The first region is thicker than the second region. The amorphous silicon layer is completely melted to form a melted amorphous silicon layer having a first melted region and a second melted region. The temperature of the bottom center of the first melted region is lower than that of the second melted region and that of the top of the first melted region. The melted amorphous silicon layer is crystallized to form a polysilicon layer. The crystallization begins from the bottom center of the first melted region to the second melted region and the top of the first melted region.

Abstract: An apparatus for laser annealing an amorphous silicon film is provided. The amorphous silicon film includes a first region and a second region not overlapped with the first region. The apparatus comprises: a laser beam source module providing a laser beam; a beam splitter, disposed on a path of the laser beam, splitting the laser beam into a first laser beam and a second laser beam; a first photomask disposed on an optical path of the first laser beam and in front of the amorphous silicon film; and a second photomask disposed an optical path of the second laser beam and in front of the amorphous silicon film; wherein the first laser beam is emitted to the first region, and the second laser beam is emitted to the amorphous silicon film in the second region after the amorphous silicon film in the first region is re-crystallized.