Abstract: In a method of manufacturing a semiconductor device, a fin structure is formed by patterning a semiconductor layer, and an annealing operation is performed on the fin structure. In the patterning of the semiconductor layer, a damaged area is formed on a sidewall of the fin structure, and the annealing operation eliminates the damaged area.

Abstract: The application discloses examples of a device housing of an electronic device including a magnesium-alloy substrate. The device housing further including a treatment layer applied over the magnesium-alloy substrate and a metallic coating layer applied over the treatment layer to provide a metallic luster. Further, a paint coating layer is disposed over a first portion of the metallic coating layer. Further, a top coating layer is applied over the paint coating layer and a visible second portion of the metallic coating layer.

Abstract: A light guide assembly is configured to diffuse a side-entry backlight and uniformly emit a surface light. The light guide assembly includes a light guide plate, a reflective sheet, and an adhesive layer. The light guide plate includes a light incident surface, a light output surface, and a bottom surface. The reflective sheet reflects the backlight emitted from the bottom surface. The light output surface is opposite to the bottom surface. The light incident surface is coupled between the light output surface and the bottom surface. The backlight enters the light guide plate from the light incident surface. The bottom surface includes a bonding region and a scattering region. The bonding region is located on at least one peripheral side of the bottom surface. The adhesive layer is adhered between the reflective sheet and the bonding region of the light guide plate.