Abstract: A method includes etching a dielectric layer of a substrate to form an opening in the dielectric layer, forming a metal layer extending into the opening, performing an anneal process, so that a bottom portion of the metal layer reacts with a semiconductor region underlying the metal layer to form a source/drain region, performing a plasma treatment process on the substrate using a process gas including hydrogen gas and a nitrogen-containing gas to form a silicon-and-nitrogen-containing layer, and depositing a metallic material on the silicon-and-nitrogen-containing layer.

Abstract: A semiconductor device structure is provided. The semiconductor device has a first dielectric wall between an n-type source/drain region and a p-type source/drain region to physically and electrically isolate the n-type source/drain region and the p-type source/drain region from each other. A second dielectric wall is formed between a first channel region connected to the n-type source/drain region and a second channel region connected to the p-type source/drain region. A contact is formed to physically and electrically connect the n-type source/drain region with the p-type source/drain region, wherein the contact extends over the first dielectric wall. The first electric wall has a gradually decreasing width W5 towards a tip of the dielectric wall from a top contact position between the first dielectric wall and either the n-type source/drain region or the p-type source/drain region.

Abstract: A radio device includes a first antenna array and an actuator. The first antenna array is configured to transmit a radiation beam to a remote device. The actuator is configured to change an orientation of the first antenna array, whereby a beam direction of the radiation beam is changed according to a change of the orientation of the first antenna array. The beam direction of the radiation beam is adjusted according to a beam steering mechanism performed by the first antenna array.

Abstract: A method for generating and outputting a message is implemented using an electronic device the stores a computer program product and a text database. The text database includes a main message template, a template text that includes a placeholder, and a word group that includes a plurality of preset words for replacing the placeholder. The method includes: in response to receipt of a command for execution of the computer program product, displaying an editing interface including the main message template; in response to receipt of user operation of a selection of the main message template, displaying the template text; in response to receipt of user operation of a selection of one of the preset words via the user interface, generating an edited text by replacing the placeholder with the one of the preset words in the template text; and outputting the edited text as a message.

Abstract: Disclosed is a self-powered formaldehyde sensing device, comprising: a triboelectric material electrode layer including a first substrate and a first electrode layer formed on the first substrate; a triboelectric material dielectric layer including a second substrate, a second electrode layer formed on the second substrate, a dielectric reacting layer formed on the second electrode layer, and a reaction modification layer formed on the dielectric reacting layer to surface-modify the dielectric reacting layer, the reaction modification layer being a phosphomolybdic acid complex (cPMA) layer, the phosphomolybdic acid complex of the phosphomolybdic acid complex layer being obtained by dissolving 4,4?-bipyridine (BPY) in isopropanol (IPA) and then mixing with phosphomolybdic acid (PMA) solution; an elastic spacer; and an external circuit.

Abstract: A semiconductor device and method of formation are provided. The semiconductor device comprises a silicide layer over a substrate, a metal plug in an opening defined by a dielectric layer over the substrate, a first metal layer between the metal plug and the dielectric layer and between the metal plug and the silicide layer, a second metal layer over the first metal layer, and an amorphous layer between the first metal layer and the second metal layer.

Abstract: A semiconductor package is provided. The semiconductor package includes a heat dissipation substrate including a first conductive through-via embedded therein; a sensor die disposed on the heat dissipation substrate; an insulating encapsulant laterally encapsulating the sensor die; a second conductive through-via penetrating through the insulating encapsulant; and a first redistribution structure and a second redistribution structure disposed on opposite sides of the heat dissipation substrate. The second conductive through-via is in contact with the first conductive through-via. The sensor die is located between the second redistribution structure and the heat dissipation substrate. The second redistribution structure has a window allowing a sensing region of the sensor die receiving light. The first redistribution structure is electrically connected to the sensor die through the first conductive through-via, the second conductive through-via and the second redistribution structure.

Abstract: Systems, methods and devices are provided, which can include an engineering change order (ECO) base. A base layout cell includes metal layer regions, conductive gate patterns arranged above metal layer regions; oxide definition (OD) patterns, metal-zero layer over oxide-definition (metal-zero) patterns, at least one cut metal layer (CMD) pattern; and at least one via region. The base layout cell can be implemented in at least two non-identical functional cells. A first functional cell of the at least two non-identical functional cells includes first interconnection conductive patterns arranged connecting metal-zero structures corresponding to at least two metal-zero patterns in a first layout, and a second functional cell of the at least two non-identical functional cells includes second interconnection conductive patterns arranged connecting metal-zero structures corresponding to at least two metal-zero patterns in a second layout.

Abstract: The embodiments described herein are directed to a method for reducing fin oxidation during the formation of fin isolation regions. The method includes providing a semiconductor substrate with an n-doped region and a p-doped region formed on a top portion of the semiconductor substrate; epitaxially growing a first layer on the p-doped region; epitaxially growing a second layer different from the first layer on the n-doped region; epitaxially growing a third layer on top surfaces of the first and second layers, where the third layer is thinner than the first and second layers. The method further includes etching the first, second, and third layers to form fin structures on the semiconductor substrate and forming an isolation region between the fin structures.

Abstract: The embodiments described herein are directed to a method for reducing fin oxidation during the formation of fin isolation regions. The method includes providing a semiconductor substrate with an n-doped region and a p-doped region formed on a top portion of the semiconductor substrate; epitaxially growing a first layer on the p-doped region; epitaxially growing a second layer different from the first layer on the n-doped region; epitaxially growing a third layer on top surfaces of the first and second layers, where the third layer is thinner than the first and second layers. The method further includes etching the first, second, and third layers to form fin structures on the semiconductor substrate and forming an isolation region between the fin structures.

Abstract: A method of fabricating a semiconductor structure includes the following steps. A semiconductor wafer is provided. A plurality of first surface mount components and a plurality of second surface mount components are bonded onto the semiconductor wafer, wherein a first portion of each of the second surface mount components is overhanging a periphery of the semiconductor wafer. A first barrier structure is formed in between the second surface mount components and the semiconductor wafer. An underfill structure is formed under a second portion of each of the second surface mount components, wherein the first barrier structure blocks the spreading of the underfill structure from the second portion to the first portion.

Abstract: A lithium-ion coin battery having a winding core as an anode lead and a cathode lead is provided in the present invention, including a winding core having a first electrode section, a second electrode section and an insulating section isolating the first electrode section and the second electrode section, an electrode winding having a first electrode sheet, a second electrode sheet and a separator isolating between the first electrode sheet and the second electrode sheet, wherein the electrode winding winds on the winding core, and the first electrode sheet is electrically coupled with the first electrode section of the winding core, the second electrode sheet is electrically coupled with the second electrode section of the winding core, and the separator is coupled with the insulating section of the winding core.

Abstract: A method for implementation by a laser spectrometer is provided. The method includes first scanning, by a control unit using a first set of laser spectrometer operating parameters, a first wavelength range by adjusting a wavelength of light of a beam emitted by a laser light source and passing through a sample gas. The first wavelength range encompasses a first spectral feature corresponding to a first constituent. The method also includes at least one second scanning, by the control unit using a second set of laser spectrometer operating parameters, a second wavelength range by adjusting the wavelength of light emitted from the laser light source and passing through the sample gas. The second wavelength range has a second spectral feature corresponding to at least one second constituent. The control unit also determines a first concentration of the first constituent and a second concentration of the at least one second constituent.

Abstract: The present disclosure provides a method for preparing an extract of Chrysanthemum morifolium with an effect of treating skin diseases, including: (a) performing an extraction procedure on Chrysanthemum morifolium with an extraction solvent to obtain an extract solution; and (b) adding at least one glycoside hydrolases to the extract solution to make an enzyme reaction occur to produce a precipitate, wherein the precipitate is the extract of Chrysanthemum morifolium with an effect of treating skin diseases.

Abstract: A method for implementation by a laser spectrometer is provided. The method includes first scanning, by a control unit using a first set of laser spectrometer operating parameters, a first wavelength range by adjusting a wavelength of light of a beam emitted by a laser light source and passing through a sample gas. The first wavelength range encompasses a first spectral feature corresponding to a first constituent. The method also includes at least one second scanning, by the control unit using a second set of laser spectrometer operating parameters, a second wavelength range by adjusting the wavelength of light emitted from the laser light source and passing through the sample gas. The second wavelength range has a second spectral feature corresponding to at least one second constituent. The control unit also determines a first concentration of the first constituent and a second concentration of the at least one second constituent.

Abstract: The present disclosure provides a method for preparing an extract of Chrysanthemum morifolium with an effect of treating skin diseases, including: (a) performing an extraction procedure on Chrysanthemum morifolium with an extraction solvent to obtain an extract solution; and (b) adding at least one glycoside hydrolases to the extract solution to make an enzyme reaction occur to produce a precipitate, wherein the precipitate is the extract of Chrysanthemum morifolium with an effect of treating skin diseases.

Abstract: A hemoglobin-detecting electrode test strip is provided, which includes an insulating substrate; an electrode system; an insulating layer that partially covers the electrode system so that one uncovered portion on the electrode system forms an electrochemical reaction region and another uncovered portion on the electrode system forms a conductive wire connecting region; and a reaction layer including an electron mediator and an anion surfactant and at least partially covering the electrochemical reaction region. A device for detecting hemoglobin is further provided, which includes the hemoglobin-detecting electrode test strip and an electrochemical sensor.

Abstract: A hemoglobin-detecting electrode test strip is provided, which includes an insulating substrate; an electrode system; an insulating layer that partially covers the electrode system so that one uncovered portion on the electrode system forms an electrochemical reaction region and another uncovered portion on the electrode system forms a conductive wire connecting region; and a reaction layer including an electron mediator and an anion surfactant and at least partially covering the electrochemical reaction region. A device for detecting hemoglobin is further provided, which includes the hemoglobin-detecting electrode test strip and an electrochemical sensor.