Patents by Inventor Chih-Hsuan Hsieh

Chih-Hsuan Hsieh has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Publication number: 20200372493
    Abstract: A method of item management, comprises establishing a blockchain network comprising at least a wallet, which is corresponding to at least a container; issuing a first token corresponding to a plurality of items to a first wallet of the at least a wallet in the blockchain network when the plurality of items is added to a first container of the at least a container; and modifying a status of the first token according to a status of the plurality of items in the first container.
    Type: Application
    Filed: May 20, 2020
    Publication date: November 26, 2020
    Inventors: Chun-Kai Wang, Chung-Han Hsieh, Hsiu-An Teng, Chih-Yang Liu, Chun-Jen Chen, Jun-De Liao, Pei-Hsuan Weng, Zih-Hao Lin
  • Publication number: 20200347491
    Abstract: A sputtering target structure includes a body having a first side and an opposing second side. A first sputtering target is coupled to the first side of the body. The first sputtering target includes a first material. A second sputtering target is coupled to the second side of the body. The second sputtering target includes a second material. A rotation mechanism is coupled to the body and is configured to allow rotation of the body from a first orientation to a second orientation.
    Type: Application
    Filed: July 17, 2020
    Publication date: November 5, 2020
    Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.
    Inventors: Ping-Yuan CHEN, Hung-Cheng CHEN, Chih-Hsua HSIEH, Yu-Hsuan WANG
  • Patent number: 10803115
    Abstract: An approach is provided to provide URLs based on a digital subject matter image (DSMI) received from a requestor. The approach identifies a set of classification labels pertaining to the DSMI and matches the set of classification labels against multiple sets of predefined labels with each of the sets of predefined labels corresponding to a URL. The matching results in a selected URL pertaining to the DSMI with this URL being returned to the requestor. In one embodiment, the approach is performed by a domain name system (DNS).
    Type: Grant
    Filed: July 30, 2018
    Date of Patent: October 13, 2020
    Assignee: International Business Machines Corporation
    Inventors: Chih-Hsiung Liu, Cheng-Fang Lin, I-Chien Lin, Chiwen Chang, Ci-Wei Lan, Tsai-Hsuan Hsieh, Kate Lin, Peter Wu, Kuo-Liang Chou
  • Publication number: 20200313051
    Abstract: The disclosure discloses an optoelectronic element comprising: an optoelectronic unit comprising a first metal layer, a second metal layer, and an outermost lateral surface; an insulating layer having a first portion overlapping the optoelectronic unit and extending beyond the lateral surface, and a second portion separated from the first portion in a cross-sectional view; and a first conductive layer formed on the insulating layer.
    Type: Application
    Filed: June 12, 2020
    Publication date: October 1, 2020
    Inventors: Cheng-Nan HAN, Tsung-Xian LEE, Min-Hsun HSIEH, Hung-Hsuan CHEN, Hsin-Mao LIU, Hsing-Chao CHEN, Ching-San TAO, Chih-Peng NI, Tzer- Perng CHEN, Jen-Chau WU
  • Publication number: 20200294944
    Abstract: A package structure includes a semiconductor device, a molding compound, a first dielectric layer, and a through-via. The molding compound is in contact with a sidewall of the semiconductor device. The first dielectric layer is over the molding compound and the semiconductor device. The through-via is in the molding compound and the first dielectric layer. The through-via is a continuous element and in contact with the first dielectric layer.
    Type: Application
    Filed: May 31, 2020
    Publication date: September 17, 2020
    Applicant: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.
    Inventors: Chih-Hsuan TAI, Ting-Ting KUO, Yu-Chih HUANG, Chih-Wei LIN, Hsiu-Jen LIN, Chih-Hua CHEN, Ming-Da CHENG, Ching-Hua HSIEH, Hao-Yi TSAI, Chung-Shi LIU
  • Patent number: 10763116
    Abstract: A semiconductor device includes: a fin structure disposed on a substrate; a gate feature that traverses the fin structure to overlay a central portion of the fin structure; a pair of source/drain features, along the fin structure, that are disposed at respective sides of the gate feature; and a plurality of contact structures that are formed of tungsten, wherein a gate electrode of the gate feature and the pair of source/drain features are each directly coupled to a respective one of the plurality of contact structures.
    Type: Grant
    Filed: October 30, 2017
    Date of Patent: September 1, 2020
    Assignee: Taiwan Semiconductor Manufacturing Co., Ltd.
    Inventors: Hong-Ying Lin, Cheng-Yi Wu, Alan Tu, Chung-Liang Cheng, Li-Hsuan Chu, Ethan Hsiao, Hui-Lin Sung, Sz-Yuan Hung, Sheng-Yung Lo, C. W. Chiu, Chih-Wei Hsieh, Chin-Szu Lee
  • Patent number: 10718048
    Abstract: A sputtering target structure includes a body having a first side and an opposing second side. A first sputtering target is coupled to the first side of the body. The first sputtering target includes a first material. A second sputtering target is coupled to the second side of the body. The second sputtering target includes a second material. A rotation mechanism is coupled to the body and is configured to allow rotation of the body from a first orientation to a second orientation.
    Type: Grant
    Filed: January 29, 2018
    Date of Patent: July 21, 2020
    Assignee: Taiwan Semiconductor Manufacturing Co., Ltd.
    Inventors: Ping-Yuan Chen, Hung-Cheng Chen, Chih-Hsua Hsieh, Yu-Hsuan Wang
  • Patent number: 10686106
    Abstract: The disclosure discloses an optoelectronic element comprising: an optoelectronic unit comprising a first metal layer, a second metal layer, and an outermost lateral surface; an insulating layer having a first portion overlapping the optoelectronic unit and extending beyond the lateral surface, and a second portion separated from the first portion in a cross-sectional view; and a first conductive layer formed on the insulating layer.
    Type: Grant
    Filed: May 7, 2018
    Date of Patent: June 16, 2020
    Assignee: EPISTAR CORPORATION
    Inventors: Cheng-Nan Han, Tsung-Xian Lee, Min-Hsun Hsieh, Hung-Hsuan Chen, Hsin-Mao Liu, Hsing-Chao Chen, Ching-San Tao, Chih-Peng Ni, Tzer-Perng Chen, Jen-Chau Wu
  • Patent number: 10672729
    Abstract: A method of forming a package structure includes disposing a semiconductor device over a first dielectric layer, wherein a first redistribution line is in the first dielectric layer, forming a molding compound over the first dielectric layer and in contact with a sidewall of the semiconductor device, forming a second dielectric layer over the molding compound and the semiconductor device, forming a first opening in the second dielectric layer, the molding compound, and the first dielectric layer to expose the first redistribution line, and forming a first conductor in the first opening, wherein the first conductor is electrically connected to the first redistribution line.
    Type: Grant
    Filed: October 5, 2017
    Date of Patent: June 2, 2020
    Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.
    Inventors: Chih-Hsuan Tai, Ting-Ting Kuo, Yu-Chih Huang, Chih-Wei Lin, Hsiu-Jen Lin, Chih-Hua Chen, Ming-Da Cheng, Ching-Hua Hsieh, Hao-Yi Tsai, Chung-Shi Liu
  • Patent number: 10651296
    Abstract: Methods of fabricating FinFET devices are provided. The method includes forming a fin over a substrate. The method also includes implanting a first dopant on a top surface of the fin and implanting a second dopant on a sidewall surface of the fin. The first dopant is different from the second dopant. The method further includes forming an oxide layer on the top surface and the sidewall surface of the fin, and forming a gate electrode layer over the oxide layer.
    Type: Grant
    Filed: July 30, 2018
    Date of Patent: May 12, 2020
    Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.
    Inventors: Tsung-Han Wu, Tong-Min Weng, Chun-Yi Huang, Po-Ching Lee, Chih-Hsuan Hsieh, Shu-Ching Tsai
  • Publication number: 20200065680
    Abstract: Enhancing a data query is provided. A knowledge base is searched for information corresponding to the data query. It is determined whether a query result is greater than a query result threshold level of information for the data query based on an identified query intent and keywords of the data query. In response to determining that the query result is not greater than the query result threshold level of information for the data query, a set of questions is sent to a personal digital agent of a client device that sent the data query for additional information based on the identified query intent and keywords. Analytic concepts answering the set of questions are received from analytic modules of the personal digital agent that are based on IoT-based personal data corresponding to a user of the client device. The data query is enhanced using the analytic concepts.
    Type: Application
    Filed: August 27, 2018
    Publication date: February 27, 2020
    Inventors: Ching-Wei Cheng, Yu-chun Lin, Hsin-Yu Hsieh, Chih-Hsiung Liu, Tsai-Hsuan Hsieh
  • Publication number: 20200043739
    Abstract: A semiconductor device includes: a fin structure disposed on a substrate; a gate feature that traverses the fin structure to overlay a central portion of the fin structure; a pair of source/drain features, along the fin structure, that are disposed at respective sides of the gate feature; and a plurality of contact structures that are formed of tungsten, wherein a gate electrode of the gate feature and the pair of source/drain features are each directly coupled to a respective one of the plurality of contact structures.
    Type: Application
    Filed: October 8, 2019
    Publication date: February 6, 2020
    Inventors: Hong-Ying LIN, Cheng-Yi WU, Alan TU, Chung-Liang CHENG, Li-Hsuan CHU, Ethan HSIAO, Hui-Lin SUNG, Sz-Yuan HUNG, Sheng-Yung LO, C.W. CHIU, Chih-Wei Hsieh, Chin-Szu LEE
  • Publication number: 20200035815
    Abstract: Methods of fabricating FinFET devices are provided. The method includes forming a fin over a substrate. The method also includes implanting a first dopant on a top surface of the fin and implanting a second dopant on a sidewall surface of the fin. The first dopant is different from the second dopant. The method further includes forming an oxide layer on the top surface and the sidewall surface of the fin, and forming a gate electrode layer over the oxide layer.
    Type: Application
    Filed: July 30, 2018
    Publication date: January 30, 2020
    Applicant: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.
    Inventors: Tsung-Han WU, Tong-Min WENG, Chun-Yi HUANG, Po-Ching LEE, Chih-Hsuan HSIEH, Shu-Ching TSAI
  • Publication number: 20200034439
    Abstract: An approach is provided to provide URLs based on a digital subject matter image (DSMI) received from a requestor. The approach identifies a set of classification labels pertaining to the DSMI and matches the set of classification labels against multiple sets of predefined labels with each of the sets of predefined labels corresponding to a URL. The matching results in a selected URL pertaining to the DSMI with this URL being returned to the requestor. In one embodiment, the approach is performed by a domain name system (DNS).
    Type: Application
    Filed: July 30, 2018
    Publication date: January 30, 2020
    Inventors: Chih-Hsiung Liu, Cheng-Fang Lin, I-Chien Lin, Chiwen Chang, Ci-Wei Lan, Tsai-Hsuan Hsieh, Kate Lin, Peter Wu, Kuo-Liang Chou
  • Patent number: 10529898
    Abstract: An optoelectronic element includes an optoelectronic unit, a first metal layer, a second metal layer, a conductive layer and a transparent structure. The optoelectronic unit has a central line in a top view, a top surface, and a bottom surface. The second metal layer is formed on the top surface, and has an extension portion crossing over the central line and extending to the first metal layer. The conductive layer covers the first metal layer and the extension portion. The transparent structure covers the bottom surface without covering the top surface.
    Type: Grant
    Filed: August 16, 2017
    Date of Patent: January 7, 2020
    Assignee: EPISTAR CORPORATION
    Inventors: Cheng-Nan Han, Tsung-Xian Lee, Min-Hsun Hsieh, Hung-Hsuan Chen, Hsin-Mao Liu, Hsing-Chao Chen, Ching San Tao, Chih-Peng Ni, Tzer-Perng Chen, Jen-Chau Wu, Masafumi Sano, Chih-Ming Wang
  • Publication number: 20190377253
    Abstract: A writable projection screen includes a substrate, a reflective layer and a writing layer. The reflective layer is disposed on the substrate, and the writing layer has a light receiving surface. The light receiving surface is adapted to receive a projection light beam. A roughness of the light receiving surface is between 5 ?m and 30 ?m. The substrate is disposed between the reflective layer and the writing layer, or the reflective layer is disposed between the substrate and the writing layer. The writable projection screen has good quality for displaying an image and can be used for being written by a variety of pens.
    Type: Application
    Filed: April 10, 2019
    Publication date: December 12, 2019
    Inventors: FANG-HSUAN SU, CHIA-HUA CHEN, FU-CHIANG HSU, CHIH-NENG TSENG, CHI-TANG HSIEH
  • Publication number: 20190321941
    Abstract: An apparatus includes a slurry dispensing arm, multiple nozzles formed on the slurry dispensing arm, and a slurry supply module connected to the slurry dispensing arm. The slurry supply module is configured to provide slurry to the multiple nozzles and the multiple nozzles are configured to dispense the slurry.
    Type: Application
    Filed: July 1, 2019
    Publication date: October 24, 2019
    Inventors: Chih-Hsuan Hsieh, Tseng-Hsuan Huang, Chen-Hsiang Liao
  • Patent number: 10381094
    Abstract: A two-sided, staged programming operation is applied to a memory having first and second stacks of memory cells C1(i) and C2(i), i being the physical level of a cell. The staged programming operation includes applying a preliminary program stage S1, an intermediate program stage S2, and a final program stage S3 to memory cells in the first and second stacks. In a programming order the final program stage S3 is applied to memory cells in the first and second stacks at each level (i) for which the intermediate program stage S2 has already been applied to the memory cells in any neighboring levels (levels i+1 and i?1). The intermediate program stage S2 is applied only to memory cells for which the preliminary program stage S1 has already been applied to the cells in any neighboring levels (levels i+1 and i?1).
    Type: Grant
    Filed: October 11, 2016
    Date of Patent: August 13, 2019
    Assignee: MACRONIX INTERNATIONAL CO., LTD.
    Inventors: Chen-Jun Wu, Chih-Chang Hsieh, Tzu-Hsuan Hsu, Hang-Ting Lue
  • Patent number: 10335920
    Abstract: An apparatus includes a slurry dispensing arm, multiple nozzles formed on the slurry dispensing arm, and a slurry supply module connected to the slurry dispensing arm. The slurry supply module is configured to provide slurry to the multiple nozzles and the multiple nozzles are configured to dispense the slurry.
    Type: Grant
    Filed: February 12, 2014
    Date of Patent: July 2, 2019
    Assignee: Taiwan Semiconductor Manufacturing Company
    Inventors: Chih-Hsuan Hsieh, Tseng-Hsuan Huang, Chen-Hsiang Liao
  • Publication number: 20150224626
    Abstract: An apparatus includes a slurry dispensing arm, multiple nozzles formed on the slurry dispensing arm, and a slurry supply module connected to the slurry dispensing arm. The slurry supply module is configured to provide slurry to the multiple nozzles and the multiple nozzles are configured to dispense the slurry.
    Type: Application
    Filed: February 12, 2014
    Publication date: August 13, 2015
    Inventors: Chih-Hsuan Hsieh, Tseng-Hsuan Huang, Chen-Hsiang Liao