Patents by Inventor Chih-Hsuan Hsieh

Chih-Hsuan Hsieh has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • RADIO DEVICE AND CONTROL METHOD THEREOF
    Publication number: 20240106114
    Abstract: A radio device includes a first antenna array and an actuator. The first antenna array is configured to transmit a radiation beam to a remote device. The actuator is configured to change an orientation of the first antenna array, whereby a beam direction of the radiation beam is changed according to a change of the orientation of the first antenna array. The beam direction of the radiation beam is adjusted according to a beam steering mechanism performed by the first antenna array.
    Type: Application
    Filed: September 26, 2022
    Publication date: March 28, 2024
    Inventors: Shih-Wei HSIEH, Wei-Hsuan CHANG, Chih-Wei LEE, Shyh-Tirng FANG
  • Target structure of physical vapor deposition
    Patent number: 11649543
    Abstract: A sputtering target structure includes a body having a first side and an opposing second side. A first sputtering target is coupled to the first side of the body. The first sputtering target includes a first material. A second sputtering target is coupled to the second side of the body. The second sputtering target includes a second material. A rotation mechanism is coupled to the body and is configured to allow rotation of the body from a first orientation to a second orientation.
    Type: Grant
    Filed: February 8, 2022
    Date of Patent: May 16, 2023
    Assignee: Taiwan Semiconductor Manufacturing Co., Ltd.
    Inventors: Ping-Yuan Chen, Hung-Cheng Chen, Chih-Hsuan Hsieh, Yu-Hsuan Wang
  • TARGET STRUCTURE OF PHYSICAL VAPOR DEPOSITION
    Publication number: 20220162744
    Abstract: A sputtering target structure includes a body having a first side and an opposing second side. A first sputtering target is coupled to the first side of the body. The first sputtering target includes a first material. A second sputtering target is coupled to the second side of the body. The second sputtering target includes a second material. A rotation mechanism is coupled to the body and is configured to allow rotation of the body from a first orientation to a second orientation.
    Type: Application
    Filed: February 8, 2022
    Publication date: May 26, 2022
    Applicant: Taiwa Semiconductor Manufacturing Co, Ltd.
    Inventors: Ping-Yuan CHEN, Hung-Cheng CHEN, Chih-Hsuan HSIEH, Yu-Hsuan WANG
  • Multiple nozzle slurry dispense scheme
    Patent number: 11318579
    Abstract: An apparatus includes a slurry dispensing arm, multiple nozzles formed on the slurry dispensing arm, and a slurry supply module connected to the slurry dispensing arm. The slurry supply module is configured to provide slurry to the multiple nozzles and the multiple nozzles are configured to dispense the slurry.
    Type: Grant
    Filed: July 1, 2019
    Date of Patent: May 3, 2022
    Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.
    Inventors: Chih-Hsuan Hsieh, Tseng-Hsuan Huang, Chen-Hsiang Liao
  • Target structure of physical vapor deposition
    Patent number: 11268186
    Abstract: A sputtering target structure includes a body having a first side and an opposing second side. A first sputtering target is coupled to the first side of the body. The first sputtering target includes a first material. A second sputtering target is coupled to the second side of the body. The second sputtering target includes a second material. A rotation mechanism is coupled to the body and is configured to allow rotation of the body from a first orientation to a second orientation.
    Type: Grant
    Filed: July 17, 2020
    Date of Patent: March 8, 2022
    Assignee: Taiwan Semiconductor Manufacturing Co., Ltd.
    Inventors: Ping-Yuan Chen, Hung-Cheng Chen, Chih-Hsuan Hsieh, Yu-Hsuan Wang
  • Methods of fabricating Fin Field Effect Transistor (FinFET) devices with uniform tension using implantations on top and sidewall of Fin
    Patent number: 10651296
    Abstract: Methods of fabricating FinFET devices are provided. The method includes forming a fin over a substrate. The method also includes implanting a first dopant on a top surface of the fin and implanting a second dopant on a sidewall surface of the fin. The first dopant is different from the second dopant. The method further includes forming an oxide layer on the top surface and the sidewall surface of the fin, and forming a gate electrode layer over the oxide layer.
    Type: Grant
    Filed: July 30, 2018
    Date of Patent: May 12, 2020
    Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.
    Inventors: Tsung-Han Wu, Tong-Min Weng, Chun-Yi Huang, Po-Ching Lee, Chih-Hsuan Hsieh, Shu-Ching Tsai
  • METHODS OF FABRICATING FIN FIELD EFFECT TRANSISTOR (FINFET) DEVICES USING IMPLANTATIONS ON TOP AND SIDEWALL OF FIN
    Publication number: 20200035815
    Abstract: Methods of fabricating FinFET devices are provided. The method includes forming a fin over a substrate. The method also includes implanting a first dopant on a top surface of the fin and implanting a second dopant on a sidewall surface of the fin. The first dopant is different from the second dopant. The method further includes forming an oxide layer on the top surface and the sidewall surface of the fin, and forming a gate electrode layer over the oxide layer.
    Type: Application
    Filed: July 30, 2018
    Publication date: January 30, 2020
    Applicant: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.
    Inventors: Tsung-Han WU, Tong-Min WENG, Chun-Yi HUANG, Po-Ching LEE, Chih-Hsuan HSIEH, Shu-Ching TSAI
  • Multiple Nozzle Slurry Dispense Scheme
    Publication number: 20190321941
    Abstract: An apparatus includes a slurry dispensing arm, multiple nozzles formed on the slurry dispensing arm, and a slurry supply module connected to the slurry dispensing arm. The slurry supply module is configured to provide slurry to the multiple nozzles and the multiple nozzles are configured to dispense the slurry.
    Type: Application
    Filed: July 1, 2019
    Publication date: October 24, 2019
    Inventors: Chih-Hsuan Hsieh, Tseng-Hsuan Huang, Chen-Hsiang Liao
  • Multiple nozzle slurry dispense scheme
    Patent number: 10335920
    Abstract: An apparatus includes a slurry dispensing arm, multiple nozzles formed on the slurry dispensing arm, and a slurry supply module connected to the slurry dispensing arm. The slurry supply module is configured to provide slurry to the multiple nozzles and the multiple nozzles are configured to dispense the slurry.
    Type: Grant
    Filed: February 12, 2014
    Date of Patent: July 2, 2019
    Assignee: Taiwan Semiconductor Manufacturing Company
    Inventors: Chih-Hsuan Hsieh, Tseng-Hsuan Huang, Chen-Hsiang Liao
  • Multiple Nozzle Slurry Dispense Scheme
    Publication number: 20150224626
    Abstract: An apparatus includes a slurry dispensing arm, multiple nozzles formed on the slurry dispensing arm, and a slurry supply module connected to the slurry dispensing arm. The slurry supply module is configured to provide slurry to the multiple nozzles and the multiple nozzles are configured to dispense the slurry.
    Type: Application
    Filed: February 12, 2014
    Publication date: August 13, 2015
    Inventors: Chih-Hsuan Hsieh, Tseng-Hsuan Huang, Chen-Hsiang Liao