Abstract: A system for use in a poultry house includes a control server, a network gateway disposed in the poultry house and equipping with a wireless communication capability; a movable sensor module disposed in the poultry house, wherein the movable sensor module is movable within the poultry house for obtaining a plurality of environmental parameters associated with specific locations within the poultry house, and a sampling machine disposed in the poultry house for obtaining a sample of poultry waste on the ground of the poultry house. The movable sensor module transmits the environmental parameters to the network gateway, and the network gateway transmits the environmental parameters to the control server for processing the environmental parameters.

Abstract: A method of screening new psychoactive substance is provided, including providing a sample; placing the sample on chromatographic paper; ionizing the sample on the chromatographic paper by a direct analysis in real time (DART); performing a mass spectrometry analysis on the ionized sample to obtain a sample mass spectrum; and comparing a known standard mass spectrum with the sample mass spectrum, in which when a profile of the known standard mass spectrum is the same as a profile of the sample mass spectrum and the known standard mass spectrum is not exactly the same as the sample mass spectrum, the sample is determined to be the new psychoactive substance. A platform for screening new psychoactive substance is also provided to quickly screen out the new psychoactive substance.

Abstract: A battery back passivation structure, a manufacturing method therefor, and a solar cell, the manufacturing method comprising: introducing a dopant gas and a first reaction gas into a coating device, and depositing a doped passivation layer on the back side of a silicon wafer (1); and introducing a second reaction gas into the coating device, and directly or indirectly depositing an internal reflection layer on the surface of the doped passivation layer away from the silicon wafer (1). The described battery back passivation structure comprises a doped passivation layer and an internal reflection layer that are stacked on the back side of the silicon wafer (1), and has enhanced passivation capability.

Abstract: A method of forming a semiconductor device is disclosed. The method includes forming a plurality of isolation regions on a semiconductor substrate, forming a protective layer in a resistor region of the semiconductor substrate, after forming the protective layer, etching a gate dielectric layer to form first and second gate dielectric layers of a transistor in a transistor region of the semiconductor substrate, removing the protective layer, forming first and second dummy gate stacks over the first and second gate dielectric layers, respectively, forming a resistor in the resistor region, forming third and fourth dummy gate stacks over the resistor, and replacing each of the first, second, third, and fourth dummy gate stacks with a conductive material.

Abstract: A method includes obtaining an engineering schematic containing multiple symbols and connections involving the symbols, where different ones of the symbols in the engineering schematic represent different types of equipment. The method also includes identifying visual features of the engineering schematic. The method further includes processing the visual features using at least one trained machine learning model to (i) identify boundaries around the symbols in the engineering schematic and (ii) classify the symbols in the engineering schematic into multiple classifications, where different ones of the classifications are associated with different types of symbols.

Abstract: A semiconductor package includes an array of through-substrate-via (TSV) structures comprising a number (O) of TSV structures, wherein the array comprises a number (M) of active TSV structures; a number (N) of contact structures, the contact structures comprising a plurality of pairs configured to receive an input test signal and provide an output test signal, respectively; and a plurality of binary-tree branches, each of the plurality of binary-tree branches electrically coupling a first one of the active TSV structures to a second one of the active TSV structures and a third one of the active TSV structures.

Abstract: A power converter module includes a ground terminal, an input voltage terminal configured to receive a raw input voltage, and an interconnection terminal configured to provide a regulated output voltage to a load such as a SOC or SIP system to be powered. A voltage regulator is connected to the ground terminal and the input voltage terminal. An inductor has an inductor output connected to the interconnection terminal.

Abstract: A cable strain relief structure includes a conducting seat, a cable, a supporting element, and an insulating sleeve. The conducting seat includes an insulating body and a conducting element disposed in the insulating body. The cable passes through the insulating body and is electrically connected to the conducting element. The supporting element includes a plurality of ridges arranged spacedly and annularly on the outer periphery of the cable. The ridges are extended in the direction along the cable and away from the insulating body. The insulating sleeve covers the supporting element and is extended in the direction along the cable.

Abstract: Some embodiments of the present invention relate to a technical field of N-type TOPCon solar cells, and disclose a back-side metal electrode of an N-type TOPCon solar cell. The back-side metal electrode includes a substrate, a plurality of first silver fine grids disposed on a passivation film which is on a back side of the substrate, a plurality of second aluminum fine grids overlaid on the plurality of first silver fine grids, and a plurality of first silver main grids disposed perpendicular to the plurality of first silver fine grids. Each of the plurality of first silver main grids is a segmented structure. The back-side metal electrode further includes a plurality of second aluminum main grids, which are formed, in a printing manner, between any two adjacent grid segments of a plurality of grid segments and around each of the plurality of grid segments.

Abstract: A tissue resecting or other medical device includes a handle coupled to an elongated shaft. A radiofrequency (RF) electrode is carried at a distal end of the elongated shaft, and the electrode is moveable across a window in a sleeve or other component of the shaft. The shaft has an interior channel connectable to a negative pressure source to remove debris from the channel. A motor is carried by the handle and operatively coupled to the electrode for moving the electrode relative to the window. An electronic image sensor and lens are disposed at a distal end of the shaft, and a plurality of conductors may extend through the shaft to the image sensor. The image sensor, lens and sensor conductors are disposed within a first tubular member, and an LED or other light source is also positioned at a distal end of the shaft with LED conductors or leads extending through a second tubular member of the shaft to the LED.

Abstract: A method includes obtaining an engineering schematic containing multiple symbols and connections involving the symbols, where different ones of the symbols in the engineering schematic represent different types of equipment. The method also includes identifying visual features of the engineering schematic. The method further includes processing the visual features using at least one trained machine learning model to (i) identify boundaries around the symbols in the engineering schematic and (ii) classify the symbols in the engineering schematic into multiple classifications, where different ones of the classifications are associated with different types of symbols.

Abstract: A method of forming a semiconductor device is disclosed. The method includes forming a plurality of isolation regions on a semiconductor substrate, forming a protective layer in a resistor region of the semiconductor substrate, after forming the protective layer, etching a gate dielectric layer to form first and second gate dielectric layers of a transistor in a transistor region of the semiconductor substrate, removing the protective layer, forming first and second dummy gate stacks over the first and second gate dielectric layers, respectively, forming a resistor in the resistor region, forming third and fourth dummy gate stacks over the resistor, and replacing each of the first, second, third, and fourth dummy gate stacks with a conductive material.

Abstract: A device includes a substrate, a first conductive layer on the substrate, a first conductive via, and further conductive layers and conductive vias between the first conductive via and the substrate. The first conductive via is between the substrate and the first conductive layer, and is electrically connected to the first conductive layer. The first conductive via extends through at least two dielectric layers, and has thickness greater than about 8 kilo-Angstroms. An inductor having high quality factor is formed in the first conductive layer and also includes the first conductive via.

Abstract: A brake device of a rotating motor is disclosed and includes a base, an upper plate, a sliding plate, a transmission component, a lining plate, a connection element, a planar plate and an elastic component. A rotating shaft runs through the base in an axial direction. The sliding plate is arranged between the base and the upper plate, and driven by the drive module. The transmission component is sleeved and fixed on the rotating shaft, and includes a sleeved peripheral edge, a limiting portion, and a perforation. The limiting portion is protruded outwardly from the sleeved peripheral edge in a radial direction, and the perforation is passed through the limiting portion along the axial direction. The lining plate sleeved on the sleeved peripheral edge is located between the sliding plate and the upper plate. The elastic component is arranged between the planar plate and the limiting portion.

Abstract: A method of establishing a cancer screening model is provided, including: providing a plurality of samples and a plurality of corresponding cancer states; analyzing these samples by a low-resolution mass spectrometer to obtain a plurality of mass spectral data, wherein the low-resolution mass spectrometer is undertaken a mass accuracy level above 5 ppm and a mass resolution (m/?m) below 10,000; inputting these mass spectral data into a machine learning algorithm to obtain a plurality of markers by a feature selection method; and using these markers and these cancer states by the machine learning algorithms to establish cancer screening model.

Abstract: A power converter module includes a ground terminal, an input voltage terminal configured to receive a raw input voltage, and an interconnection terminal configured to provide a regulated output voltage to a load such as a SOC or SIP system to be powered. A voltage regulator is connected to the ground terminal and the input voltage terminal. An inductor has an inductor output connected to the interconnection terminal.

Abstract: A semiconductor structure includes a substrate, a first support layer, and multiple support pillars. The substrate includes a monitoring region. The monitoring region includes a first region and a second region. The first support layer is located in the first region and the second region, and is located above the substrate. The support pillars are located in the second region. The support pillars penetrate the first support layer and are not connected to each other. Each of the support pillars extends toward the substrate.

Abstract: A method of manufacturing a semiconductor device is provided. A permalloy device is received. An interposer die is formed. A conductive coil is formed over a substrate, and the conductive coil includes a bottom metal layer over the substrate, a middle metal layer and a top metal layer interconnected to each other. The permalloy device is disposed in the middle metal layer through a pick and place operation before forming the top metal layer of the conductive coil. A semiconductor die is bonded to the interposer die. The permalloy device has a polygonal ring shape wrapped with the conductive coil.